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    Semiconductor device manufacturing apparatus
    5.
    发明授权
    Semiconductor device manufacturing apparatus 有权
    半导体装置制造装置

    公开(公告)号：US08614140B2

    公开(公告)日：2013-12-24

    申请号：US13329677

    申请日：2011-12-19

    申请人： Ryuichi Asako ,  Gousuke Shiraishi ,  Shigeru Tahara

    发明人： Ryuichi Asako ,  Gousuke Shiraishi ,  Shigeru Tahara

    IPC分类号： H01L21/3205 ,  H01L21/308

    CPC分类号： H01L21/31058 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

    摘要： There is provided a semiconductor device manufacturing apparatus capable of recovering a damage of a low dielectric insulating film exposed to CO2 plasma to obtain the low dielectric insulating film in a good state, thus improving performance and reliability of a semiconductor device. The semiconductor device manufacturing apparatus includes: an etching processing mechanism for performing an etching process that etches a low dielectric insulating film formed on a substrate; a CO2 plasma processing mechanism for performing a CO2 plasma process that exposes the substrate to CO2 plasma after the etching process; a polarization reducing mechanism for performing a polarization reducing process that reduces polarization in the low dielectric insulating film after the CO2 plasma process; and a transfer mechanism for transferring the substrate.

    摘要翻译： 提供一种半导体器件制造装置，其能够回收暴露于CO 2等离子体的低介电绝缘膜的损坏，以获得处于良好状态的低介电绝缘膜，从而提高半导体器件的性能和可靠性。 半导体器件制造装置包括：蚀刻处理机构，用于进行蚀刻形成在基板上的低介电绝缘膜的蚀刻工艺; CO 2等离子体处理机构，用于执行在蚀刻工艺之后将衬底暴露于CO 2等离子体的CO 2等离子体工艺; 用于进行降低CO 2等离子体处理后的低介电绝缘膜的偏振的偏振降低处理的偏振减小机构; 以及用于转印衬底的转印机构。

    Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
    6.
    发明授权
    Semiconductor device manufacturing method and semiconductor device manufacturing apparatus 有权
    半导体器件制造方法和半导体器件制造装置

    公开(公告)号：US08101507B2

    公开(公告)日：2012-01-24

    申请号：US12580495

    申请日：2009-10-16

    申请人： Ryuichi Asako ,  Gousuke Shiraishi ,  Shigeru Tahara

    发明人： Ryuichi Asako ,  Gousuke Shiraishi ,  Shigeru Tahara

    IPC分类号： H01L21/3205 ,  H01L21/308

    CPC分类号： H01L21/31058 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

    摘要： There is provided a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of recovering a damage of a low dielectric insulating film exposed to CO2 plasma to obtain the low dielectric insulating film in a good state, thus improving performance and reliability of a semiconductor device. The semiconductor device manufacturing method includes: an etching process for etching a low dielectric insulating film formed on a substrate; a CO2 plasma process for exposing the substrate to CO2 plasma after the etching process; and a UV process for irradiating UV to the low dielectric insulating film after the CO2 plasma process.

    摘要翻译： 提供了能够恢复暴露于CO 2等离子体的低电介质绝缘膜的损坏的半导体器件制造装置和半导体器件制造方法，以获得处于良好状态的低介电绝缘膜，从而提高半导体器件的性能和可靠性 。 半导体器件制造方法包括：用于蚀刻形成在衬底上的低介电绝缘膜的蚀刻工艺; 用于在蚀刻工艺之后将衬底暴露于CO 2等离子体的CO 2等离子体工艺; 以及在CO 2等离子体处理之后将UV照射到低介电绝缘膜的UV工艺。

    SUBSTRATE PROCESSING APPARATUS
    7.
    发明申请
    SUBSTRATE PROCESSING APPARATUS 审中-公开
    基板加工设备

    公开(公告)号：US20090188428A1

    公开(公告)日：2009-07-30

    申请号：US12361004

    申请日：2009-01-28

    申请人： Isamu SAKURAGI ,  Shigeru Tahara ,  Kumiko Yamazaki ,  Ryo Nonaka ,  Morihiro Takanashi ,  Eiichi Nishimura

    发明人： Isamu SAKURAGI ,  Shigeru Tahara ,  Kumiko Yamazaki ,  Ryo Nonaka ,  Morihiro Takanashi ,  Eiichi Nishimura

    IPC分类号： B05C13/00 ,  B01J19/00

    CPC分类号： H01L21/67109 ,  H01L21/67017

    摘要： A substrate processing apparatus includes a processing vessel; a mounting table for mounting the substrate thereon in the processing vessel; a gas inlet unit provided in the processing vessel; a gas supply mechanism for supplying a hydrogen-containing gas into the processing vessel through the gas inlet unit; a gas discharge port provided at the processing vessel; a gas exhaust mechanism for exhausting an inside of the processing vessel through the gas discharge port; a catalyst provided in the processing vessel; and a heating unit for heating the catalyst. Hydrogen radicals are formed in the processing vessel by a catalytic cracking reaction between the hydrogen-containing gas and the catalyst of high temperature, and the substrate is processed by the hydrogen radicals.

    摘要翻译： 基板处理装置包括处理容器; 用于将基板安装在处理容器中的安装台; 设置在处理容器中的气体入口单元; 用于通过气体入口单元将含氢气体供应到处理容器中的气体供给机构; 设置在处理容器的气体排出口; 排气机构，用于通过排气口排出处理容器的内部; 设置在处理容器中的催化剂; 以及用于加热催化剂的加热单元。 通过含氢气体和高温催化剂之间的催化裂化反应在处理容器中形成氢根，并且通过氢原子处理衬底。

    DEPOSIT REMOVAL METHOD
    8.
    发明申请
    DEPOSIT REMOVAL METHOD 有权
    沉积物去除方法

    公开(公告)号：US20140083979A1

    公开(公告)日：2014-03-27

    申请号：US14116952

    申请日：2012-05-10

    申请人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

    发明人： Shigeru Tahara ,  Eiichi Nishimura ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Hisashi Okuchi ,  Mitsuhiro Omura

    IPC分类号： B05D3/14

    CPC分类号： B05D3/145 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/31116

    摘要： A deposit removal method for removing deposits deposited on the surface of a pattern formed on a substrate by etching, includes an oxygen plasma treatment process for exposing the substrate to oxygen plasma while heating the substrate and a cycle treatment process for, after the oxygen plasma treatment process, repeating multiple cycles of a first period and a second period. In the first period, the substrate is exposed to a mixture of hydrogen fluoride gas and alcohol gas inside a processing chamber and the partial pressure of the alcohol gas is set to the first partial pressure. In the second period, the partial pressure of the alcohol gas is set to the second partial pressure lower than the first partial pressure by exhausting the inside of the processing chamber.

    摘要翻译： 通过蚀刻去除沉积在形成在基板上的图案的表面上的沉积物的沉积物去除方法包括用于在加热基板的同时将基板暴露于氧等离子体的氧等离子体处理工艺和在氧等离子体处理之后的循环处理 处理，重复第一周期和第二周期的多个周期。 在第一阶段中，将基板暴露于处理室内的氟化氢气体和醇气体的混合物，并将醇气体的分压设定为第一分压。 在第二时段，通过排出处理室的内部，将醇气体的分压设定为低于第一分压的第二分压。

    Etching apparatus
    9.
    发明授权
    Etching apparatus 有权

    公开(公告)号：US08361275B2

    公开(公告)日：2013-01-29

    申请号：US13415566

    申请日：2012-03-08

    申请人： Shigeru Tahara ,  Masaru Nishino

    发明人： Shigeru Tahara ,  Masaru Nishino

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/30604 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/31138

    摘要： When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion.

    Processing condition inspection and optimization method of damage recovery process, damage recovering system and storage medium
    10.
    发明授权
    Processing condition inspection and optimization method of damage recovery process, damage recovering system and storage medium 有权
    损坏恢复过程的处理条件检查和优化方法，损坏恢复系统和存储介质

    公开(公告)号：US08282984B2

    公开(公告)日：2012-10-09

    申请号：US12326507

    申请日：2008-12-02

    申请人： Reiko Sasahara ,  Jun Tamura ,  Shigeru Tahara

    发明人： Reiko Sasahara ,  Jun Tamura ,  Shigeru Tahara

    IPC分类号： C23C14/54

    CPC分类号： H01L22/12

    摘要： A processing condition inspection method of a damage recovery process for reforming a film having OH groups generated by damages from a predetermined process by using a processing gas includes preparing a substrate having an OH group containing resin film, measuring an initial film thickness of the OH group containing resin film, performing a damage recovery process on the substrate after measuring the initial film thickness, measuring a film thickness of the OH group containing resin film after the damage recovery process, calculating a film thickness difference of the OH group containing resin film before and after the damage recovery process, and determining whether processing conditions of the damage recovery process are appropriate or inappropriate based on the film thickness difference.

    摘要翻译： 通过使用处理气体对通过预定处理产生的OH基产生的具有OH基团的膜进行重整的损伤恢复处理的处理条件检查方法包括制备具有含OH基团的树脂膜的基板，测量OH基团的初始膜厚度 测定初始膜厚后，对基板进行损伤恢复处理，测定损伤恢复处理后的含有OH基的树脂膜的膜厚，计算含OH基树脂膜的膜厚差， 在损坏恢复处理之后，并且基于膜厚度差异确定损坏恢复处理的处理条件是否合适或不适当。