摘要:
A thermoplastic resin composition comprising (a) modified polyolefin produced by graft-polymerizing a polyolefin with a glycidyl compound represented by the following general formula: ##STR1## wherein R is a hydrogen atom or an alkyl group having 1-6 carbon atoms, Ar is an aromatic hydrocarbon group having 6-20 carbon atoms and containing at least one glycidyloxy group, and n is an integer of 1-4; and (b) a matrix polymer resin such as polyamide, polyester, polycarbonate etc.
摘要:
A thermoplastic resin composition comprising (A) 5 to 95 parts by weight of an olefinic resin and (B) 95 to 5 parts by weight of an acrylonitrile-styrenic copolymer is improved in compatibility between the olefinic resin and the acrylonitrile-styrenic copolymer by modifying at least a part of the acrylonitrile-styrenic copolymer with an epoxy compound and by incorporating an effective amount of at least one compatibilizer selected from the group consisting of styrene-ethylene-butadiene-styrene block copolymers modified with unsaturated carboxylic acids or anhydrides thereof, unsaturated carboxylic acid-olefine copolymers, and polymers reactive with an epoxy group.
摘要:
The thermoplastic resin composition of the present invention is made of:(a) 5-95 weight % of polypropylene;(b) 95-5 weight % of a polyester; and(c) 2-70 parts by weight, per 100 parts by weight of the total of (a)+(b), of a polyolefin-polyester graft copolymer.The polyolefin-polyester graft copolymer is constituted by (A) 10-90 parts by weight of a polyester having an intrinsic viscosity [.eta.] of 0.30-1.20 and an end carboxyl group content of 15-200 milliequivalent/kg; and (B) 90-10 parts by weight of a modified polyolefin having an epoxy group or carboxyl group content of 0.2-5 mol % and a weight-average molecular weight of 8,000-140,000. This thermoplastic resin composition may further contain (d) a modified polypropylene grafted with an unsaturated carboxylic acid or its anhydride.
摘要:
The thermoplastic resin composition of the present invention is made of:(a) 5-95 weight % of polypropylene;(b) 95-5 weight % of a polyester; and(c) 2-70 parts by weight, per 100 parts by weight of the total of (a) + (b), of a polyolefin-polyester graft copolymer.The polyolefin-polyester graft copolymer is constituted by 10-90 parts by weight of a polyester having an intrinsic viscosity [n] of 0.30-1.20 and an end carboxyl group content of 15-200 milliequivalent/kg; and (B) 90-10 parts by weight of a modified polyolefin having an epoxy group or carboxyl group content of 0.2-5 mol % and a weight-average molecular weight of 8,000-140,000. This thermoplastic resin composition may further contain (d) a modified polypropylene grafted with an unsaturated carboxylic acid or its anhydride.
摘要:
Provided is a TFT board for a liquid crystal display device including: a circuit layer formed on a substrate, the circuit layer including a thin film transistor including a semiconductor layer, a gate electrode, a drain electrode, and a source electrode; and a color filter layer formed on the circuit layer. The color filter layer has a through hole formed therein above the semiconductor layer in a region between the source electrode and the drain electrode.
摘要:
A display device includes a display drain signal line which belongs to a display pixel is connected to a pixel electrode via a TFT, a first dummy drain signal line which belongs to a dummy pixel is connected to a dummy pixel electrode via a TFT, and a second dummy drain signal line is disposed outside of the dummy pixel. The second dummy drain signal line is not connected to a dummy pixel electrode.
摘要:
A display device includes a substrate having display portion and peripheral portion, a plurality of gate signal lines and a plurality of drain signal lines formed over the substrate, a plurality of switching elements connected to the plurality of gate signal lines and the plurality of drain signal lines and formed over the substrate, and a plurality of pixel electrodes connected to the plurality of switching elements and formed in the display portion. An organic interlayer film is formed in the display portion and the peripheral portion, and a covering layer is formed on the organic interlayer film in the peripheral portion and the insulating film includes at least one of a plurality of recesses and protuberances.
摘要:
A region surrounded by two gate wiring and two drain wiring includes pixels and when there is a defect of short-circuit in adjacent pixel electrodes, the short-circuited portion is removed by irradiating a laser via a mask having a transmission pattern, which corresponds to a pattern of the gate wiring, drain wiring and pixel electrodes in the short-circuited portion. The above short-circuited portion is identified and removed in comparison to a normal pattern, by use of information from an inspection apparatus, and the pattern defect formed on the substrate is automatically repaired. By applying the above method to a manufacturing process of display apparatus, in particular, to a resist pattern forming process, a display apparatus having a highly qualified display property may be achieved.
摘要:
A display device includes: a first line and a second line which are arranged adjacent to and parallel to each other in a spaced-apart manner; a conductive layer which is arranged at a position where the conductive layer overlaps with the first line and the second line; and an insulation layer which is interposed between the first and second lines and the conducive layer. Here, the conductive layer includes a first overlapping portion which overlaps with the first line, a second overlapping portion which overlaps with the second line, and a connecting portion which connects the first overlapping portion and the second overlapping portion between the first overlapping portion and the second overlapping portion.
摘要:
A normal transistor CTFT connected to a data signal line DL and a pixel electrode PX and a spare transistor FTFT in a floating state are formed on a gate line GL. When an operational abnormality occurs in the normal transistor CTFT, the normal transistor CTFT is cut off from the data signal line DL and is cut off from the pixel electrode PX connected via a through hole TH by cutting lines CL. Thereafter, the spare transistor FTFT is connected to the data signal line DL and the pixel electrode PX by repair lines RL.