公开(公告)号：US5665607A

公开(公告)日：1997-09-09

申请号：US258745

申请日：1994-06-10

申请人： Yoshitatsu Kawama ,  Mikio Deguchi ,  Shigeru Mitsui ,  Hideo Naomoto ,  Satoshi Arimoto ,  Satoshi Hamamoto ,  Hiroaki Morikawa ,  Hisao Kumabe

发明人： Yoshitatsu Kawama ,  Mikio Deguchi ,  Shigeru Mitsui ,  Hideo Naomoto ,  Satoshi Arimoto ,  Satoshi Hamamoto ,  Hiroaki Morikawa ,  Hisao Kumabe

IPC分类号： H01L21/205 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/04 ,  H01L31/18 ,  H01L31/0368

CPC分类号： H01L31/1892 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/977

摘要： In a method for fabricating a thin film solar cell, a thin semiconductor film serving as a power generating layer is formed on a substrate via an intermediate layer, a plurality of holes are formed penetrating through the thin semiconductor film and reaching the intermediate layer, and the intermediate layer is etched away through the through-holes, separating the thin semiconductor film from the substrate with high-efficiency. Since stress is hardly applied to the thin semiconductor film during the separation process, cracking and breaking of the semiconductor film is avoided. Further, since the surface of the substrate is maintained in good condition, the substrate can be reused, resulting in a reduction in the production cost.

摘要翻译： 在制造薄膜太阳能电池的方法中，通过中间层在基板上形成用作发电层的薄半导体膜，穿过薄半导体膜形成多个孔并到达中间层，并且 通过通孔蚀刻中间层，从而高效地将薄的半导体膜与基板分离。 由于在分离工序中难以对薄的半导体膜施加应力，因此避免了半导体膜的破裂和断裂。 此外，由于基板的表面保持良好状态，因此可以重新使用基板，导致生产成本的降低。

公开(公告)号：US5467731A

公开(公告)日：1995-11-21

申请号：US322375

申请日：1994-10-13

申请人： Satoshi Arimoto ,  Norio Hayafuji ,  Mikio Deguchi ,  Satoshi Hamamoto

发明人： Satoshi Arimoto ,  Norio Hayafuji ,  Mikio Deguchi ,  Satoshi Hamamoto

IPC分类号： H01L21/208 ,  H01L21/20 ,  C30B13/20

CPC分类号： H01L21/2022

摘要： A method for producing a semiconductor structure including a semiconductor film formed on a semiconductor substrate body via an insulating film includes: laminating a first insulating film, a first semiconductor film, and a second insulating film on the semiconductor substrate successively; forming stripe-shaped second semiconductor films of predetermined width on the second insulating film arranged periodically at a predetermined interval and covering these second semiconductor films with a third insulating film; performing zone melting recrystallization of the first semiconductor film from one end of the substrate to the opposite end along the stripe direction of the stripe-shaped second semiconductor film; etching the third insulating film and portions of the second insulating film not sandwiched by the first and second semiconductor films; oxidizing portions of the second semiconductor film and the first semiconductor film exposed in the etching step and etching and removing the second insulating film remaining after the previous etching. Thus, a semiconductor substrate including a recrystallized semiconductor film having removed sub-grain-boundaries generated during the zone melting recrystallization, is obtained by fewer process steps than in the prior art.

摘要翻译： 一种用于制造半导体结构的方法，该半导体结构包括通过绝缘膜形成在半导体衬底本体上的半导体膜，包括：依次在半导体衬底上层叠第一绝缘膜，第一半导体膜和第二绝缘膜; 在预定间隔周期性地布置的第二绝缘膜上形成预定宽度的条状第二半导体膜，并用第三绝缘膜覆盖这些第二半导体膜; 从所述基板的一端到所述条状的第二半导体膜的条带方向的相反端进行区域熔融再结晶的第一半导体膜; 蚀刻第三绝缘膜和未被第一和第二半导体膜夹持的第二绝缘膜的部分; 在蚀刻步骤中暴露的第二半导体膜和第一半导体膜的氧化部分，并蚀刻除去在先前蚀刻之后残留的第二绝缘膜。 因此，通过比现有技术更少的工艺步骤获得包括在区域熔融再结晶期间产生的去除亚晶界的再结晶半导体膜的半导体衬底。

公开(公告)号：US5397713A

公开(公告)日：1995-03-14

申请号：US993021

申请日：1992-12-18

申请人： Satoshi Hamamoto ,  Mikio DeGuchi

发明人： Satoshi Hamamoto ,  Mikio DeGuchi

IPC分类号： H01L21/02 ,  H01L31/04 ,  H01L31/048 ,  H01L31/18

CPC分类号： H01L31/048 ,  H01L31/0445 ,  H01L31/1804 ,  H01L31/1872 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S148/135

摘要： In a method of producing a thin-film solar cell, a graphite sheet in which the breaking stress in a thickness direction is smaller than the breaking stress in a direction perpendicular to the thickness direction is adhered to a heat resistant substrate, a semiconductor thin film is formed on the graphite sheet in a high temperature process, a second substrate for supporting the semiconductor thin film is adhered to the semiconductor thin film, and the graphite sheet is broken by applying a mechanical stress to the heat resistant substrate and the second substrate. The semiconductor thin film is reliably supported by the heat resistant substrate during high temperature processing and easily removed from the heat resistant substrate by breaking the graphite sheet. In addition, since the graphite sheet has an anisotropic breaking stress, fragments of the graphite sheet remaining on the surface of the semiconductor thin film are easily removed. As a result, a high quality thin film solar cell is produced reliably at low cost.

摘要翻译： 在制造薄膜太阳能电池的方法中，在厚度方向上的断裂应力小于在与厚度方向垂直的方向上的断裂应力的石墨片粘附到耐热基板上，半导体薄膜 在高温工艺中形成在石墨片上，用于支撑半导体薄膜的第二基板粘附到半导体薄膜上，并且通过对耐热基板和第二基板施加机械应力来破坏石墨片。 半导体薄膜在耐高温处理时被耐热基板可靠地支撑，并且通过破坏石墨片而容易地从耐热基板上去除。 此外，由于石墨片具有各向异性的断裂应力，因此易于除去残留在半导体薄膜的表面上的石墨片的碎片。 结果，以低成本可靠地生产高品质的薄膜太阳能电池。

公开(公告)号：US06408622B1

公开(公告)日：2002-06-25

申请号：US09622957

申请日：2000-08-24

申请人： Yasutaka Tsuruga ,  Takashi Kanai ,  Junya Kawamoto ,  Satoshi Hamamoto ,  Yasuharu Okazaki ,  Yukiaki Nagao

发明人： Yasutaka Tsuruga ,  Takashi Kanai ,  Junya Kawamoto ,  Satoshi Hamamoto ,  Yasuharu Okazaki ,  Yukiaki Nagao

IPC分类号： F15B1306

CPC分类号： E02F9/2225 ,  E02F9/2207 ,  E02F9/2285 ,  E02F9/2296 ,  F15B11/0406 ,  F15B11/162 ,  F15B11/165 ,  F15B2211/20553 ,  F15B2211/20584 ,  F15B2211/255 ,  F15B2211/30505 ,  F15B2211/30535 ,  F15B2211/3111 ,  F15B2211/3144 ,  F15B2211/31576 ,  F15B2211/50527 ,  F15B2211/5153 ,  F15B2211/6054 ,  F15B2211/63 ,  F15B2211/6313 ,  F15B2211/6316 ,  F15B2211/7135

摘要： A hydraulic drive system having a swing control system, includes a pump control unit for controlling a pump delivery rate such that a pump delivery pressure is held a predetermined value higher than a maximum load pressure among a plurality of actuators. Pressure compensating valves are each constructed to set, as a target compensation differential pressure, a differential pressure between a delivery pressure of a hydraulic pump and a maximum load pressure among the actuators. A pressure compensating valve for a swing section is given such a load dependent characteristic that when the load pressure rises, the target compensation differential pressure is reduced, the load dependent characteristic being set so as to provide a flow rate characteristic simulating constant-horsepower control of a swing motor.

摘要翻译： 具有摆动控制系统的液压驱动系统包括：泵控制单元，用于控制泵输送速率，使得泵输送压力保持在多个致动器中比最大负载压力高的预定值。 压力补偿阀各自被构造成将作为目标补偿压差的液压泵的输送压力和致动器中的最大负载压力之间的压力设定为压力补偿阀。 用于摆动部分的压力补偿阀具有这样的负载依赖特性：当负载压力升高时，目标补偿压差降低，负载相关特性被设定为提供模拟恒功率控制的流量特性 摆动马达

公开(公告)号：US09252305B2

公开(公告)日：2016-02-02

申请号：US13979272

申请日：2012-03-02

申请人： Satoshi Hamamoto

发明人： Satoshi Hamamoto

IPC分类号： H01L31/0224 ,  H01L31/0352 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/03529 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A photovoltaic device includes a silicon substrate of a first conduction type that includes an impurity diffusion layer on one surface side; a light-receiving-surface side electrode that includes a plurality of grid electrodes electrically connected to the impurity diffusion layer; and a back-surface side electrode formed on the other surface side of the silicon substrate wherein the impurity diffusion layer includes a first impurity diffusion layer and a second impurity diffusion layer, and wherein the first impurity diffusion layer is formed so that a direction perpendicular to a longitudinal direction of the grid electrodes is a longitudinal direction thereof, and so that an area ratio of the first impurity diffusion layer to a band region is equal to or lower than 50%.

摘要翻译： 光电器件包括在一个表面侧包括杂质扩散层的第一导电类型的硅衬底; 光接收面侧电极，其包括电连接到所述杂质扩散层的多个栅电极; 以及形成在所述硅基板的另一个表面侧的背面侧电极，其中所述杂质扩散层包括第一杂质扩散层和第二杂质扩散层，并且其中所述第一杂质扩散层形成为使得垂直于 栅电极的长度方向为长度方向，第一杂质扩散层与带区的面积比为50％以下。

公开(公告)号：US06082106A

公开(公告)日：2000-07-04

申请号：US174842

申请日：1998-10-19

申请人： Satoshi Hamamoto

发明人： Satoshi Hamamoto

IPC分类号： E02F9/22 ,  F15B11/16 ,  F15B11/05

CPC分类号： E02F9/2267 ,  E02F9/2225 ,  E02F9/2271 ,  E02F9/2296 ,  F15B11/165 ,  F15B2211/20553 ,  F15B2211/251 ,  F15B2211/30505 ,  F15B2211/30535 ,  F15B2211/3055 ,  F15B2211/30555 ,  F15B2211/3111 ,  F15B2211/3144 ,  F15B2211/31529 ,  F15B2211/324 ,  F15B2211/50536 ,  F15B2211/513 ,  F15B2211/5158 ,  F15B2211/528 ,  F15B2211/55 ,  F15B2211/57 ,  F15B2211/6054 ,  F15B2211/7135 ,  F15B2211/88

摘要： A hydraulic device comprises a variable displacement pump, a plurality of hydraulic actuators, a plurality of directional valves capable of controlling the delivery oil flowing into each of the actuators, a plurality of pressure compensation valves which compensate the pressures of respective directional valves, and a delivery oil flow rate varying means capable of controlling the pump delivery. At least one of the pressure compensation valves decreases its output flow to a particular actuator according to an increase in the loaded pressure of the particular actuator. With this arrangement, if the loaded pressure of the particular actuator suddenly changes, the loaded pressure attenuates to ensure stable operation of the hydraulic device. Further, the stable operation is fee of hunting for both low-load actuators and high load actuators, regardless of an independent operation or a compound operation.

摘要翻译： 液压装置包括可变排量泵，多个液压致动器，能够控制流入每个致动器的输送油的多个方向阀，补偿各个换向阀的压力的多个压力补偿阀，以及 输送油流量变化装置，其能够控制泵输送。 根据特定致动器的负载压力的增加，至少一个压力补偿阀将其输出流量减小到特定的致动器。 通过这种布置，如果特定致动器的负载压力突然变化，则负载压力衰减以确保液压装置的稳定运行。 此外，无论独立操作还是复合操作，稳定操作都是低负载致动器和高负载致动器的打猎费。

公开(公告)号：US20140302629A1

公开(公告)日：2014-10-09

申请号：US14364855

申请日：2012-02-01

申请人： Satoshi Hamamoto

发明人： Satoshi Hamamoto

IPC分类号： H01L31/18 ,  H01L21/306 ,  H01L21/67 ,  H01L21/225

CPC分类号： H01L31/18 ,  H01L21/223 ,  H01L21/225 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/67063 ,  H01L21/6708 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A manufacturing method includes a step of forming an impurity diffusion layer by diffusing an impurity element in a surface of a silicon-based substrate; and an etching step of removing the impurity diffusion layer in at least a portion of a first-surface side of the silicon-based substrate, wherein the etching step includes an etching-fluid supplying step of, on the first-surface side, supplying an etching fluid that flows to an outer edge portion of the silicon-based substrate from a supply position, and an air supplying step of, on a second-surface side, which is opposite to the first-surface side, of the silicon-based substrate, supplying air in a same direction as the etching fluid in accordance with supply of the etching fluid at the etching-fluid supplying step.

摘要翻译： 一种制造方法包括通过在硅基基板的表面中扩散杂质元素来形成杂质扩散层的步骤; 以及蚀刻步骤，在所述硅基基板的第一表面侧的至少一部分中除去所述杂质扩散层，其中所述蚀刻步骤包括蚀刻液供给步骤，所述蚀刻流体供给步骤在所述第一表面侧供给 从供给位置流入硅基基板的外缘部的蚀刻流体，以及与第一表面侧相反的硅基基板的第二表面侧的空气供给工序 根据蚀刻流体供给步骤中的蚀刻流体的供给，沿与蚀刻流体相同的方向供给空气。

公开(公告)号：US06810912B2

公开(公告)日：2004-11-02

申请号：US10446114

申请日：2003-05-28

申请人： Yuuji Ogura ,  Satoshi Hamamoto ,  Zenzou Hamada ,  Satoshi Okude

发明人： Yuuji Ogura ,  Satoshi Hamamoto ,  Zenzou Hamada ,  Satoshi Okude

IPC分类号： F15B1304

CPC分类号： F15B13/0402 ,  F16K27/041 ,  F16K27/048 ,  Y10T137/8671

摘要： A spool valve comprises a slidable spool, and through displacement of the spool a supply port of the valve is allowed to communicate with one of the load ports of the valve while the other load port is allowed to communicate with a corresponding one of return ports of the valve. The spool is provided with a portion, the outside diameter of which gradually increases, at least on the other load port side from the center of a central concave portion of the spool. The outside diameter gradually increasing portion decreases fluid force which acts against an operating force of the spool when the valve is activated.

摘要翻译： 滑阀包括可滑动的阀芯，并且通过阀芯的移动，允许阀的供应端口与阀的一个负载端口连通，而允许另一个负载端口与相应的一个返回端口 阀门。 阀芯设置有至少在从卷轴的中心凹部的中心的另一个装载口侧的外径逐渐增加的部分。 外径逐渐增加的部分减小了当阀被启动时抵抗阀芯的操作力的流体力。

公开(公告)号：US5801427A

公开(公告)日：1998-09-01

申请号：US873027

申请日：1997-06-11

申请人： Shigeru Shiratake ,  Kaoru Motonami ,  Satoshi Hamamoto

发明人： Shigeru Shiratake ,  Kaoru Motonami ,  Satoshi Hamamoto

IPC分类号： H01L21/027 ,  H01L21/28 ,  H01L21/336 ,  H01L21/768 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L29/42376 ,  H01L21/0276 ,  H01L21/28123 ,  H01L21/76889 ,  H01L29/4933 ,  H01L29/6659 ,  H01L29/7833

摘要： In a semiconductor device having a polycide structure located on a stepped portion, halation during formation of a resist pattern is prevented, and oxidation of an upper surface of a high-melting-point metal silicide layer is prevented during formation of an interlayer insulating film on the polycide structure. In this semiconductor device, an upper layer which is formed of one layer selected from the group consisting of an amorphous silicon layer, a polycrystalline silicon layer, a TiN layer and a TiW layer is formed on the high-melting-point metal silicide layer forming the polycide structure. This effectively suppresses reflection of light beams by the upper layer located at the stepped portion during exposure for forming the resist pattern on the upper layer. Thereby, formation of a notch at the resist pattern is prevented, and the resist pattern is accurately formed to have a designed pattern. The upper layer made of the amorphous silicon layer or polycrystalline silicon layer prevents formation of an oxide layer at an upper surface of the high-melting-point metal silicide layer due to oxydation by Oxygen carried to the inside of the CVD furnace from the outside during formation of an interlayer insulating film covering the polycide structure.

摘要翻译： 在具有位于阶梯部分上的多晶硅结构的半导体器件中，防止形成抗蚀剂图案期间的卤化，并且在层间绝缘膜形成期间防止高熔点金属硅化物层的上表面的氧化 多晶硅结构。 在该半导体器件中，在高熔点金属硅化物层形成中形成由选自非晶硅层，多晶硅层，TiN层和TiW层的一层形成的上层 多晶硅结构。 这在上层形成抗蚀剂图案的曝光期间有效地抑制位于台阶部分的上层的光束的反射。 由此，防止在抗蚀剂图案处形成切口，并且将抗蚀剂图形精确地形成为具有设计图案。 由非晶硅层或多晶硅层制成的上层防止在高熔点金属硅化物层的上表面形成氧化物层，这是由于氧化从CVD外部向内部送入CVD炉内 形成覆盖多晶硅化物结构的层间绝缘膜。

公开(公告)号：US09246043B2

公开(公告)日：2016-01-26

申请号：US14364855

申请日：2012-02-01

申请人： Satoshi Hamamoto

发明人： Satoshi Hamamoto

IPC分类号： H01L21/306 ,  H01L31/18 ,  H01L21/223 ,  H01L31/068 ,  H01L21/225 ,  H01L21/67

CPC分类号： H01L31/18 ,  H01L21/223 ,  H01L21/225 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/67063 ,  H01L21/6708 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A manufacturing method includes a step of forming an impurity diffusion layer by diffusing an impurity element in a surface of a silicon-based substrate; and an etching step of removing the impurity diffusion layer in at least a portion of a first-surface side of the silicon-based substrate, wherein the etching step includes an etching-fluid supplying step of, on the first-surface side, supplying an etching fluid that flows to an outer edge portion of the silicon-based substrate from a supply position, and an air supplying step of, on a second-surface side, which is opposite to the first-surface side, of the silicon-based substrate, supplying air in a same direction as the etching fluid in accordance with supply of the etching fluid at the etching-fluid supplying step.

摘要翻译： 一种制造方法包括通过在硅基基板的表面中扩散杂质元素来形成杂质扩散层的步骤; 以及蚀刻步骤，在所述硅基基板的第一表面侧的至少一部分中除去所述杂质扩散层，其中所述蚀刻步骤包括蚀刻流体供给步骤，所述蚀刻流体供应步骤在所述第一表面侧上， 从供给位置流入硅基基板的外缘部的蚀刻流体，以及与第一表面侧相反的硅基基板的第二表面侧的空气供给工序 根据蚀刻流体供给步骤中的蚀刻流体的供给，沿与蚀刻流体相同的方向供给空气。