摘要:
A solid image pick-up element has a pixel region, an output region located near the pixel region, and a field portion located remote from the pixel region, all of which are formed at un upper layer of a semiconductor substrate. The pixel region is provided with plural rows of light receiving portions for performing photoelectric conversion with respect to light received thereby. Between the plural rows of the light receiving portions are interposed transfer portions for transferring signals obtained through the photoelectric conversion. The output region is provided with an output portion for outputting the signals transferred from the transfer portions. The semiconductor substrate is covered with three dielectric films, and an opening is formed through two dielectric films at a location above the output portion.
摘要:
A solid image pick-up element comprises a semiconductor substrate, a photoelectric transfer region formed on the substrate, and an optical black region formed on the substrate. Each of the photoelectric transfer region and the optical black region includes a plurality of regularly arrayed light receiving units. A shielding film is formed on the light receiving units of the optical black region and is covered with a shielding layer. Preferably, the shielding film comprises three color filters in red, green and blue. Even if the shielding film causes light leakage, the shielding layer makes light damp, thereby reducing the occurrence of light leakage.
摘要:
A semiconductor device comprises a photoelectric conversion portion formed on a semiconductor substrate, a first transparent film provided on the photoelectric conversion portion, and an interlayer lens provided on the first transparent film at a position corresponding to the photoelectric conversion portion, in which the interlayer lens has a higher refractive index than the first transparent film, and at least one of upper and lower surfaces of a second transparent film formed with a thin film multilayer structure of two or more types of compounds is formed to have a protruded shape.
摘要:
A process for manufacturing a semiconductor device comprising the steps of: forming a transparent film on a semiconductor substrate including a photoelectric conversion section, the transparent film having a concave portion above the photoelectric conversion section; forming a material film on the transparent film, the material film being made of a photosensitive material having a refractive index higher than that of the transparent film; and irradiating selectively a predetermined portion of the material film with rays, and then developing the material film, whereby forming an intralayer lens having a convex portion facing into the concave portion.
摘要:
A semiconductor device comprises a photoelectric conversion portion formed on a semiconductor substrate, a first transparent film provided on the photoelectric conversion portion, and an interlayer lens provided on the first transparent film at a position corresponding to the photoelectric conversion portion, in which the interlayer lens has a higher refractive index than the first transparent film, and at least one of upper and lower surfaces of a second transparent film formed with a thin film multilayer structure of two or more types of compounds is formed to have a protruded shape.
摘要:
The conventional holding mechanism for foldable side rails have such problems that the release lever can be accidentally pressed for release action and that if a double lock is employed for preventing it, automatic holding action cannot be performed.This invention proposes a holding mechanism for foldable side rails, characterized in that the holding mechanism 4 is provided at an end of an upper horizontal rail member 1u and comprises a mechanism support member 5 connected with the stanchion member provided at said end; the mechanism support member 5 has a stopper pin set 12 capable of advancing and receding; the stopper pin set 12 is biased in the advancing direction by a spring 13; the stanchion member has a fitting hole 10 allowing the stopper pin set 12 to be fitted in it when the stanchion member is kept erect; the mechanism support member further has a release lever 6 engaged with a mechanically driven trigger site 15 provided in connection with the stopper pin set for making the stopper pin set recede against the force of the spring; a play mechanism is provided between the release lever and the mechanically driven trigger site; and the mechanism support member further has a release prevention mechanism for preventing the movement of the release lever in the release allowing direction.
摘要:
A solid-state imaging device includes: a semiconductor layer having a top surface; a plurality of first charge transfer electrodes formed on the semiconductor layer and extending in a serpentine pattern in a first direction at a prescribed cycle, the first direction being substantially parallel with the top surface of the semiconductor layer; a plurality of second charge transfer electrodes formed on the semiconductor layer and extending in a serpentine pattern in the first direction at a prescribed cycle; a plurality of charge transfer sections formed in the semiconductor layer, and extending in a serpentine pattern in a second direction, the second direction being substantially perpendicular to the first direction; and a plurality of photoelectric converters formed in areas of the semiconductor layer bounded by the first and second charge transfer electrodes, each photoelectric converter provided for generating a signal charge in response to incident light, and for supplying the signal charge to an adjacent one of the charge transfer sections.
摘要:
The conventional holding mechanism for foldable side rails have such problems that the release lever can be accidentally pressed for release action and that if a double lock is employed for preventing it, automatic holding action cannot be performed.This invention proposes a holding mechanism for foldable side rails, characterized in that the holding mechanism 4 is provided at an end of an upper horizontal rail member 1u and comprises a mechanism support member 5 connected with the stanchion member provided at said end; the mechanism support member 5 has a stopper pin set 12 capable of advancing and receding; the stopper pin set 12 is biased in the advancing direction by a spring 13; the stanchion member has a fitting hole 10 allowing the stopper pin set 12 to be fitted in it when the stanchion member is kept erect; the mechanism support member further has a release lever 6 engaged with a mechanically driven trigger site 15 provided in connection with the stopper pin set for making the stopper pin set recede against the force of the spring; a play mechanism is provided between the release lever and the mechanically driven trigger site; and the mechanism support member further has a release prevention mechanism for preventing the movement of the release lever in the release allowing direction.
摘要:
There is provided a method for quantitatively evaluating properties of a graphite structure of a gray cast iron based on a number and a thick and thin degree of graphite components in the structure. In particular, only non-spherical graphite pieces having an average size of 5 μm or more are extracted from a preprocessed image of the graphite structure, and counted (Step S5 of FIG. 3). Further, only graphite pieces having a maximum length of 50 μm or more and less than 150 μm are selected therefrom, and a length and an area of each selected graphite piece are measured (Step S6). An area of an assumptive representative graphite piece having a maximum length (a maximum size) of 100 μm is calculated from these data, and divided by the length 100 μm, to obtain the thick and thin degree (Step S7). The thick and thin degree is shown with the number of the graphite pieces (Step S8).
摘要:
There is provided a method for quantitatively evaluating properties of a graphite structure of a gray cast iron based on a number and a thick and thin degree of graphite components in the structure. In particular, only non-spherical graphite pieces having an average size of 5 μm or more are extracted from a preprocessed image of the graphite structure, and counted (Step S5 of FIG. 3). Further, only graphite pieces having a maximum length of 50 μm or more and less than 150 μm are selected therefrom, and a length and an area of each selected graphite piece are measured (Step S6). An area of an assumptive representative graphite piece having a maximum length (a maximum size) of 100 μm is calculated from these data, and divided by the length 100 μm, to obtain the thick and thin degree (Step S7). The thick and thin degree is shown with the number of the graphite pieces (Step S8).