摘要:
A manufacturing method for a solid-state image capturing device includes a color filter patterning step of patterning the color filters in such a manner that a predetermined interval is formed between adjacent color filter materials of different colors; and a color filter forming step of heat treating and fluidizing the patterned color filter materials and further curing the color filter materials to form color filters of different colors.
摘要:
A solid image pick-up element has a pixel region, an output region located near the pixel region, and a field portion located remote from the pixel region, all of which are formed at un upper layer of a semiconductor substrate. The pixel region is provided with plural rows of light receiving portions for performing photoelectric conversion with respect to light received thereby. Between the plural rows of the light receiving portions are interposed transfer portions for transferring signals obtained through the photoelectric conversion. The output region is provided with an output portion for outputting the signals transferred from the transfer portions. The semiconductor substrate is covered with three dielectric films, and an opening is formed through two dielectric films at a location above the output portion.
摘要:
A solid-state image capturing device according to the present invention is provided, in which a plurality of conductive films is formed via respective insulation films, and an optical waveguide is formed above a light receiving section, a plurality of light receiving sections is provided in a surface portion of a semiconductor substrate, and the plurality of conductive films is formed on a region other than a region right above the light receiving section, wherein a plural-layered optical waveguide tube is formed as the optical waveguide, with the same material as at least one of the plural-layered conductive films.
摘要:
A solid-state imaging device is disclosed. The solid-state imaging device includes: a plurality of photosensitive elements for converting light into electric charge, the plurality of photosensitive elements being arranged in a matrix form; a plurality of first charge transfer portions for transferring the converted electric charge in a first direction, the plurality of first charge transfer portions being formed between the plurality of photosensitive elements arranged along a second direction; a second charge transfer portion for receiving the electric charge from the plurality of first charge transfer portions and for transferring the electric charge in the second direction, the second charge transfer portion being provided at an end of each of the plurality of first charge transfer portions; a plurality of light converging portions for converging the light on each of the plurality of photosensitive elements, the plurality of light converging portions being formed over the plurality of photosensitive elements, respectively; and wherein the plurality of light converging portions are microlenses, each of the microlens having substantially the same curvature in the first and second directions.
摘要:
A solid image pick-up element comprises a semiconductor substrate, a photoelectric transfer region formed on the substrate, and an optical black region formed on the substrate. Each of the photoelectric transfer region and the optical black region includes a plurality of regularly arrayed light receiving units. A shielding film is formed on the light receiving units of the optical black region and is covered with a shielding layer. Preferably, the shielding film comprises three color filters in red, green and blue. Even if the shielding film causes light leakage, the shielding layer makes light damp, thereby reducing the occurrence of light leakage.
摘要:
The production of a solid-state imaging device includes the steps of: smoothing the surface of a semiconductor substrate by embedding a polymeric or polymerizable material into recessed portions in the surface of the substrate on which a plurality of solid-state imaging devices are formed, forming optical component parts on the substrate, and cutting the substrate along scribe lines that constitute part of the recessed portions.
摘要:
A manufacturing method for a solid-state image capturing device includes a color filter patterning step of patterning the color filters in such a manner that a predetermined interval is formed between adjacent color filter materials of different colors; and a color filter forming step of heat treating and fluidizing the patterned color filter materials and further curing the color filter materials to form color filters of different colors.
摘要:
A solid-state imaging device is disclosed. The solid-state imaging device includes: a plurality of photosensitive elements for converting light into electric charge, the plurality of photosensitive elements being arranged in a matrix form; a plurality of first charge transfer portions for transferring the converted electric charge in a first direction, the plurality of first charge transfer portions being formed between the plurality of photosensitive elements arranged along a second direction; a second charge transfer portion for receiving the electric charge from the plurality of first charge transfer portions and for transferring the electric charge in the second direction, the second charge transfer portion being provided at an end of each of the plurality of first charge transfer portions; a plurality of light converging portions for converging the light on each of the plurality of photosensitive elements, the plurality of light converging portions being formed over the plurality of photosensitive elements, respectively; and wherein the plurality of light converging portions are microlenses, each of the microlens having substantially the same curvature in the first and second directions.