摘要:
The present invention provides a barium titanate having a small particle size, containing small amounts of unwanted impurities, and exhibiting excellent electric characteristics, which can be employed for forming a dielectric ceramic thin film required for a small-sized capacitor which enables production of a small-sized electronic apparatus; and a process for producing the barium titanate. When a titanium oxide sol is reacted with a barium compound in an alkaline solution containing a basic compound, the basic compound is removed in the form of gas after completion of reaction, and the resultant reaction mixture is fired, a barium titanate having a large BET specific surface area and a high tetragonality content is produced.
摘要:
A barium titanate, which is single crystal in the form of particles, said particles comprising particles without a void having a diameter of 1 nm or more in an amount of 20% or more by number of the total particles. A dielectric material comprising the barium titanate as well as a capacitor comprising the dielectric material.
摘要:
The present invention provides a barium titanate having a small particle size, containing small amounts of unwanted impurities, and exhibiting excellent electric characteristics, which can be employed for forming a dielectric ceramic thin film required for a small-sized capacitor which enables production of a small-sized electronic apparatus; and a process for producing the barium titanate. When a titanium oxide sol is reacted with a barium compound in an alkaline solution containing a basic compound, the basic compound is removed in the form of gas after completion of reaction, and the resultant reaction mixture is fired, a barium titanate having a large BET specific surface area and a high tetragonality content is produced.
摘要:
The present invention provides a perovskite titanium-containing composite oxide fine particle represented by the formula: (A1XA2(1−X))YTiO3±δ (wherein 0≦X≦1, 0.98≦Y≦1.02, 0≦δ≦0.05, A1 and A2 each is an atom selected from a group consisting of Ca, Sr, Ba, Pb and Mg and are different from each other), wherein the specific surface area is from 1 to 100 m2/g and the D2/D1 value is from 1 to 10.
摘要:
The present invention provides a barium titanate having a small particle size, containing small amounts of unwanted impurities, and exhibiting excellent electric characteristics; and a process for producing the barium titanate.The perovskite-type barium titanate comprising at least one element selected from the group consisting of Sn, Zr, Ca, Sr, Pb, and the like, in an amount of 5 mol % or less (inclusive of 0 mol %) based on BaTiO3, wherein the molar ratio of A atom to B atom in the perovskite structure represented by ABX3 (A atom is surrounded with 12× atoms, and B atom is surrounded with 6× atoms) is from 1.001 to 1.025, and the specific surface area x (m2/g) and the ratio y of the c-axis length to the a-axis length of the crystal lattice as calculated by the Rietveld method satisfy the following formula. y>1.0083−6.53×10−7×x3 (wherein y=c-axis length/a-axis length, and 6.6≦x≦20).
摘要:
A process for producing a single crystal barium titanate comprises reacting a titanium oxide sol obtained by a wet process and a water-soluble barium compound under the presence of a basic compound in an aqueous reaction mixture at a pH of at least 11 to form a slurry containing barium titanate. The aqueous reaction mixture is subjected to a solid-liquid separation to separate the barium titanate from the slurry. The basic compound is removed as a gas from the barium titanate, and the barium titanate is fired at 300-1200° C.
摘要:
The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.
摘要:
A method for producing a grain-oriented electrical steel sheet excellent in magnetic property, comprising the steps of; heating a slab containing a prescribed amount of Al to a temperature of 1,200° C. or higher, hot-rolling the slab into a hot-rolled strip, annealing the strip as required, cold-rolling it once or twice or more with intermediate annealing(s), and decarburization annealing the cold rolled sheet, and final box annealing after the application of an annealing separator to prevent strip sticking during the annealing, characterized by heating the slab to a temperature (slab heating temperature Ts (° C.)) higher than the complete solution temperature of substances having intensities as inhibitors and nitriding treating the decarburization annealed steel sheet before the commencement of secondary recrystallization during the final box annealing.
摘要:
A titanium-containing perovskite composite oxide particle represented by the compositional formula: A(TixB(1−x))yO3 (provided that x and y each denoting a compositional ratio are 0≦x≦1 and 0.98≦y≦1.02, A is at least one or more element selected from Ca, Sr, Ba, Pb and Mg, and B is at least one or more element selected from Hf and Zr), wherein the specific surface area is from 1 to 100 m2/g, the average primary particle diameter D1 defined by formula (I) is from 10 to 1,000 nm, and the ratio D2/D1 of D1 to the average secondary particle diameter D2 is from 1 to 10: D1=6/ρS (I)(wherein ρ is a density of the particle and S is a specific surface area).
摘要翻译:由以下组成式表示的含钛钙钛矿复合氧化物颗粒:A(Ti x x B(1-x))Y O (条件是每个表示组成比的x和y分别为0 <= x <= 1和0.98 <= y <= 1.02,A为至少一种或多种选自Ca,Sr,Ba, Pb和Mg,B是选自Hf和Zr中的至少一种以上的元素),其中比表面积为1〜100m 2 / g,平均一次粒径D 1 通式(I)为10〜1000nm,D 1与平均二次粒径D 2的比D 2 / D 1为1〜10:&lt;线内式描述=“In-line 公式“end =”lead“?> D 1 = 6 / rhoS(I)<?in-line-formula description =”In-line Formulas“end =”tail“?>(其中rho是粒子的密度, S是比表面积)。
摘要:
A secondary battery which includes a positive electrode and a negative electrode, wherein the negative electrode has a negative electrode collector and a negative electrode active material layer, and the negative electrode collector has a base material which is formed of aluminum foil and an resin film which has a thickness of 0.01 to 5 μm and does not allow a nonaqueous electrolyte to permeate therethrough.