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    Process for producing a silicon single crystal which is doped with highly volatile foreign substances
    1.
    发明申请
    Process for producing a silicon single crystal which is doped with highly volatile foreign substances 有权
    用于制造掺杂有高挥发性异物的硅单晶的方法

    公开(公告)号：US20040083947A1

    公开(公告)日：2004-05-06

    申请号：US10690415

    申请日：2003-10-21

    申请人： Wacker Siltronic AG

    发明人： Martin Weber ,  Peter Vilzmann ,  Erich Gmeilbauer ,  Robert Vorbuchner

    IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

    CPC分类号： C30B29/06 ,  C30B15/00

    摘要： A process for producing a silicon single crystal which is doped with highly volatile foreign substance by pulling the single crystal from a melt which is held under predetermined process conditions in a crucible. A quantity of the foreign substance N0 is added in order to achieve a desired resistance of the melt, and the melt, after a time t, is after-doped at least once with a quantity nullN(t) of the foreign substance, in order to compensate for losses caused by the foreign substance evaporating out of the melt. The quantity nullN(t) of the foreign substance is calculated according to the equationnullN(t)nullN0nullN(t)nullN0null(1nullenullnullanullt)or according to the approximation equationnullN(t)nullN0nullnullanulltwhere nulla is an evaporation coefficient which describes a process-specific evaporation behavior of the foreign substance and which is obtained after a resistance profile R(t) of a further single crystal has been measured and by calculation according to the equationR(t)nullR0nullenullanulltwhere R0 is a starting resistivity and the further single crystal is pulled under the predetermined process conditions without being after-doped with the foreign substance.

    摘要翻译： 一种通过从保持在坩埚中的预定工艺条件下的熔体拉出单晶而制造掺杂有高挥发性异物的硅单晶的方法。 加入一定量的异物N0以达到所需的熔体电阻，并且时间t之后的熔体按照外来物质量的DeltaN（t）按次序进行后掺杂至少一次 以补偿由熔体中蒸发的异物造成的损失。 根据等式DeltaN（t）= N0-N（t）= N0（1-e≠a），根据等式计算异物的量ΔN（t） 近似方程DeltaN（t）= N0.lambda.t其中λa是描述异物的工艺特定蒸发行为的蒸发系数，并且是在测量了另一单晶的电阻分布R（t）之后获得的 并且通过根据等式R（t）= R 0e <λ的计算，其中R 0是起始电阻率，并且在预定工艺条件下拉伸另外的单晶，而不用后掺杂 异物。

    Method and device for regulating the differential pressure in epitaxy reactors
    4.
    发明申请
    Method and device for regulating the differential pressure in epitaxy reactors 失效
    用于调节外延反应堆压差的方法和装置

    公开(公告)号：US20030140852A1

    公开(公告)日：2003-07-31

    申请号：US10330816

    申请日：2002-12-27

    申请人： Wacker Siltronic AG

    发明人： Anton Schatzeder ,  Georg Brenninger

    IPC分类号： C23C016/00

    CPC分类号： C30B25/14 ,  C23C16/4401 ,  C23C16/52

    摘要： A method and a device for regulating a pressure in an epitaxy reactor, wherein the epitaxy reactor has a wafer handling chamber WHC, a process chamber PC, and a gate valve GV connecting the two chambers. The wafer handling chamber is continuously purged with inert gas. The pressure difference between the wafer handling chamber and the process chamber is measured, and the resulting measurement signal is used in a control circuit to regulate the pressure in the wafer handling chamber. In this case the pressure in the wafer handling chamber is reduced if the pressure difference is above a predetermined value and the pressure in the wafer handling chamber is increased if the pressure difference is below a predetermined value. The predetermined pressure difference is defined as a pressure being between 5 and 500 PA. The WHC and the PC each have a gas discharge line and a gas input line. There is a differential pressure sensor for measuring the pressure difference between the chambers and control unit for regulating the pressure in the WHC.

    摘要翻译： 一种用于调节外延反应器中的压力的​​方法和装置，其中所述外延反应器具有晶片处理室WHC，处理室PC和连接两个室的闸阀GV。 晶圆处理室用惰性气体连续吹扫。 测量晶片处理室和处理室之间的压差，并将所得到的测量信号用于控制电路中以调节晶片处理室中的压力。 在这种情况下，如果压力差高于预定值，则晶片处理室中的压力降低，并且如果压力差低于预定值，则晶片处理室中的压力增加。 预定的压力差被定义为在5和500PA之间的压力。 WHC和PC各自具有气体排放管线和气体输入管线。 有一个差压传感器用于测量腔室和控制单元之间的压差，用于调节WHC中的压力。

    Device for holding a molten semiconductor material
    5.
    发明申请
    Device for holding a molten semiconductor material 审中-公开
    用于保持熔融半导体材料的装置

    公开(公告)号：US20030113488A1

    公开(公告)日：2003-06-19

    申请号：US10318712

    申请日：2002-12-13

    申请人： WACKER SILTRONIC AG

    发明人： Erich Tomzig

    IPC分类号： B32B001/02

    CPC分类号： C30B15/10 ,  C30B35/002 ,  Y10T428/131

    摘要： A device for holding a molten semiconductor material, includes a crucible made from quartz glass and a susceptor which at least partially comprises CFC and which supports the crucible and an inner surface having a base, a cylindrical section and a curved section between the base and the cylindrical section, and a thin, sheet-like and flexibly deformable graphite film which is arranged between the crucible and the susceptor and forms a gastight barrier.

    摘要翻译： 用于保持熔融半导体材料的装置包括由石英玻璃制成的坩埚和至少部分地包括CFC并且支撑坩埚的基座和具有基部的内表面，圆柱形部分和在基部和 圆柱形部分，以及设置在坩埚和基座之间并形成气密屏障的薄的片状且柔性可变形的石墨膜。

    Single crystal production method
    8.
    发明申请
    Single crystal production method 有权
    单晶生产方法

    公开(公告)号：US20030089301A1

    公开(公告)日：2003-05-15

    申请号：US10283683

    申请日：2002-10-30

    申请人： Wacker Siltronic AG

    发明人： Yutaka Kishida ,  Teruyuki Tamaki ,  Seiki Takebayashi ,  Wataru Ohashi

    IPC分类号： C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04

    CPC分类号： C30B29/06 ,  C30B15/30 ,  Y10T117/1068 ,  Y10T117/1072

    摘要： A single crystal production method based on the Czochralski method comprises controlling a number of crucible rotations and crystal rotations so that a number of vibrations for driving a melt, determined on the basis of the number of crucible and crystal rotations during a single crystal growing procedure, is outside a range from 95% to 105% of a number of sloshing resonance vibrations of the melt. In another embodiment, the method comprises controlling a number of rotations of a crystal and crucible, so that when a number of vibrations for driving a melt, determined by the number of crucible and crystal rotations during a single crystal growing procedure, is within a range from 95% to 105% of a number of sloshing resonance vibrations of the melt, the number of vibrations of the melt due to sloshing does not exceed 2000 times during a period when the number of vibrations is within that range.

    摘要翻译： 基于切克劳斯基法的单晶制造方法包括：控制多个坩埚旋转和晶体旋转，使得在单晶生长过程中，基于坩埚的数量和晶体旋转确定的用于驱动熔体的多个振动， 在熔融物的共振振动的数量的95％至105％的范围之外。 在另一个实施例中，该方法包括控制晶体和坩埚的旋转次数，使得当在单晶生长过程期间由坩埚的数量和晶体旋转确定的用于驱动熔体的多个振动在一定范围内 熔体共振振动数量的95％至105％时，在振动次数在该范围内的期间，由于晃动引起的熔体振动次数不超过2000次。

    Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor wafer
    9.
    发明申请
    Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor wafer 失效
    浮子区拉制半导体材料的掺杂半导体晶片，以及半导体晶片的制造工艺

    公开(公告)号：US20030192470A1

    公开(公告)日：2003-10-16

    申请号：US10410812

    申请日：2003-04-10

    申请人： Wacker Siltronic AG

    发明人： Rolf Knobel ,  Wilfried Von Ammon ,  Janis Virbulis ,  Manfred Grundner

    IPC分类号： C30B021/04 ,  C30B028/08 ,  C30B013/00

    CPC分类号： C30B29/06 ,  C30B13/10 ,  C30B13/26

    摘要： A doped semiconductor wafer of float zone-pulled semiconductor material contains a dopant added to a molten material and has a radial macroscopic resistance distribution of less than 12% and striations of null10% to null10%. There is also a process for producing a doped semiconductor wafer by float zone pulling of a single crystal and dividing up the single crystal, in which process, during the float zone pulling, a molten material which is produced using an induction coil is doped with a dopant. It is exposed to at least one rotating magnetic field and is solidified. The single crystal which is formed during the solidification of the molten material is rotated. The single crystal and the magnetic field are rotated with opposite directions of rotation and the magnetic field has a frequency of 400 to 700 Hz.

    摘要翻译： 浮动区域牵引半导体材料的掺杂半导体晶片包含添加到熔融材料中的掺杂剂，并且具有小于12％的径向宏观电阻分布和-10％至+ 10％的条纹。 还有一种用于通过浮选区域拉动单晶并分离单晶来制造掺杂半导体晶片的方法，在该过程中，在浮法区域拉伸期间，使用感应线圈产生的熔融材料掺杂有 掺杂剂。 暴露于至少一个旋转磁场并固化。 在熔融材料固化期间形成的单晶旋转。 单晶和磁场以相反的旋转方向旋转，磁场的频率为400至700Hz。

    Process and apparatus for producing a single crystal of semiconductor material
    10.
    发明申请
    Process and apparatus for producing a single crystal of semiconductor material 审中-公开
    用于制造半导体材料的单晶的工艺和设备

    公开(公告)号：US20030145781A1

    公开(公告)日：2003-08-07

    申请号：US10350570

    申请日：2003-01-24

    申请人： WACKER SILTRONIC AG

    发明人： Wilfried Von Ammon

    IPC分类号： C30B013/00 ,  C30B021/04 ,  C30B028/08

    CPC分类号： C30B29/06 ,  C30B13/08 ,  C30B13/10 ,  C30B13/14 ,  C30B13/16 ,  C30B13/30 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068

    摘要： A process for producing a single crystal of semiconductor material, in which fractions of a melt, are kept in liquid form by a pulling coil, solidify on a seed crystal to form the growing single crystal, and granules are melted in order to maintain the growth of the single crystal. The melting granules are passed to the melt after a delay. There is also an apparatus which is suitable for carrying out the process and has a device which delays mixing of the molten granules and of the melt.

    摘要翻译： 一种制造半导体材料的单晶的方法，其中熔体的一部分通过拉线圈保持液态，在晶种上固化以形成生长的单晶，并且将颗粒熔化以保持生长 的单晶。 熔化的颗粒在延迟后通入熔体。 还有一种适用于进行该方法的装置，并且具有延迟熔融颗粒和熔体混合的装置。