公开(公告)号：US08783934B2

公开(公告)日：2014-07-22

申请号：US13431515

申请日：2012-03-27

申请人： Yasuo Ohno ,  Masahisa Nishio

发明人： Yasuo Ohno ,  Masahisa Nishio

IPC分类号： F21V7/04

CPC分类号： H05K1/14 ,  G02B6/0083 ,  G02F1/133615 ,  H05K1/148 ,  H05K2201/10106 ,  H05K2201/10189 ,  H05K2201/10287

摘要： A sidelight type spread illuminating apparatus includes a light guiding plate; a plurality of circuit boards arranged so as to face a side end face of the light guiding plate; a light source mounted on the circuit boards; and a connector that electrically connects the circuit boards adjacent to each other. The connector includes a socket and a plug that are removable therebetween. The socket and the plug are configured to be removable in a direction parallel to each mounting surface of the light sources of the circuit boards in a state that either the socket or the plug is fixed to ends of the circuit boards adjacent to each other.

摘要翻译： 侧光型展开照明装置包括导光板; 多个电路板，其布置成面对所述导光板的侧端面; 安装在电路板上的光源; 以及将彼此相邻的电路板电连接的连接器。 连接器包括插座和可移除的插头。 插座和插头被配置为在插座或插头固定到彼此相邻的电路板的端部的状态下可以在平行于电路板的光源的每个安装表面的方向上移除。

公开(公告)号：US06441391B1

公开(公告)日：2002-08-27

申请号：US09940374

申请日：2001-08-29

申请人： Yasuo Ohno ,  Nobuyuki Hayama ,  Kensuke Kasahara ,  Tatsuo Nakayama ,  Hironobu Miyamoto ,  Yuji Takahashi ,  Yuji Ando ,  Kohji Matsunaga ,  Masaaki Kuzuhara

发明人： Yasuo Ohno ,  Nobuyuki Hayama ,  Kensuke Kasahara ,  Tatsuo Nakayama ,  Hironobu Miyamoto ,  Yuji Takahashi ,  Yuji Ando ,  Kohji Matsunaga ,  Masaaki Kuzuhara

IPC分类号： H01L2906

CPC分类号： H01L29/812 ,  H01L29/045 ,  H01L29/2003

摘要： An object of the present invention is to improve, in a group III nitride semiconductor device, the productivity, heat radiation characteristic and performance in the element high speed operation; upon a sapphire substrate in which an A plane (an (11-20) plane) is set to be the basal plane, an epitaxial growth layer of a group III nitride semiconductor is formed and, thereon, a gate electrode 16, a source electrode 15 and a drain electrode 17 are formed; these electrodes are disposed in such a way that a direction along which they are laid makes an angle within 20° with respect to a C axis of sapphire.

摘要翻译： 本发明的目的是在III族氮化物半导体器件中提高元件高速运转中的生产率，散热特性和性能; 在其中A平面（（11-20）面）设置为基面的蓝宝石衬底上，形成III族氮化物半导体的外延生长层，并且在其上形成栅电极16，源电极 15和漏电极17; 这些电极被设置成使得它们被放置的方向相对于蓝宝石的C轴成20°以内的角度。

公开(公告)号：US06373082B1

公开(公告)日：2002-04-16

申请号：US09205707

申请日：1998-12-04

申请人： Yasuo Ohno ,  Yuji Takahashi ,  Kazuaki Kunihiro

发明人： Yasuo Ohno ,  Yuji Takahashi ,  Kazuaki Kunihiro

IPC分类号： H01L31119

CPC分类号： H01L23/4824 ,  H01L21/761 ,  H01L24/06 ,  H01L29/1029 ,  H01L29/42316 ,  H01L29/812 ,  H01L2224/48091 ,  H01L2924/12036 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/00014 ,  H01L2924/00

摘要： A compound semiconductor field effect transistor having, between a gate electrode and a drain electrode, a non-gate region which is the channel region not covered by the gate electrode, wherein a plurality of isolation regions are formed in the non-gate region in such a way that they extend in the direction of channel current and contact with the gate electrode. This compound semiconductor field effect transistor is improved in breakdown voltage between drain and gate and yet retains the high-speed operability of transistor.

摘要翻译： 一种化合物半导体场效应晶体管，其在栅电极和漏电极之间具有非栅极区，其为不被栅电极覆盖的沟道区，其中在非栅极区中形成多个隔离区 它们在沟道电流的方向上延伸并与栅电极接触的方式。 该化合物半导体场效应晶体管在漏极和栅极之间的击穿电压得到改善，并且保持了晶体管的高速可操作性。

公开(公告)号：US6075263A

公开(公告)日：2000-06-13

申请号：US57180

申请日：1998-04-08

申请人： Yuji Takahashi ,  Yasuo Ohno

发明人： Yuji Takahashi ,  Yasuo Ohno

IPC分类号： G01R31/26 ,  H01L21/338 ,  H01L21/66 ,  H01L23/544 ,  H01L29/812 ,  H01L29/78 ,  H01L33/00

CPC分类号： H01L22/34 ,  G01R31/2621 ,  H01L2924/0002

摘要： A method of evaluating the surface/interface of a semiconductor device is disclosed. This method uses the semiconductor device in which an n-type source electrode and an n-type drain electrode are formed on both ends of the surface of an n-type conductive layer formed on a semiconductor substrate; and a gate electrode composed of a p-type ohmic electrode or an n-type Schottky electrode is formed on one end of the surface on which the source or drain electrode is not disposed. In this semiconductor device, voltage to be applied to the gate electrode is changed and a change of current flowing between the source electrode and the drain electrode in response to the voltage change is measured. Then the type of trap on the surface/interface of the semiconductor is determined from an amount of change in the value of the current.

摘要翻译： 公开了一种评估半导体器件的表面/界面的方法。 该方法使用在半导体基板上形成的n型导体层的表面的两端形成有n型源电极和n型漏电极的半导体装置， 在未设置源极或漏极的表面的一端形成由p型欧姆电极或n型肖特基电极构成的栅电极。 在该半导体器件中，施加到栅电极的电压发生变化，并且测量响应于电压变化在源电极和漏电极之间流动的电流的变化。 然后根据电流值的变化量确定半导体表面/界面上的陷阱类型。

公开(公告)号：US4831422A

公开(公告)日：1989-05-16

申请号：US829038

申请日：1986-02-13

申请人： Yasuo Ohno

发明人： Yasuo Ohno

IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/06 ,  H01L29/10 ,  H01L29/36 ,  H01L29/78

CPC分类号： H01L29/36 ,  H01L29/0615 ,  H01L29/1029 ,  H01L29/1045

摘要： A field effect transistor having a short channel length of 1 .mu.m or less is disclosed. The transistor includes a plurality of impurity regions provided in the channel region between the source and drain regions. The impurity region has the same conductivity type as the channel produced between the impurity regions and a higher impurity density than the carrier density of the channel so that the heat in the carriers is transferred laterally to the impurity regions.

摘要翻译： 公开了具有1μm或更小的通道长度的场效应晶体管。 晶体管包括设置在源区和漏区之间的沟道区中的多个杂质区。 杂质区域具有与在杂质区域之间产生的沟道相同的导电类型和比通道的载流子密度高的杂质密度，使得载流子中的热横向转移到杂质区域。

公开(公告)号：US4552312A

公开(公告)日：1985-11-12

申请号：US569167

申请日：1984-01-09

申请人： Yasuo Ohno ,  Tadashi Seino ,  Yukio Ueno ,  Kenji Kariyama ,  Shinji Utsugi ,  Shigeo Okada

发明人： Yasuo Ohno ,  Tadashi Seino ,  Yukio Ueno ,  Kenji Kariyama ,  Shinji Utsugi ,  Shigeo Okada

IPC分类号： F02M51/06 ,  F02M51/08 ,  F02M61/18 ,  B05B1/30

CPC分类号： F02M61/188 ,  F02M51/0667 ,  F02M61/18 ,  F02M61/1853 ,  F02M2051/08 ,  Y10S239/90

摘要： A fuel injection valve has a collar-shaped stopper at the front of a plunger for restricting the plunger stroke between the stopper and the end of a guide pipe. The divergent conical surface or spherical surface is formed at the end of the guide pipe, a spherical surface which makes contact with the conical surface is formed at the opposite side of the stopper of the plunger to the ball, an automatic centering operation is performed at the stroke end of the plunger, thereby preventing the irregular wear of the ball valve and the seat surface to stabilize the performance for a long period of time.

摘要翻译： 燃料喷射阀在柱塞的前部具有一个环形止动器，用于限制止动件和导管端部之间的柱塞行程。 发散锥形表面或球形表面形成在引导管的端部，与柱塞接触的球形表面形成在柱塞的塞子与球的相反侧，自动对中操作在 柱塞的行程端，从而防止球阀和阀座表面的不规则磨损长期稳定性能。

公开(公告)号：US20100302806A1

公开(公告)日：2010-12-02

申请号：US12805604

申请日：2010-08-09

申请人： Yasuo Ohno

发明人： Yasuo Ohno

IPC分类号： F21V7/22

CPC分类号： G02B6/0091 ,  G02B6/0068 ,  G02B6/0085

摘要： A planar illumination device comprises a light guide plate, a point-like light source arranged on an incoming-light face of the light guide plate, an inner frame formed substantially in a U-shape on a top view, and an outer frame having a seat portion and side walls wherein the light guide plate is accommodated in the inner frame and mounted on the seat portion of the outer frame, while the point-like light source is arranged along the incoming-light face of the light guide plate and held between the incoming-light face and the side wall of the outer frame. At the inner frame, an elastic action portion which is elastically deformed so as to make a partial contact with the outer frame and energizes the light guide plate toward the point-like light source is provided.

摘要翻译： 平面照明装置包括导光板，布置在导光板的入射光面上的点状光源，在顶视图上基本上形成U形的内框架，以及具有 座部和侧壁，其中导光板容纳在内框架中并安装在外框的座部上，同时点状光源沿着导光板的入射面布置并保持在 外框的入射面和侧壁。 在内框架上设置有弹性变形部，与外框部分接触，并使导光板朝向点状光源供电。

公开(公告)号：US20090316434A1

公开(公告)日：2009-12-24

申请号：US11919138

申请日：2006-02-17

申请人： Yasuo Ohno

发明人： Yasuo Ohno

IPC分类号： F21V7/22

CPC分类号： G02B6/0091 ,  G02B6/0068 ,  G02B6/0085

摘要： A planar illumination device comprises a light guide plate, a point-like light source arranged on an incoming-light face of the light guide plate, an inner frame formed substantially in a U-shape on a top view, and an outer frame having a seat portion and side walls wherein the light guide plate is accommodated in the inner frame and mounted on the seat portion of the outer frame, while the point-like light source is arranged along the incoming-light face of the light guide plate and held between the incoming-light face and the side wall of the outer frame. At the inner frame, an elastic action portion which is elastically deformed so as to make a partial contact with the outer frame and energizes the light guide plate toward the point-like light source is provided.

摘要翻译： 平面照明装置包括导光板，布置在导光板的入射光面上的点状光源，在顶视图上基本上形成U形的内框架，以及具有 座部和侧壁，其中导光板容纳在内框架中并安装在外框的座部上，同时点状光源沿着导光板的入射面布置并保持在 外框的入射面和侧壁。 在内框架上设置有弹性变形部，与外框部分接触，并使导光板向点状光源供能。

公开(公告)号：US20090201699A1

公开(公告)日：2009-08-13

申请号：US12084635

申请日：2006-10-18

申请人： Yasuo Ohno

发明人： Yasuo Ohno

IPC分类号： F21V7/04

CPC分类号： H05K1/0206 ,  G02B6/0083 ,  H04M1/22 ,  H05K1/189 ,  H05K3/0061 ,  H05K3/4069 ,  H05K2201/0209 ,  H05K2201/0394 ,  H05K2201/10106 ,  H05K2203/0191

摘要： A planar illumination device in which workability of a filling work of a heat conduction agent is improved and a heat generated from a point-like light source is efficiently radiated so as to achieve high brightness. In a planar illumination device 1 according to the present invention, a recess portion 23 is formed on a part of a face on which a point-like light source 3 is mounted in a double-sided flexible print circuit board 10, a bottom face 22 of the recess portion 23 is made of a conductor pattern 7R on the opposite side 10R of a side 10F on which the point-like light source is mounted in the double-sided flexible print circuit board 10, and a heat conducting resin 11 is filled in a space constituted by the recess portion 23 and the mounting face 3b of the point-like light source 3. The double-sided flexible print circuit board 10 is preferably mounted on a radiator plate 5a using a heat conducting tape 12.

摘要翻译： 提高热传导剂的填充作业的可加工性，并且有效地照射从点状光源产生的热量以实现高亮度的平面照明装置。 在根据本发明的平面照明装置1中，在双面柔性印刷电路板10上安装有点状光源3的面的一部分上形成凹部23，底面22 凹部23由在双面柔性印刷电路板10上安装有点状光源的侧面10F的相对侧10R上的导体图案7R构成，并且填充导热性树脂11 在由凹部23和点状光源3的安装面3b构成的空间内。双面柔性印刷电路板10优选使用导热带12安装在散热板5a上。

公开(公告)号：US06552373B2

公开(公告)日：2003-04-22

申请号：US09818587

申请日：2001-03-28

申请人： Yuji Ando ,  Hironobu Miyamoto ,  Naotaka Iwata ,  Koji Matsunaga ,  Masaaki Kuzuhara ,  Kensuke Kasahara ,  Kazuaki Kunihiro ,  Yuji Takahashi ,  Tatsuo Nakayama ,  Nobuyuki Hayama ,  Yasuo Ohno

发明人： Yuji Ando ,  Hironobu Miyamoto ,  Naotaka Iwata ,  Koji Matsunaga ,  Masaaki Kuzuhara ,  Kensuke Kasahara ,  Kazuaki Kunihiro ,  Yuji Takahashi ,  Tatsuo Nakayama ,  Nobuyuki Hayama ,  Yasuo Ohno

IPC分类号： H01L31072

CPC分类号： H01L29/7787 ,  H01L29/2003

摘要： A hetero-junction FET has an intermediate layer including n-type-impurity doped layer between an electron supply layer and an n-type cap layer. The intermediate layer cancels the polarized negative charge generated between the electron supply layer and the n-type cap layer by ionized positive charge, thereby reducing the barrier against the electrons and source/drain resistance.

摘要翻译： 异质结FET在电子供给层和n型盖层之间具有包括n型杂质掺杂层的中间层。 中间层通过离子化的正电荷抵消在电子供给层和n型覆盖层之间产生的极化的负电荷，从而减少对电子的阻挡和源极/漏极电阻。