公开(公告)号：US20150252477A1

公开(公告)日：2015-09-10

申请号：US14616206

申请日：2015-02-06

Applicant: Applied Materials, Inc.

Inventor： Victor NGUYEN ,  Mihaela BALSEANU ,  Ning LI ,  Steven D. MARCUS ,  Mark SALY ,  David THOMPSON ,  Li-Qun XIA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/34 ,  C23C16/24 ,  C23C16/50

CPC classification number: C23C16/45525 ,  C23C16/24 ,  C23C16/30 ,  C23C16/345 ,  C23C16/347 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/50

Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for forming a dielectric film. In one embodiment, the method includes placing a plurality of substrates inside a processing chamber and performing a sequence of exposing the substrates to a first reactive gas comprising silicon, and then exposing the substrates to a plasma of a second reactive gas comprising nitrogen and at least one of oxygen or carbon, and repeating the sequence to form the dielectric film comprising silicon carbon nitride or silicon carbon oxynitride on each of the substrates.

Abstract translation: 本文公开的实施方案通常涉及衬底的处理，更具体地涉及形成电介质膜的方法。 在一个实施例中，该方法包括将多个基板放置在处理室内并执行将基板暴露于包含硅的第一反应气体的顺序，然后将基板暴露于包含氮气的至少第二反应气体的等离子体 一个氧或碳，并且重复该顺序以在每个基板上形成包含氮化碳或氮氧化硅的电介质膜。

公开(公告)号：US20210319983A1

公开(公告)日：2021-10-14

申请号：US16846295

申请日：2020-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Pingyan LEI ,  Dien-Yeh WU ,  Xiao Ming HE ,  Jennifer Y. SUN ,  Lei ZHOU ,  Takashi KURATOMI ,  Avgerinos V. GELATOS ,  Mei CHANG ,  Steven D. MARCUS

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/06 ,  C23C16/44 ,  C23C16/455

Abstract: Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.

公开(公告)号：US20150255324A1

公开(公告)日：2015-09-10

申请号：US14630757

申请日：2015-02-25

Applicant: Applied Materials, Inc.

Inventor： Ning LI ,  Victor NGUYEN ,  Mihaela BALSEANU ,  Li-Qun XIA ,  Steven D. MARCUS ,  Haichun YANG ,  Keiichi TANAKA

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/76224 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45551 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31116

Abstract: Embodiments disclosed herein generally relate to forming dielectric materials in high aspect ratio features. In one embodiment, a method for filling high aspect ratio trenches in one processing chamber is disclosed. The method includes placing a substrate inside a processing chamber, where the substrate has a surface having a plurality of high aspect ratio trenches and the surface is facing a gas/plasma distribution assembly. The method further includes performing a sequence of depositing a layer of dielectric material on the surface of the substrate and inside each of the plurality of trenches, where the layer of dielectric material is on a bottom and side walls of each trench, and removing a portion of the layer of dielectric material disposed on the surface of the substrate, where an opening of each trench is widened. The sequence repeats until the trenches are filled seamlessly with the dielectric material.

Abstract translation: 本文公开的实施方案通常涉及以高纵横比特征形成介电材料。 在一个实施例中，公开了一种用于在一个处理室中填充高纵横比沟槽的方法。 该方法包括将衬底放置在处理室内，其中衬底具有多个高纵横比沟槽的表面，并且该表面面向气体/等离子体分布组件。 该方法还包括执行在衬底的表面上以及多个沟槽的每一个内部沉积介电材料层的顺序，其中介电材料层位于每个沟槽的底部和侧壁上，并且移除部分 设置在基板的表面上的介电材料层，其中每个沟槽的开口被加宽。 该序列重复直到沟槽与电介质材料无缝填充。

公开(公告)号：US20240420926A1

公开(公告)日：2024-12-19

申请号：US18815687

申请日：2024-08-26

Applicant: Applied Materials, Inc.

Inventor： Michael R. RICE ,  Hanish Kumar PANAVALAPPIL KUMARANKUTTY ,  Steven D. MARCUS ,  Kirubanandan Naina SHANMUGAM ,  Sriharsha DHARMAPURA SATHYANARAYANAMURTHY ,  Madhukar KRISHNA ,  Shivaprakash Padadayya HIREMATH ,  Senthil Kumar NATTAMAI SUBRAMANIAN ,  Sankar Menon CHERUBALA PATHAYAPURA

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46

Abstract: Methods and apparatus for coating processing reactor component parts are provided herein. In some embodiments, a method for coating a part via atomic layer deposition includes: fastening a workpiece to be coated to an interior volume facing portion of a part coating reactor; and performing an ALD process on the fastened workpiece within the part coating reactor.

公开(公告)号：US20240117491A1

公开(公告)日：2024-04-11

申请号：US17962378

申请日：2022-10-07

Applicant: Applied Materials, Inc.

Inventor： Hanish Kumar PANAVALAPPIL KUMARANKUTTY ,  Yogesh TOMAR ,  Nikshep M. PATIL ,  Hari Venkatesh RAJENDRAN ,  Kirubanandan Naina SHANMUGAM ,  Gayatri NATU ,  Mahesh ARCOT ,  Senthil Kumar NATTAMAI SUBRAMANIAN ,  Steven D. MARCUS ,  Michael R. RICE

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45544 ,  C23C16/4412 ,  C23C16/45557

Abstract: Embodiments of an apparatus for coating a plurality of gas lines are provided herein. In some embodiments, an apparatus for coating a plurality of gas lines via an ALD process includes: an oven having an enclosure that defines an interior volume configured to house the plurality of gas lines, the enclosure having a door configured for transferring the plurality of gas lines into and out of the interior volume; a plurality of inlet ports disposed through a first wall of the enclosure; a plurality of exhaust ports disposed through a second wall of the enclosure; a fluid panel disposed outside of the oven and coupled to the plurality of inlet ports via corresponding ones of a plurality of fluid distribution assemblies; and a foreline disposed outside of the oven and coupled to the plurality of exhaust ports.

公开(公告)号：US20230074149A1

公开(公告)日：2023-03-09

申请号：US17470294

申请日：2021-09-09

Applicant: Applied Materials, Inc.

Inventor： Michael R. RICE ,  Hanish Kumar PANAVALAPPIL KUMARANKUTTY ,  Steven D. MARCUS ,  Kirubanandan Naina SHANMUGAM ,  Sriharsha DHARMAPURA SATHYANARAYANAMURTHY ,  Madhukar KRISHNA ,  Shivaprakash Padadayya HIREMATH ,  Senthil Kumar NATTAMAI SUBRAMANIAN ,  Sankar Menon CHERUBALA PATHAYAPURA

IPC: C23C16/455

Abstract: Methods and apparatus for coating processing reactor component parts are provided herein. In some embodiments, a part coating reactor includes: a lower body and a lid assembly that together define and enclose an interior volume; one or more heaters disposed in the lid assembly; one or more coolant channels disposed in the lid assembly to flow a heat transfer medium therethrough; a plurality of gas passages disposed through the lid assembly to facilitate providing one or more gases to the interior volume, wherein the plurality of gas passages include a plurality of fluidly independent plenums disposed in the lid assembly; and one or more mounting brackets to facilitate coupling a workpiece to the lid assembly.