ELECTROSTATIC CHUCK
    2.
    发明公开
    ELECTROSTATIC CHUCK 审中-公开

    公开(公告)号:US20240297063A1

    公开(公告)日:2024-09-05

    申请号:US18662796

    申请日:2024-05-13

    Abstract: Electrostatic chucks and methods of forming electrostatic chucks are disclosed. Exemplary electrostatic chucks include a ceramic body, a device embedded within the ceramic body, and an interface layer formed overlying the device. Exemplary methods include providing ceramic precursor material within a mold, providing a device, coating the device with an interface material to form a coated device, placing the coated device on or within the ceramic precursor material, and sintering the ceramic precursor material to form the electrostatic chuck and an interface layer between the device and ceramic material formed during the step of sintering.

    Electrostatic chuck
    4.
    发明授权

    公开(公告)号:US11996312B2

    公开(公告)日:2024-05-28

    申请号:US17570232

    申请日:2022-01-06

    Abstract: Electrostatic chucks and methods of forming electrostatic chucks are disclosed. Exemplary electrostatic chucks include a ceramic body, a device embedded within the ceramic body, and an interface layer formed overlying the device. Exemplary methods include providing ceramic precursor material within a mold, providing a device, coating the device with an interface material to form a coated device, placing the coated device on or within the ceramic precursor material, and sintering the ceramic precursor material to form the electrostatic chuck and an interface layer between the device and ceramic material formed during the step of sintering.

    ELECTROSTATIC CHUCK
    6.
    发明申请

    公开(公告)号:US20220223453A1

    公开(公告)日:2022-07-14

    申请号:US17570232

    申请日:2022-01-06

    Abstract: Electrostatic chucks and methods of forming electrostatic chucks are disclosed. Exemplary electrostatic chucks include a ceramic body, a device embedded within the ceramic body, and an interface layer formed overlying the device. Exemplary methods include providing ceramic precursor material within a mold, providing a device, coating the device with an interface material to form a coated device, placing the coated device on or within the ceramic precursor material, and sintering the ceramic precursor material to form the electrostatic chuck and an interface layer between the device and ceramic material formed during the step of sintering.

    ARTICLE WITH A PROTECTIVE COATING
    7.
    发明公开

    公开(公告)号:US20230411198A1

    公开(公告)日:2023-12-21

    申请号:US18208421

    申请日:2023-06-12

    CPC classification number: H01L21/6833

    Abstract: Various embodiment of the present technology may provide an article formed from a ceramic material. The article may further include a protective coating overlying one or more surfaces of the article. The protective coating may include a first layer including aluminum and magnesium and a second layer including alumina, or alumina and magnesium oxide.

    SUBSTRATE SUPPORT STRUCTURES AND METHODS OF MAKING SUBSTRATE SUPPORT STRUCTURES

    公开(公告)号:US20230013637A1

    公开(公告)日:2023-01-19

    申请号:US17857344

    申请日:2022-07-05

    Abstract: A substrate support structure includes a substrate support structure body formed from a ceramic composite and having a first surface, a second surface spaced apart from the first surface, and a periphery spanning the first surface and the second surface of the substrate support structure body. The first surface, the second surface, and the periphery of the substrate support structure body are defined by the ceramic composite. The ceramic composite includes two or more of a (a) an aluminum nitride (AlN) constituent, (b) an aluminum oxynitride (Al2.81O3.56N0.44, AlON) constituent, (c) an alpha-alumina (α-Al2O3) constituent, (d) a yttrium alumina garnet (Y3Al5O12, YAG) constituent, (e) a yttrium alumina monoclinic (Y4Al2O9, YAM) constituent, (f) a yttrium alumina perovskite (YAlO3, YAP) constituent, and (g) a yttrium oxide (Y2O3) constituent. Semiconductor processing systems and methods of making substrate support structures are also described.

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