Semiconductor disk devices and related methods of randomly accessing data
    2.
    发明授权
    Semiconductor disk devices and related methods of randomly accessing data 有权
    半导体磁盘设备及随机访问数据的相关方法

    公开(公告)号:US08521946B2

    公开(公告)日:2013-08-27

    申请号:US12338527

    申请日:2008-12-18

    IPC分类号: G06F12/00

    摘要: A computing system includes a host, a data source device, and a controller. The controller is configured to respond to a random access command from the host by setting information in a register that selects what data is to be accessed in the data source device. The controller then successively accesses the data in the data source device using the information that was set in the register.

    摘要翻译: 计算系统包括主机,数据源设备和控制器。 控制器被配置为通过设置在数据源设备中选择要访问的数据的寄存器中的信息来响应来自主机的随机访问命令。 然后,控制器使用在寄存器中设置的信息连续地访问数据源设备中的数据。

    METHODS AND APPARATUSES FOR MANAGING BAD MEMORY CELL
    3.
    发明申请
    METHODS AND APPARATUSES FOR MANAGING BAD MEMORY CELL 审中-公开
    用于管理边缘记忆细胞的方法和装置

    公开(公告)号:US20100269000A1

    公开(公告)日:2010-10-21

    申请号:US12763626

    申请日:2010-04-20

    申请人: Yang-Sup LEE

    发明人: Yang-Sup LEE

    摘要: A method for managing a bad cell is provided. The method includes reading status data from a page buffer and detecting a location of a bad cell from the status data. The method may further include remapping a bad address for the bad cell to a spare address for a spare cell in the same page.

    摘要翻译: 提供了一种用于管理坏小区的方法。 该方法包括从页面缓冲器读取状态数据并从状态数据中检测坏单元的位置。 该方法还可以包括将坏小区的坏地址重新映射到同一页中的备用小区的备用地址。

    Non-volatile memory system storing data in single-level cell or multi-level cell according to data characteristics
    4.
    发明授权
    Non-volatile memory system storing data in single-level cell or multi-level cell according to data characteristics 有权
    非易失性存储器系统根据数据特性将数据存储在单级单元或多级单元中

    公开(公告)号:US07676626B2

    公开(公告)日:2010-03-09

    申请号:US11640304

    申请日:2006-12-18

    IPC分类号: G06F13/00 G11C5/06

    摘要: Provided is a system storing data received from an application or file system in a non-volatile memory system of single-level cells and multi-level cells in accordance with one or more data characteristics. The non-volatile memory system includes a non-volatile memory cell array having a plurality of multi-level cells forming a MLC area and a plurality of single-level cells forming a SLC area, and an interface unit analyzing a characteristic of the write data and generating a corresponding data characteristic signal. A flash transition layer receives the data characteristic signal, and determines whether the write data should be stored in the MLC area or the SLC area based on whether or not the write data will be accessed by the file, or whether the address associated with the write data is frequently updated or not.

    摘要翻译: 提供了一种系统,其根据一个或多个数据特征将从应用或文件系统接收的数据存储在单级单元和多级单元的非易失性存储器系统中。 非易失性存储器系统包括具有形成MLC区域的多个多电平单元和形成SLC区域的多个单电平单元的非易失性存储单元阵列,以及分析写入数据的特性的接口单元 并产生相应的数据特征信号。 闪速转换层接收数据特征信号,并且基于写入数据是否被文件访问来确定写入数据是否应存储在MLC区域或SLC区域中,或者是否与写入相关联的地址 数据频繁更新。

    FLASH MEMORY WEAR-LEVELING
    5.
    发明申请
    FLASH MEMORY WEAR-LEVELING 有权
    闪存记忆磨损

    公开(公告)号:US20080313505A1

    公开(公告)日:2008-12-18

    申请号:US11771531

    申请日:2007-06-29

    IPC分类号: G06F11/00

    摘要: A memory system and corresponding method of wear-leveling are provided, the system including a controller, a random access memory in signal communication with the controller, and another memory in signal communication with the controller, the other memory comprising a plurality of groups, each group comprising a plurality of first erase units or blocks and a plurality of second blocks, wherein the controller exchanges a first block from a group with a second block in response to at least one block erase count within the group; and the method including receiving a command having a logical address, converting the logical address into a logical block number, determining a group number for a group that includes the converted logical block number, and checking whether group information comprising block erase counts for the group is loaded into random access memory, and if not, loading the group information into random access memory.

    摘要翻译: 提供了一种存储器系统和相应的磨损均衡方法,所述系统包括控制器,与控制器进行信号通信的随机存取存储器,以及与控制器进行信号通信的另一存储器,所述另一存储器包括多个组,每个组 组包括多个第一擦除单元或块和多个第二块,其中响应于该组内的至少一个块擦除计数,控制器从具有第二块的组与第一块交换第一块; 所述方法包括:接收具有逻辑地址的命令,将所述逻辑地址转换为逻辑块号,确定包含所转换的逻辑块号的组的组号,以及检查是否包括所述组的块擦除计数的组信息是 加载到随机存取存储器中,如果没有,将组信息加载到随机存取存储器中。

    Control plane architecture for automatically switched optical network
    7.
    发明授权
    Control plane architecture for automatically switched optical network 有权
    用于自动切换光网络的控制平面架构

    公开(公告)号:US07339889B2

    公开(公告)日:2008-03-04

    申请号:US10401552

    申请日:2003-03-31

    IPC分类号: G01R31/08

    摘要: Methods and apparatus are provided for bandwidth management within Automatically Switched Optical Networks. An Optical Connection Controller (OCC) provides threshold based load balancing using an upper and a lower threshold for each port of a network element, and once port usage exceeds the upper threshold no more connections are allowed through the port until the port usage falls below the lower threshold. The OCC also minimizes fragmentation of a port so as to reduce the probability of call rejection as a result of fragmentation. The OCC also maintains a database of shortest paths between a network element and each destination, so that connections can be re-established quickly through alternate paths in the event of failure of a link or node. The OCC also provides the entire network with notification of a fault, thereby enhancing CR-LDP fault notification messaging.

    摘要翻译: 为自动切换光网络中的带宽管理提供了方法和设备。 光连接控制器(OCC)使用网元的每个端口的上限和下限阈值提供基于阈值的负载均衡,一旦端口使用超过上限阈值,端口使用率将不会超过端口允许的连接数, 较低的门槛。 OCC还最大限度地减少了端口的分片,以便降低由于分段而导致的呼叫拒绝的概率。 OCC还维护网元和每个目的地之间的最短路径的数据库,以便在链路或节点发生故障的情况下,通过备用路径快速重新建立连接。 OCC还为整个网络提供故障通知,从而增强CR-LDP故障通知消息。

    CONTROLLING NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY SYSTEM
    10.
    发明申请
    CONTROLLING NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY SYSTEM 有权
    控制非易失性存储器件和非易失性存储器系统

    公开(公告)号:US20130227346A1

    公开(公告)日:2013-08-29

    申请号:US13613906

    申请日:2012-09-13

    申请人: Yang-Sup Lee

    发明人: Yang-Sup Lee

    IPC分类号: G06F12/16 H03M13/05 G06F11/14

    摘要: A method for controlling a nonvolatile memory device includes reading a sub stripe including a plurality of sub pages stored in a first region, writing data stored in valid sub pages of the sub stripe to a second region different from the first region, and generating parity data using the data written to the second region and constituting a new sub stripe.

    摘要翻译: 一种用于控制非易失性存储器件的方法,包括:读取包含存储在第一区域中的多个子页面的子条带,将存储在该子条带的有效子页面中的数据写入到与第一区域不同的第二区域,以及生成奇偶校验数据 使用写入第二区域的数据并构成新的子条带。