-
公开(公告)号：US09920428B2
公开(公告)日：2018-03-20
申请号：US14965367
申请日：2015-12-10
CPC分类号： C23C16/50 , C23C14/0605 , C23C14/325 , C23C14/564 , H01J37/32055 , H01J37/32357 , H05H1/50
摘要： A film deposition apparatus includes: a plasma generating section configured to generate plasma between a cathode target and an anode; a film deposition chamber in which a base material is placed; and a magnetic-field filter section configured to remove a particle from the plasma by a magnetic field and to transfer the plasma to the film deposition chamber. The magnetic-field filter section includes: a first housing area to which a first voltage is applied; and a second housing area, provided downstream of the first housing area in the moving direction of the plasma, to which a second voltage is applied.
-
2.发明申请DEPOSITION APPARATUS, FILM MANUFACTURING METHOD, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD 审中-公开沉积装置，薄膜制造方法和磁记录介质制造方法公开(公告)号：US20100003422A1
公开(公告)日：2010-01-07
申请号：US12480195
申请日：2009-06-08
IPC分类号： C23C16/50
CPC分类号： C23C14/0605 , C23C14/325 , C23C14/564 , H01J37/32055 , H01J37/32357 , H01J37/32871
摘要： A deposition apparatus includes a plasma generating unit that generates an arc discharge between a target and an anode to generate plasma; a deposition chamber in which a base is disposed; and a plasma transfer unit that transfers the plasma to the deposition chamber, wherein at least part of the plasma transfer unit is electrically separated from the plasma generating unit and the deposition chamber, and a negative voltage is applied to at least part of the plasma transfer unit.
摘要翻译： 沉积设备包括：等离子体产生单元，其在目标和阳极之间产生电弧放电以产生等离子体; 沉积室，其中设置有基座; 以及等离子体转移单元，其将所述等离子体转移到所述沉积室，其中所述等离子体转移单元的至少一部分与所述等离子体产生单元和所述沉积室电分离，并且将负电压施加到所述等离子体转移的至少一部分 单元。
-
公开(公告)号：US09567674B2
公开(公告)日：2017-02-14
申请号：US12792214
申请日：2010-06-02
IPC分类号： C23C14/00 , C25B11/00 , C25B13/00 , C23C16/50 , C23C14/06 , C23C14/32 , C23C14/56 , H01J37/32 , H05H1/50
CPC分类号： C23C16/50 , C23C14/0605 , C23C14/325 , C23C14/564 , H01J37/32055 , H01J37/32357 , H05H1/50
摘要： A film deposition apparatus includes: a plasma generating section configured to generate plasma between a cathode target and an anode; a film deposition chamber in which a base material is placed; and a magnetic-field filter section configured to remove a particle from the plasma by a magnetic field and to transfer the plasma to the film deposition chamber. The magnetic-field filter section includes: a first housing area to which a first voltage is applied; and a second housing area, provided downstream of the first housing area in the moving direction of the plasma, to which a second voltage is applied.
摘要翻译： 一种成膜装置，包括：等离子体产生部，被配置为在阴极靶和阳极之间产生等离子体; 其中放置有基材的成膜室; 以及磁场滤波器部，其构造成通过磁场从等离子体除去粒子，并将等离子体转印到成膜室。 磁场滤波器部分包括：施加第一电压的第一容纳区域; 以及第二壳体区域，设置在等离子体的移动方向上的第一壳体区域的下游，施加第二电压。
-
公开(公告)号：US20160194757A1
公开(公告)日：2016-07-07
申请号：US14965367
申请日：2015-12-10
IPC分类号： C23C16/50
CPC分类号： C23C16/50 , C23C14/0605 , C23C14/325 , C23C14/564 , H01J37/32055 , H01J37/32357 , H05H1/50
摘要： A film deposition apparatus includes: a plasma generating section configured to generate plasma between a cathode target and an anode; a film deposition chamber in which a base material is placed; and a magnetic-field filter section configured to remove a particle from the plasma by a magnetic field and to transfer the plasma to the film deposition chamber. The magnetic-field filter section includes: a first housing area to which a first voltage is applied; and a second housing area, provided downstream of the first housing area in the moving direction of the plasma, to which a second voltage is applied.
摘要翻译： 一种成膜装置，包括：等离子体产生部，被配置为在阴极靶和阳极之间产生等离子体; 其中放置有基材的成膜室; 以及磁场滤波器部，其构造成通过磁场从等离子体除去粒子，并将等离子体转印到成膜室。 磁场滤波器部分包括：施加第一电压的第一容纳区域; 以及第二壳体区域，设置在等离子体的移动方向上的第一壳体区域的下游，施加第二电压。
-
公开(公告)号：US6045975A
公开(公告)日：2000-04-04
申请号：US64664
申请日：1993-05-21
申请人： Motoaki Tani , Eiji Horikoshi , Isao Watanabe , Shoichi Miyahara , Takashi Ito , Makoto Sasaki
发明人： Motoaki Tani , Eiji Horikoshi , Isao Watanabe , Shoichi Miyahara , Takashi Ito , Makoto Sasaki
CPC分类号： H05K3/0023 , G03F7/037 , H05K3/4676 , H05K2201/0154 , H05K2201/0212 , H05K2203/0773 , H05K3/381 , H05K3/4644 , H05K3/467 , Y10S430/107 , Y10S430/121 , Y10S430/126
摘要： The film forming, photosensitive, heat-resistant resin composition comprising a varnish of a polyimide precursor having no photosensitivity in itself, a polymerizable monomer or oligomer compatible with said varnish and capable of providing a high-heat-resistant polymer upon being polymerized, and a polymerization initiator for said monomer or oligomer. The resin composition is useful for the production of circuit substrates and semiconductor devices for high-density mounting including multi-chip modules or the like, such as printed circuits, printed boards, wiring boards and electronic components, since it can effectively avoid a reduction of the layer thickness during the film formation, and ensures a low cost production process. The pattern formation process using the such resin composition is also disclosed.
摘要翻译： 包含本身没有光敏性的聚酰亚胺前体的清漆，与所述清漆相容的可聚合单体或低聚物并且能够在聚合时提供高耐热聚合物的成膜感光耐热性树脂组合物，以及 所述单体或低聚物的聚合引发剂。 树脂组合物可用于生产电路基板和用于高密度安装的半导体器件，包括印刷电路，印刷电路板，布线板和电子部件等多芯片模块等，因为它可以有效地避免减少 成膜期间的层厚度，并且确保低成本的生产工艺。 还公开了使用这种树脂组合物的图案形成方法。
-
6.发明授权Process for using photosensitive, heat-resistant resin composition to form patterns 失效使用光敏耐热树脂组合物形成图案的方法
公开(公告)号：US6013419A
公开(公告)日：2000-01-11
申请号：US418169
申请日：1995-04-06
申请人： Motoaki Tani , Eiji Horikoshi , Isao Watanabe , Shoichi Miyahara , Takashi Ito , Makoto Sasaki
发明人： Motoaki Tani , Eiji Horikoshi , Isao Watanabe , Shoichi Miyahara , Takashi Ito , Makoto Sasaki
CPC分类号： H05K3/0023 , G03F7/037 , H05K3/4676 , H05K2201/0154 , H05K2201/0212 , H05K2203/0773 , H05K3/381 , H05K3/4644 , H05K3/467 , Y10S430/107 , Y10S430/121 , Y10S430/126
摘要： A method for forming a photosensitive, heat-resistant resin composition film including the step of coating a base material with a varnish made up of a polyimide precursor having no photosensitivity, a photopolymerizable monomer or oligomer capable of providing a high-heat-resistant polymer upon being polymerized, and a polymerization initiator for the monomer or oligomer. The coating is exposed to a light pattern to polymerize the monomer or oligomer in a pattern. The remaining coating is selectively removed from the non-patterned areas. The patterned coating is heat treated to cure the polyimide precursor, thereby forming the film.
摘要翻译： 一种形成感光耐热树脂组合物膜的方法，包括以下步骤：用由不具有光敏性的聚酰亚胺前体组成的清漆，能够提供高耐热性聚合物的光聚合单体或低聚物涂覆在基材上 聚合的单体或低聚物的聚合引发剂。 将该涂层暴露于光图案以使图案中的单体或低聚物聚合。 从非图案化区域选择性地除去剩余的涂层。 对图案化的涂层进行热处理以固化聚酰亚胺前体，从而形成膜。
-
7.发明授权
公开(公告)号：US5972807A
公开(公告)日：1999-10-26
申请号：US772260
申请日：1996-12-23
申请人： Motaki Tani , Eiji Horikoshi , Isao Watanabe , Shoichi Miyahara , Takashi Ito , Makoto Sasaki
发明人： Motaki Tani , Eiji Horikoshi , Isao Watanabe , Shoichi Miyahara , Takashi Ito , Makoto Sasaki
CPC分类号： H05K3/4676 , H05K2201/0154 , H05K2201/0212 , H05K2203/0773 , H05K3/0023 , H05K3/381 , H05K3/4644 , H05K3/467 , Y10T442/2033 , Y10T442/2082 , Y10T442/209 , Y10T442/2861
摘要： A film forming, photosensitive, heat-resistant resin composition including a varnish of a polyimide precursor having no photosensitivity in itself, a polymeriziable monomer or oligomer compatible with the varnish and capable of providing a high-heat-resistant polymer upon being polymerized, and a polymerization initiator for the monomer or oligomer. The resin composition is useful for the production of circuit substrates and semiconductor devices for high-density mounting, since it can effectively avoid a reduction of the layer thickness during film formation, and ensures a low cost production process. The pattern formation process using such a resin composition is also disclosed. The polymeric composite having a particles-in-matrix microstructure and the production process thereof are also disclosed.
摘要翻译： 一种成膜感光耐热树脂组合物，其包含本身不具有光敏性的聚酰亚胺前体的清漆，与该清漆相容的可聚合的单体或低聚物，并且能够在聚合时提供高耐热聚合物， 用于单体或低聚物的聚合引发剂。 树脂组合物可用于生产用于高密度安装的电路基板和半导体器件，因为它可以有效地避免成膜期间的层厚度的降低，并且确保低成本的生产工艺。 还公开了使用这种树脂组合物的图案形成方法。 还公开了具有颗粒 - 基质微结构的聚合物复合材料及其制备方法。
-
公开(公告)号：US5308929A
公开(公告)日：1994-05-03
申请号：US919909
申请日：1992-07-27
申请人： Motoaki Tani , Shoichi Miyahara , Makoto Sasaki , Eiji Horikoshi , Isao Kawamura
发明人： Motoaki Tani , Shoichi Miyahara , Makoto Sasaki , Eiji Horikoshi , Isao Kawamura
IPC分类号： H05K3/46 , H01L21/48 , H01L23/498 , H05K3/00 , H05K1/00
CPC分类号： H05K3/0023 , H01L21/486 , H01L23/49827 , H01L2924/0002 , H05K2201/0195 , H05K2201/09509 , H05K2201/09827 , H05K2201/09845 , H05K3/4644
摘要： A via hole structure for interlayer connection formed in an insulating film and a process for the formation of the same. Via holes are formed in an insulating film of a multilayer interconnected board or the like so as to have a shape such that when a metallic film for wiring is formed on the insulating film, the metal film can completely fill up the via holes. The via holes are formed by gradually increasing from the bottom toward the top of an insulating layer 8 the apertures of the via holes 7 formed in the insulating layer 8, comprised of a plurality of insulating resin film or photosensitive insulating resin film layers 2, 5, in a multilayer interconnected board comprising the insulating layer 8 laminated alternately with a wiring layer 13 comprised of an electric conductor.
摘要翻译： 在绝缘膜中形成的用于层间连接的通孔结构及其形成方法。 在多层互连板等的绝缘膜中形成通孔，以具有这样的形状，使得当在绝缘膜上形成用于布线的金属膜时，金属膜可以完全填满通孔。 通孔从绝缘层8的底部向顶部逐渐增加，形成在绝缘层8中的通孔7的孔由多个绝缘树脂膜或感光绝缘树脂膜层2,5 在包括与由导电体构成的布线层13交替层叠的绝缘层8的多层互连板中。
-
公开(公告)号：US20100316814A1
公开(公告)日：2010-12-16
申请号：US12792214
申请日：2010-06-02
CPC分类号： C23C16/50 , C23C14/0605 , C23C14/325 , C23C14/564 , H01J37/32055 , H01J37/32357 , H05H1/50
摘要： A film deposition apparatus includes: a plasma generating section configured to generate plasma between a cathode target and an anode; a film deposition chamber in which a base material is placed; and a magnetic-field filter section configured to remove a particle from the plasma by a magnetic field and to transfer the plasma to the film deposition chamber. The magnetic-field filter section includes: a first housing area to which a first voltage is applied; and a second housing area, provided downstream of the first housing area in the moving direction of the plasma, to which a second voltage is applied.
摘要翻译： 一种成膜装置，包括：等离子体产生部，被配置为在阴极靶和阳极之间产生等离子体; 其中放置有基材的成膜室; 以及磁场滤波器部，其构造成通过磁场从等离子体除去粒子，并将等离子体转印到成膜室。 磁场滤波器部分包括：施加第一电压的第一容纳区域; 以及第二壳体区域，设置在等离子体的移动方向上的第一壳体区域的下游，施加第二电压。
-
-
-
-
-
-
-
-
搜索结果
9 条记录 (耗时 0.022 秒)
