公开(公告)号：US20250167040A1

公开(公告)日：2025-05-22

申请号：US18945835

申请日：2024-11-13

Applicant: Tokyo Electron Limited

Inventor： Manabu HONMA

IPC: H01L21/687 ,  B25J19/00

Abstract: A lifting mechanism for raising or lowering a substrate holder configured to hold a plurality of substrates in a shelf-like manner, includes a support configured to support the substrate holder, and a multi-joint arm having a tip connected to the support to raise or lower the support.

公开(公告)号：US20250167024A1

公开(公告)日：2025-05-22

申请号：US18511557

申请日：2023-11-16

Applicant: Tokyo Electron Limited

Inventor： Daniel FULFORD ,  Mark I. GARDNER ,  H. Jim FULFORD

IPC: H01L21/67 ,  G01B21/20 ,  H01L21/66

Abstract: A wafer measurement stage for supporting a semiconductor wafer for surface geometry measurements. The wafer measurement stage includes a support body having a planar surface configured to face a wafer which is supported by the wafer measurement stage, and a wafer contact structure provided on the planar surface. The wafer contact structure is configured to contact a portion of a wafer such that the wafer is supported in an elevated position relative to the planar surface and to control gravity effects at non-contact portions of the wafer.

公开(公告)号：US20250164410A1

公开(公告)日：2025-05-22

申请号：US18517486

申请日：2023-11-22

Applicant: Tokyo Electron Limited

Inventor： Holger Tuitje ,  Xinkang Tian ,  Ching Ling Meng

IPC: G01N21/95 ,  G01N21/93 ,  G01N21/956 ,  H01L21/66

Abstract: A method for monitoring a plurality of process chambers, the method includes generating an optical beam at a light source. The method further includes dividing the optical beam into a plurality of light beams. The method further includes providing the plurality of light beams to the plurality of process chambers. And the method further includes measuring the plurality of light beams after being reflected within the plurality of process chambers.

公开(公告)号：US20250161979A1

公开(公告)日：2025-05-22

申请号：US19033032

申请日：2025-01-21

Applicant: Tokyo Electron Limited

Inventor： Yusaku HASHIMOTO ,  Kodai YAGI ,  Yuki MATSUTAKE

IPC: B05D3/04 ,  H01L21/02 ,  H01L21/027

Abstract: A coating film forming method includes coating a coating liquid by supplying the same to a front surface of a substrate and rotating the substrate to form a coating film, supplying a high-temperature gas having a temperature higher than the substrate to an exposed region of a rear surface of the substrate, adjusting film thickness distribution of the coating film in a plane of the substrate by rotating the substrate at a first rotation speed, and drying, after the adjusting the film thickness distribution, the coating film by adjusting the film thickness of the coating film in an entire plane of the substrate by rotating the substrate at a second rotation speed different from the first rotation speed. A period in which the drying of the coating film is performed includes a period in which the supplying of the high-temperature gas to the substrate is stopped.

公开(公告)号：US20250155879A1

公开(公告)日：2025-05-15

申请号：US18389207

申请日：2023-11-13

Applicant: Tokyo Electron Limited

Inventor： Sergey AVERKIN ,  Pingshan LUAN ,  Toru HISAMATSU

IPC: G05B19/418 ,  G06F16/33

Abstract: Systems and methods for process development assistance are disclosed. A system includes one or more processors and memory. The system receives a scorecard including a set of criteria for fabricating a semiconductor device. The system obtains, based on the scorecard, a set of recipes stored in a knowledge base. The system obtains a set of feature dimensions associated with the set of recipes. The system obtains, using an analytic hierarchy process on the set of feature dimensions, the set of criteria, and weights of the set of criteria, an objective function value of each of the set of recipes. The system selects a subset of recipes according to the objective function value of each of the set of recipes. The system generates at least one recipe according to the selected subset of recipes and the objective function value. The system displays, via a display device, the at least one recipe.

公开(公告)号：US20250154645A1

公开(公告)日：2025-05-15

申请号：US18838661

申请日：2023-02-06

Applicant: Tokyo Electron Limited

Inventor： Tadashi MITSUNARI ,  Hiroki ARAI ,  Yuutaro KISHI ,  Yasuhiro HAMADA

IPC: C23C16/26 ,  C23C16/509 ,  H01J37/32 ,  H01L21/02

Abstract: A film forming method includes placing a substrate on a substrate placement stage provided inside a processing container, exhausting and depressurizing an inside of the processing container, forming a carbon film on the substrate by generating plasma through application of radio frequency power for plasma generation to the substrate placement stage while supplying a process gas including a carbon-containing gas into the depressurized processing container, and performing plasma processing by applying a negative direct current voltage to a counter electrode facing the substrate placement stage, along with application of the radio frequency power for plasma generation to the substrate placement stage.

公开(公告)号：US20250154643A1

公开(公告)日：2025-05-15

申请号：US18937950

申请日：2024-11-05

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  Ryota Yonezawa ,  Yuji Otsuki ,  Hidenao Suzuki ,  Robert D. Clark ,  Gyanaranjan Pattanaik

IPC: C23C16/04 ,  C23C16/16 ,  C23C16/455 ,  H01L21/768

Abstract: Method for area selective deposition (ASD) on a substrate containing a growth surface that is exposed and a non-growth surface that is exposed. The method includes cyclical exposures of a deposition gas containing a metal carbonyl precursor, the metal carbonyl precursor decomposing on the growth surface such that a metal film is deposited on the growth surface and carbon monoxide (CO) gas is released, and an inhibitor gas after stopping the flow of the deposition gas to the substrate. The cycling between flowing the deposition gas to the substrate and flowing the inhibitor gas to the substrate is repeated to selectively form the metal film on the growth surface relative to the non-growth surface, where the inhibitor gas increases the selectivity of the metal film formed on the growth surface when compared to the selectivity of the metal film formed on the growth surface without the inhibitor gas.

公开(公告)号：US20250153278A1

公开(公告)日：2025-05-15

申请号：US18839180

申请日：2023-01-23

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA

IPC: B23K26/53 ,  B23K26/03 ,  B23K26/042 ,  B23K101/40

Abstract: A processing method of a combined substrate in which a first substrate and a second substrate are bonded to each other includes acquiring an eccentric amount between the first substrate and the second substrate; forming, by radiating internal laser light along a boundary between a peripheral portion of the first substrate and a central portion of the first substrate, a peripheral modification layer serving as a starting point of separation of the peripheral portion; and removing the peripheral portion starting from the peripheral modification layer. In the forming of the peripheral modification layer, an irradiation position of the internal laser light is determined based on the eccentric amount.

公开(公告)号：US20250153272A1

公开(公告)日：2025-05-15

申请号：US18833922

申请日：2023-01-11

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA

IPC: B23K26/0622 ,  B23K26/06 ,  B23K26/067 ,  B23K26/082 ,  B23K101/40 ,  G02B27/28 ,  H01L21/67

Abstract: A substrate processing method of processing a substrate includes radiating multiple branch laser lights, which are obtained by branching laser light from a laser head, in a pulse shape in an outer peripheral region of the substrate; and radiating single laser light, which is obtained by not branching the laser light, in a pulse shape in a central region diametrically inside the outer peripheral region. A substrate processing apparatus configured to process the substrate includes a substrate holder configured to hold the substrate; a laser radiation device configured to radiate the laser light to the substrate held by the substrate holder; and a controller. The laser radiation device includes the laser head configured to oscillate the laser light; and an optical system configured to branch the laser light from the laser head.

公开(公告)号：US12300525B2

公开(公告)日：2025-05-13

申请号：US17581248

申请日：2022-01-21

Applicant: Tokyo Electron Limited

Inventor： Hiroto Sato ,  Takahiro Miki ,  Mitsuru Obara

IPC: H01L21/67 ,  G05D7/06

Abstract: A controlling method according to an aspect of the present disclosure includes a first chamber provided with a fan, a second chamber to which a replacement gas is sent from the first chamber by the fan and which includes a transporter configured to transport a substrate, a circulation line configured to communicate the first chamber and the second chamber with each other and circulate the replacement gas, and a valve provided in the circulation line. The method includes replacing an inside of the first chamber and an inside of the second chamber with the replacement gas by turning off the fan and closing the valve, and circulating the replacement gas through the circulation line by turning on the fan and opening the valve. The replacing includes controlling the fan to be turned on and the valve to be opened for a predetermined period of time.