中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

75 records (took 0.024 seconds)

    Device and method for obtaining clear image
    5.
    发明授权
    Device and method for obtaining clear image 有权
    用于获取清晰图像的设备和方法

    公开(公告)号：US08306360B2

    公开(公告)日：2012-11-06

    申请号：US12003976

    申请日：2008-01-04

    Applicant: Yi-Chun Lin ,  Chih-Wei Chen ,  Chiou-Shann Fuh ,  Ming-Huang Shih

    Inventor： Yi-Chun Lin ,  Chih-Wei Chen ,  Chiou-Shann Fuh ,  Ming-Huang Shih

    IPC: G06K9/36 ,  G09G5/00 ,  H04N9/74 ,  H04N9/75 ,  H04N9/76

    CPC classification number: G06T5/50 ,  G06T7/13

    Abstract: A device and a method for obtaining a clear image, the method is executed by a digital signal processor (DSP) chip or a microprocessor. Through merging clear parts of two images with different focal lengths, a single clear image is obtained. The image is divided into a plurality of blocks, and then edge detection is processed to obtain an edge image. Blocks having more complete edge information are selected as clear blocks. Then, the clear blocks are further merged into a single clear image. Once the images are processed with the method, a depth of field of the image can be adjusted, without adding hardware elements of a digital camera such as a variable diaphragm.

    Abstract translation: 一种用于获得清晰图像的装置和方法，该方法由数字信号处理器（DSP）芯片或微处理器执行。 通过合并具有不同焦距的两个图像的清晰部分，获得单个清晰图像。 图像被分成多个块，然后处理边缘检测以获得边缘图像。 具有更完整边缘信息的块被选择为清除块。 然后，清除块进一步合并为单个清晰图像。 一旦利用该方法处理了图像，就可以调整图像的景深，而不需要增加诸如可变隔膜的数码相机的硬件元件。

    Fully isolated high-voltage MOS device
    6.
    发明授权
    Fully isolated high-voltage MOS device 有权
    全隔离高压MOS器件

    公开(公告)号：US08236642B2

    公开(公告)日：2012-08-07

    申请号：US12910591

    申请日：2010-10-22

    Applicant: Chi-San Wei ,  Kuo-Ming Wu ,  Yi-Chun Lin

    Inventor： Chi-San Wei ,  Kuo-Ming Wu ,  Yi-Chun Lin

    IPC: H01L21/02

    CPC classification number: H01L29/1083 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/66659 ,  H01L29/7835

    Abstract: A semiconductor structure includes a semiconductor substrate; an n-type tub extending from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the n-type tub comprises a bottom buried in the semiconductor substrate; a p-type buried layer (PBL) on a bottom of the tub, wherein the p-type buried layer is buried in the semiconductor substrate; and a high-voltage n-type metal-oxide-semiconductor (HVNMOS) device over the PBL and within a region encircled by sides of the n-type tub.

    Abstract translation: 半导体结构包括半导体衬底; 从半导体衬底的顶表面延伸到半导体衬底中的n型桶，其中n型桶包括埋在半导体衬底中的底部; 在桶的底部设置p型掩埋层（PBL），其中p型掩埋层埋在半导体衬底中; 和高压n型金属氧化物半导体（HVNMOS）器件，并且在由n型槽的侧面包围的区域内。

    Integrated Schottky diode and power MOSFET
    7.
    发明授权
    Integrated Schottky diode and power MOSFET 有权
    集成肖特基二极管和功率MOSFET

    公开(公告)号：US08022446B2

    公开(公告)日：2011-09-20

    申请号：US11778525

    申请日：2007-07-16

    Applicant: Wan-Hua Huang ,  Kuo-Ming Wu ,  Yi-Chun Lin ,  Ming Xiang Li

    Inventor： Wan-Hua Huang ,  Kuo-Ming Wu ,  Yi-Chun Lin ,  Ming Xiang Li

    IPC: H01L29/78

    CPC classification number: H01L29/782 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/402

    Abstract: A semiconductor structure includes a semiconductor substrate; a first well region of a first conductivity type in the semiconductor substrate; a metal-containing layer on the first well region, wherein the metal-containing layer and the first well region form a Schottky barrier; and a first heavily doped region of the first conductivity type in the first well region, wherein the first heavily doped region is horizontally spaced apart from the metal-containing layer.

    Abstract translation: 半导体结构包括半导体衬底; 半导体衬底中的第一导电类型的第一阱区; 所述第一阱区域上的含金属层，其中所述含金属层和所述第一阱区形成肖特基势垒; 以及第一阱区中的第一导电类型的第一重掺杂区，其中第一重掺杂区与水分离金属层。

    High voltage semiconductor devices and methods for fabricating the same
    8.
    发明授权
    High voltage semiconductor devices and methods for fabricating the same 有权
    高压半导体器件及其制造方法

    公开(公告)号：US07602037B2

    公开(公告)日：2009-10-13

    申请号：US11692213

    申请日：2007-03-28

    Applicant: Yi-Chun Lin ,  Chi-Chih Chen ,  Kuo-Ming Wu ,  Ruey-Hsin Liu

    Inventor： Yi-Chun Lin ,  Chi-Chih Chen ,  Kuo-Ming Wu ,  Ruey-Hsin Liu

    IPC: H01L27/088 ,  H01L29/06

    CPC classification number: H01L29/7816 ,  H01L21/26586 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/66659 ,  H01L29/66689 ,  H01L29/7835

    Abstract: An exemplary embodiment of a semiconductor device capable of high-voltage operation includes a substrate with a well region therein. A gate stack with a first side and a second side opposite thereto, overlies the well region. Within the well region, a doped body region includes a channel region extending under a portion of the gate stack and a drift region is adjacent to the channel region. A drain region is within the drift region and spaced apart by a distance from the first side thereof and a source region is within the doped body region near the second side thereof. There is no P-N junction between the doped body region and the well region.

    Abstract translation: 能够进行高压操作的半导体器件的示例性实施例包括其中具有阱区的衬底。 具有与其相对的第一侧和第二侧的栅极堆叠覆盖在阱区域上。 在阱区内，掺杂体区域包括在栅叠层的一部分下延伸的沟道区，漂移区与沟道区相邻。 漏极区域在漂移区域内并与其第一侧隔开距离，并且源极区域在其第二侧附近的掺杂体区域内。 在掺杂体区和阱区之间不存在P-N结。

    APPARATUS AND METHOD FOR DETECTING DEFECT OF OPTICAL DISC
    9.
    发明申请
    APPARATUS AND METHOD FOR DETECTING DEFECT OF OPTICAL DISC 有权
    检测光盘缺陷的装置和方法

    公开(公告)号：US20080279071A1

    公开(公告)日：2008-11-13

    申请号：US12116551

    申请日：2008-05-07

    Applicant: Ching-Chuan CHEN ,  Yi-Chun LIN

    Inventor： Ching-Chuan CHEN ,  Yi-Chun LIN

    IPC: G11B20/18

    CPC classification number: G11B7/0948 ,  G01N21/9506 ,  G11B7/0053 ,  G11B20/18

    Abstract: A method for detecting a defect of an optical disc includes steps of: confirming an optical pickup head being accessing data in a track on state; determining a defective region of the optical disc according to a peak-to peak value of a wobble signal; and, maintaining the optical pickup head being unchanged when the defective region is detected.

    Abstract translation: 一种用于检测光盘的缺陷的方法，包括以下步骤：确认光拾取头正在进入轨道打开状态的数据; 根据摆动信号的峰值到峰值确定光盘的缺陷区域; 并且当检测到缺陷区域时，保持光学拾取头不变。

    BUILT-IN WEBCAM
    10.
    发明申请
    BUILT-IN WEBCAM 有权
    内置WEBCAM

    公开(公告)号：US20070253703A1

    公开(公告)日：2007-11-01

    申请号：US11464031

    申请日：2006-08-11

    Applicant: Wen-Ji Tsai ,  Yi-Chun Lin ,  Wan-Chi Lin ,  Jung-Wen Chang

    Inventor： Wen-Ji Tsai ,  Yi-Chun Lin ,  Wan-Chi Lin ,  Jung-Wen Chang

    IPC: G03B19/00

    CPC classification number: G03B17/02 ,  G06F1/1616 ,  G06F1/1686 ,  H04N5/2251 ,  H04N7/142

    Abstract: A webcam built in an electronic device includes a housing, a video camera, and a latching mechanism. The video camera is movable between a first location in the housing and a second location outside the housing. The latching mechanism maintains the video camera at the first location and the second location.

    Abstract translation: 内置在电子设备中的网络摄像机包括外壳，摄像机和锁定机构。 摄像机可以在壳体中的第一位置和壳体外部的第二位置之间移动。 锁定机构将摄像机保持在第一位置和第二位置。

Patent Agency Ranking