摘要:
Semiconductor die packaged with air core inductors (ACIs) and magnetic core inductors (MCIs), or with multiple MCIs, are described. In a first example, a semiconductor package includes a semiconductor die, one or more air core inductors (ACIs) coupled to the semiconductor die, and one or more magnetic core inductors (MCIs) coupled to the semiconductor die. In a second example, a semiconductor package includes a semiconductor die, a first magnetic core inductor (MCI) coupled to the semiconductor die and having a first saturation current, and a second MCI coupled to the semiconductor die and having a second, different, saturation current.
摘要:
Embodiments of the invention include a packaged device with transmission lines that have an extended thickness, and methods of making such device. According to an embodiment, the packaged device may include a first dielectric layer and a first transmission line formed over the first dielectric layer. Embodiments may then include a second dielectric layer formed over the transmission line and the first dielectric layer. According to an embodiment, a first line via may be formed through the second dielectric layer and electrically coupled to the first transmission line. In some embodiments, the first line via extends substantially along the length of the first transmission line.
摘要:
Embodiments of the invention include inductors integrated into a package substrate that have increased thicknesses due to the use of shaped vias, and methods of forming such packages. In an embodiment of the invention an inductor may be formed in a package substrate may include a first inductor line formed on the package substrate. In some embodiments, a shaped via may be formed over the first inductor line. Additional embodiments may include a dielectric layer that is formed over the package substrate, the first inductor line and around the shaped via. In one embodiment, a second inductor line may also be formed over the shaped via. Some embodiments of the invention may include an inductor that is a spiral inductor.
摘要:
Semiconductor packages including magnetic core inductor (MCI) structures for integrated voltage regulators are described. In an example, a semiconductor package includes a package substrate and a semiconductor die coupled to a first surface of the package substrate. The semiconductor die has a first plurality of metal-insulator-metal (MIM) capacitor layers thereon. The semiconductor package also includes a magnetic core inductor (MCI) die coupled to a second surface of the package substrate. The MCI die includes one or more slotted inductors and has a second plurality of MIM capacitor layers thereon.
摘要:
Semiconductor packages including magnetic core inductor (MCI) structures for integrated voltage regulators are described. In an example, a semiconductor package includes a package substrate and a semiconductor die coupled to a first surface of the package substrate. The semiconductor die has a first plurality of metal-insulator-metal (MIM) capacitor layers thereon. The semiconductor package also includes a magnetic core inductor (MCI) die coupled to a second surface of the package substrate. The MCI die includes one or more slotted inductors and has a second plurality of MIM capacitor layers thereon.
摘要:
Reliable microstrip routing arrangements for electronics components are described. In an example, a semiconductor apparatus includes a semiconductor die having a surface with an integrated circuit thereon coupled to contact pads of an uppermost metallization layer of a semiconductor package substrate by a plurality of conductive contacts. A plurality of discrete metal planes is disposed at the uppermost metallization layer of the semiconductor package substrate, each metal plane located, from a plan view perspective, at a corner of a perimeter of the semiconductor die. Microstrip routing is disposed at the uppermost metallization layer of the semiconductor package substrate, from the plan view perspective, outside of the perimeter of the semiconductor die.
摘要:
Reliable microstrip routing arrangements for electronics components are described. In an example, a semiconductor apparatus includes a semiconductor die having a surface with an integrated circuit thereon coupled to contact pads of an uppermost metallization layer of a semiconductor package substrate by a plurality of conductive contacts. A plurality of discrete metal planes is disposed at the uppermost metallization layer of the semiconductor package substrate, each metal plane located, from a plan view perspective, at a corner of a perimeter of the semiconductor die. Microstrip routing is disposed at the uppermost metallization layer of the semiconductor package substrate, from the plan view perspective, outside of the perimeter of the semiconductor die.
摘要:
Reliable microstrip routing arrangements for electronics components are described. In an example, a semiconductor apparatus includes a semiconductor die having a surface with an integrated circuit thereon coupled to contact pads of an uppermost metallization layer of a semiconductor package substrate by a plurality of conductive contacts. A plurality of discrete metal planes is disposed at the uppermost metallization layer of the semiconductor package substrate, each metal plane located, from a plan view perspective, at a corner of a perimeter of the semiconductor die. Microstrip routing is disposed at the uppermost metallization layer of the semiconductor package substrate, from the plan view perspective, outside of the perimeter of the semiconductor die.
摘要:
In a method for simulating electrical characteristics of a plurality of power planes, each power plane includes a plurality of geometric features. The geometric features of each power plane are projected onto a single planar construct. A polygonal mesh, including a plurality of pairs of interconnected nodes, that corresponds to the single planar construct is generated. The polygonal mesh is projected onto at least one power plane an equivalent circuit between each adjacent node of the plurality of interconnected nodes is projected onto the power plane. An equivalent capacitance is assigned between each node and a common ground planer. A finite element equation that includes a plurality of discrete terms is generated. The equation is solved, thereby determining the electrical characteristic value between each pair of adjacent nodes.
摘要:
In a method for simulating electrical characteristics of a plurality of power planes, each power plane includes a plurality of geometric features. The geometric features of each power plane are projected onto a single planar construct. A polygonal mesh, including a plurality of pairs of interconnected nodes, that corresponds to the single planar construct is generated. The polygonal mesh is projected onto at least one power plane an equivalent circuit between each adjacent node of the plurality of interconnected nodes is projected onto the power plane. An equivalent capacitance is assigned between each node and a common ground planer. A finite element equation that includes a plurality of discrete terms is generated. The equation is solved, thereby determining the electrical characteristic value between each pair of adjacent nodes.