公开(公告)号：USD358413S

公开(公告)日：1995-05-16

申请号：US4118

申请日：1993-01-27

申请人： Akira Momose ,  Tetsuya Goto ,  Hidenori Sakai

设计人： Akira Momose ,  Tetsuya Goto ,  Hidenori Sakai

公开(公告)号：US20130125365A1

公开(公告)日：2013-05-23

申请号：US13578388

申请日：2011-02-09

申请人： Kazuki Goto ,  Tetsuya Goto ,  Masuichi Eguchi ,  Takao Kitagawa ,  Kazunari Kawamoto ,  Yutaka Ishida ,  Hirofumi Tsuchiya ,  Takayoshi Akamatsu

发明人： Kazuki Goto ,  Tetsuya Goto ,  Masuichi Eguchi ,  Takao Kitagawa ,  Kazunari Kawamoto ,  Yutaka Ishida ,  Hirofumi Tsuchiya ,  Takayoshi Akamatsu

IPC分类号： C09K11/06 ,  B23P11/00 ,  B32B38/00

CPC分类号： C08G77/395 ,  B32B38/00 ,  C09K11/06 ,  H01L33/501 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/181 ,  Y10T29/49826 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A phosphor-containing cured silicone that is a cured silicone which has a structure represented by general formulae (1) and/or (2) and also has units selected from general formulae (3) and/or (4), the phosphor-containing cured silicone includes a phosphor and particles having units selected from general formulae (3) and/or (4): wherein R1 to R3 are each a hydrogen atom, a methyl group, an ethyl group or a propyl group; X represents a methylene group, a dimethylene group or a trimethylene group, and may be the same or different; and R4 to R6 are each a substituted or unsubstituted monovalent hydrocarbon group, and may be the same or different. An object of the present invention is to provide a cured silicone in which a phosphor is uniformly dispersed, the cured silicone is characterized in that a silicone material has good thermal resistance and lightfastness. In addition, an object of the present invention is to provide a process for production of an LED-mounted substrate by which a plurality of LED elements can be continuously mounted in a batch manner.

摘要翻译： 具有由通式（1）和/或（2）表示的结构并且还具有选自通式（3）和/或（4）的单元的固化的硅氧烷的含磷光体的固化的硅氧烷， 固化的硅氧烷包括具有选自通式（3）和/或（4）的单元的荧光体和颗粒：其中R1至R3各自为氢原子，甲基，乙基或丙基; X表示亚甲基，二亚甲基或三亚甲基，可以相同或不同; R 4〜R 6各自为取代或未取代的一价烃基，可以相同或不同。 本发明的目的是提供一种固化的硅氧烷，其中磷光体均匀分散，固化的硅氧烷的特征在于硅酮材料具有良好的耐热性和耐光性。 此外，本发明的目的是提供一种用于制造LED安装基板的方法，通过该方法可以间歇地连续地安装多个LED元件。

公开(公告)号：US20110186425A1

公开(公告)日：2011-08-04

申请号：US12999985

申请日：2009-06-17

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Nobuaki Seki ,  Satoru Kawakami ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Nobuaki Seki ,  Satoru Kawakami ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3405 ,  H01J37/3423

摘要： A sputtering method includes disposing a plurality of thin and long deposition regions such that the thin and long deposition regions each cross in a first direction a circular reference region having a diameter equal to that of a semiconductor wafer, and are arranged at predetermined intervals in a second direction perpendicular to the first direction; disposing one of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial center of the circular reference region; disposing another of the plurality of thin and long deposition regions such that one side of sides thereof extending in the first direction passes through a substantial edge of the circular reference region; setting each of widths of the plurality of thin and long deposition regions such that a value obtained by summing the widths of the plurality of thin and long deposition regions in the second direction is substantially equal to a radius of the circular reference region; disposing a plurality of thin and long targets to face the corresponding thin and long deposition regions such that sputtering particles emitted from the plurality of thin and long targets are incident on the corresponding thin and long deposition regions; disposing a semiconductor wafer, while overlapping with the circular reference region; confining a plasma generated by a magnetron discharge in the vicinity of the targets, and emitting the sputtering particles from the targets; and rotating the semiconductor wafer at a predetermined rotation speed by using a normal line passing through the center of the circular reference region as a rotation central axis, to deposit a film on a surface of the semiconductor wafer.

摘要翻译： 溅射方法包括设置多个薄且长的沉积区域，使得薄且长的沉积区域各自在第一方向上与具有与半导体晶片的直径相等的直径的圆形参考区域交叉，并且以预定间隔布置在 第二方向垂直于第一方向; 设置所述多个薄且长的沉积区域中的一个，使得其沿着所述第一方向延伸的侧面的一侧穿过所述圆形参考区域的大致中心; 设置多个薄且长的沉积区域中的另一个，使得其沿着第一方向延伸的侧面的一侧通过圆形参考区域的实质边缘; 设置多个薄和长沉积区域的宽度，使得通过将第二方向上的多个薄沉积区域和长沉积区域的宽度求和而获得的值基本上等于圆形参考区域的半径; 设置多个薄且长的靶以面对相应的薄和长沉积区域，使得从多个薄且长的靶发射的溅射颗粒入射到相应的薄和长的沉积区域; 在与圆形参考区域重叠的同时设置半导体晶片; 限制在靶附近由磁控管放电产生的等离子体，并从靶中发射溅射粒子; 并且通过使用通过圆形基准区域的中心的法线作为旋转中心轴以预定转速旋转半导体晶片，以在半导体晶片的表面上沉积膜。

公开(公告)号：US20100230387A1

公开(公告)日：2010-09-16

申请号：US12308333

申请日：2007-06-13

申请人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23F1/00 ,  C23C16/455 ,  C23C16/511 ,  B22F3/12 ,  B28B1/00

CPC分类号： B05B1/18 ,  C23C16/45565 ,  C23C16/45568 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32449

摘要： Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 μm or lower.

摘要翻译： 可以更完全地防止等离子体的逆流等离子体的发生或等离子体激发的点火，能够提供有效的等离子体激发的喷淋板。 在布置在等离子体处理装置的处理室102中的喷淋板105中，将用于等离子体激发的气体排放到处理室中，具有气体流动方向连通的孔的多孔气体通过体114被固定在所使用的纵向孔112​​上 作为用于等离子体激发的气体的放电路径。 由与多孔气体通过体114连通的孔形成的气体流路中的窄径的孔径为10μm以下。

公开(公告)号：US20100126848A1

公开(公告)日：2010-05-27

申请号：US12089331

申请日：2006-10-06

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A magnetron sputtering apparatus is provided whereby film formation speed can be improved by increasing instantaneous erosion density on a target, and the target life can be prolonged by moving an erosion region over time to prevent local wear of the target, and realize uniform wear. Multiple plate-like magnets are installed around a columnar rotating shaft, and the columnar rotating shaft is rotated, thereby forming a high-density erosion region on a target to increase film formation speed, and the erosion region is moved along with rotation of the columnar rotating shaft, thereby wearing the target uniformly.

摘要翻译： 提供一种磁控溅射装置，通过增加目标上的瞬时侵蚀密度可以提高成膜速度，通过随时间移动侵蚀区域可以延长目标寿命，以防止目标局部磨损，并实现均匀的磨损。 多个板状磁铁安装在柱状旋转轴的周围，柱状旋转轴旋转，从而在靶上形成高密度的侵蚀区域，以增加成膜速度，并且随着柱状体的旋转而使侵蚀区域移动 旋转轴，从而均匀地佩戴目标。

公开(公告)号：US20100059368A1

公开(公告)日：2010-03-11

申请号：US12594676

申请日：2008-04-04

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3405 ,  H01J37/3455

摘要： Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.

摘要翻译： 提供了一种磁控溅射装置，其增加靶上的瞬时等离子体密度以提高成膜速率。 磁控管溅射装置包括待加工的基板，安装成面向基板的靶材和安装在穿过靶材的基板相对侧的旋转磁体。 在磁控管溅射装置中，在目标表面上形成等离子体回路。 根据旋转磁体的旋转，等离子体回路产生，移动并沿旋转磁体的轴线方向消失。

公开(公告)号：US20090135109A1

公开(公告)日：2009-05-28

申请号：US12273745

申请日：2008-11-19

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka

IPC分类号： H01J1/62 ,  C23C14/35 ,  G09G3/30

CPC分类号： H01L51/5092 ,  H01L51/0021 ,  H01L51/5221 ,  H01L51/56

摘要： In an organic EL element having a transparent conductive electrode and a cathode opposed to the transparent conductive electrode, the cathode includes a film of a rare earth element that can be sputtered. The film of the rare earth element having a low work function, for example, a LaB6 film, can be formed uniformly over a wide area on an electron injection layer by a rotary magnet sputtering apparatus.

摘要翻译： 在具有透明导电电极和与透明导电电极相对的阴极的有机EL元件中，阴极包括能够被溅射的稀土元素的膜。 可以通过旋转磁体溅射装置在电子注入层的广泛区域上均匀地形成具有低功函数的稀土元素的膜，例如LaB 6膜。

公开(公告)号：US20070030568A1

公开(公告)日：2007-02-08

申请号：US11492217

申请日：2006-07-25

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Nobuaki Seki ,  Satoshi Ikeda ,  Kouichi Niikura

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Nobuaki Seki ,  Satoshi Ikeda ,  Kouichi Niikura

IPC分类号： G02B1/10 ,  F21V9/04 ,  G02F1/1335 ,  B32B17/06 ,  C23C14/00 ,  C23C14/32

CPC分类号： G02B5/0858 ,  C23C14/022 ,  C23C14/205 ,  C23C14/345 ,  C23C14/584 ,  C23C16/0281 ,  C23C16/345 ,  C23C28/322 ,  C23C28/34 ,  C23C28/36 ,  G02B6/0055

摘要： A reflector member of the present invention includes a silver thin film formed on a substrate and a silicon nitride protection film formed on the silver thin film. The silver thin film has the (111) orientation as the principal plane orientation. Preferably, 99% or more of the silver thin film has the (111) orientation as the principal plane orientation. The thickness of the silver thin film is in a range of 100 nm to 350 nm.

摘要翻译： 本发明的反射构件包括形成在基板上的银薄膜和形成在银薄膜上的氮化硅保护膜。 银薄膜具有（111）取向作为主平面取向。 优选地，99％以上的银薄膜的（111）取向为主面取向。 银薄膜的厚度在100nm至350nm的范围内。

公开(公告)号：USD314582S

公开(公告)日：1991-02-12

申请号：US179131

申请日：1988-04-08

申请人： Yoshihisa Minakawa ,  Tetsuya Goto

设计人： Yoshihisa Minakawa ,  Tetsuya Goto

公开(公告)号：USD304596S

公开(公告)日：1989-11-14

申请号：US935570

申请日：1986-11-26

申请人： Tetsuya Goto

设计人： Tetsuya Goto