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    DISTRIBUTED ELECTRODE ARRAY FOR PLASMA PROCESSING
    2.
    发明申请
    DISTRIBUTED ELECTRODE ARRAY FOR PLASMA PROCESSING 审中-公开

    公开(公告)号：US20190057840A1

    公开(公告)日：2019-02-21

    申请号：US16107844

    申请日：2018-08-21

    Applicant: Applied Materials, Inc.

    Inventor： Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  James D. CARDUCCI ,  Yue GUO ,  Olga REGELMAN

    IPC: H01J37/32

    CPC classification number: H01J37/32174 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32568

    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

    HEATED SHOWERHEAD ASSEMBLY
    3.
    发明申请
    HEATED SHOWERHEAD ASSEMBLY 有权
    加热淋浴组件

    公开(公告)号：US20150053794A1

    公开(公告)日：2015-02-26

    申请号：US14531831

    申请日：2014-11-03

    Applicant: APPLIED MATERIALS, INC.

    Inventor： James D. CARDUCCI ,  Olga REGELMAN ,  Kallol BERA ,  Douglas A. BUCHBERGER, JR. ,  Paul BRILLHART

    IPC: H01J37/32 ,  B32B43/00

    CPC classification number: H01J37/3244 ,  B32B43/00 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45591 ,  H01J37/32449 ,  H01J37/32724 ,  H01J2237/3343 ,  Y10T29/49815

    Abstract: The present disclosure generally comprises a heated showerhead assembly that may be used to supply processing gases into a processing chamber. The processing chamber may be an etching chamber. When processing gas is evacuated from the processing chamber, the uniform processing of the substrate may be difficult. As the processing gas is pulled away from the substrate and towards the vacuum pump, the plasma, in the case of etching, may not be uniform across the substrate. Uneven plasma may lead to uneven etching. To prevent uneven etching, the showerhead assembly may be separated into two zones each having independently controllable gas introduction and temperature control. The first zone corresponds to the perimeter of the substrate while the second zone corresponds to the center of the substrate. By independently controlling the temperature and the gas flow through the showerhead zones, etching uniformity of the substrate may be increased.

    Abstract translation: 本公开通常包括可用于将处理气体供应到处理室中的加热喷头组件。 处理室可以是蚀刻室。 当处理气体从处理室排出时，衬底的均匀处理可能是困难的。 当处理气体从衬底被拉离并且朝向真空泵时，在蚀刻的情况下，等离子体在衬底上可能不均匀。 不均匀的等离子体可能导致不均匀的蚀刻。 为了防止不均匀的蚀刻，喷头组件可以分成两个区域，每个区域具有独立可控的气体引入和温度控制。 第一区域对应于衬底的周边，而第二区域对应于衬底的中心。 通过独立地控制温度和通过喷头区域的气体流动，可以增加基板的蚀刻均匀性。

    PLASMA PROCESSING APPARATUS AND LINER ASSEMBLY FOR TUNING ELECTRICAL SKEWS
    7.
    发明申请
    PLASMA PROCESSING APPARATUS AND LINER ASSEMBLY FOR TUNING ELECTRICAL SKEWS 审中-公开
    等离子体加工设备和用于调谐电机的衬套组件

    公开(公告)号：US20150279633A1

    公开(公告)日：2015-10-01

    申请号：US14738324

    申请日：2015-06-12

    Applicant: Applied Materials, Inc.

    Inventor： James D. CARDUCCI ,  Zhigang CHEN ,  Shahid RAUF ,  Kenneth S. COLLINS

    IPC: H01J37/32

    CPC classification number: H01J37/32623 ,  H01J37/32082 ,  H01J37/32458 ,  H01J37/32495 ,  H01L21/67069 ,  Y10T428/13

    Abstract: The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for supporting the chamber lid. The chamber body is comprised of a chamber sidewall, a bottom wall and a liner assembly. The chamber sidewall and the bottom wall define a processing volume for containing a plasma. The liner assembly, disposed inside the processing volume, comprises of three or more slots formed thereon for providing an axial symmetric RF current path. The support assembly supports a substrate for processing within the chamber body. With the liner assembly with several symmetric slots, the present invention can prevent electromagnetic fields thereof from being azimuthal asymmetry.

    Abstract translation: 本发明公开了一种等离子体处理装置，其包括室盖，室主体和支撑组件。 室主体限定用于容纳等离子体的处理容积，用于支撑室盖。 腔室主体包括室侧壁，底壁和衬套组件。 腔室侧壁和底壁限定用于容纳等离子体的处理体积。 设置在处理容积内的衬套组件包括形成在其上的三个或更多个槽，用于提供轴向对称的RF电流路径。 支撑组件支撑用于在室主体内进行加工的基板。 利用具有多个对称槽的衬套组件，本发明可以防止其电磁场为方位角不对称。

    DISTRIBUTED ELECTRODE ARRAY FOR PLASMA PROCESSING
    8.
    发明申请
    DISTRIBUTED ELECTRODE ARRAY FOR PLASMA PROCESSING 审中-公开

    公开(公告)号：US20190287765A1

    公开(公告)日：2019-09-19

    申请号：US16432930

    申请日：2019-06-06

    Applicant: Applied Materials, Inc.

    Inventor： Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  James D. CARDUCCI ,  Yue GUO ,  Olga REGELMAN

    IPC: H01J37/32

    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

    DISTRIBUTED ELECTRODE ARRAY FOR PLASMA PROCESSING
    9.
    发明申请
    DISTRIBUTED ELECTRODE ARRAY FOR PLASMA PROCESSING 审中-公开

    公开(公告)号：US20190051496A1

    公开(公告)日：2019-02-14

    申请号：US16059608

    申请日：2018-08-09

    Applicant: Applied Materials, Inc.

    Inventor： Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  James D. CARDUCCI ,  Yue GUO ,  Olga REGELMAN

    IPC: H01J37/32

    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

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