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40 条记录 (耗时 0.045 秒)

    Memory device
    2.
    发明授权
    Memory device 有权
    内存设备

    公开(公告)号：US08947920B2

    公开(公告)日：2015-02-03

    申请号：US14018148

    申请日：2013-09-04

    申请人： Masahiro Takahashi ,  Tsuneo Inaba ,  Dong Keun Kim ,  Ji Wang Lee

    发明人： Masahiro Takahashi ,  Tsuneo Inaba ,  Dong Keun Kim ,  Ji Wang Lee

    IPC分类号： G11C11/00 ,  G11C11/16

    CPC分类号： G11C11/1673 ,  G11C11/161 ,  G11C11/1659

    摘要： According to one embodiment, a memory device includes a memory cell, a sense amplifier, unit structures and a reference signal generator. Each structure includes a first end, a first transistor, a first local line, a variable resistance element, a second transistor, a second local line, and a third transistor coupled in series. The reference signal generator includes first to fourth global lines, and first and second ones of the unit structures. The first unit structure is coupled at the first end to the first global line and coupled at the second end to the third global line. The second unit structure is coupled at the first end to the fourth global line and coupled at the second end to the second global line.

    摘要翻译： 根据一个实施例，存储器件包括存储器单元，读出放大器，单元结构和参考信号发生器。 每个结构包括第一端，第一晶体管，第一局部线，可变电阻元件，第二晶体管，第二本地线和串联耦合的第三晶体管。 参考信号发生器包括第一至第四全局线，以及第一和第二单元结构。 第一单元结构在第一端耦合到第一全局线并且在第二端耦合到第三全局线。 第二单元结构在第一端耦合到第四全局线并且在第二端耦合到第二全局线。

    Memory device
    3.
    发明授权
    Memory device 有权
    内存设备

    公开(公告)号：US09177641B2

    公开(公告)日：2015-11-03

    申请号：US14018306

    申请日：2013-09-04

    申请人： Masahiro Takahashi ,  Tsuneo Inaba ,  Dong Keun Kim ,  Ji Wang Lee

    发明人： Masahiro Takahashi ,  Tsuneo Inaba ,  Dong Keun Kim ,  Ji Wang Lee

    IPC分类号： G11C13/00 ,  G11C11/16

    CPC分类号： G11C13/004 ,  G11C11/1673 ,  G11C2013/0054 ,  G11C2213/79

    摘要： According to one embodiment, a memory device includes a memory cell, a sense amplifier, and a resistor. The sense amplifier includes a first input and a second input, outputs a signal in accordance with a difference between the first and second inputs, and is selectively coupled at a second input to the memory cell. The resistor is in a first path between the first input of the sense amplifier and a ground node.

    摘要翻译： 根据一个实施例，存储器件包括存储单元，读出放大器和电阻器。 读出放大器包括第一输入和第二输入，根据第一和第二输入之间的差输出信号，并且在第二输入端选择性地耦合到存储单元。 电阻器位于读出放大器的第一输入端和接地节点之间的第一路径中。

    RECEIVER CIRCUIT
    5.
    发明申请
    RECEIVER CIRCUIT 有权
    接收电路

    公开(公告)号：US20090149142A1

    公开(公告)日：2009-06-11

    申请号：US12179486

    申请日：2008-07-24

    申请人： Tae Jin Hwang ,  Kun Woo Park ,  Yong Ju Kim ,  Hee Woong Song ,  Ic Su Oh ,  Hyung Soo Kim ,  Hae Rang Choi ,  Ji Wang Lee ,  Jae Min Jang

    发明人： Tae Jin Hwang ,  Kun Woo Park ,  Yong Ju Kim ,  Hee Woong Song ,  Ic Su Oh ,  Hyung Soo Kim ,  Hae Rang Choi ,  Ji Wang Lee ,  Jae Min Jang

    IPC分类号： G06F3/033

    CPC分类号： G06F13/4072

    摘要： A receiver circuit is capable of improving its operating characteristics. The receiver circuit includes a variable converter configured to output off-set control voltages in a first output range in a first operation mode and output the off-set control voltages in a second output range in a second operation mode according to a test mode activation signal, and a sense amplifier configured to sense input data based on a sensitivity, wherein the sensitivity is controlled by the off-set control voltages.

    摘要翻译： 接收机电路能够改善其操作特性。 接收器电路包括可变转换器，其被配置为在第一操作模式中在第一输出范围中输出偏移控制电压，并且根据测试模式激活信号在第二操作模式中将偏移控制电压输出到第二输出范围 以及感测放大器，被配置为基于灵敏度来感测输入数据，其中灵敏度由偏移控制电压控制。

    DATA RECEIVER OF SEMICONDUCTOR INTEGRATED CIRCUIT
    6.
    发明申请
    DATA RECEIVER OF SEMICONDUCTOR INTEGRATED CIRCUIT 失效
    半导体集成电路的数据接收器

    公开(公告)号：US20090129459A1

    公开(公告)日：2009-05-21

    申请号：US12177829

    申请日：2008-07-22

    申请人： Hyung Soo Kim ,  Kun Woo Park ,  Yong Ju Kim ,  Hee Woong Song ,  Ic Su Oh ,  Tae Jin Hwang ,  Hae Rang Choi ,  Ji Wang Lee

    发明人： Hyung Soo Kim ,  Kun Woo Park ,  Yong Ju Kim ,  Hee Woong Song ,  Ic Su Oh ,  Tae Jin Hwang ,  Hae Rang Choi ,  Ji Wang Lee

    IPC分类号： H03K5/159

    CPC分类号： H03K19/09425

    摘要： A semiconductor integrated circuit equipped with an equalizer which has a circuit structure simpler than that of a related equalizer according to an FFE scheme or a DFE scheme and is capable of preventing a noise component from being amplified. The data receiver includes a plurality of receiver units, wherein each receiver unit includes a plurality of level detectors which detect different levels, and an encoder, in which the level detectors receive data according to a clock signal having a predetermined phase difference and perform an amplification operation including an equalization function based on feedback data, thereby outputting an amplification signal, and wherein level detectors of one receiver unit receive an amplification signal, as the feedback data, from level detectors of another receiver unit that receives a first clock signal having a phase more advanced than a phase of a second clock signal received in one receiver unit.

    摘要翻译： 一种配备有均衡器的半导体集成电路，其具有比根据FFE方案或DFE方案的相关均衡器的电路结构简单的电路结构，并且能够防止噪声分量被放大。 数据接收机包括多个接收机单元，其中每个接收机单元包括检测不同电平的多个电平检测器和编码器，其中电平检测器根据具有预定相位差的时钟信号接收数据并执行放大 操作包括基于反馈数据的均衡功能，从而输出放大信号，并且其中一个接收器单元的电平检测器从另一接收器单元的电平检测器接收作为反馈数据的放大信号，该接收器单元接收具有相位的第一时钟信号 比在一个接收机单元中接收的第二时钟信号的相位更先进。

    DATA OUTPUT CIRCUIT FOR SEMICONDUCTOR MEMORY APPARATUS
    7.
    发明申请
    DATA OUTPUT CIRCUIT FOR SEMICONDUCTOR MEMORY APPARATUS 有权
    半导体存储器的数据输出电路

    公开(公告)号：US20090067278A1

    公开(公告)日：2009-03-12

    申请号：US12169568

    申请日：2008-07-08

    申请人： Hae Rang Choi ,  Kun Woo Park ,  Yong Ju Kim ,  Hee Woong Song ,  Ic Su Oh ,  Hyung Soo Kim ,  Tae Jin Hwang ,  Ji Wang Lee

    发明人： Hae Rang Choi ,  Kun Woo Park ,  Yong Ju Kim ,  Hee Woong Song ,  Ic Su Oh ,  Hyung Soo Kim ,  Tae Jin Hwang ,  Ji Wang Lee

    IPC分类号： G11C8/08

    CPC分类号： G11C7/1051 ,  G11C7/1057 ,  G11C29/028 ,  G11C29/1201 ,  G11C29/50

    摘要： A data output circuit for a semiconductor memory apparatus includes a driver control signal generating unit that has a plurality of control signal generating units, each of which generates a driver unit control signal in response to a test signal during a test, and generates the driver unit control signal according to whether or not a fuse is cut after the test is completed, a first driver that has a plurality of driver units, each of which is activated in response to the driver unit control signal to drive a first data signal as an input signal and to output the driven first data signal to an output node, a signal combining unit that generates a first driver control signal in response to the driver unit control signal and an enable signal, and a second driver that has a plurality of driver units, each of which is activated in response to the first driver control signal to drive a second data signal as an input signal and to output the driven second data signal to the output node, and the number of driver units being two or more times as much as the number of driver units in the first driver. A voltage level on the output node is the voltage level of an output signal.

    摘要翻译： 一种用于半导体存储装置的数据输出电路，包括具有多个控制信号生成单元的驱动器控制信号生成单元，每个控制信号生成单元响应于测试期间的测试信号生成驱动单元控制信号，并且生成驱动单元 根据在测试完成之后是否切断熔丝的控制信号，具有多个驱动单元的第一驱动器，每个驱动器单元响应于驱动单元控制信号被激活以驱动第一数据信号作为输入 信号并将驱动的第一数据信号输出到输出节点;响应于驱动单元控制信号和使能信号产生第一驱动器控制信号的信号组合单元，以及具有多个驱动器单元的第二驱动器， 其中的每一个响应于第一驱动器控制信号被激活，以驱动第二数据信号作为输入信号，并将驱动的第二数据信号输出到输出节点;以及 驱动器单元的数量是第一驱动器中的驱动器单元的数量的两倍或更多倍。 输出节点上的电压电平是输出信号的电压电平。