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    Sensor and lithographic apparatus
    1.
    发明授权
    Sensor and lithographic apparatus 有权
    传感器和光刻设备

    公开(公告)号：US09331117B2

    公开(公告)日：2016-05-03

    申请号：US14439481

    申请日：2013-10-09

    Applicant: ASML Netherlands B.V.

    Inventor： Stoyan Nihtianov ,  Haico Victor Kok ,  Martijn Gerard Dominique Wehrens

    IPC: H01L21/00 ,  H01L27/146 ,  G03F7/20 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

    CPC classification number: H01L27/1464 ,  G03F7/70558 ,  G03F7/7085 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804

    Abstract: A backside illuminated sensor comprising a supporting substrate, a semiconductor layer which comprises a photodiode comprising a region of n-doped semiconductor provided at a first surface of the semiconductor layer, and a region of p-doped semiconductor, wherein a depletion region is formed between the region of n-doped semiconductor and the region of p-doped semiconductor, and a layer of p-doping protective material provided on a second surface of the semiconductor layer, wherein the first surface of the semiconductor layer is fixed to a surface of the supporting substrate.

    Abstract translation: 一种背面照明传感器，包括支撑衬底，半导体层，其包括光电二极管，所述光电二极管包括设置在所述半导体层的第一表面处的n掺杂半导体的区域，以及p掺杂半导体的区域， n掺杂半导体的区域和p掺杂半导体的区域，以及设置在半导体层的第二表面上的p掺杂保护材料层，其中半导体层的第一表面固定到 支撑衬底。

    Measurement systems, lithographic apparatus, device manufacturing method and a method of measuring
    3.
    发明授权
    Measurement systems, lithographic apparatus, device manufacturing method and a method of measuring 有权

    公开(公告)号：US10678147B2

    公开(公告)日：2020-06-09

    申请号：US15738695

    申请日：2016-05-31

    Applicant: ASML Netherlands B.V.

    Inventor： Stoyan Nihtianov

    IPC: G03F7/20 ,  G01N27/90 ,  G01D5/20 ,  G01B7/02

    Abstract: A measurement system for measuring a position and/or displacement of an object (40), the measurement system comprising a sensor (20) and a target (45), the sensor comprising an electromagnet (21); a driving circuit (24) configured to drive the electromagnet to generate an alternating magnetic field (AMF); a measuring circuit (25) configured to measure an electrical impedance parameter of the electromagnet; the target being located on a surface (41) of the object that faces the sensor, wherein the target comprises a graphene layer (46), and wherein, in use, when the alternating magnetic field interacts with the target, the alternating magnetic field changes (RMF), altering the electrical impedance parameter of the electromagnet.

    Semiconductor detector and method of fabricating same
    5.
    发明授权
    Semiconductor detector and method of fabricating same 有权

    公开(公告)号：US11843069B2

    公开(公告)日：2023-12-12

    申请号：US16703294

    申请日：2019-12-04

    Applicant: ASML Netherlands B.V.

    Inventor： Gianpaolo Lorito ,  Stoyan Nihtianov ,  Xinqing Liang ,  Kenichi Kanai

    IPC: H01L31/115 ,  H01J37/244 ,  H01J37/28

    CPC classification number: H01L31/115 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/2441

    Abstract: The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.

    Sensor and Lithographic Apparatus
    7.
    发明申请
    Sensor and Lithographic Apparatus 有权
    传感器和平版印刷设备

    公开(公告)号：US20150294998A1

    公开(公告)日：2015-10-15

    申请号：US14439481

    申请日：2013-10-09

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Stoyan Nihtianov ,  Haico Victor Kok ,  Martijn Gerard Dominique Wehrens

    IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/028

    CPC classification number: H01L27/1464 ,  G03F7/70558 ,  G03F7/7085 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804

    Abstract: A backside illuminated sensor comprising a supporting substrate, a semiconductor layer which comprises a photodiode comprising a region of n-doped semiconductor provided at a first surface of the semiconductor layer, and a region of p-doped semiconductor, wherein a depletion region is formed between the region of n-doped semiconductor and the region of p-doped semiconductor, and a layer of p-doping protective material provided on a second surface of the semiconductor layer, wherein the first surface of the semiconductor layer is fixed to a surface of the supporting substrate.

    Abstract translation: 一种背面照明传感器，包括支撑衬底，半导体层，其包括光电二极管，所述光电二极管包括设置在所述半导体层的第一表面处的n掺杂半导体的区域，以及p掺杂半导体的区域， n掺杂半导体的区域和p掺杂半导体的区域，以及设置在半导体层的第二表面上的p掺杂保护材料层，其中半导体层的第一表面固定到 支撑衬底。

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