公开(公告)号：US20050005859A1

公开(公告)日：2005-01-13

申请号：US10498478

申请日：2002-12-12

申请人： Akira Koshiishi ,  Mitsuru Hashimoto ,  Hideaki Tanaka ,  Shigeru Tahara ,  Kunihiko Hinata ,  Jun Ooyabu

发明人： Akira Koshiishi ,  Mitsuru Hashimoto ,  Hideaki Tanaka ,  Shigeru Tahara ,  Kunihiko Hinata ,  Jun Ooyabu

IPC分类号： H01J37/32 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67069 ,  H01J37/32642 ,  Y10S156/915

摘要： A ring mechanism, comprising a focus ring and divided cover rings surrounding a wafer W placed on a loading table (lower electrode) mounted in a processing chamber, wherein a ring-shaped clearance δ1 is provided between the divided rings to spread plasma to the radial outside of the focus ring to allow plasma to get therein, whereby a potential difference between the wafer W and the focus ring can be eliminated to prevent arc discharge by plasma from occurring between the wafer W and the focus ring.

摘要翻译： 环形机构，包括聚焦环和围绕放置在安装在处理室中的装载台（下电极）上的晶片W）的分隔盖环，其中环形间隙δ1设置在分隔环之间以将等离子体扩散到径向 在聚焦环外部允许等离子体进入其中，由此可以消除晶片W和聚焦环之间的电位差，以防止在晶片W和聚焦环之间发生等离子体的电弧放电。

公开(公告)号：US07882800B2

公开(公告)日：2011-02-08

申请号：US10498478

申请日：2002-12-12

申请人： Akira Koshiishi ,  Mitsuru Hashimoto ,  Hideaki Tanaka ,  Shigeru Tahara ,  Kunihiko Hinata ,  Jun Ooyabu

发明人： Akira Koshiishi ,  Mitsuru Hashimoto ,  Hideaki Tanaka ,  Shigeru Tahara ,  Kunihiko Hinata ,  Jun Ooyabu

IPC分类号： C23C16/00

CPC分类号： H01L21/67069 ,  H01J37/32642 ,  Y10S156/915

摘要： A ring mechanism, comprising a focus ring and divided cover rings surrounding a wafer W placed on a loading table (lower electrode) mounted in a processing chamber, wherein a ring-shaped clearance δ1 is provided between the divided rings to spread plasma to the radial outside of the focus ring to allow plasma to get therein, whereby a potential difference between the wafer W and the focus ring can be eliminated to prevent arc discharge by plasma from occurring between the wafer W and the focus ring.

摘要翻译： 环形机构，包括聚焦环和围绕放置在安装在处理室中的装载台（下电极）上的晶片W的分隔盖环），其中环形间隙δ1设置在分隔环之间以将等离子体扩散到径向 在聚焦环外部允许等离子体进入其中，由此可以消除晶片W和聚焦环之间的电位差，以防止在晶片W和聚焦环之间发生等离子体的电弧放电。

公开(公告)号：US20070169891A1

公开(公告)日：2007-07-26

申请号：US10933383

申请日：2004-09-03

申请人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

发明人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

IPC分类号： C23F1/00

CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/68757

摘要： A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

摘要翻译： 提供了一种聚焦环和等离子体处理装置，其能够改善表面的表面均匀性并减少与常规情况相比在半导体晶片的周边部分的背面上沉积的情况。 安装在真空室中的是用于在其上安装半导体晶片的基座，并且安装聚焦环以围绕安装在基座上的半导体晶片。 聚焦环包括由电介质制成的环形下部构件和由导电材料制成并安装在下部构件上的环形上部构件。 上部构件包括平坦部，该平坦部是具有位于比半导体晶片W的待加工表面高的顶面的外周部，以及作为向内倾斜的内周部的倾斜部。

公开(公告)号：US07658816B2

公开(公告)日：2010-02-09

申请号：US10933383

申请日：2004-09-03

申请人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

发明人： Akira Koshiishi ,  Hideaki Tanaka ,  Nobuyuki Okayama ,  Masaaki Miyagawa ,  Shunsuke Mizukami ,  Wataru Shimizu ,  Jun Hirose ,  Toshikatsu Wakaki ,  Tomonori Miwa ,  Jun Ooyabu ,  Daisuke Hayashi

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/68757

摘要： A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

摘要翻译： 提供了一种聚焦环和等离子体处理装置，其能够改善表面的表面均匀性并减少与常规情况相比在半导体晶片的周边部分的背面上沉积的情况。 安装在真空室中的是用于在其上安装半导体晶片的基座，并且安装聚焦环以围绕安装在基座上的半导体晶片。 聚焦环包括由电介质制成的环形下部构件和由导电材料制成并安装在下部构件上的环形上部构件。 上部构件包括平坦部，该平坦部是具有位于比半导体晶片W的待加工表面高的顶面的外周部，以及作为向内倾斜的内周部的倾斜部。

公开(公告)号：US07506610B2

公开(公告)日：2009-03-24

申请号：US11137516

申请日：2005-05-26

申请人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

发明人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32577 ,  H01J37/32082 ,  H01J37/32174 ,  H01L21/31116

摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.

摘要翻译： 一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。 上电极被设置为面对放置在处理容器内的目标衬底。 电动给料器包括在环形方向上连续地连接到上电极的第一圆柱形导电构件。 电馈送器被配置为将第一RF电源的第一RF输出提供给上电极。

公开(公告)号：US20050269292A1

公开(公告)日：2005-12-08

申请号：US11137492

申请日：2005-05-26

申请人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

发明人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

IPC分类号： H05H1/46 ,  B01J3/00 ,  B01J19/08 ,  C23F1/00 ,  H01J37/32 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01J37/32449 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32587

摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.

摘要翻译： 一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。 第一上电极被设置成具有环形并且面对放置在处理容器内的目标衬底。 第二上电极径向设置在第一上电极内并与其电绝缘。 第一馈电器被配置为以第一功率值将第一RF电源的第一RF输出提供给第一上电极。 第二馈电器从第一馈电器分支并且被配置为以小于第一功率值的第二功率值将第一RF电源的第一RF输出提供给第二上电极。

公开(公告)号：US20050106869A1

公开(公告)日：2005-05-19

申请号：US10505176

申请日：2003-03-10

申请人： Jun Ooyabu ,  Akira Koshiishi

发明人： Jun Ooyabu ,  Akira Koshiishi

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01J37/32477

摘要： A plasma processing apparatus enabling reduction of the deposition of CF polymers in a processing chamber. The plasma processing apparatus (1) comprises a plasma processing vessel (3) having a large diameter at the lower portion and a small diameter at the upper portion to define a processing chamber (2) inside the vessel. The pressure in the processing chamber (2) is reduced to a predetermined vacuum atmosphere, and a processing gas containing a CF gas is introduced into the processing chamber (2) and changed to a plasma, and thereby a semiconductor wafer (34) is subjected to a desired microprocessing. A Y2O3 sprayed coating (41) is formed over a predetermined area of an inner wall (3b) of the plasma processing vessel (3) so that solid particles of CF polymers produced from the decomposition components of the CF gas by the plasma may be prevented from flying and adhering to the inner wall (3b) and the surface of the parts in the processing chamber, and the CF polymers may be prevented from depositing.

摘要翻译： 一种能够减少CF聚合物在处理室中的沉积的等离子体处理装置。 等离子体处理装置（1）包括在下部具有大直径的等离子体处理容器（3），并且在上部具有小直径以在容器内限定处理室（2）。 处理室（2）中的压力降低到预定的真空气氛，并且将含有CF气体的处理气体引入处理室（2）并变成等离子体，从而使半导体晶片（34） 到期望的微处理。 在等离子体处理容器（3）的内壁（3b）的预定区域上形成AY 2 O 3喷涂涂层（41），使得固体颗粒 可以防止由等离子体的CF气体的分解成分产生的CF聚合物飞散并粘附到内壁（3b）和处理室中的部件的表面，并且可以防止CF聚合物沉积。

公开(公告)号：US06426477B1

公开(公告)日：2002-07-30

申请号：US09660194

申请日：2000-09-12

申请人： Chishio Koshimizu ,  Jun Ooyabu ,  Hideki Takeuchi ,  Akira Koshiishi

发明人： Chishio Koshimizu ,  Jun Ooyabu ,  Hideki Takeuchi ,  Akira Koshiishi

IPC分类号： B23K1000

CPC分类号： H01J37/32082 ,  H01J37/32165

摘要： A plasma processing method includes supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of staring plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on a surface of the substrate. A plasma processing apparatus is also provided.

摘要翻译： 一种等离子体处理方法包括向承载衬底的第一电极提供低频偏压，并将高频电力提供给面对第一电极的第二电极，其中，将低频偏压提供给第一电极， 通过高频功率的能量凝固等离子体，具有足以在衬底的表面上形成离子鞘的电力。 还提供了一种等离子体处理装置。

公开(公告)号：US08512510B2

公开(公告)日：2013-08-20

申请号：US13108612

申请日：2011-05-16

申请人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

发明人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32082 ,  H01J37/32422 ,  H01J37/32935

摘要： A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

摘要翻译： 等离子体处理方法被布置成将预定的处理气体供给到其中放置目标衬底的等离子体产生空间中，并将处理气体转化为等离子体。 通过该等离子体对衬底进行预定的等离子体处理。 等离子体的密度的空间分布和等离子体中的自由基密度的空间分布相对于衬底彼此独立地通过与衬底相对的面对部分彼此独立地控制，以在衬底的整个靶表面上形成预定的工艺状态 。

公开(公告)号：US07494561B2

公开(公告)日：2009-02-24

申请号：US11137492

申请日：2005-05-26

申请人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

发明人： Akira Koshiishi ,  Jun Hirose ,  Masahiro Ogasawara ,  Taichi Hirano ,  Hiromitsu Sasaki ,  Tetsuo Yoshida ,  Michishige Saito ,  Hiroyuki Ishihara ,  Jun Ooyabu ,  Kohji Numata

IPC分类号： C23C16/00 ,  H01L21/306 ,  C23F1/00

CPC分类号： H01J37/32449 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32587

摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.

摘要翻译： 一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。 第一上电极被设置成具有环形并且面对放置在处理容器内的目标衬底。 第二上电极径向设置在第一上电极内并与其电绝缘。 第一馈电器被配置为以第一功率值将第一RF电源的第一RF输出提供给第一上电极。 第二馈电器从第一馈电器分支并且被配置为以小于第一功率值的第二功率值将第一RF电源的第一RF输出提供给第二上电极。