利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

25 条记录 (耗时 0.033 秒)

    Polishing method, polishing apparatus, and method of manufacturing semiconductor device
    1.
    发明授权
    Polishing method, polishing apparatus, and method of manufacturing semiconductor device 失效
    抛光方法，抛光装置和制造半导体器件的方法

    公开(公告)号：US07141501B2

    公开(公告)日：2006-11-28

    申请号：US10512745

    申请日：2003-04-14

    申请人： Hiroshi Horikoshi ,  Takeshi Nogami ,  Shuzo Sato ,  Shingo Takahashi ,  Naoki Komai ,  Kaori Tai ,  Hiizu Ohtorii

    发明人： Hiroshi Horikoshi ,  Takeshi Nogami ,  Shuzo Sato ,  Shingo Takahashi ,  Naoki Komai ,  Kaori Tai ,  Hiizu Ohtorii

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： B24B53/017 ,  B24B53/001 ,  C25F3/16

    摘要： A polishing method and a polishing apparatus by which excess portions of a metallic film 18 can be removed easily and efficiently in planarizing the metallic film 18 by polishing and which is high in accuracy of polishing, are provided. Also, a method of manufacturing a semiconductor device by use of the polishing method and the polishing apparatus is provided. A substrate 17 provided with the metallic film 18 and a counter electrode 15 are disposed oppositely to each other in an electrolytic solution E, an electric current is passed to the metallic film 18 through the electrolytic solution E, and the surface of the metallic film 18 is polished with a hard pad 14.

    摘要翻译： 提供了抛光方法和抛光装置，其通过抛光对金属膜18进行平面化并且抛光精度高而容易且有效地除去金属膜18的多余部分。 此外，提供了通过使用抛光方法和抛光装置制造半导体器件的方法。 设置有金属膜18的基板17和对置电极15在电解液E中相对配置，电流通过电解液E通过金属膜18，金属膜18的表面 用硬垫抛光14。

    Electropolishing liquid, electropolishing method, and method for fabricating semiconductor device
    2.
    发明申请
    Electropolishing liquid, electropolishing method, and method for fabricating semiconductor device 审中-公开
    电抛光液，电解抛光方法及制造半导体器件的方法

    公开(公告)号：US20070051638A1

    公开(公告)日：2007-03-08

    申请号：US11591688

    申请日：2006-11-01

    申请人： Shuzo Sato ,  Takeshi Nogami ,  Shingo Takahashi ,  Naoki Komai ,  Kaori Tai ,  Hiroshi Horikoshi ,  Hiizu Ohtorii

    发明人： Shuzo Sato ,  Takeshi Nogami ,  Shingo Takahashi ,  Naoki Komai ,  Kaori Tai ,  Hiroshi Horikoshi ,  Hiizu Ohtorii

    IPC分类号： B23H5/00

    CPC分类号： C09G1/02 ,  C25F3/02 ,  C25F3/16 ,  H01L21/32125

    摘要： Electric conductivity is enhanced without causing coagulation or precipitation of polishing abrasive grains. In addition, good planarization is realized without inducing defects in a metallic film or a wiring which are to be polished. In an electropolishing method for planarizing the surface of a metallic film to be polished by moving a polishing pad (15) in sliding contact with the metallic film surface while oxidizing the metallic film surface through an electrolytic action in an electropolishing liquid E, the electropolishing liquid E contains at least polishing abrasive grains and an electrolyte for maintaining an electrostatically charged state of the polishing abrasive grains. Since the electropolishing liquid having a high electric conductivity is used, it is possible to obtain a high electrolyzing current and to enlarge the distance between electrodes. Besides, in the electropolishing method, the electropolishing liquid with a good dispersion state of the polishing abrasive grains is used, so that remaining of the abrasive grains and defects such as scratches are prevented from being generated upon polishing.

    摘要翻译： 电导率提高而不引起研磨磨粒的凝结或沉淀。 此外，实现良好的平坦化，而不会引起要抛光的金属膜或布线的缺陷。 在电抛光方法中，通过在电解抛光液体E中通过电解作用使金属膜表面氧化而移动与金属膜表面滑动接触的抛光垫（15）来平坦化待抛光的金属膜的表面，电抛光液 E至少含有抛光磨粒和用于保持抛光磨粒的静电充电状态的电解质。 由于使用具有高导电性的电解抛光液体，因此可以获得高的电解电流并且扩大电极之间的距离。 此外，在电抛光方法中，使用具有抛光磨粒的良好分散状态的电解抛光液，从而防止在研磨时残留磨粒和划痕等缺陷。

    Etching solution, etching method and method for manufacturing semiconductor device
    6.
    发明申请
    Etching solution, etching method and method for manufacturing semiconductor device 失效
    蚀刻溶液，蚀刻方法和制造半导体器件的方法

    公开(公告)号：US20050070110A1

    公开(公告)日：2005-03-31

    申请号：US10919580

    申请日：2004-08-17

    申请人： Hiizu Ohtorii ,  Kaori Tai ,  Hiroshi Horikoshi ,  Naoki Komai ,  Shuzo Sato

    发明人： Hiizu Ohtorii ,  Kaori Tai ,  Hiroshi Horikoshi ,  Naoki Komai ,  Shuzo Sato

    IPC分类号： H01L21/3205 ,  C09K13/06 ,  C09K13/08 ,  C23F1/26 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/311

    CPC分类号： H01L21/31053 ,  C09K13/06 ,  C09K13/08 ,  C23F1/26 ,  H01L21/3212 ,  H01L21/7684

    摘要： An etching solution includes an anticorrosive for copper or a benzotriazole based anticorrosive in a hydrofluoric acid aqueous solution. An etching method makes use of the etching solution set out above. Moreover, a method for manufacturing a semiconductor device which should include the step of removing copper by the etching method. The method includes the steps of forming copper through a barrier layer made of a metal or metal compound, which is greater in ionization tendency than copper, so as to bury a wiring groove formed in an insulating film with the copper, followed by polishing additional copper and barrier layer formed on the insulating film, and etching a surface layer of the insulating film by use of the etching solution to remove an insulating defective layer made mainly of the barrier layer on the insulating film along with the surface layer of the insulating film.

    摘要翻译： 蚀刻溶液包括在氢氟酸水溶液中对铜或苯并三唑类防腐蚀剂的防锈剂。 蚀刻方法利用上述蚀刻溶液。 此外，一种制造半导体器件的方法，其应包括通过蚀刻方法去除铜的步骤。 该方法包括通过由金属或金属化合物制成的阻挡层形成铜的步骤，其电离度比铜更大，以便用铜掩埋形成在绝缘膜中的布线槽，然后抛光附加的铜 以及形成在绝缘膜上的阻挡层，并且通过使用蚀刻溶液来蚀刻绝缘膜的表面层，以除去绝缘膜上的主要由绝缘膜上的阻挡层形成的绝缘缺陷层以及绝缘膜的表面层。

    Etching solution, etching method and method for manufacturing semiconductor device
    7.
    发明授权
    Etching solution, etching method and method for manufacturing semiconductor device 失效
    蚀刻溶液，蚀刻方法和制造半导体器件的方法

    公开(公告)号：US07033943B2

    公开(公告)日：2006-04-25

    申请号：US10919580

    申请日：2004-08-17

    申请人： Hiizu Ohtorii ,  Kaori Tai ,  Hiroshi Horikoshi ,  Naoki Komai ,  Shuzo Sato

    发明人： Hiizu Ohtorii ,  Kaori Tai ,  Hiroshi Horikoshi ,  Naoki Komai ,  Shuzo Sato

    IPC分类号： H01L21/311

    CPC分类号： H01L21/31053 ,  C09K13/06 ,  C09K13/08 ,  C23F1/26 ,  H01L21/3212 ,  H01L21/7684

    摘要： An etching solution includes an anticorrosive for copper or a benzotriazole based anticorrosive in a hydrofluoric acid aqueous solution. An etching method makes use of the etching solution set out above. Moreover, a method for manufacturing a semiconductor device which should include the step of removing copper by the etching method. The method includes the steps of forming copper through a barrier layer made of a metal or metal compound, which is greater in ionization tendency than copper, so as to bury a wiring groove formed in an insulating film with the copper, followed by polishing additional copper and barrier layer formed on the insulating film, and etching a surface layer of the insulating film by use of the etching solution to remove an insulating defective layer made mainly of the barrier layer on the insulating film along with the surface layer of the insulating film.

    摘要翻译： 蚀刻溶液包括在氢氟酸水溶液中对铜或苯并三唑类防腐蚀剂的防锈剂。 蚀刻方法利用上述蚀刻溶液。 此外，一种制造半导体器件的方法，其应包括通过蚀刻方法去除铜的步骤。 该方法包括通过由金属或金属化合物制成的阻挡层形成铜的步骤，其电离度比铜更大，以便用铜掩埋形成在绝缘膜中的布线槽，然后抛光附加的铜 以及形成在绝缘膜上的阻挡层，并且通过使用蚀刻溶液来蚀刻绝缘膜的表面层，以除去绝缘膜上的主要由绝缘膜上的阻挡层形成的绝缘缺陷层以及绝缘膜的表面层。

    Polishing system, polishing method, polishing pad, and method of forming polishing pad
    8.
    发明授权
    Polishing system, polishing method, polishing pad, and method of forming polishing pad 失效
    抛光系统，抛光方法，抛光垫，以及形成抛光垫的方法

    公开(公告)号：US06520835B1

    公开(公告)日：2003-02-18

    申请号：US09702078

    申请日：2000-10-30

    申请人： Shuzo Sato ,  Hiizu Ohtorii ,  Yasuharu Ohkawa ,  Yutaka Ozawa ,  Taiichi Kusano

    发明人： Shuzo Sato ,  Hiizu Ohtorii ,  Yasuharu Ohkawa ,  Yutaka Ozawa ,  Taiichi Kusano

    IPC分类号： B24B4900

    CPC分类号： B24B37/04 ,  B24B49/16

    摘要： Disclosed is a polishing system used for polishing a surface to be polished of an object to be polished by a polishing pad, which is capable of improving uniformity of the surface to be polished of the object to be polished by positively, accurately adjusting a polishing pressure, and a polishing method using the polishing system. Concretely, the surface to be polished of a wafer as the object to be polished is polished by relatively moving, along a plane, a polishing surface of the rotating polishing pad and the surface to be polished of the wafer in slide-contact with each other, and adjusting a pressing force applied from the polishing pad to the wafer in accordance with a polishing pressure previously set depending on a relative-positional relationship between the polishing surface of the polishing pad and the surface to be polished of the wafer.

    摘要翻译： 公开了一种抛光系统，用于通过抛光垫抛光待抛光物体的待抛光表面，该抛光系统能够通过积极地精确地调节抛光压力来提高待抛光物体的抛光表面的均匀性 ，以及使用该研磨系统的研磨方法。 具体地说，作为待研磨对象物的被研磨物的被研磨面，沿着平面相对移动抛光垫的研磨面和晶片的被研磨面相互滑动地进行研磨， 并且根据预先根据抛光垫的抛光表面和待抛光表面之间的相对位置关系预先设定的抛光压力，调整从抛光垫施加到晶片的压力。

    Polishing system and method with polishing pad pressure adjustment
    9.
    发明授权
    Polishing system and method with polishing pad pressure adjustment 失效
    抛光系统和抛光垫压力调节方法

    公开(公告)号：US6139400A

    公开(公告)日：2000-10-31

    申请号：US63006

    申请日：1998-04-21

    申请人： Shuzo Sato ,  Hiizu Ohtorii ,  Yasuharu Ohkawa ,  Yutaka Ozawa ,  Taiichi Kusano

    发明人： Shuzo Sato ,  Hiizu Ohtorii ,  Yasuharu Ohkawa ,  Yutaka Ozawa ,  Taiichi Kusano

    IPC分类号： B24B37/04 ,  B24B49/16 ,  B24B49/00

    CPC分类号： B24B37/04 ,  B24B49/16

    摘要： Disclosed is a polishing system used for polishing a surface to be polished of an object to be polished by a polishing pad, which is capable of improving uniformity of the surface to be polished of the object to be polished by positively, accurately adjusting a polishing pressure, and a polishing method using the polishing system. Concretely, the surface to be polished of a wafer as the object to be polished is polished by relatively moving, along a plane, a polishing surface of the rotating polishing pad and the surface to be polished of the wafer in slide-contact with each other, and adjusting a pressing force applied from the polishing pad to the wafer in accordance with a polishing pressure previously set depending on a relative-positional relationship between the polishing surface of the polishing pad and the surface to be polished of the wafer.

    摘要翻译： 公开了一种抛光系统，用于通过抛光垫抛光待抛光物体的待抛光表面，该抛光系统能够通过积极地精确地调节抛光压力来提高待抛光物体的抛光表面的均匀性 ，以及使用该研磨系统的研磨方法。 具体地说，作为待研磨对象物的被研磨物的被研磨面，沿着平面相对移动抛光垫的研磨面和晶片的被研磨面相互滑动地进行研磨， 并且根据预先根据抛光垫的抛光表面和待抛光表面之间的相对位置关系预先设定的抛光压力，调整从抛光垫施加到晶片的压力。

    Polishing system, polishing method, polishing pad, and method of forming polishing pad
    10.
    发明授权
    Polishing system, polishing method, polishing pad, and method of forming polishing pad 失效
    抛光系统，抛光方法，抛光垫，以及形成抛光垫的方法

    公开(公告)号：US06722962B1

    公开(公告)日：2004-04-20

    申请号：US09678436

    申请日：2000-10-02

    申请人： Shuzo Sato ,  Hiizu Ohtorii ,  Yasuharu Ohkawa ,  Yutaka Ozawa ,  Taiichi Kusano

    发明人： Shuzo Sato ,  Hiizu Ohtorii ,  Yasuharu Ohkawa ,  Yutaka Ozawa ,  Taiichi Kusano

    IPC分类号： B24B704

    CPC分类号： B24B49/16 ,  B24B37/04

    摘要： Disclosed is a polishing system used for polishing a surface to be polished of an object to be polished by a polishing pad, which is capable of improving uniformity of the surface to be polished of the object to be polished by positively, accurately adjusting a polishing pressure, and a polishing method using the polishing system. Concretely, the surface to be polished of a wafer as the object to be polished is polished by relatively moving, along a plane, a polishing surface of the rotating polishing pad and the surface to be polished of the wafer in slide-contact with each other, and adjusting a pressing force applied from the polishing pad to the wafer in accordance with a polishing pressure previously set depending on a relative-positional relationship between the polishing surface of the polishing pad and the surface to be polished of the wafer.

    摘要翻译： 公开了一种抛光系统，用于通过抛光垫抛光待抛光物体的待抛光表面，该抛光系统能够通过积极地精确地调节抛光压力来提高待抛光物体的抛光表面的均匀性 ，以及使用该研磨系统的研磨方法。 具体地说，作为待研磨对象物的被研磨物的被研磨面，沿着平面相对移动抛光垫的研磨面和晶片的被研磨面相互滑动地进行研磨， 并且根据预先根据抛光垫的抛光表面和待抛光表面之间的相对位置关系预先设定的抛光压力，调整从抛光垫施加到晶片的压力。