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    Process for producing a single crystal
    1.
    发明授权
    Process for producing a single crystal 失效
    单晶生产工艺

    公开(公告)号：US06228164B1

    公开(公告)日：2001-05-08

    申请号：US09318659

    申请日：1999-05-25

    申请人： Wilfried von Ammon ,  Rüdiger Schmolke ,  Dieter Gräf ,  Ulrich Lambert

    发明人： Wilfried von Ammon ,  Rüdiger Schmolke ,  Dieter Gräf ,  Ulrich Lambert

    IPC分类号： C30B2906

    CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206

    摘要： A process for producing a silicon single crystal has the crystal being pulled using the Czochralski method while being doped with oxygen and nitrogen. The single crystal is doped with oxygen at a concentration of less than 6.5*1017 atoms cm−3 and with nitrogen at a concentration of more than 5*1013 atoms cm−3 while the single crystal is being pulled. Another process is for producing a single crystal from a silicon melt, in which the single crystal is doped with nitrogen and the single crystal is pulled at a rate V, an axial temperature gradient G(r) being set up at the interface of the single crystal and the melt, in which the ratio V/G(r) in the radial direction is at least partially less than 1.3*10−3cm2min−1 K−1.

    摘要翻译： 一种制造硅单晶的方法，在掺杂氧和氮的同时，使用Czochralski法拉伸晶体。 单晶掺杂浓度小于6.5×1017原子cm-3的氧，浓度大于5×1013原子cm-3的氮，同时拉伸单晶。 另一种方法是从硅熔体制造单晶，其中单晶掺杂有氮，单晶以速率V被拉动，轴向温度梯度G（r）被设置在单晶的界面处 晶体和熔体，其中径向方向上的比率V / G（r）至少部分地小于1.3×10-3cm2min-1K-1。

    Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties
    2.
    发明授权
    Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties 有权
    具有限定缺陷特性的硅半导体晶片的制造方法以及具有这些缺陷特性的硅半导体晶片

    公开(公告)号：US07387676B2

    公开(公告)日：2008-06-17

    申请号：US11452870

    申请日：2006-06-14

    申请人： Wilfried von Ammon ,  Walter Haeckl ,  Andreas Huber ,  Ulrich Lambert

    发明人： Wilfried von Ammon ,  Walter Haeckl ,  Andreas Huber ,  Ulrich Lambert

    IPC分类号： C30B15/00

    CPC分类号： C30B15/203 ,  C30B29/06

    摘要： In a process for producing silicon semiconductor wafers, a silicon single crystal is pulled using the Czochralski method and is processed to form semiconductor wafers, a ratio V/G of pulling rate V and axial temperature gradient G at a growth front during the pulling of the single crystal being controlled in such a manner that agglomerated vacancy defects above a critical size are formed in the single crystal, the agglomerated vacancy defects, in a region of the semiconductor wafer that is of relevance to electronic components, shrinking during production of the components such that the size in this region no longer exceeds the critical size. Silicon semiconductor wafers with agglomerated vacancy defects in the relevant device region preferably contain agglomerated vacancy defects having an inner surface which is at least partially free of an oxide layer and a size of less than 50 nm.

    摘要翻译： 在制造硅半导体晶片的工艺中，使用切克劳斯基法（Czochralski method）拉制硅单晶，并且在拉伸期间处理以形成半导体晶片，拉伸速率V与生长前沿的轴向温度梯度G的比值V / G 控制单晶的方式是在单晶中形成高于临界尺寸的聚集空位缺陷，在与电子部件相关的半导体晶片的区域中的聚集空位缺陷在组件的制造过程中收缩 该区域的尺寸不再超过临界尺寸。 在相关器件区域中具有团聚空位缺陷的硅半导体晶片优选地含有具有至少部分不含氧化物层和小于50nm的尺寸的内表面的附聚空位缺陷。

    Epitaxial wafer and production method thereof
    3.
    发明授权
    Epitaxial wafer and production method thereof 有权
    外延晶片及其制造方法

    公开(公告)号：US08241421B2

    公开(公告)日：2012-08-14

    申请号：US12895950

    申请日：2010-10-01

    申请人： Katsuhiko Nakai ,  Timo Mueller ,  Atsushi Ikari ,  Wilfried von Ammon ,  Martin Weber

    发明人： Katsuhiko Nakai ,  Timo Mueller ,  Atsushi Ikari ,  Wilfried von Ammon ,  Martin Weber

    IPC分类号： H01L21/00

    CPC分类号： C30B29/06 ,  C30B15/02 ,  C30B15/04 ,  C30B15/20 ,  C30B15/206 ,  Y10T428/12528

    摘要： The epitaxial layer defects generated from voids of a silicon substrate wafer containing added hydrogen are suppressed by a method for producing an epitaxial wafer by: growing a silicon crystal by the Czochralski method comprising adding hydrogen and nitrogen to a silicon melt and growing from the silicon melt a silicon crystal having a nitrogen concentration of from 3×1013 cm−3 to 3×1014 cm−3, preparing a silicon substrate by machining the silicon crystal, and forming an epitaxial layer at the surface of the silicon substrate.

    摘要翻译： 由含有加氢的硅衬底晶片的空隙产生的外延层缺陷通过以下方式制造外延晶片的方法被抑制：通过切克劳斯基法生长硅晶体，包括向硅熔体中加入氢和氮，并从硅熔体 氮浓度为3×1013cm-3至3×1014cm-3的硅晶体，通过加工硅晶体制备硅衬底，并在硅衬底的表面形成外延层。

    Process and apparatus for producing a single crystal of semiconductor material
    4.
    发明授权
    Process and apparatus for producing a single crystal of semiconductor material 有权
    用于制造半导体材料的单晶的工艺和设备

    公开(公告)号：US08221550B2

    公开(公告)日：2012-07-17

    申请号：US12640755

    申请日：2009-12-17

    申请人： Wilfried von Ammon

    发明人： Wilfried von Ammon

    IPC分类号： C30B35/00

    CPC分类号： C30B29/06 ,  C30B13/08 ,  C30B13/10 ,  C30B13/14 ,  C30B13/16 ,  C30B13/30 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068

    摘要： A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which Is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt.

    摘要翻译： 一种制造半导体材料的单晶的方法，其中熔体的一部分通过拉线圈保持液态，在晶种上固化以形成生长的单晶，并且将颗粒熔化以保持生长 的单晶。 熔化的颗粒在延迟后通入熔体。 还有一种适用于进行该方法并具有延迟熔融颗粒和熔体混合的装置。

    Silicon Wafer and Method For Producing It
    5.
    发明申请
    Silicon Wafer and Method For Producing It 有权
    硅晶片及其生产方法

    公开(公告)号：US20120039786A1

    公开(公告)日：2012-02-16

    申请号：US13191534

    申请日：2011-07-27

    申请人： Wilfried von Ammon ,  Gudrun Kissinger ,  Dawid Kot

    发明人： Wilfried von Ammon ,  Gudrun Kissinger ,  Dawid Kot

    IPC分类号： C01B33/02 ,  F24J3/00

    CPC分类号： H01L21/3225 ,  C30B29/06 ,  C30B33/02

    摘要： Silicon wafers having an oxygen concentration of 5·1017 to 7.5·1017 cm−3 have the following BMD densities after the following thermal processes, carried out alternatively: a BMD density of at most 1·108 cm−3 after a treatment for three hours at 780° C. and subsequently for 16 hours at 1000° C., and a BMD density of at least 1·109 cm−3 after heating of the silicon wafer at a heating rate of 1 K/min from a start temperature of 500° C. to a target temperature of 1000° C. and subsequent holding at 1000° C. for 16 hours. The wafers are prepared by a method of irradiation of a heated wafer with flashlamp which delivers energy which is from 50 to 100% of the energy density necessary for melting the wafer surface.

    摘要翻译： 氧化浓度为5×1017〜7.5×1017cm-3的硅片在以下热处理后具有以下BMD密度：交替进行处理3小时后的至少1×10 8 cm -3的BMD密度 在780℃下，随后在1000℃下进行16小时，并且从起始温度500℃以1K /分钟的加热速率加热硅晶片之后，BMD密度为至少1×10 9 cm -3。 ℃至目标温度为1000℃，随后在1000℃下保持16小时。 通过用闪光灯照射加热的晶片的方法制备晶片，其传递能量，其是熔化晶片表面所需的能量密度的50至100％。

    Semiconductor wafers of silicon and method for their production
    6.
    发明授权
    Semiconductor wafers of silicon and method for their production 有权
    硅半导体晶圆及其生产方法

    公开(公告)号：US08043427B2

    公开(公告)日：2011-10-25

    申请号：US12011713

    申请日：2008-01-29

    申请人： Andreas Sattler ,  Wilfried von Ammon ,  Martin Weber ,  Walter Haeckl ,  Herbert Schmidt

    发明人： Andreas Sattler ,  Wilfried von Ammon ,  Martin Weber ,  Walter Haeckl ,  Herbert Schmidt

    IPC分类号： C30B15/22

    CPC分类号： C30B29/06 ,  C30B15/203

    摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.

    摘要翻译： 硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且 控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。 控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。 本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。