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    Plate-like ferrite particles with magnetoplumbite structure and magnetic card using the same
    2.
    发明授权
    Plate-like ferrite particles with magnetoplumbite structure and magnetic card using the same 失效
    板状铁氧体颗粒与磁铅矿结构和磁卡使用相同

    公开(公告)号：US6017631A

    公开(公告)日：2000-01-25

    申请号：US33688

    申请日：1998-03-03

    申请人： Akinori Yamamoto ,  Kazutoshi Sanada ,  Shigehisa Yamamoto

    发明人： Akinori Yamamoto ,  Kazutoshi Sanada ,  Shigehisa Yamamoto

    IPC分类号： C01G49/00 ,  G11B5/706 ,  G11B5/855 ,  H01F1/11 ,  B32B5/16

    CPC分类号： G11B5/855 ,  G11B5/70678 ,  Y10S428/90 ,  Y10T428/25 ,  Y10T428/257 ,  Y10T428/2991 ,  Y10T428/2995 ,  Y10T428/2998 ,  Y10T428/31663

    摘要： The present invention relates to plate-like ferrite particles with magnetoplumbite structure having a composition represented by the general formula of AO.multidot.n{(Fe.sub.1-(a+b) Bi.sub.a M.sub.b).sub.2 O.sub.3 } wherein A is Ba, Sr or Ba--Sr; M is Zn--Nb, Zn--Ta or Zn--Sn; n is from 5.5 to 6.1; a is from 0.001 to 0.005; b is from 0.050 to 0.120; and the ratio of b/a is from 20 to 50. The plate-like ferrite particles with magnetoplumbite structure have an appropriate particle size, a low coercive force, a large saturation magnetization, a small switching field distribution (S.F.D.) and an excellent temperature stability, and a magnetic card containing the plate-like ferrite particles with magnetoplumbite structure.

    摘要翻译： 本发明涉及具有由通式AOxn {（Fe1-（a + b）BiaMb）2O3}表示的组成的具有磁铅矿结构的板状铁氧体颗粒，其中A为Ba，Sr或Ba-Sr; M是Zn-Nb，Zn-Ta或Zn-Sn; n为5.5〜6.1; a为0.001〜0.005; b为0.050〜0.120; b / a的比例为20〜50。具有磁铅矿结构的板状铁氧体颗粒具有适当的粒径，低的矫顽力，大的饱和磁化强度，小的开关场分布（SFD）和优异的温度 稳定性和包含具有磁铅矿结构的板状铁氧体颗粒的磁卡。

    Semiconductor device testing apparatus and testing method thereof
    5.
    发明授权
    Semiconductor device testing apparatus and testing method thereof 失效
    半导体器件测试装置及其测试方法

    公开(公告)号：US6037794A

    公开(公告)日：2000-03-14

    申请号：US129699

    申请日：1998-08-05

    申请人： Shigehisa Yamamoto ,  Katsuya Shiga

    发明人： Shigehisa Yamamoto ,  Katsuya Shiga

    IPC分类号： G01R31/28 ,  G01R31/3185 ,  H01L21/66 ,  G01R31/02

    CPC分类号： G01R31/318505 ,  G01R31/2886 ,  G01R31/318511 ,  G01R31/2856

    摘要： An object is to obtain a semiconductor device testing apparatus that can improve the contact characteristic between probe needles and power-supply terminals and signal terminals while ensuring efficiency of product utilization of a tested wafer. Provided on a probe wafer (4) are bumps (5) formed in the same positions in mirror symmetry as the positions of pads (3) formed in individual chips (2) on a tested wafer (1), a common interconnection (6) for interconnecting bumps (5) to be supplied with the same power supplies and signals, and terminals (7) connected to the common interconnection (6) to supply power supplies and signals to the common interconnection (6) from the outside. The bumps (5) come in contact with the pads (3) in the chips (2) when the probe wafer (4) and the tested wafer (1) are put together. The common interconnection (6) supplies the power supplies and signals for a burn-in test to the pads (3) in the chips (2).

    摘要翻译： 本发明的目的是获得能够提高探针和电源端子与信号端子之间的接触特性的半导体器件测试装置，同时确保测试晶片的产品利用效率。 提供在探针晶片（4）上的凸起（5）是与形成在测试晶片（1）上的各个芯片（2）中的焊盘（3）的位置成反射对称的相同位置的凸块（5），公共互连（6） 用于互连凸起（5）以提供相同的电源和信号;以及连接到公共互连（6）的端子（7），以从外部向公共互连（6）提供电源和信号。 当探针晶片（4）和测试晶片（1）放在一起时，凸块（5）与芯片（2）中的焊盘（3）接触。 公共互连（6）为芯片（2）中的焊盘（3）提供用于老化测试的电源和信号。

    Design aiding apparatus and method for designing a semiconductor device
    6.
    发明授权
    Design aiding apparatus and method for designing a semiconductor device 失效
    设计半导体器件的设计辅助设备和方法

    公开(公告)号：US06024478A

    公开(公告)日：2000-02-15

    申请号：US761901

    申请日：1996-12-09

    申请人： Shigehisa Yamamoto

    发明人： Shigehisa Yamamoto

    IPC分类号： G01R31/28 ,  G06F17/50 ,  G01R19/145

    CPC分类号： G06F17/5068

    摘要： An electric work station calculates an output load of a selected cell based on information from at least one of a design cell information library, a logic circuit information library and a layout information library. The work station further calculates a hot carrier dependent lifetime of a transistor in the cell by using the computed output load and information from a reliability information library, and verifies reliability of the cell by comparing the calculated lifetime with a reference value.

    摘要翻译： 电工站基于来自设计小区信息库，逻辑电路信息库和布局信息库中的至少一个的信息来计算所选小区的输出负载。 工作站通过使用计算出的输出负载和来自可靠性信息库的信息来进一步计算单元中晶体管的热载流子相关寿命，并通过将计算的寿命与参考值进行比较来验证单元的可靠性。

    Spherical ferrite particles and ferrite resin composite for bonded magnetic core
    8.
    发明授权
    Spherical ferrite particles and ferrite resin composite for bonded magnetic core 失效
    用于粘结磁芯的球形铁氧体颗粒和铁氧体树脂复合材料

    公开(公告)号：US5198138A

    公开(公告)日：1993-03-30

    申请号：US773329

    申请日：1991-10-11

    申请人： Shigehisa Yamamoto ,  Masaru Kawabata

    发明人： Shigehisa Yamamoto ,  Masaru Kawabata

    IPC分类号： H01F1/26 ,  H01F1/36 ,  H01F1/37

    CPC分类号： H01F1/37 ,  H01F1/26 ,  H01F1/36

    摘要： Disclosed herein are ferrite particles for a bonded magnetic core comprising crystal grains of 5 to 15 .mu.m in average diameter, having an average particle diameter of 20 to 150 .mu.m and a magnetic permeability of not less than 24, and consisting essentially of 47 to 58 mol % of Fe.sub.2 O.sub.3, 10 to 30 mol % of nickel oxide, manganese oxide, nickel-managanese oxide (calculated as NiO, MnO or NiO.MnO) and 15 to 40 mol % of zinc oxide (calculated as ZnO).

    摘要翻译： 本发明公开了一种粘结磁芯的铁氧体颗粒，其包含平均粒径为5〜15μm，平均粒径为20〜150μm，磁导率不低于24的晶粒，基本上由47〜 58mol％的Fe 2 O 3，10〜30mol％的氧化镍，氧化锰，镍锰氧化物（以NiO，MnO或NiO.MnO计）和15〜40mol％的氧化锌（以ZnO计）。

    Input protection circuit
    10.
    发明授权
    Input protection circuit 失效
    输入保护电路

    公开(公告)号：US5696398A

    公开(公告)日：1997-12-09

    申请号：US280972

    申请日：1994-07-27

    申请人： Shigehisa Yamamoto

    发明人： Shigehisa Yamamoto

    IPC分类号： H01L29/78 ,  H01L27/02 ,  H01L23/62

    CPC分类号： H01L27/0255 ,  H01L27/0251

    摘要： An input protection circuit comprises an internal circuit and an input terminal, between which a pair of rectifying devices are interposed with polygonal diffusion regions of one and the other conduction types, which diffusion regions are formed longer along the width thereof orthogonal to the direction of current flow in the wiring than along the direction of current flow. The width of the contacts between said wiring and said diffusion regions is greater than the width of the wiring not having the contacts, thereby achieving a high electrostatic breakdown voltage.

    摘要翻译： 输入保护电路包括内部电路和输入端子，一对整流装置之间插入有一个和另一个导电类型的多边形扩散区域，该扩散区域沿着与电流方向正交的宽度形成较长 布线中的流动比沿电流方向流动。 所述布线和所述扩散区域之间的触点的宽度大于不具有触点的布线的宽度，从而实现高的静电击穿电压。