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20 条记录 (耗时 0.015 秒)

    Variable Resistance Memory Device
    2.
    发明申请
    Variable Resistance Memory Device 有权
    可变电阻存储器件

    公开(公告)号：US20160180929A1

    公开(公告)日：2016-06-23

    申请号：US14955789

    申请日：2015-12-01

    申请人： YounSeon Kang ,  Jungdal Choi ,  Masayuki Terai ,  Youngbae Kim ,  Jung Moo Lee ,  Seungjae Jung

    发明人： YounSeon Kang ,  Jungdal Choi ,  Masayuki Terai ,  Youngbae Kim ,  Jung Moo Lee ,  Seungjae Jung

    IPC分类号： G11C13/00

    CPC分类号： G11C13/0004 ,  G11C7/00 ,  G11C8/00 ,  G11C11/16 ,  G11C11/1659 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/224 ,  H01L27/2409 ,  H01L27/2481

    摘要： A variable resistance memory device includes upper interconnections on a substrate, first and second word lines provided between the substrate and the upper interconnections and vertically spaced apart from each other, a first bit line disposed between the first and second word lines and intersecting the first and second word lines, memory cells provided in an intersecting region of the first word line and the first bit line and an intersecting region of the second word line and the first bit line, a first word line contact directly connecting the first word line to a corresponding one of the upper interconnections, and a second word line contact directly connecting the second word line to a corresponding one of the upper interconnections.

    摘要翻译： 可变电阻存储器件包括衬底上的上部互连，设置在衬底和上部互连之间并且彼此垂直间隔开的第一和第二字线，设置在第一和第二字线之间并与第一和第二字线相交的第一位线 第二字线，设置在第一字线和第一位线的交叉区域中的存储单元以及第二字线和第一位线的相交区域，将第一字线直接连接到相应的第一字线 上部互连中的一个，以及将第二字线直接连接到上部互连中的相应一个的第二字线接触。

    VACUUM INSULATION MATERIAL
    3.
    发明申请
    VACUUM INSULATION MATERIAL 审中-公开
    真空绝缘材料

    公开(公告)号：US20130101779A1

    公开(公告)日：2013-04-25

    申请号：US13805253

    申请日：2011-08-19

    申请人： Jaehyun Soh ,  Ilseob Yoon ,  Youngbae Kim

    发明人： Jaehyun Soh ,  Ilseob Yoon ,  Youngbae Kim

    IPC分类号： B32B3/02

    CPC分类号： B32B3/02 ,  F16L59/065 ,  F25D2201/14 ,  Y10T428/231

    摘要： A vacuum insulation material includes a core material, and a wrapping member configured to wrap the core material, wherein the wrapping member comprises an outermost layer externally exposed, a barrier layer located beneath the outermost layer and having at least two laminated polymer layers, each polymer layer having an inorganic layer metalized thereon, and a thermal bonding layer located beneath the barrier layer and contacting the core material, wherein the inorganic layers metalized on the polymer layers, respectively, are separated from each other, at least one of the inorganic layers being more than 600 Å in thickness.

    摘要翻译： 真空绝热材料包括芯材料和构造成包裹芯材料的包裹构件，其中包裹构件包括外露的最外层，位于最外层下方并具有至少两层叠聚合物层的阻挡层，每种聚合物 层，其上具有金属化的无机层，以及位于阻挡层下方并与芯材接触的热粘合层，其中分别在聚合物层上金属化的无机层彼此分离，至少一个无机层为 厚度超过600Å。

    Variable resistance memory device
    7.
    发明授权
    Variable resistance memory device 有权
    可变电阻存储器件

    公开(公告)号：US09514807B2

    公开(公告)日：2016-12-06

    申请号：US14955789

    申请日：2015-12-01

    申请人： YounSeon Kang ,  Jungdal Choi ,  Masayuki Terai ,  Youngbae Kim ,  Jung Moo Lee ,  Seungjae Jung

    发明人： YounSeon Kang ,  Jungdal Choi ,  Masayuki Terai ,  Youngbae Kim ,  Jung Moo Lee ,  Seungjae Jung

    IPC分类号： G11C11/34 ,  G11C13/00 ,  G11C11/16 ,  G11C8/00 ,  G11C7/00

    CPC分类号： G11C13/0004 ,  G11C7/00 ,  G11C8/00 ,  G11C11/16 ,  G11C11/1659 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/224 ,  H01L27/2409 ,  H01L27/2481

    摘要： A variable resistance memory device includes upper interconnections on a substrate, first and second word lines provided between the substrate and the upper interconnections and vertically spaced apart from each other, a first bit line disposed between the first and second word lines and intersecting the first and second word lines, memory cells provided in an intersecting region of the first word line and the first bit line and an intersecting region of the second word line and the first bit line, a first word line contact directly connecting the first word line to a corresponding one of the upper interconnections, and a second word line contact directly connecting the second word line to a corresponding one of the upper interconnections.

    摘要翻译： 可变电阻存储器件包括衬底上的上部互连，设置在衬底和上部互连之间并且彼此垂直间隔开的第一和第二字线，设置在第一和第二字线之间并与第一和第二字线相交的第一位线 第二字线，设置在第一字线和第一位线的交叉区域中的存储单元以及第二字线和第一位线的相交区域，将第一字线直接连接到相应的第一字线 上部互连中的一个，以及将第二字线直接连接到上部互连中的相应一个的第二字线接触。

    Vacuum insulation member, refrigerator having vacuum insulation member, and method for fabricating vacuum insulation member
    10.
    发明授权
    Vacuum insulation member, refrigerator having vacuum insulation member, and method for fabricating vacuum insulation member 有权
    真空绝热构件，具有真空绝热构件的冰箱，以及制造真空绝热构件的方法

    公开(公告)号：US08778477B2

    公开(公告)日：2014-07-15

    申请号：US13386744

    申请日：2010-08-06

    申请人： Minkyu Hwang ,  Dongju Jung ,  Ilseob Yoon ,  Jinwoo Shim ,  Kyungdo Kim ,  Youngbae Kim

    发明人： Minkyu Hwang ,  Dongju Jung ,  Ilseob Yoon ,  Jinwoo Shim ,  Kyungdo Kim ,  Youngbae Kim

    IPC分类号： F16L59/065

    CPC分类号： F25D23/06 ,  F16L59/065 ,  F25D2201/14

    摘要： Disclosed are a vacuum insulation member, a refrigerator having a vacuum insulation member, and a method for fabricating a vacuum insulation member. The vacuum insulation member includes: an envelope having gas impermeability and having a certain decompressed space therein; and a core having a certain shape, having an empty space formed therein, and disposed at an inner side of the envelope to support the envelope. The use of a glass fiber core can be avoided, and thus, employing equipment for preprocessing the glass fiber core and time required therefor can be restrained and fabrication can be facilitated.

    摘要翻译： 公开了真空绝热构件，具有真空绝热构件的冰箱和制造真空绝热构件的方法。 真空绝热部件包括：具有气体不透性且在其中具有一定减压空间的外壳; 以及具有一定形状的芯，其中形成有空的空间，并设置在信封的内侧以支撑外壳。 可以避免使用玻璃纤维芯，因此可以抑制玻璃纤维芯的预处理设备及其所需要的时间，并且可以促进制造。