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公开(公告)号：US5277942A
公开(公告)日：1994-01-11
申请号：US775092
申请日：1991-10-11
CPC分类号： G21B1/13 , Y02E30/128 , Y10T428/12535 , Y10T428/12611 , Y10T428/12924 , Y10T428/26
摘要： An insulating member has an insulating layer in the form of a thin ceramic plate made of at least one of SiC, Si.sub.3 N.sub.4, AlN and Al.sub.2 O.sub.3 ad having a thickness not less than 0.1 mm and not more than 2.0 mm, and cushioning layers provided on both sides of the insulating layer through brazing alloy for relieving thermal stress. An electric part can be made of such an insulating member. The insulating member is disposed between a conductive substrate and a conductive member and brazed thereto.
摘要翻译： 绝缘构件具有由SiC，Si 3 N 4，AlN和Al 2 O 3等中的至少一种制成的厚度不小于0.1mm且不大于2.0mm的薄陶瓷板形式的绝缘层，以及设置在两者上的缓冲层 通过用于缓解热应力的钎焊合金的绝缘层的侧面。 电气部件可以由这种绝缘构件制成。 绝缘构件设置在导电基板和导电构件之间并钎焊到其上。
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公开(公告)号：US5481081A
公开(公告)日：1996-01-02
申请号：US298713
申请日：1994-08-26
申请人： Akihiko Ikegaya , Naoji Fujimori
发明人： Akihiko Ikegaya , Naoji Fujimori
CPC分类号： C23C16/276 , C23C16/513 , H05H1/44
摘要： A DC plasma jet method enables us to synthesize diamond at a high speed by spraying an activated carbon-containing gas as a plasma jet to a substrate. Despite the high speed deposition, the method cannot synthesize a wide uniform diamond owing to the ununiformity of the jet and the restriction of sizes of torches. Uniform deposition of diamond on a wide substrate is a purpose of this invention.More than two anode-nozzles and more than one plasma torch are utilized. They are disposed with their center lines crossing at a point. An inert gas or hydrogen gas are supplied in the torches in order to excite inner arc plasma jets. Then the torches are applied a negative DC voltage. The anode-nozzles are applied a positive voltage and are supplied with an inert gas, hydrogen gas or both an inert gas and hydrogen gas. Outer transferable plasma jets are formed between the cathodes of torches as cathodes and the nozzles as anodes. The plasma arc jets are integrated into a unified plasma flame. The nozzles and the torches are moved or rotated in order to enlarge the plasma formation areas. A carbon-containing gas is supplied to confluences of the plasma jets from the cathode-torches and the anode-nozzles from gas supplying nozzles.
摘要翻译： DC等离子喷射法使得能够通过将含有活性炭的气体作为等离子体喷射喷射到基板上而高速合成金刚石。 尽管高速沉积，由于喷射不均匀性和焊枪尺寸的限制，该方法不能合成宽均匀的金刚石。 金刚石在宽基底上的均匀沉积是本发明的目的。 使用两个以上的阳极喷嘴和多于一个的等离子体焰炬。 他们的中心线处于一个点处。 在火炬中提供惰性气体或氢气，以激发内部电弧等离子体射流。 然后手电筒施加负直流电压。 阳极喷嘴施加正电压，并且供给惰性气体，氢气或惰性气体和氢气两者。 外部可转移等离子体射流形成在阴极之间的火炬阴极和喷嘴为阳极。 等离子体电弧射流被整合成统一的等离子火焰。 为了扩大等离子体形成区域，喷嘴和割炬被移动或旋转。 从阴极炬和来自气体供给喷嘴的阳极喷嘴的等离子体射流的汇合处供给含碳气体。
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公开(公告)号：US5370299A
公开(公告)日：1994-12-06
申请号：US41545
申请日：1993-04-02
CPC分类号： C04B41/009 , B23K20/025 , C04B41/5002 , C04B41/85 , H01L24/79 , H05K13/003
摘要： A bonding tool has a head portion made essentially of vapor-deposited diamond, wherein a principal diamond crystal plane forming a head face is a (111) plane. Such a head face has high hardness and a good wear resistance. In order to improve the toughness of a bonding head which is mainly made of vapor-deposited diamond, a portion or ply forming the head face consists essentially of high-purity diamond, and another portion or ply supporting the head face consists essentially of low-purity diamond. The head face has a high rigidity, while the portion supporting the head face has a high toughness. In order to provide a bonding head portion which is mainly made of vapor-deposited diamond with electrical conductivity, a first portion or ply forming a head face consists essentially of polycrystalline diamond containing a relatively small amount of dopant, and another portion or ply supporting the first portion or ply contains a large amount of dopant. The head portion having electrical conductivity can be heated by energization. In a tool employing a coating containing vapor-deposited diamond as a bonding head portion, the coating is formed by a compound of a metal or ceramics and vapor-deposited diamond, in order to improve the strength of the coating and adhesion to a tool substrate.
摘要翻译： 接合工具具有基本上由气相沉积金刚石制成的头部，其中形成头部面的主要金刚石晶体平面是（111）面。 这种头面具有高硬度和良好的耐磨性。 为了提高主要由气相沉积金刚石制成的接合头的韧性，形成头部面的部分或层基本上由高纯度的金刚石组成，并且支撑头部面的另一部分或层基本上由低熔点金刚石构成， 纯度钻石。 头部表面具有高刚性，而支撑头部面的部分具有高韧性。 为了提供主要由具有导电性的气相沉积金刚石制成的接合头部分，形成头部面的第一部分或第一部分基本上由含有相对少量掺杂剂的多晶金刚石组成，另一部分或层叠支撑 第一部分或第二部分含有大量的掺杂剂。 可以通过通电来加热具有导电性的头部。 在使用包含气相沉积金刚石作为粘合头部分的涂层的工具中，涂层由金属或陶瓷和气相沉积金刚石的化合物形成，以便提高涂层的强度和对工具基材的粘附 。
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公开(公告)号：US5079425A
公开(公告)日：1992-01-07
申请号：US639085
申请日：1991-01-09
申请人： Takahiro Imai , Tetsuo Yashiki , Naoji Fujimori
发明人： Takahiro Imai , Tetsuo Yashiki , Naoji Fujimori
IPC分类号： G01T1/26
CPC分类号： G01T1/26
摘要： A radiation detecting element comprising a pair of electrode and a semiconductor layer interposed between said pair of electrodes wherein said semiconductor layer comprises a polycrystal diamond having no grain boundary in a direction in which a voltage is applied, and an electric current flows through said semiconductor layer from one electrode to the other without crossing a grain boundary, which element has high sensitivity and a high response speed.
摘要翻译： 一种放射线检测元件，包括一对电极和插入在所述一对电极之间的半导体层，其中所述半导体层包括在施加电压的方向上没有晶界的多晶金刚石，并且电流流过所述半导体层 从一个电极到另一个电极不交叉晶界，该元件具有高灵敏度和高响应速度。
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公开(公告)号：US5964942A
公开(公告)日：1999-10-12
申请号：US494719
申请日：1995-06-26
摘要： No wide bulk diamond wafer exists at present. A wide diamond-coated wafer is proposed instead of the bulk diamond wafer. Diamond is heteroepitaxially deposited on a convex-distorted non-diamond single crystal substrate by a vapor phase deposition method. In an early step, a negative bias is applied to the substrate. In the case of a Si substrate, an intermediate layer of .beta.-SiC is first deposited on the Si substrate by supplying a low carbon concentration material gas. Then the carbon concentration is raised for making a diamond film. The convex-distorted wafer is stuck to a holder having a shaft which is capable of inclining to the holder. The wafer is pushed to a turn-table of a polishing machine. The convex diamond wafer can fully be polished by inclining the holder to the shaft. A wide distorted mirror wafer of diamond is produced. Fine wire patterns can be made on the diamond mirror wafer by the photolithography.
摘要翻译： 目前没有宽的大块金刚石晶圆。 提出了宽金刚石涂层的晶片代替块状金刚石晶片。 通过气相沉积方法将金刚石异质外延沉积在凸变形的非金刚石单晶衬底上。 在早期的步骤中，向衬底施加负偏压。 在Si衬底的情况下，通过提供低碳浓度的材料气体，首先在Si衬底上沉积β-SiC的中间层。 然后提高碳浓度以制备金刚石膜。 凸起变形的晶片粘附到具有能够倾斜到保持器的轴的保持器上。 将晶片推到抛光机的转台上。 通过将支架倾斜到轴上，可以完全抛光凸面金刚石晶片。 产生了一个宽扭曲的金刚石镜面晶圆。 可以通过光刻在金刚石镜晶片上形成细线图案。
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公开(公告)号：US5314570A
公开(公告)日：1994-05-24
申请号：US838726
申请日：1992-03-13
申请人： Akihiko Ikegaya , Naoji Fujimori
发明人： Akihiko Ikegaya , Naoji Fujimori
CPC分类号： C30B25/10 , C23C16/27 , C23C16/44 , C23C16/52 , C30B25/105
摘要： The present invention aims at improving a hot filament CVD method and apparatus capable of enlarging the diamond-forming area in relatively easy manner and utilizing effectively the capacity of a thermoelectron radiation material and provides a process and apparatus for producing diamond with excellent productivity as well as a compact size of apparatus, which can be applied to production on a commercial scale. The feature of the present invention consists in subjecting to decomposition, excitation and activation by a thermoelectron radiation material heated at a high temperature a raw material gas comprising at least one carbon source selected from the group consisting of hydrocarbons, hydrocarbons containing oxygens and/or nitrogens in the bonded groups, carbon oxides, halogenated hydrocarbons and solid carbon, hydrogen and optionally any one of inert gases of Group VIII elements, H.sub.2 O, O.sub.2 and F.sub.2 and depositing diamond on the surface of a substrate provided near the thermoelectron radiation material, characterized by surrounding the circumference of the thermoelectron radiation material by a cooling plate, providing a substrate to be deposited with diamond between the cooling plate and the thermoelectron radiation material with small gaps and controlling the surface temperature of the substrate facing the thermoelectron radiation material by the cooling plate and optionally a buffer material inserted between the cooling plate and the substrate, thereby depositing diamond.
摘要翻译： PCT No.PCT / JP91 / 00955 Sec。 371日期：1992年3月13日 102（e）1992年3月13日PCT PCT 1991年7月17日PCT公布。 出版物WO92 / 01828 日本1992年6月2日。本发明旨在改进能够以相对容易的方式扩大金刚石成形区域并有效利用热电子辐射材料的能力的热丝CVD方法和装置，并提供用于生产 钻石具有优异的生产率以及尺寸紧凑的装置，其可以以商业规模应用于生产。 本发明的特征在于通过在高温下加热的热电子辐射材料进行分解，激发和活化，所述原料气体包括至少一种选自烃，含氧和/或氮的烃的碳源 在结合基团中，碳氧化物，卤代烃和固体碳，氢和任选的VIII族元素，H 2 O，O 2和F 2的惰性气体中的任何一种，并在设置在热电子辐射材料附近的衬底的表面上沉积金刚石，其特征在于 通过冷却板围绕热电子辐射材料的周边，提供在冷却板和具有小间隙的热电子辐射材料之间沉积金刚石的基底，并且通过冷却板控制面向热电子辐射材料的基板的表面温度 和任选的缓冲材料 插入冷却板和基板之间，由此沉积金刚石。
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公开(公告)号：US5197651A
公开(公告)日：1993-03-30
申请号：US573062
申请日：1990-08-24
申请人： Tsutomu Nakamura , Katsuyuki Tanaka , Tetuso Nakai , Takahiro Imai , Akihiko Ikegaya , Naoji Fujimori
发明人： Tsutomu Nakamura , Katsuyuki Tanaka , Tetuso Nakai , Takahiro Imai , Akihiko Ikegaya , Naoji Fujimori
CPC分类号： C04B41/009 , C04B41/5002 , C04B41/85 , H01L24/75 , H01L2924/12033 , H01L2924/351
摘要： A bonding tool for TAB, used in the production of semiconductor chips, which is provided with, at the end thereof, a substrate consisting of a member selected from the group consisting of sintered compacts of Si or Si.sub.3 N.sub.4 as a predominant component, sintered compacts of SiC as a predominant component, sintered compacts of AlN as a predominant component and composite compacts thereof, the substrate being coated with polycrystalline diamond deposited by gaseous phase synthesis method.
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公开(公告)号：US6051063A
公开(公告)日：2000-04-18
申请号：US975254
申请日：1997-11-21
申请人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
发明人： Keiichiro Tanabe , Yuichiro Seki , Akihiko Ikegaya , Naoji Fujimori , Hideaki Nakahata , Shin-ichi Shikata
CPC分类号： C23C16/279 , C23C16/27 , C30B25/02 , C30B29/04 , H03H3/08 , H03H9/02582
摘要： A diamond wafer including a substrate and a (100) oriented polycrystalline diamond film grown on the substrate for making surface acoustic wave devices, semiconductor devices or abrasion-resistant discs. The (100) oriented film is produced by changing a hydrocarbon ratio in a material gas halfway from a higher value to a lower value. The wafer is monotonously distorted with a distortion height H satisfying 2 .mu.m.ltoreq..vertline.H.vertline..ltoreq.150 .mu.m. The film is polished to a roughness of less than Rmax50 nm and Ra20 nm.
摘要翻译： 一种金刚石晶片，其包括在基板上生长的用于制造表面声波装置，半导体装置或耐磨盘的基板和（100）定向多晶金刚石膜。 通过将材料气体中的烃比率从较高值改变为较低值来生产（100）取向膜。 晶片单调失真，失真高度H满足2微米
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9.发明授权
公开(公告)号：US5516027A
公开(公告)日：1996-05-14
申请号：US309842
申请日：1994-09-20
CPC分类号： C04B41/009 , B23K20/025 , C04B41/5002 , C04B41/85 , H01L24/79 , H05K13/003
摘要： A bonding tool has a head portion made essentially of vapor-deposited diamond, wherein a principal diamond crystal plane forming a head face is a (111) plane. Such a head face has high hardness and a good wear resistance. In order to improve the toughness of a bonding head which is mainly made of vapor-deposited diamond, a portion or ply forming the head face consists essentially of high-purity diamond, and another portion or ply supporting the head face consists essentially of low-purity diamond. The head face has a high rigidity, while the portion supporting the head face has a high toughness. In order to provide a bonding head portion which is mainly made of vapor-deposited diamond with electrical conductivity, a first portion or ply forming a head face consists essentially of polycrystalline diamond containing a relatively small amount of dopant, and another portion or ply supporting the first portion or ply contains a large amount of dopant. The head portion having electrical conductivity can be heated by energization. In a tool employing a coating containing vapor-deposited diamond as a bonding head portion, the coating is formed by a compound of a metal or ceramics and vapor-deposited diamond, in order to improve the strength of the coating and adhesion to a tool substrate.
摘要翻译： 接合工具具有基本上由气相沉积金刚石制成的头部，其中形成头部面的主要金刚石晶体平面是（111）面。 这种头面具有高硬度和良好的耐磨性。 为了提高主要由气相沉积金刚石制成的接合头的韧性，形成头部面的部分或层基本上由高纯度的金刚石组成，并且支撑头部面的另一部分或层基本上由低熔点金刚石构成， 纯度钻石。 头部表面具有高刚性，而支撑头部面的部分具有高韧性。 为了提供主要由具有导电性的气相沉积金刚石制成的接合头部分，形成头部面的第一部分或第一部分基本上由含有相对少量掺杂剂的多晶金刚石组成，另一部分或层叠支撑 第一部分或第二部分含有大量的掺杂剂。 可以通过通电来加热具有导电性的头部。 在使用包含气相沉积金刚石作为粘合头部分的涂层的工具中，涂层由金属或陶瓷和气相沉积金刚石的化合物形成，以便提高涂层的强度和对工具基材的粘附 。
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10.发明授权Cutting tool employing vapor-deposited polycrystalline diamond for cutting edge and method of manufacturing the same 失效使用气相沉积多晶金刚石切割刃的切割工具及其制造方法
公开(公告)号：US5435815A
公开(公告)日：1995-07-25
申请号：US84298
申请日：1993-06-29
CPC分类号： C23C16/278 , B23P15/28 , C23C16/01 , C23C16/271 , C23C16/276 , C23C28/04 , C23C28/044 , C23C28/048 , C23C30/005
摘要： A diamond cutting tool has a tool substrate and a cutting edge member. The cutting edge member is formed of a material having a three-layer structure or a diamond composite material. When the material having a three-layer structure is employed, the cutting edge member is formed by a vapor-deposited diamond layer defining a rake face, a layer of a composite material of vapor-deposited diamond and a metal or ceramics, and a layer of the metal or ceramics. The metal is prepared from Mo, W, Cr, V, Nb, Ta, Co, Ni or Fe, while the ceramics is prepared from cBN, SiC, Si.sub.3 N.sub.4, WC, TiC, TaC, NbC, Cr.sub.3 C.sub.2, Mo.sub.2 C, VC, TiN or BN. The cutting edge member is brazed to the tool substrate through the metal or ceramics layer. When the diamond composite material is employed, on the other hand, the cutting edge member is formed of a composite material of particles or fibers of AlN, cBN or SiC and vapor-deposited diamond. The diamond cutting tool is excellent in heat resistance and durability.
摘要翻译： 金刚石切削工具具有工具基板和切削刃部件。 切削刃部件由具有三层结构的材料或金刚石复合材料形成。 当采用具有三层结构的材料时，切割边缘部件由形成前刀面的气相沉积金刚石层，气相沉积金刚石和金属或陶瓷的复合材料层以及层 的金属或陶瓷。 该金属由Mo，W，Cr，V，Nb，Ta，Co，Ni或Fe制成，而陶瓷由cBN，SiC，Si3N4，WC，TiC，TaC，NbC，Cr3C2，Mo2C，VC，TiN 或BN。 切削刃部件通过金属或陶瓷层钎焊到工具基板上。 另一方面，当使用金刚石复合材料时，切削刃部件由AlN，cBN或SiC的颗粒或纤维的复合材料和气相沉积金刚石形成。 金刚石切割工具耐热性和耐久性优异。
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