公开(公告)号：US20220026810A1

公开(公告)日：2022-01-27

申请号：US17297171

申请日：2019-11-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Nicolaas Petrus Marcus BRANTJES ,  Matthijs COX ,  Boris MENCHTCHIKOV ,  Cyrus Emil TABERY ,  Youping ZHANG ,  Yi ZOU ,  Chenxi LIN ,  Yana CHENG ,  Simon Philip Spencer HASTINGS ,  Maxim Philippe Frederic GENIN

IPC: G03F7/20 ,  G03F9/00 ,  G05B13/02

Abstract: A method for determining a correction relating to a performance metric of a semiconductor manufacturing process, the method including: obtaining a set of pre-process metrology data; processing the set of pre-process metrology data by decomposing the pre-process metrology data into one or more components which: a) correlate to the performance metric; or b) are at least partially correctable by a control process which is part of the semiconductor manufacturing process; and applying a trained model to the processed set of pre-process metrology data to determine the correction for the semiconductor manufacturing process.

公开(公告)号：US20210389677A1

公开(公告)日：2021-12-16

申请号：US17295193

申请日：2019-11-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Chenxi LIN ,  Cyrus Emil TABERY ,  Hakki Ergün CEKLI ,  Simon Philip Spencer HASTINGS ,  Boris MENCHTCHIKOV ,  Yi ZOU ,  Yana CHENG ,  Maxime Philippe Frederic GENIN ,  Tzu-Chao CHEN ,  Davit HARUTYUNYAN ,  Youping ZHANG

IPC: G03F7/20 ,  G05B13/02 ,  G05B19/418 ,  H01L21/66

Abstract: A method for determining a root cause affecting yield in a process for manufacturing devices on a substrate, the method including: obtaining yield distribution data including a distribution of a yield parameter across the substrate or part thereof; obtaining sets of metrology data, each set including a spatial variation of a process parameter over the substrate or part thereof corresponding to a different layer of the substrate; comparing the yield distribution data and metrology data based on a similarity metric describing a spatial similarity between the yield distribution data and an individual set out of the sets of the metrology data; and determining a first similar set of metrology data out of the sets of metrology data, being the first set of metrology data in terms of processing order for the corresponding layers, which is determined to be similar to the yield distribution data.

公开(公告)号：US20250028255A1

公开(公告)日：2025-01-23

申请号：US18714728

申请日：2022-11-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Chenxi LIN ,  Steven George HANSEN ,  Xin LEI ,  Yi ZOU

IPC: G03F7/00

Abstract: A method for determining values of design variables of a lithographic process based on a predicted failure rate for printing a target pattern on a substrate using a lithographic apparatus. The method includes obtaining an image corresponding to a target pattern to be printed on a substrate using a lithographic apparatus, wherein the image is generated based on a set of values of design variables of the lithographic apparatus or a lithographic process; determining image properties, the image properties representative of a pattern printed on the substrate, the pattern corresponding to the target pattern; predicting a failure rate in printing the pattern on the substrate based on the image properties; and determining a specified value of a specified design variable based on the failure rate, the specified value to be used in the lithographic process to print the target pattern on the substrate.

公开(公告)号：US20220011728A1

公开(公告)日：2022-01-13

申请号：US17293373

申请日：2019-10-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Youping ZHANG ,  Boris MENCHTCHIKOV ,  Cyrus Emil TABERY ,  Yi ZOU ,  Chenxi LIN ,  Yana CHENG ,  Simon Philip Spencer HASTINGS ,  Maxime Philippe Frederic GENIN

IPC: G05B13/04 ,  G05B13/02 ,  G06F30/27 ,  G06F30/10 ,  G06N3/08 ,  G06N3/04

Abstract: A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.

公开(公告)号：US20230273529A1

公开(公告)日：2023-08-31

申请号：US18012222

申请日：2021-06-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Satej Subhash KHEDEKAR ,  Henricus Jozef CASTELIJNS ,  Anjan Prasad GANTAPARA ,  Stephen Henry BOND ,  Seyed Iman MOSSAVAT ,  Alexander YPMA ,  Gerald DICKER ,  Ewout Klaas STEINMEIER ,  Chaoqun GUO ,  Chenxi LIN ,  Hongwei CHEN ,  Zhaoze LI ,  Youping ZHANG ,  Yi ZOU ,  Koos VAN BERKEL ,  Joost Johan BOLDER ,  Arnaud HUBAUX ,  Andriy Vasyliovich HLOD ,  Juan Manuel GONZALEZ HUESCA ,  Frans Bernard AARDEN

IPC: G03F7/20

CPC classification number: G03F7/70525 ,  G03F7/70633 ,  G03F7/7065

Abstract: Generating a control output for a patterning process is described. A control input is received. The control input is for controlling the patterning process. The control input includes one or more parameters used in the patterning process. The control output is generated with a trained machine learning mod& based on the control input, The machine learning model is trained with training data generated from simulation of the patterning process and/or actual process data, The training data includes 1) a plurality of training control inputs corresponding to a plurality of operational conditions of the patterning process, where the plurality of operational conditions of the patterning process are associated with operational condition specific behavior of the patterning process over time, and 2) training control outputs generated using a physical model based on the training control inputs.

公开(公告)号：US20220252988A1

公开(公告)日：2022-08-11

申请号：US17603870

申请日：2020-03-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  David Frans Simon DECKERS ,  Simon Philip Spencer HASTINGS ,  Jeffrey Thomas ZIEBARTH ,  Samee Ur REHMAN ,  Davit HARUTYUNYAN ,  Chenxi LIN ,  Yana CHENG

IPC: G03F7/20 ,  G03F1/36

Abstract: A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.

公开(公告)号：US20210325788A1

公开(公告)日：2021-10-21

申请号：US17363057

申请日：2021-06-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander YPMA ,  Cyrus Emil TABERY ,  Simon Hendrik Celine VAN GORP ,  Chenxi LIN ,  Dag SONNTAG ,  Hakki Ergün CEKLI ,  Ruben ALVAREZ SANCHEZ ,  Shih-Chin LIU ,  Simon Philip Spencer HASTINGS ,  Boris MENCHTCHIKOV ,  Christiaan Theodoor DE RUITER ,  Peter TEN BERGE ,  Michael James LERCEL ,  Wei DUAN ,  Pierre-Yves Jerome Yvan GUITTET

IPC: G03F7/20

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

公开(公告)号：US20250044710A1

公开(公告)日：2025-02-06

申请号：US18714547

申请日：2022-12-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Jiyou FU ,  Jing SU ,  Chenxi LIN ,  Jiao LIANG ,  Guangqing CHEN ,  Yi ZOU

IPC: G03F7/00 ,  G03F9/00 ,  G06T7/00 ,  G06T7/33 ,  H01L21/66

Abstract: A method of image template matching for multiple process layers of, for example, semiconductor substrate with an adaptive weight map is described. An image template is provided with a weight map, which is adaptively updated based during template matching based on the position of the image template on the image. A method of template matching a grouped pattern or artifacts in a composed template is described, wherein the pattern comprises deemphasized areas weighted less than the image templates. A method of generating an image template based on a synthetic image is described. The synthetic image can be generated based on process and image modeling. A method of selecting a grouped pattern or artifacts and generating a composed template is described. A method of per layer image template matching is described.

公开(公告)号：US20240069450A1

公开(公告)日：2024-02-29

申请号：US18267734

申请日：2021-12-08

Applicant: ASML Netherlands B.V.

Inventor： Nabeel Noor MOIN ,  Chenxi LIN ,  Yi ZOU

IPC: G03F7/00 ,  G06N20/20

CPC classification number: G03F7/7065 ,  G03F7/706841 ,  G06N20/20

Abstract: A method and apparatus for training a defect location prediction model to predict a defect for a substrate location is disclosed. A number of datasets having data regarding process-related parameters for each location on a set of substrates is received. Some of the locations have partial datasets in which data regarding one or more process-related parameters is absent. The datasets are processed to generate multiple parameter groups having data for different sets of process-related parameters. For each parameter group, a sub-model of the defect location prediction model is created based on the corresponding set of process-related parameters and trained using data from the parameter group. A trained sub-model(s) may be selected based on process-related parameters available in a candidate dataset and a defect prediction may be generated for a location associated with the candidate dataset using the selected sub-model.

公开(公告)号：US20230401694A1

公开(公告)日：2023-12-14

申请号：US18033786

申请日：2021-11-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Chenxi LIN ,  Yi ZOU ,  Tanbir HASAN ,  Huina XU ,  Ren-Jay KOU ,  Nabeel Noor MOIN ,  Kourosh NAFISI

IPC: G06T7/00

CPC classification number: G06T7/001 ,  G06T2207/20081 ,  G06T2207/30148

Abstract: A method and apparatus for identifying locations to be inspected on a substrate is disclosed. A defect location prediction model is trained using a training dataset associated with other substrates to generate a prediction of defect or non-defect and a confidence score associated with the prediction for each of the locations based on process-related data associated with the substrates. Those of the locations determined by the defect location prediction model as having confidences scores satisfying a confidence threshold are added to a set of locations to be inspected by an inspection system. After the set of locations are inspected, the inspection results data is obtained, and the defect location prediction model is incrementally trained by using the inspection results data and process-related data for the set of locations as training data.