公开(公告)号：US20200173022A1

公开(公告)日：2020-06-04

申请号：US16678996

申请日：2019-11-08

Applicant: Applied Materials, Inc.

Inventor： Xinhai HAN ,  Deenesh PADHI ,  Daemian Raj BENJAMIN RAJ ,  Kristopher ENSLOW ,  Wenjiao WANG ,  Masaki OGATA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Gregory Eugene CHICHKANOFF ,  Shailendra SRIVASTAVA ,  Jonghoon BAEK ,  Zakaria IBRAHIMI ,  Juan Carlos ROCHA-ALVAREZ ,  Tza-Jing GUNG

IPC: C23C16/455 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11551 ,  C23C16/40 ,  C23C16/34 ,  H01J37/32

Abstract: Embodiments of the disclosure describe an apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

公开(公告)号：US20180119281A1

公开(公告)日：2018-05-03

申请号：US15851695

申请日：2017-12-21

Applicant: Applied Materials, Inc.

Inventor： Jonghoon BAEK ,  Edwin C. SUAREZ ,  Tsutomu TANAKA ,  Edward P. HAMMOND, IV ,  Jeonghoon OH

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/509

CPC classification number: C23C16/45565 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32431 ,  H01J37/3244

Abstract: Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. A showerhead suspension electrically couples the backing plate to the showerhead. An electrically conductive bracket is coupled to the backing plate and spaced apart from the showerhead. The electrically conductive bracket may include a plate, a lower portion, an upper portion, and a vertical extension. The electrically conductive bracket contacts an electrical isolator.

公开(公告)号：US20200161093A1

公开(公告)日：2020-05-21

申请号：US16663215

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Xiaopu LI ,  Kallol BERA ,  Edward P. HAMMOND, IV ,  Jonghoon BAEK ,  Amit Kumar BANSAL ,  Jun MA ,  Satoru KOBAYASHI

IPC: H01J37/32 ,  C23C16/505

Abstract: Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.

公开(公告)号：US20150123541A1

公开(公告)日：2015-05-07

申请号：US14514930

申请日：2014-10-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Jonghoon BAEK ,  Soonam PARK ,  Xinglong CHEN ,  Dmitry LUBOMIRSKY

IPC: H05H1/46 ,  C23C16/52 ,  C23C16/44 ,  C23C16/503 ,  C23C16/509

CPC classification number: H01J37/32082 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/503 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32697 ,  H01J2237/334

Abstract: Embodiments of the present disclosure generally relate to an apparatus and method for reducing particle generation in a processing chamber. In one embodiment, the methods generally includes generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode, and applying a constant zero DC bias voltage to the powered top electrode during a film deposition process to minimize the electrical potential difference between the powered top electrode and the plasma and/or the electrical potential difference between the grounded bottom electrode and the plasma. Minimizing the electrical potential difference between the plasma and the electrodes reduces particle generation because the acceleration of the ions in the sheath region of the electrodes is reduced and the collision force of the ions with the protective coating layer on the electrodes is minimized. Therefore, particle generation on the substrate surface is reduced.

Abstract translation: 本公开的实施例一般涉及用于减少处理室中的颗粒产生的装置和方法。 在一个实施例中，所述方法通常包括在动力顶部电极和接地底部电极之间产生等离子体，其中顶部电极平行于底部电极，并且在膜沉积期间向动力顶部电极施加恒定的零直流偏置电压 以最小化上电极和等离子体之间的电位差和/或接地的底部电极和等离子体之间的电位差的过程。 最小化等离子体和电极之间的电位差可减少粒子产生，因为电极的鞘区域中的离子的加速度降低，并且离子与电极上的保护涂层的碰撞力最小化。 因此，衬底表面上的颗粒产生减少。

公开(公告)号：US20240222081A1

公开(公告)日：2024-07-04

申请号：US18600219

申请日：2024-03-08

Applicant: Applied Materials, Inc.

Inventor： Edward P. HAMMOND, IV ,  Jonghoon BAEK

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/509 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32174 ,  C23C16/4587 ,  C23C16/509 ,  H01J37/32568 ,  H01J37/32715 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/67069

Abstract: The present disclosure relates to a method and apparatus for controlling a plasma sheath near a substrate edge. Changing the voltage/current distribution across the inner electrode and the outer electrode with in the substrate assembly facilitates the spatial distribution of the plasma across the substrate. The method includes providing a first radio frequency power to a central electrode embedded in a substrate support assembly, providing a second radio frequency power to an annular electrode embedded in the substrate support assembly at a location different than the central electrode, wherein the annular electrode circumferentially surrounds the central electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

公开(公告)号：US20150273490A1

公开(公告)日：2015-10-01

申请号：US14726067

申请日：2015-05-29

Applicant: Applied Materials, Inc.

Inventor： Jozef KUDELA ,  Jonghoon BAEK ,  John M. WHITE ,  Robin TINER ,  Suhail ANWAR ,  Gaku FURUTA

IPC: B05B1/18

CPC classification number: B05B1/185 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32651 ,  Y10T137/6851

Abstract: Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

Abstract translation: 本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。 在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。 多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。 在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

公开(公告)号：US20210166915A1

公开(公告)日：2021-06-03

申请号：US16970110

申请日：2019-02-28

Applicant: Applied Materials, Inc.

Inventor： Edward P. HAMMOND, IV ,  Jonghoon BAEK

IPC: H01J37/32 ,  H01L21/683 ,  C23C16/509 ,  C23C16/458

Abstract: The present disclosure relates to a method and apparatus for controlling a plasma sheath near a substrate edge. Changing the voltage/current distribution across the inner electrode and the outer electrode with in the substrate assembly facilitates the spatial distribution of the plasma across the substrate. The method includes providing a first radio frequency power to a central electrode embedded in a substrate support assembly, providing a second radio frequency power to an annular electrode embedded in the substrate support assembly at a location different than the central electrode, wherein the annular electrode circumferentially surrounds the central electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

公开(公告)号：US20170236689A1

公开(公告)日：2017-08-17

申请号：US15587129

申请日：2017-05-04

Applicant: Applied Materials, Inc.

Inventor： Jonghoon BAEK ,  Soonam PARK ,  Xinglong CHEN ,  Dmitry LUBOMIRSKY

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/503 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32568 ,  H01J37/32697 ,  H01J2237/334

Abstract: Embodiments of the present disclosure generally relate to a method for reducing particle generation in a processing chamber. In one embodiment, the method includes generating a plasma between a first electrode and a second electrode of the processing chamber by applying a radio frequency (RF) power to the first electrode during an etch process, wherein the first electrode is disposed above the second electrode, and the second electrode is disposed above and opposing a substrate support having a substrate supporting surface, and applying a constant zero DC bias voltage to the first electrode during the process.

公开(公告)号：US20170148611A1

公开(公告)日：2017-05-25

申请号：US15424355

申请日：2017-02-03

Applicant: Applied Materials, Inc.

Inventor： Jonghoon BAEK ,  Soonam PARK ,  Xinglong CHEN ,  Dmitry LUBOMIRSKY

IPC: H01J37/32 ,  C23C16/503 ,  C23C16/509 ,  C23C16/52

Abstract: Embodiments of the present disclosure generally relate to an apparatus and method for reducing particle generation in a processing chamber. In one embodiment, an apparatus for processing a substrate is disclosed. The apparatus includes a chamber body, a lid assembly disposed above the chamber body, the lid assembly comprising a top electrode and a bottom electrode positioned substantially parallel to the top electrode, a gas distribution plate disposed between a substrate processing region and the lid assembly, and a substrate support disposed within the chamber body, the substrate support supporting having a substrate supporting surface, wherein the top electrode is in electrical communication with a radio frequency (RF) power supply and a DC bias modulation configuration, and the DC bias modulation configuration is configured to operate the top electrode at a constant zero DC bias voltage during a process.