Writer shields with modified shapes for reduced flux shunting
    6.
    发明授权
    Writer shields with modified shapes for reduced flux shunting 有权
    作者盾牌具有改进的形状,用于减少通量分流

    公开(公告)号:US08542461B2

    公开(公告)日:2013-09-24

    申请号:US12806803

    申请日:2010-08-20

    IPC分类号: G11B5/147 G11B5/187

    摘要: A perpendicular magnetic recording (PMR) head is fabricated with a configuration of leading edge shields and trailing edge shields that reduce the leakage of flux between the main pole and the shields. The reduction of leakage is achieved by eliminating the sharp 90° corner between the backside surfaces of the shields and the surfaces adjacent to the main pole. In one embodiment the corner is replaced by two successive acute angles, in another embodiment it is replaced by a rounded surface. In a final embodiment, leakage between the pole and trailing edge shield is achieved by shortening the length of the write gap by forming the shield with a double taper.

    摘要翻译: 垂直磁记录(PMR)头被制造成具有前缘屏蔽和后缘屏蔽的结构,其减小主极和屏蔽之间的通量泄漏。 通过消除屏蔽的背面和与主极相邻的表面之间的尖锐的90°角来实现泄漏的减少。 在一个实施例中,角部被两个连续的锐角取代,在另一个实施例中,它被圆形表面所代替。 在最终实施例中,通过用双锥形形成屏蔽来缩短写入间隙的长度来实现极和后缘屏蔽之间的泄漏。

    Method for cleaning backside etch during manufacture of integrated circuits
    9.
    发明授权
    Method for cleaning backside etch during manufacture of integrated circuits 有权
    在集成电路制造期间清洗背面蚀刻的方法

    公开(公告)号:US08420550B2

    公开(公告)日:2013-04-16

    申请号:US11611403

    申请日:2006-12-15

    IPC分类号: H01L21/302 H01L21/461

    CPC分类号: H01L21/6708 H01L21/67051

    摘要: A method for manufacturing semiconductor substrates. The method includes providing a semiconductor wafer, which has an upper surface, a backside surface, and an edge region around a periphery of the semiconductor wafer. In a preferred embodiment, the upper surface is often for the manufacture of the integrated circuit device elements themselves. The method includes subjecting the semiconductor wafer to one or more process steps to form one or more films of materials on the backside surface. The method mounts the semiconductor wafer to expose the backside surface. The method rotates the semiconductor wafer in a circular manner. In a specific embodiment, the method includes supplying an acid solution containing fluorine bearing species, a nitric acid species, a surfactant species, and an organic acid species, on at least the backside surface as the semiconductor wafer rotates. The method causes removal of one or more contaminants from the backside surface, while a portion of the center region of the backside surface remains exposed as the semiconductor wafer rotates in the circular manner.

    摘要翻译: 一种半导体衬底的制造方法。 该方法包括提供半导体晶片,该半导体晶片具有上表面,后表面和围绕半导体晶片周边的边缘区域。 在优选实施例中,上表面通常用于制造集成电路器件元件本身。 该方法包括使半导体晶片经受一个或多个工艺步骤以在背面上形成一个或多个材料膜。 该方法安装半导体晶片以露出背面。 该方法以圆形方式旋转半导体晶片。 在具体实施方案中,该方法包括在半导体晶片旋转时在至少后侧表面上提供含有氟含量的种类的酸溶液,硝酸物质,表面活性剂种类和有机酸物质。 该方法从背面表面去除一种或多种污染物,而当半导体晶片以圆形方式旋转时,背面的中心区域的一部分保持暴露。

    Back channel communication
    10.
    发明授权
    Back channel communication 有权
    后通道通信

    公开(公告)号:US08418004B2

    公开(公告)日:2013-04-09

    申请号:US13046991

    申请日:2011-03-14

    CPC分类号: H04L12/66 H04B3/32

    摘要: Various embodiments are described for back channel communication. One embodiment is a method that comprises receiving data at customer premises equipment (CPE), determining at least one error in the received data, formatting the determined error for communication to a central office (CO), and sending the formatted error to the CO via a back channel, wherein the formatted error is sent between sync frames of a discrete multitone (DMT) superframe.

    摘要翻译: 对于后向信道通信描述了各种实施例。 一个实施例是一种方法,其包括在客户驻地设备(CPE)处接收数据,确定接收到的数据中的至少一个错误,将确定的错误格式化为中心局(CO),并将格式化的错误发送到CO经由 背信道,其中格式化的错误在离散多音(DMT)超帧的同步帧之间发送。