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    Light-emitting element
    1.
    发明授权
    Light-emitting element 有权
    发光元件

    公开(公告)号：US06713954B2

    公开(公告)日：2004-03-30

    申请号：US10097275

    申请日：2002-03-15

    申请人： Akihiro Wakahara ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

    发明人： Akihiro Wakahara ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

    IPC分类号： H01J162

    CPC分类号： H01J63/06 ,  B82Y10/00 ,  H01J2201/30469 ,  H01L33/325 ,  H01L33/502

    摘要： A light-emitting element includes a transparent substrate, a III-V nitride semiconductor layer including rare earth metal elements which is formed on said transparent substrate, and an irradiation source of electron beam which is disposed within 5 mm from the surface of said III-V nitride semiconductor layer so as to be opposite to said III-V nitride semiconductor layer. Then, the rare earth metal elements in the III-V nitride semiconductor layer are excited by electron beams from the irradiation source and a given fluorescence inherent to the rare earth metal elements are emitted.

    摘要翻译： 发光元件包括透明基板，包括形成在所述透明基板上的稀土金属元素的III-V族氮化物半导体层和设置在距离所述III型半导体层的表面5mm以内的电子束照射源， V族氮化物半导体层，以与所述III-V族氮化物半导体层相对。 然后，通过来自照射源的电子束激发III-V族氮化物半导体层中的稀土金属元素，并且发射稀土金属元素固有的给定荧光。

    Semiconductor light-emitting element
    2.
    再颁专利
    Semiconductor light-emitting element 有权
    半导体发光元件

    公开(公告)号：USRE40485E1

    公开(公告)日：2008-09-09

    申请号：US11140524

    申请日：2005-05-27

    申请人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

    发明人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

    IPC分类号： H01L27/15 ,  H01L21/00

    CPC分类号： H01L33/325 ,  H01L33/08

    摘要： In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.

    摘要翻译： 在半导体发光元件中，底层由AlN层构成，第一包层由n-AlGaN层构成。 发光层由由i-GaN制成的基底层和在基底层中分离的由i-AlGaInN构成的多个岛状单晶部分构成。 然后，在基底层和/或岛状单晶部分中并入至少一种稀土金属元素。

    Semiconductor light-emitting element
    4.
    再颁专利
    Semiconductor light-emitting element 有权
    半导体发光元件

    公开(公告)号：USRE40163E1

    公开(公告)日：2008-03-25

    申请号：US11083331

    申请日：2005-03-17

    申请人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

    发明人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

    IPC分类号： H01L31/12

    CPC分类号： H01L33/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/18

    摘要： In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer.

    摘要翻译： 在半导体发光元件中，底层由X射线摇摆曲线中具有FWHM的90秒以下的高结晶性AlN层构成，第一包层由n-AlGaN层构成。 发光层由由i-GaN制成的基底层和在基底层中分离的由i-AlGaInN构成的多个岛状单晶部分构成。

    Method for fabricating a nitride film
    5.
    发明授权
    Method for fabricating a nitride film 有权
    氮化膜的制造方法

    公开(公告)号：US06706620B2

    公开(公告)日：2004-03-16

    申请号：US10074589

    申请日：2002-02-13

    申请人： Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Keiichiro Asai ,  Osamu Oda

    发明人： Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Keiichiro Asai ,  Osamu Oda

    IPC分类号： H01L2128

    CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

    摘要： A lower region having a composition of Alx1Gax2Inx3N (x1+x2+x3=1, 0.5≦x1≦1.0) is formed through epitaxial growth by a CVD method, and subsequently, an upper region having a composition of Aly1Gay2Iny3N (y1+y2+y3=1, 0≦y1≦x1−0.1) is formed through epitaxial growth by a CVD method. A boundary face divides a given III nitride film into the lower region and the upper region and the lower and upper regions have an Al content difference of 10 atomic percent or more.

    摘要翻译： 通过CVD方法的外延生长，形成具有Al x1Gax2Inx3N（x1 + x2 + x3 = 1，0.5 <= x1 <= 1.0）的组成的下部区域，随后，具有组成为Aly1Gay2Iny3N（y1 + y2 + y3 = 1,0 <= y1 <= x1-0.1）通过CVD法进行外延生长而形成。 边界面将给定的III族氮化物膜分成下部区域，上部区域和下部和上部区域的Al含量差异为10原子％以上。

    Semiconductor light-emitting devices
    8.
    发明授权
    Semiconductor light-emitting devices 有权
    半导体发光器件

    公开(公告)号：US06835965B2

    公开(公告)日：2004-12-28

    申请号：US10351390

    申请日：2003-01-27

    申请人： Mitsuhiro Tanaka ,  Tomohiko Shibata ,  Osamu Oda ,  Takashi Egawa

    发明人： Mitsuhiro Tanaka ,  Tomohiko Shibata ,  Osamu Oda ,  Takashi Egawa

    IPC分类号： H01L3300

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01L33/12 ,  H01S5/22 ,  H01S5/34333 ,  H01S2301/173

    摘要： An object of the present invention is to provide a semiconductor light-emitting device that reduces dislocation density and has a high luminous efficiency. A semiconductor light-emitting device 20 has an underlayer 13 made of nitride semiconductor containing Al and a dislocation density of 1011/cm2 or less. The device further has an n-type conductive layer 14 and p-type conductive layer 17 each composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×1010/cm2 or less. The device still further has a light emitting layer 15 composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×1010/m2 or less, as well.

    摘要翻译： 本发明的目的在于提供减少位错密度，发光效率高的半导体发光元件。 半导体发光器件20具有由含有Al的氮化物半导体和位移密度为10 11 / cm 2以下的底层13。 该器件还具有n型导电层14和p型导电层17，它们各自由氮化物半导体构成，Al氮化物半导体的Al含量低于构成底层的氮化物半导体，其位错密度为1×10 10 / 2>以下。 该装置还具有由氮化物半导体构成的发光层15，该氮化物半导体的Al含量比构成底层的氮化物半导体的Al含量小，并且具有1×10 10 / m 2以下的位错密度。

    Semiconductor element
    9.
    发明授权
    Semiconductor element 有权
    半导体元件

    公开(公告)号：US06781164B2

    公开(公告)日：2004-08-24

    申请号：US10690290

    申请日：2003-10-21

    申请人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

    发明人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

    IPC分类号： H01L31072

    CPC分类号： H01L29/66318 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/66856

    摘要： An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.

    摘要翻译： 将作为底层的AlN膜外延生长在具有10 11 / cm 2以下的位错密度和90秒以下的结晶度的X射线的半峰全宽（FWHM）的基板上 （002）反射的摇摆曲线。 然后，在AlN膜上，将n-GaN膜外延生长为位错密度为10 10 / cm 2以下的导电层，在半高宽度下为150秒以下的结晶度（FWHM ）（002）反射的X射线摇摆曲线，以制造半导体元件。