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公开(公告)号：US5540772A
公开(公告)日：1996-07-30
申请号：US320218
申请日：1994-10-11
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/115 , H01L41/24 , H05K3/10 , C23C14/00
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/409 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1287 , C23C18/1295 , C23C18/14 , C23C26/02 , C30B29/68 , C30B7/00 , H01L21/314 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/314 , H01L28/55 , H05K3/105 , Y10S427/101
摘要： A method and apparatus are disclosed for forming thin films of chemical compounds utilized in integrated circuits. The method includes steps of forming a precursor liquid comprising a chemical compound in a solvent, providing a substrate within a vacuum deposition chamber, producing a mist of the precursor liquid, and flowing the mist into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried to form a thin film of a solid material on the substrate, then the integrated circuit is completed to include at least a portion of the film of solid material in a component of the integrated circuit.
摘要翻译： 公开了用于形成集成电路中使用的化学化合物的薄膜的方法和装置。 该方法包括以下步骤：在溶剂中形成包含化合物的前体液体，在真空沉积室内提供基底，产生前体液体的雾，并将雾流入沉积室，同时将室保持在室温至 在衬底上沉积一层前体液体。 将液体干燥以在基板上形成固体材料的薄膜，然后完成集成电路以将集成电路的部件中的固体材料膜的至少一部分包括在内。
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公开(公告)号：US5456945A
公开(公告)日：1995-10-10
申请号：US993380
申请日：1992-12-18
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/115 , H01L41/24 , H05K3/10 , H01L21/00
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/409 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1287 , C23C18/1295 , C23C18/14 , C23C26/02 , C30B29/68 , C30B7/00 , H01L21/314 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/314 , H01L28/55 , H05K3/105 , Y10S427/101
摘要： A method and apparatus are disclosed for forming thin films of chemical compounds utilized in integrated circuits. The method includes steps of forming a precursor liquid comprising a chemical compound in a solvent, providing a substrate within a vacuum deposition chamber, producing a mist of the precursor liquid, and flowing the mist into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried to form a thin film of a solid material on the substrate, then the integrated circuit is completed to include at least a portion of the film of solid material in a component of the integrated circuit.
摘要翻译： 公开了用于形成集成电路中使用的化学化合物的薄膜的方法和装置。 该方法包括以下步骤：在溶剂中形成包含化合物的前体液体，在真空沉积室内提供基底，产生前体液体的雾，并将雾流入沉积室，同时将室保持在室温至 在衬底上沉积一层前体液体。 将液体干燥以在基板上形成固体材料的薄膜，然后完成集成电路以将集成电路的部件中的固体材料膜的至少一部分包括在内。
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公开(公告)号：US5888583A
公开(公告)日：1999-03-30
申请号：US376429
申请日：1995-01-23
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/40 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/115 , H01L41/24 , H05K3/10 , B05D5/12 , C23C16/00
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/409 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1287 , C23C18/1295 , C23C18/14 , C23C26/02 , C30B29/68 , C30B7/00 , H01L21/314 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/314 , H01L28/55 , H05K3/105 , Y10S427/101
摘要： A method and apparatus are disclosed for forming thin films of chemical compounds utilized in integrated circuits. The method includes steps forming a precursor liquid comprising a chemical compound in a solvent, providing a substrate within a vacuum deposition chamber, producing a mist of the precursor liquid, and flowing the mist into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried to form a thin film of a solid material on the substrate, then the integrated circuit is completed to include at least a portion of the film of solid material in a component of the integrated circuit.
摘要翻译： 公开了用于形成集成电路中使用的化学化合物的薄膜的方法和装置。 该方法包括在溶剂中形成包含化合物的前体液体的步骤，在真空沉积室内提供衬底，产生前体液体的雾，并将雾流入沉积室，同时将室保持在环境温度以沉积 衬底上的前体液体层。 将液体干燥以在基板上形成固体材料的薄膜，然后完成集成电路以将集成电路的部件中的固体材料膜的至少一部分包括在内。
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