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公开(公告)号：US20110061810A1
公开(公告)日：2011-03-17
申请号：US12720957
申请日：2010-03-10
申请人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Johanes F. Swenberg , Anchuan Wang , Nitin K. Ingle , Manish Hemkar , Jose A. Marin
发明人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Johanes F. Swenberg , Anchuan Wang , Nitin K. Ingle , Manish Hemkar , Jose A. Marin
IPC分类号： H01L21/3065
CPC分类号： H01L21/67115 , H01L21/0223 , H01L21/67109 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L21/76232 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
摘要翻译： 本文描述了用于制造适用于窄间距应用的半导体器件的装置和方法及其制造方法。 公开了通过氧化材料层的表面以形成氧化物层来形成和/或形成材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并周期性地重复氧化和去除工艺，直到材料层形成所需的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。
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公开(公告)号：US20110065276A1
公开(公告)日：2011-03-17
申请号：US12720942
申请日：2010-03-10
申请人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Wei Liu , Johanes F. Swenberg , Shiyu Sun
发明人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Wei Liu , Johanes F. Swenberg , Shiyu Sun
IPC分类号： H01L21/311 , H01L21/3065
CPC分类号： H01L21/76232 , H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
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公开(公告)号：US08367983B2
公开(公告)日：2013-02-05
申请号：US12483770
申请日：2009-06-12
CPC分类号： H01L21/67115
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译： 公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。 反射层设置在处理室的窗口上。 提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。 在第二波长范围内的辐射被反射层反射。
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公开(公告)号：US08314371B2
公开(公告)日：2012-11-20
申请号：US12611958
申请日：2009-11-04
申请人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
发明人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
IPC分类号： H01B1/00
CPC分类号： H01L21/67259 , C23C16/46 , H01L21/324 , H01L21/67115 , H01L21/68 , H01L21/681 , H01L21/6835 , H01L21/68742
摘要： Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.
摘要翻译： 描述了包括将衬底轴向对准衬底支撑件或经验确定的位置的用于快速热处理平面衬底的方法和装置。 所述方法和装置包括确定衬底和衬底支撑件的相对取向的传感器系统。
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公开(公告)号：US20090289053A1
公开(公告)日：2009-11-26
申请号：US12483770
申请日：2009-06-12
CPC分类号： H01L21/67115
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译： 公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。 反射层设置在处理室的窗口上。 提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。 在第二波长范围内的辐射被反射层反射。
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6.发明授权公开(公告)号：US07509035B2
公开(公告)日：2009-03-24
申请号：US11195395
申请日：2005-08-02
申请人： Joseph M. Ranish , Corina E. Tanasa , Sundar Ramamurthy , Claudia Lai , Ravi Jallepally , Ramachandran Balasubramanian , Aaron M. Hunter , Agus Tjandra , Norman Tam
发明人： Joseph M. Ranish , Corina E. Tanasa , Sundar Ramamurthy , Claudia Lai , Ravi Jallepally , Ramachandran Balasubramanian , Aaron M. Hunter , Agus Tjandra , Norman Tam
CPC分类号： H01L21/67115 , H05B3/0047
摘要： A thermal processing chamber includes a substrate support rotating about a center axis and a lamphead of plural lamps in an array having a predetermined difference in radiance pattern between them. The radiance pattern includes a variation in diffuseness or collimation. In one embodiment, the center lines of all of the lamps are disposed away from the center axis. The array can be an hexagonal array, in which the center axis is located at a predetermined position between neighboring lamps.
摘要翻译： 热处理室包括以中心轴为中心旋转的基板支撑体和具有预定的它们之间的辐射图形差异的阵列中的多个灯的灯头。 辐射图包括扩散或准直的变化。 在一个实施例中，所有灯的中心线远离中心轴设置。 阵列可以是六边形阵列，其中中心轴位于相邻灯之间的预定位置。
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公开(公告)号：US08283607B2
公开(公告)日：2012-10-09
申请号：US12100179
申请日：2008-04-09
CPC分类号： H01L21/67115 , H01L21/67248
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译： 公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。 反射层设置在处理室的窗口上。 提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。 在第二波长范围内的辐射被反射层反射。
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公开(公告)号：US20090298300A1
公开(公告)日：2009-12-03
申请号：US12437257
申请日：2009-05-07
IPC分类号： H01L21/324 , H01L21/67
CPC分类号： H01L21/324 , H01L21/67115 , H01L21/67248
摘要： Methods and apparatus for hyperbaric rapid thermal processing of a substrate are described. Methods of processing a substrate in a rapid thermal processing chamber are described that include passing a substrate from outside the chamber through an access port onto a support in the interior region of the processing chamber, closing a port door sealing the chamber, pressurizing the chamber to a pressure greater than 1.5 atmospheres absolute and directing radiant energy toward the substrate. Hyperbaric rapid thermal processing chambers are described which are constructed to withstand pressures greater than at least about 1.5 atmospheres absolute or, optionally, 2 atmospheres of absolute pressure. Processing chambers may include pressure control valves to control the pressure within the chamber.
摘要翻译： 描述了用于衬底高压快速热处理的方法和装置。 描述了在快速热处理室中处理基板的方法，其包括将基板从室外通过进入端口传送到处理室的内部区域中的支撑件上，关闭密封该室的端口门，将该室加压至 绝对压力大于1.5个大气压，并将辐射能量引向基板。 描述了高压快速热处理室，其被构造为承受大于至少约1.5大气压绝对压力或任选地大气压绝压的压力。 处理室可以包括压力控制阀，以控制室内的压力。
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9.发明申请公开(公告)号：US20080169282A1
公开(公告)日：2008-07-17
申请号：US12055045
申请日：2008-03-25
申请人： KHURSHED SORABJI , Alexander N. Lerner , Joseph M. Ranish , Aaron M. Hunter , Bruce Adams , Mehran Behdjat , Rajesh S. Ramanujam
发明人： KHURSHED SORABJI , Alexander N. Lerner , Joseph M. Ranish , Aaron M. Hunter , Bruce Adams , Mehran Behdjat , Rajesh S. Ramanujam
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： Apparatus and methods for achieving uniform heating or cooling of a substrate during a rapid thermal process are disclosed. More particularly, apparatus and methods for controlling the temperature of an edge ring supporting a substrate and/or a reflector plate during a rapid thermal process to improve temperature uniformity across the substrate are disclosed, which include a thermal mass or plate adjacent the edge ring to heat or cool the edge ring.
摘要翻译： 公开了用于在快速热处理期间实现基板均匀加热或冷却的装置和方法。 更具体地，公开了用于在快速热处理期间控制支撑衬底和/或反射板的边缘环的温度以改善衬底上的温度均匀性的装置和方法，其包括邻近边缘环到 加热或冷却边缘环。
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公开(公告)号：US20080142208A1
公开(公告)日：2008-06-19
申请号：US11611704
申请日：2006-12-15
CPC分类号： H01L21/67109 , F28D15/02 , F28D15/06 , F28D2021/0077 , F28F13/14 , F28F13/185
摘要： A method and apparatus for heating a substrate is provided herein. In one embodiment, a substrate heater includes a vessel having an upper member including a top surface for supporting a substrate thereon; a liquid disposed within and partially filling the vessel; and a heat source for providing sufficient heat to the liquid to boil the liquid. Optionally, a pressure controller for regulating the pressure within the vessel may be provided. The substrate is heated by first placing the substrate on the support surface of the vessel of the substrate heater. The liquid contained in the vessel is then boiled. As the liquid is boiling, a uniform film of heated condensation is deposited on a bottom side of the support surface. The heated condensation heats the support surface which in turn, heats the substrate.
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