公开(公告)号：US06964902B2

公开(公告)日：2005-11-15

申请号：US10787510

申请日：2004-02-26

申请人： Robert F. Steimle ,  Jane A. Yater ,  Gowrishankar L. Chindalore ,  Craig T. Swift ,  Steven G. H. Anderson ,  Ramachandran Muralidhar

发明人： Robert F. Steimle ,  Jane A. Yater ,  Gowrishankar L. Chindalore ,  Craig T. Swift ,  Steven G. H. Anderson ,  Ramachandran Muralidhar

IPC分类号： H01L21/28 ,  H01L21/3213 ,  H01L21/336 ,  H01L21/44 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/792

CPC分类号： H01L21/32135 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/32134 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11526

摘要： Nanoclusters are blanket deposited on an integrated circuit and then removed from regions where the nanoclusters are not desired. A sacrificial layer is formed in those regions where the nanoclusters are not desired prior to the blanket deposition. The nanoclusters and the sacrificial layer are then removed. In one form, the sacrificial layer includes a deposited nitride containing or oxide containing layer. Alternatively, the sacrificial layer includes at least one of a pad oxide or a pad nitride layer previously used to form isolation regions in the substrate. Nanocluster devices and non-nanocluster devices may then be integrated onto the same integrated circuit. The use of a sacrificial layer protects underlying layers thereby preventing the degradation of performance of the subsequently formed non-nanocluster devices.

公开(公告)号：US06849487B2

公开(公告)日：2005-02-01

申请号：US10445791

申请日：2003-05-27

申请人： William J. Taylor, Jr. ,  Olubunmi O. Adetutu ,  Steven G. H. Anderson

发明人： William J. Taylor, Jr. ,  Olubunmi O. Adetutu ,  Steven G. H. Anderson

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/44 ,  H01L21/4763 ,  H01L29/51 ,  H01L29/786

CPC分类号： H01L29/785 ,  B82Y10/00 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28273 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66795 ,  Y10S438/947

摘要： A method of forming a conductive structure having a length that is less than the length define by photolithographic patterning. A silicon layer (12) is formed in a MeOx dielectric layer (11) is photolithographically patterned to a predetermined first length. A metal layer (31) is formed conformally to at least the sidewalls of the silicon layer and then is reacted with the silicon to form a metal silicide (41). In particular, metal silicide abutments (411,412) are formed contiguous to sidewalls (421,422) of a reduced conductor (42). The remaining metal layer and the metal silicide are etched away, resulting in a conductor having predetermined second length that is less than the predetermined first length.

摘要翻译： 通过光刻图案形成具有小于长度的长度的导电结构的方法。 在MeOx电介质层（11）中形成的硅层（12）被光刻地图案化到预定的第一长度。 金属层（31）至少与硅层的侧壁共形形成，然后与硅反应形成金属硅化物（41）。 特别地，与还原导体（42）的侧壁（421,422）邻接地形成金属硅化物接合部（411,412）。 蚀刻剩余的金属层和金属硅化物，导致具有小于预定第一长度的预定第二长度的导体。