公开(公告)号：US08507383B2

公开(公告)日：2013-08-13

申请号：US13012879

申请日：2011-01-25

Applicant: Takashi Ando ,  Leslie Charns ,  Jason E. Cummings ,  Lukasz J. Hupka ,  Dinesh R. Koli ,  Tomohisa Konno ,  Mahadevaiyer Krishnan ,  Michael F. Lofaro ,  Jakub W. Nalaskowski ,  Masahiro Noda ,  Dinesh K. Penigalapati ,  Tatsuya Yamanaka

Inventor： Takashi Ando ,  Leslie Charns ,  Jason E. Cummings ,  Lukasz J. Hupka ,  Dinesh R. Koli ,  Tomohisa Konno ,  Mahadevaiyer Krishnan ,  Michael F. Lofaro ,  Jakub W. Nalaskowski ,  Masahiro Noda ,  Dinesh K. Penigalapati ,  Tatsuya Yamanaka

IPC: H01L21/302 ,  C03C15/00 ,  C23F1/00

CPC classification number: H01L21/31053 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545

Abstract: Methods for polishing multiple dielectric layers to form replacement metal gate structures include a first chemical mechanical polish step to remove overburden and planarize a top layer to leave a planarized thickness over a gate structure. A second chemical mechanical polish step includes removal of the thickness to expose an underlying covered surface of a dielectric of the gate structure with a slurry configured to polish the top layer and the underlying covered surface substantially equally to accomplish a planar topography. A third chemical mechanical polish step is employed to remove the dielectric of the gate structure and expose a gate conductor.

Abstract translation: 用于抛光多个电介质层以形成替换金属栅极结构的方法包括第一化学机械抛光步骤，以去除覆盖层并平坦化顶层以在栅极结构上留下平坦化的厚度。 第二化学机械抛光步骤包括去除厚度以暴露栅极结构的电介质的下面覆盖的表面，其中浆料被配置成基本上等同地抛光顶层和下面的被覆表面以实现平面形貌。 采用第三种化学机械抛光步骤来去除栅极结构的电介质并露出栅极导体。

公开(公告)号：US08497210B2

公开(公告)日：2013-07-30

申请号：US13012142

申请日：2011-01-24

Applicant: Leslie Charns ,  Jason E. Cummings ,  Lukasz J. Hupka ,  Dinesh R. Koli ,  Tomohisa Konno ,  Mahadevaiyer Krishnan ,  Michael F. Lofaro ,  Jakub W. Nalaskowski ,  Masahiro Noda ,  Dinesh K. Penigalapati ,  Tatsuya Yamanaka

Inventor： Leslie Charns ,  Jason E. Cummings ,  Lukasz J. Hupka ,  Dinesh R. Koli ,  Tomohisa Konno ,  Mahadevaiyer Krishnan ,  Michael F. Lofaro ,  Jakub W. Nalaskowski ,  Masahiro Noda ,  Dinesh K. Penigalapati ,  Tatsuya Yamanaka

IPC: H01L21/302

CPC classification number: H01L21/31053 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545

Abstract: A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface.

Abstract translation: 抛光方法包括在第一抛光剂中抛光晶片以去除覆盖层并平坦化顶层，留下保留在下层上的部分。 第二抛光步骤包括两个阶段。 在第一阶段中，去除顶层并暴露下层，其顶层至基层选择性为约1:1至约2:1，以提供平面形貌。 在第二阶段中，顶层的残余部分从下层的顶部去除，以确保下层的表面完全曝光。

公开(公告)号：US20120083123A1

公开(公告)日：2012-04-05

申请号：US13012836

申请日：2011-01-25

Applicant: Josephine B. Chang ,  Leslie Charns ,  Jason E. Cummings ,  Michael A. Guillorn ,  Lukasz J. Hupka ,  Dinesh R. Koli ,  Tomohisa Konno ,  Mahadevaiyer Krishnan ,  Michael F. Lofaro ,  Jakub W. Nalaskowski ,  Masahiro Noda ,  Dinesh K. Penigalapati ,  Tatsuya Yamanaka

Inventor： Josephine B. Chang ,  Leslie Charns ,  Jason E. Cummings ,  Michael A. Guillorn ,  Lukasz J. Hupka ,  Dinesh R. Koli ,  Tomohisa Konno ,  Mahadevaiyer Krishnan ,  Michael F. Lofaro ,  Jakub W. Nalaskowski ,  Masahiro Noda ,  Dinesh K. Penigalapati ,  Tatsuya Yamanaka

IPC: H01L21/306

CPC classification number: H01L21/31053 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545

Abstract: A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography.

Abstract translation: 平面化方法包括在第一化学机械抛光步骤中平坦化半导体晶片以去除覆盖层并平坦化顶层，从而在顶层之上留下厚度的顶层材料。 顶层材料在第二化学机械抛光步骤中被平坦化，以进一步去除顶层并暴露第二材料和第三材料的下层，使得顶层材料对第二材料对第三材料的选择性在 约1：1至约2：1：1，以提供平面形貌。

公开(公告)号：US20120083122A1

公开(公告)日：2012-04-05

申请号：US13012142

申请日：2011-01-24

Applicant: Leslie Charns ,  Jason E. Cummings ,  Lukasz J. Hupka ,  Dinesh R. Koli ,  Tomohisa Konno ,  Mahadevaiyer Krishnan ,  Michael F. Lofaro ,  Jakub W. Nalaskowski ,  Masahiro Noda ,  Dinesh K. Penigalapati ,  Tatsuya Yamanaka

Inventor： Leslie Charns ,  Jason E. Cummings ,  Lukasz J. Hupka ,  Dinesh R. Koli ,  Tomohisa Konno ,  Mahadevaiyer Krishnan ,  Michael F. Lofaro ,  Jakub W. Nalaskowski ,  Masahiro Noda ,  Dinesh K. Penigalapati ,  Tatsuya Yamanaka

IPC: H01L21/306

CPC classification number: H01L21/31053 ,  H01L29/517 ,  H01L29/6653 ,  H01L29/66545

Abstract: A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface.

Abstract translation: 抛光方法包括在第一抛光剂中抛光晶片以去除覆盖层并平坦化顶层，留下保留在下层上的部分。 第二抛光步骤包括两个阶段。 在第一阶段中，去除顶层并暴露下层，其顶层至基层选择性为约1:1至约2:1，以提供平面形貌。 在第二阶段中，顶层的残余部分从下层的顶部去除，以确保下层的表面完全曝光。

公开(公告)号：US07556860B2

公开(公告)日：2009-07-07

申请号：US11410895

申请日：2006-04-26

Applicant: Masahiro Akiyama ,  Seitaro Hattori ,  Takahiko Kurosawa ,  Manabu Sekiguchi ,  Terukazu Kokubo ,  Michihiro Mita ,  Tatsuya Yamanaka ,  Masaki Obi

Inventor： Masahiro Akiyama ,  Seitaro Hattori ,  Takahiko Kurosawa ,  Manabu Sekiguchi ,  Terukazu Kokubo ,  Michihiro Mita ,  Tatsuya Yamanaka ,  Masaki Obi

IPC: B32B9/04 ,  B32B27/00 ,  C08L83/04

CPC classification number: H01L21/02118 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/1014 ,  Y10T428/31663

Abstract: A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.

Abstract translation: 一种层压体，包括：第一二氧化硅基膜; 第二硅胶膜; 和有机膜，其中所述第二二氧化硅基膜包括含有碳 - 碳双键或碳 - 碳三键的有机基团。 形成层压体的方法包括：在基材上形成用于第一二氧化硅基膜的第一涂层; 在第一涂层上形成第二二氧化硅基膜的第二涂层，第二涂层包括含有碳 - 碳双键或碳 - 碳三键的有机基团; 在第二涂层上形成用于有机膜的第三涂层; 以及固化包括第一至第三涂层的多层膜。

公开(公告)号：US20130017001A1

公开(公告)日：2013-01-17

申请号：US13545434

申请日：2012-07-10

Applicant: Tatsuya Yamanaka

Inventor： Tatsuya Yamanaka

IPC: G03G15/08

CPC classification number: G03G15/0879

Abstract: A toner replenishing device includes a toner conveying portion, a conveying member, a toner loosening member and a swinging member. The toner conveying portion has a vertical conveying portion for vertically conveying toner, and a horizontal conveying portion for horizontally conveying the toner. The conveying member is disposed in the horizontal conveying portion, and has a shaft member and a projecting portion formed around the shaft member. The toner loosening member is disposed in the vertical conveying portion to be swingable up and down. The swinging member is contactable with the conveying member and the toner loosening member. The swinging member swings up and down by a change in a contact portion with respect to the conveying member between the shaft member and the projecting portion, as the conveying member rotates. The toner loosening member swings up and down as the swinging member swings.

Abstract translation: 调色剂补充装置包括调色剂传送部分，传送部件，调色剂松开部件和摆动部件。 调色剂传送部分具有用于垂直传送调色剂的垂直传送部分和用于水平传送调色剂的水平传送部分。 输送构件设置在水平输送部中，并且具有轴构件和形成在轴构件周围的突出部。 调色剂松动构件设置在垂直传送部分中以便可上下摆动。 摆动构件可与输送构件和调色剂松开构件接触。 随着输送构件转动，摆动构件通过相对于轴构件和突出部分之间的输送构件的接触部分的变化而上下摆动。 当摆动构件摆动时，调色剂松开构件上下摆动。

公开(公告)号：US08268403B2

公开(公告)日：2012-09-18

申请号：US11596295

申请日：2005-04-28

Applicant: Masahiro Akiyama ,  Hisashi Nakagawa ,  Tatsuya Yamanaka ,  Atsushi Shiota ,  Takahiko Kurosawa

Inventor： Masahiro Akiyama ,  Hisashi Nakagawa ,  Tatsuya Yamanaka ,  Atsushi Shiota ,  Takahiko Kurosawa

IPC: B05D3/02

CPC classification number: H01L21/31058 ,  C08G77/60 ,  C08J3/28 ,  C08J2383/04 ,  C08J2383/16 ,  C08L83/04 ,  C08L83/14 ,  C09D183/14 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31633 ,  Y10T428/265 ,  Y10T428/31663 ,  C08L83/00

Abstract: A method of forming an organic silica film includes forming a coating including a silicon compound having an —Si—O—Si— structure and an —Si—CH2—Si— structure on a substrate, heating the coating, and curing the coating by applying ultraviolet radiation.

Abstract translation: 形成有机二氧化硅膜的方法包括在基材上形成包含具有-Si-O-Si-结构和-Si-CH2-Si-结构的硅化合物的涂层，加热涂层，并通过涂覆固化涂层 紫外线辐射。

公开(公告)号：US20120163858A1

公开(公告)日：2012-06-28

申请号：US13337586

申请日：2011-12-27

Applicant: Hirokazu FUJII ,  Daijiro UENO ,  Hiroki TAKAHASHI ,  Tatsuya YAMANAKA

Inventor： Hirokazu FUJII ,  Daijiro UENO ,  Hiroki TAKAHASHI ,  Tatsuya YAMANAKA

IPC: G03G15/00

CPC classification number: G03G21/1633 ,  G03G21/105 ,  G03G21/12 ,  G03G21/1647 ,  G03G21/1671 ,  G03G21/1842 ,  G03G2221/1654

Abstract: What is provided is an image formation apparatus including: an image formation part provided inside a main body so that the image formation part may be attached to the main body and detached from the main body; a plurality of opening-closing parts which may be opened and closed to attach the image formation part to the main body or detach the image formation part from the main body; and a plurality of locking parts latching each of the plurality of opening-closing parts to the main body, wherein when one of the plurality of locking parts undergoes a releasing operation, an other one of the plurality of locking parts also undergoes a releasing operation.

Abstract translation: 提供的图像形成装置包括：图像形成部，其设置在主体内部，使得图像形成部可以附接到主体并从主体分离; 可以打开和关闭多个打开 - 关闭部分，以将图像形成部分附接到主体或将图像形成部分从主体拆下; 以及多个锁定部件，其将所述多个打开 - 关闭部件中的每一个锁定到所述主体，其中当所述多个锁定部件中的一个处于释放操作时，所述多个锁定部件中的另一个也经历释放操作。

公开(公告)号：US08787795B2

公开(公告)日：2014-07-22

申请号：US13337586

申请日：2011-12-27

Applicant: Hirokazu Fujii ,  Daijiro Ueno ,  Hiroki Takahashi ,  Tatsuya Yamanaka

Inventor： Hirokazu Fujii ,  Daijiro Ueno ,  Hiroki Takahashi ,  Tatsuya Yamanaka

IPC: G03G15/00

CPC classification number: G03G21/1633 ,  G03G21/105 ,  G03G21/12 ,  G03G21/1647 ,  G03G21/1671 ,  G03G21/1842 ,  G03G2221/1654

Abstract: What is provided is an image formation apparatus including: an image formation part provided inside a main body so that the image formation part may be attached to the main body and detached from the main body; a plurality of opening-closing parts which may be opened and closed to attach the image formation part to the main body or detach the image formation part from the main body; and a plurality of locking parts latching each of the plurality of opening-closing parts to the main body, wherein when one of the plurality of locking parts undergoes a releasing operation, an other one of the plurality of locking parts also undergoes a releasing operation.

Abstract translation: 提供的图像形成装置包括：图像形成部，其设置在主体内部，使得图像形成部可以附接到主体并从主体分离; 可以打开和关闭多个打开 - 关闭部分，以将图像形成部分附接到主体或将图像形成部分从主体拆下; 以及多个锁定部件，其将所述多个打开 - 关闭部件中的每一个锁定到所述主体，其中当所述多个锁定部件中的一个处于释放操作时，所述多个锁定部件中的另一个也经历释放操作。

公开(公告)号：US20100007025A1

公开(公告)日：2010-01-14

申请号：US12278224

申请日：2007-01-31

Applicant: Hisashi Nakagawa ,  Tatsuya Yamanaka ,  Masahiro Akiyama ,  Terukazu Kokubo ,  Youhei Nobe

Inventor： Hisashi Nakagawa ,  Tatsuya Yamanaka ,  Masahiro Akiyama ,  Terukazu Kokubo ,  Youhei Nobe

IPC: H01L21/31 ,  H01L23/48 ,  C08G77/04

CPC classification number: C09D183/04 ,  C08G77/60 ,  C09D183/14 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3122 ,  H01L21/316 ,  C08L83/00

Abstract: An insulating-film-forming composition for a semiconductor device comprising an organic silica sol with a carbon atom content of 11 to 17 atom % and an organic solvent is disclosed. The organic silica sol comprises a hydrolysis-condensation product P1 and a hydrolysis-condensation product P2. The hydrolysis-condensation product P1 is obtained by hydrolyzing and condensing (A) a silane monomer comprising a hydrolyzable group and (B) a polycarbosilane comprising a hydrolyzable group in the presence of (C) a basic catalyst, and the hydrolysis-condensation product P2 is obtained by hydrolyzing and condensing (D) a silane monomer comprising a hydrolyzable group.

Abstract translation: 公开了一种用于半导体器件的绝缘膜形成组合物，其包含碳原子数为11至17原子％的有机硅溶胶和有机溶剂。 有机硅溶胶包括水解缩合产物P1和水解缩合产物P2。 水解缩合产物P1是通过在（C）碱性催化剂存在下（A）包含可水解基团的硅烷单体和（B）包含可水解基团的聚碳硅烷（A）和水解缩合产物P2 是通过水解和冷凝（D）包含可水解基团的硅烷单体获得的。