公开(公告)号：US20040190215A1

公开(公告)日：2004-09-30

申请号：US10767792

申请日：2004-01-28

申请人： Applied Materials, Inc.

发明人： Edwin C. Weldon ,  Kenneth S. Collins ,  Arik Donde ,  Brian Lue ,  Dan Maydan ,  Robert J. Steger ,  Timothy Dyer ,  Ananda H. Kumar ,  Alexander M. Veytser ,  Kadthala R. Narendrnath ,  Semyon L. Kats ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Dennis S. Grimard

IPC分类号： H02H001/00

CPC分类号： H01J37/321 ,  C23C16/4586 ,  H01J2237/2001 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck comprises a dielectric member comprising (i) a first layer comprising a semiconductive material, and (ii) a second layer over the first layer, the second layer comprising an insulative material. The insulative material has a higher electrical resistance than the semiconductive material. An electrode in the dielectric member is chargeable to generate an electrostatic force. The chuck is useful to hold substrates, such as semiconductor wafers, during their processing in plasma processes.

摘要翻译： 静电卡盘包括电介质构件，其包括（i）包含半导体材料的第一层，和（ii）第一层上的第二层，第二层包括绝缘材料。 绝缘材料具有比半导体材料更高的电阻。 电介质构件中的电极可充电以产生静电力。 卡盘在等离子体工艺中的处理期间用于保持诸如半导体晶片的基板。

公开(公告)号：US20030189232A1

公开(公告)日：2003-10-09

申请号：US10118864

申请日：2002-04-09

申请人： APPLIED MATERIALS, INC.

发明人： Kam Law ,  Quan Yuan Shang ,  William Reid Harshbarger ,  Dan Maydan

IPC分类号： H01L021/00 ,  H01L023/62

CPC分类号： H01L29/66757 ,  H01L29/66765 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of passivation layer deposition using a cyclical deposition process is described. The cyclical deposition process may comprise alternately adsorbing a silicon-containing precursor and a reactant gas on a substrate structure. Thin film transistors, such as a bottom-gate transistor or a top-gate transistor, including a silicon-containing passivation layer, may be formed using such cyclical deposition techniques.

摘要翻译： 描述了使用循环沉积工艺的钝化层沉积的方法。 循环沉积工艺可以包括在衬底结构上交替地吸附含硅前体和反应气体。 可以使用这种循环沉积技术来形成包括含硅钝化层的诸如底栅晶体管或顶栅晶体管的薄膜晶体管。

公开(公告)号：US20030186561A1

公开(公告)日：2003-10-02

申请号：US10254627

申请日：2002-09-24

申请人： Applied Materials, Inc.

发明人： Kam S. Law ,  Quanyuan Shang ,  William R. Harshbarger ,  Dan Maydan ,  Soo Young Choi ,  Beom Soo Park ,  Sanjay Yadav ,  John M. White

IPC分类号： H01L021/31 ,  H01L021/469

CPC分类号： C23C16/45542 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3143 ,  H01L21/31612 ,  H01L21/31683 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/32105 ,  H01L21/3211 ,  H01L29/66765

摘要： A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.

摘要翻译： 描述了膜层沉积的方法。 使用循环沉积工艺沉积膜层。 循环沉积过程基本上由一种或多种工艺气体的连续流动以及前体和能量的交替脉冲组成在衬底结构上形成膜。

公开(公告)号：US20020029973A1

公开(公告)日：2002-03-14

申请号：US09797040

申请日：2001-02-28

申请人： Applied Materials, Inc.

发明人： Dan Maydan

IPC分类号： C25D005/00 ,  C25D017/10 ,  C25D009/06 ,  C25D011/26

CPC分类号： C25D7/123 ,  C25D17/001 ,  C25D17/10

摘要： An anode is configured to be used within a metal film plating apparatus. The anode has a substantially planar electric field generating portion and an electrolyte solution chemical reaction portion. The planar electric field generating portion is coated with an inert material that is impervious to the electrolyte solution. In one embodiment, the anode is formed as a perforated anode. In one aspect, the electric field generating portion is formed contiguous with the electrolyte solution chemical reaction portion. In another aspects, the planar electric field generating portion is formed as a distinct member from the electrolyte solution chemical reaction portion.

摘要翻译： 阳极构造成用于金属镀膜设备中。 阳极具有大致平面的电场产生部分和电解质溶液化学反应部分。 平面电场产生部分涂覆有不透电解质溶液的惰性材料。 在一个实施例中，阳极形成为穿孔阳极。 一方面，电场产生部分与电解质溶液化学反应部分相邻形成。 在另一方面，平面电场产生部分形成为与电解质溶液化学反应部分不同的部件。

公开(公告)号：US20040114853A1

公开(公告)日：2004-06-17

申请号：US10623666

申请日：2003-07-21

申请人： APPLIED MATERIALS, INC.

发明人： Claes Bjorkman ,  Lawrence C. West ,  Dan Maydan ,  Samuel Broydo

IPC分类号： G02B006/12

CPC分类号： G02B6/43 ,  G02B6/12 ,  G02B6/12004 ,  G02B6/30 ,  G02B6/4204 ,  G02B6/4214 ,  G02B6/4245 ,  G02B6/4257 ,  G02B6/4274 ,  G02B6/4283 ,  H01L21/84 ,  H01L27/1203

摘要： An article of manufacture comprising an optical-ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconductor layer, and a second semiconductor layer on top of the insulating layer, wherein the second semiconductor layer has a top surface and is laterally divided into two regions including a first region and a second region, the top surface of the first region being of a quality that is sufficient to permit microelectronic circuitry to be formed therein and the second region including an optical signal distribution circuit formed therein, the optical signal distribution circuit made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuit to be fabricated in the first region of the second semiconductor layer.

摘要翻译： 一种制造方法，包括由第一半导体层制成的光学就绪衬底，在第一半导体层的顶部上的绝缘层和在绝缘层的顶部上的第二半导体层，其中第二半导体层具有顶表面和 横向分为包括第一区域和第二区域的两个区域，第一区域的顶表面具有足以允许在其中形成微电子电路的质量，并且第二区域包括其中形成的光信号分配电路， 所述光信号分配电路由互连的半导体光子元件组成并且被设计成向要在第二半导体层的第一区域中制造的微电子电路提供信号。

公开(公告)号：US20040013338A1

公开(公告)日：2004-01-22

申请号：US10280505

申请日：2002-10-25

申请人： Applied Materials, Inc.

发明人： Claes Bjorkman ,  Lawrence C. West ,  Dan Maydan ,  Samuel Broydo

IPC分类号： G02B006/12

CPC分类号： G02B6/12004 ,  G02B6/12 ,  G02B6/30 ,  G02B6/4214 ,  G02B6/4245 ,  G02B6/4257 ,  G02B6/4274 ,  G02B6/4283 ,  G02B6/43

摘要： An article of manufacture comprising an optical ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconductor layer, and a second semiconductor layer on top of the insulating layer, wherein the second semiconductor layer has a top surface and is laterally divided into two regions including a first region and a second region, the top surface of the first region being of a quality that is sufficient to permit microelectronic circuitry to be formed therein and the second region including an optical signal distribution circuit formed therein, the optical signal distribution circuit made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuit to be fabricated in the first region of the second semiconductor layer.

摘要翻译： 一种制品，包括由第一半导体层制成的光学就绪衬底，在第一半导体层的顶部上的绝缘层和在绝缘层的顶部上的第二半导体层，其中第二半导体层具有顶表面，并且是 横向分为包括第一区域和第二区域的两个区域，第一区域的顶表面的质量足以允许在其中形成微电子电路，并且第二区域包括其中形成的光信号分配电路， 光信号分配电路由互连的半导体光子元件组成，并被设计为向要在第二半导体层的第一区域中制造的微电子电路提供信号。

公开(公告)号：US20020084192A1

公开(公告)日：2002-07-04

申请号：US10053533

申请日：2002-01-16

申请人： Applied Materials, Inc.

发明人： Dan Maydan ,  Ashok K. Sinha

IPC分类号： C25D005/10 ,  C25D005/02

CPC分类号： H01L21/76843 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76873

摘要： The present invention generally provides a method and an apparatus for forming a doped metal film on a conductive substrate. In one aspect of the invention, the deposition process comprises first depositing a phosphorus doped seed layer on a conductive substrate, and then depositing a conductive metal layer on the phosphorus doped seed layer to form a conductive film. In another aspect, the invention provides a method of processing a substrate including depositing a dielectric layer on a substrate, etching a feature into the substrate, depositing a conductive layer in the feature, depositing a phosphorus doped seed layer on the conductive barrier layer, and depositing a conductive metal layer on the phosphorus doped seed layer. In another aspect of the invention, an apparatus is provided that includes a phosphorus doped anode used for depositing a phosphorus doped metal film, such as a seed layer, in an electrochemical deposition process. The phosphorus doped anode preferably includes an enclosure providing for flow of an electrolyte therethrough, a phosphorus doped metal disposed within the enclosure, and an electrode disposed through the enclosure and in electrical connection with the phosphorus doped metal. Another aspect of the invention provides an apparatus for electrochemical deposition of a phosphorus doped metal onto a substrate includes a substrate holder adapted to hold the substrate in a position where the substrate plating surface is exposed to an electrolyte in an electrolyte container, a cathode electrically contacting the substrate plating surface, an electrolyte container having an electrolyte inlet, an electrolyte outlet and an opening adapted to receive the substrate plating surface, and a phosphorus doped anode electrically connected to the electrolyte.

摘要翻译： 本发明通常提供一种在导电基板上形成掺杂金属膜的方法和装置。 在本发明的一个方面，沉积工艺包括首先在导电衬底上沉积磷掺杂种子层，然后在磷掺杂种子层上沉积导电金属层以形成导电膜。 另一方面，本发明提供一种处理衬底的方法，包括在衬底上沉积电介质层，将特征蚀刻到衬底中，在特征中沉积导电层，在导电阻挡层上沉积磷掺杂种子层，以及 在磷掺杂种子层上沉积导电金属层。 在本发明的另一方面，提供一种装置，其包括用于在电化学沉积工艺中沉积磷掺杂金属膜（例如种子层）的磷掺杂阳极。 磷掺杂阳极优选地包括提供电解质流过的外壳，设置在外壳内的磷掺杂金属，以及通过外壳设置并与磷掺杂金属电连接的电极。 本发明的另一方面提供了一种用于将磷掺杂金属电化学沉积到衬底上的设备，包括：衬底保持器，其适于将衬底保持在电镀液容器中的电解质暴露于衬底镀层表面的位置，阴极电接触 基板电镀表面，具有电解质入口的电解质容器，电解液出口和适于接收基板电镀表面的开口，以及电连接到电解质的磷掺杂阳极。

公开(公告)号：US20040166612A1

公开(公告)日：2004-08-26

申请号：US10786410

申请日：2004-02-24

申请人： Applied Materials, Inc.

发明人： Dan Maydan ,  Randir P.S. Thakur ,  Kenneth S. Collins ,  Amir Al-Bayati ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01L021/00 ,  H01L021/84 ,  H01L021/322

CPC分类号： H01J37/321 ,  H01J2237/0825 ,  Y10S438/977

摘要： A method of fabricating a silicon-on-insulator structure having a silicon surface layer in a semiconductor workpiece, is carried out by maintaining the workpiece at an elevated temperature and producing an oxygen-containing plasma in the chamber while applying a bias to the workpiece and setting the bias to a level corresponding to an implant depth in the workpiece below the silicon surface layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece having an oxygen concentration distribution generally centered at the implant depth and having a finite oxygen concentration in the silicon surface layer. The oxygen concentration in the silicon surface layer is then reduced to permit epitaxial silicon deposition.

摘要翻译： 在半导体工件中制造具有硅表面层的绝缘体上硅结构的方法通过将工件保持在升高的温度下并在室中产生含氧等离子体，同时向工件施加偏压， 将所述偏压设置为与待注入氧原子的硅表面层下方的所述工件中的植入深度相对应的水平，由此在所述工件中形成氧注入层，所述氧注入层通常以注入深度为中心 并且在硅表面层中具有有限的氧浓度。 然后减小硅表面层中的氧浓度以允许外延硅沉积。

公开(公告)号：US20040121605A1

公开(公告)日：2004-06-24

申请号：US10325353

申请日：2002-12-19

申请人： Applied Materials, Inc.

发明人： Dan Maydan ,  Randhir Thakur

IPC分类号： H01L021/311

CPC分类号： H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/28247 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/84

摘要： A method and apparatus for the formation of oxide in a manner having a planarizing effect on underlying material, e.g., silicon. In particular, an oxide having a nonuniform thickness profile is grown on the underlying material. The nonuniform thickness profile of the oxide is selected according to the nonuniform profile of the underlying material. Subsequent removal of the oxide leaves behind a planarized surface of the underlying material, as compared to the pre-oxidized surface.

摘要翻译： 用于以对下层材料例如硅具有平坦化作用的方式形成氧化物的方法和装置。 特别地，在下层材料上生长具有不均匀厚度分布的氧化物。 根据下层材料的不均匀轮廓选择氧化物的不均匀厚度分布。 与预氧化表面相比，随后将氧化物除去在下面的材料的平坦化表面之后。

公开(公告)号：US20030138560A1

公开(公告)日：2003-07-24

申请号：US10278615

申请日：2002-10-22

申请人： Applied Materials, Inc.

发明人： Jun Zhao ,  David Quach ,  Timothy Weidman ,  Rick J. Roberts ,  Farhad Moghadam ,  Dan Maydan

IPC分类号： B05D005/12 ,  C23C016/00 ,  B05D003/02

CPC分类号： H01L21/67109 ,  Y10S414/139

摘要： An apparatus for processing substrates is disclosed. In one embodiment, the apparatus includes a housing and a plurality of stacked cell structures in the housing. An actuator is adapted to move the plurality of stacked cell structures inside of the housing while substrates in the stacked cell structures are being heated.

摘要翻译： 公开了一种处理衬底的设备。 在一个实施例中，该装置包括外壳和壳体中的多个堆叠的电池结构。 致动器适于在堆叠的电池结构中的衬底被加热的同时将多个堆叠的电池结构移动到壳体内部。