公开(公告)号：US08915999B2

公开(公告)日：2014-12-23

申请号：US12446913

申请日：2007-09-26

申请人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

IPC分类号： C23C16/455 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

摘要翻译： 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

公开(公告)号：US20100230387A1

公开(公告)日：2010-09-16

申请号：US12308333

申请日：2007-06-13

申请人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23F1/00 ,  C23C16/455 ,  C23C16/511 ,  B22F3/12 ,  B28B1/00

CPC分类号： B05B1/18 ,  C23C16/45565 ,  C23C16/45568 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32449

摘要： Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 μm or lower.

摘要翻译： 可以更完全地防止等离子体的逆流等离子体的发生或等离子体激发的点火，能够提供有效的等离子体激发的喷淋板。 在布置在等离子体处理装置的处理室102中的喷淋板105中，将用于等离子体激发的气体排放到处理室中，具有气体流动方向连通的孔的多孔气体通过体114被固定在所使用的纵向孔112​​上 作为用于等离子体激发的气体的放电路径。 由与多孔气体通过体114连通的孔形成的气体流路中的窄径的孔径为10μm以下。

公开(公告)号：US20100288439A1

公开(公告)日：2010-11-18

申请号：US12675273

申请日：2008-08-21

申请人： Kiyotaka Ishibashi ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Masahiro Okesaku

发明人： Kiyotaka Ishibashi ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Masahiro Okesaku

IPC分类号： H01L21/465 ,  C23C16/50 ,  C23C16/511 ,  C23C16/455 ,  H01L21/46 ,  B26F1/00

CPC分类号： C23C16/45565 ,  C23C16/50 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T83/0481

摘要： A disclosed top plate that is configured as a solid part and provided in an opening in a ceiling portion of a plasma process chamber whose inside is evacuatable to vacuum includes plural gas conduits formed in a horizontal direction of the top plate; and gas ejection holes that are open in a first surface of the top plate, the first surface facing the inside of the plasma process chamber and in gaseous communication with the plural gas conduits.

摘要翻译： 被构造为实心部分并且设置在内部可抽真空的等离子体处理室的顶部的开口中的公开的顶板包括在顶板的水平方向上形成的多个气体导管; 以及在顶板的第一表面中敞开的气体喷射孔，第一表面面对等离子体处理室的内部并与多个气体管道气体连通。

公开(公告)号：US20100178775A1

公开(公告)日：2010-07-15

申请号：US12446913

申请日：2007-09-26

申请人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

IPC分类号： H01L21/465 ,  C23C16/00 ,  C23C16/511 ,  H01L21/469 ,  C23F1/00 ,  C23F1/08 ,  C23C16/455 ,  B28B1/44

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

摘要翻译： 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

公开(公告)号：US20090311869A1

公开(公告)日：2009-12-17

申请号：US12374405

申请日：2007-07-18

申请人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

IPC分类号： H01L21/465 ,  C23C16/455 ,  H05H1/46 ,  B29C65/02

CPC分类号： C23C16/45565 ,  H01J37/3244

摘要： Provided is a shower plate capable of more securely preventing the occurrence of backflow of plasma and enabling efficient plasma excitation. A shower plate 106 is disposed in a processing chamber 102 of a plasma processing apparatus and is provided with a plurality of gas discharge holes 113a for discharging a plasma excitation gas to generate plasma in the processing chamber 102, wherein an aspect ratio of a length of the gas discharge hole to a hole diameter thereof (length/hole diameter) is equal to or greater than about 20. The gas discharge holes 113a are made of ceramics members 113 which are separated from the shower plate 106, and the ceramics members 113 are installed in vertical holes 105 opened in the shower plate 106.

摘要翻译： 提供一种能够更可靠地防止等离子体回流的发生并能够实现有效的等离子体激发的喷淋板。 喷淋板106设置在等离子体处理装置的处理室102中，并且设置有多个用于排出等离子体激发气体以在处理室102中产生等离子体的气体排出孔113a，其中长度 气体排出孔的孔径（长度/孔径）为大于等于20°。排气孔113a由与喷淋板106分离的陶瓷部件113构成，陶瓷部件113为 安装在在淋浴板106上打开的垂直孔105中。

公开(公告)号：US08372200B2

公开(公告)日：2013-02-12

申请号：US12308333

申请日：2007-06-13

申请人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

IPC分类号： C23C16/455 ,  C23C16/00 ,  H01L21/3065

CPC分类号： B05B1/18 ,  C23C16/45565 ,  C23C16/45568 ,  C23C16/511 ,  H01J37/3244 ,  H01J37/32449

摘要： Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 μm or lower.

摘要翻译： 可以更完全地防止等离子体的逆流等离子体的发生或等离子体激发的点火，能够提供有效的等离子体激发的喷淋板。 在布置在等离子体处理装置的处理室102中的喷淋板105中，将用于等离子体激发的气体排放到处理室中，具有气体流动方向连通的孔的多孔气体通过体114被固定在所使用的纵向孔112​​上 作为用于等离子体激发的气体的放电路径。 由与多孔气体通过体114连通的孔形成的气体流路中的窄径的孔径为10μm以下。

公开(公告)号：US20090286405A1

公开(公告)日：2009-11-19

申请号：US12304289

申请日：2007-06-13

申请人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tetsuya Goto ,  Tadahiro Ohmi ,  Kiyotaka Ishibashi

IPC分类号： H01L21/3065 ,  C23C16/00 ,  H01L21/30 ,  B01J19/08

CPC分类号： H01J37/32449 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/511 ,  H01J37/3244

摘要： Provided is a shower plate in which there's no need for a cover plate. The shower plate 105 is disposed in a processing chamber 102 of a plasma processing apparatus, for discharging a plasma excitation gas to generate plasma in the processing chamber 102, and the shower plate 105 includes a horizontal hole 111 for introducing the plasma excitation gas into the shower plate 105 from a gas inlet port 110 of the plasma processing apparatus; and a vertical hole 112 communicating with the horizontal hole 111, wherein the shower plate 105 is formed as a single body.

摘要翻译： 提供了不需要盖板的淋浴板。 喷淋板105设置在等离子体处理装置的处理室102中，用于在处理室102中排出等离子体激发气体以产生等离子体，并且喷淋板105包括用于将等离子体激发气体引入到等离子体激发气体的水平孔111 来自等离子体处理装置的气体入口110的喷淋板105; 以及与水平孔111连通的垂直孔112，其中喷淋板105形成为单体。

公开(公告)号：US20120267048A1

公开(公告)日：2012-10-25

申请号：US13454513

申请日：2012-04-24

申请人： Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa

发明人： Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa

IPC分类号： B05C5/00

CPC分类号： H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

摘要： A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.

摘要翻译： 等离子体处理装置包括处理室，载物台，电介质构件，微波引入装置，注射器和电场屏蔽。 处理室在其中具有处理空间。 工作台设置在处理室内。 电介质构件具有通孔并且设置成面向台。 微波引入装置经由电介质构件将微波引入处理空间。 喷射器具有至少一个通孔，并且由介电材料制成，例如大体电介质材料。 喷射器设置在电介质构件内。 介电构件的注射器和通孔形成用于将处理气体供应到处理空间的路径。 电场屏蔽封闭注射器。

公开(公告)号：US20120160809A1

公开(公告)日：2012-06-28

申请号：US13391310

申请日：2010-08-16

申请人： Kiyotaka Ishibashi ,  Osamu Morita

发明人： Kiyotaka Ishibashi ,  Osamu Morita

IPC分类号： B44C1/22 ,  H01L21/3065 ,  H05H1/46 ,  C23C16/511

CPC分类号： H01J37/32192 ,  C23C16/455 ,  C23C16/511 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/3244 ,  H05H1/46 ,  H05H2001/463

摘要： A microwave supply unit 20 of a plasma processing apparatus 11 includes a stub member 51 configured to be extensible from the outer conductor 33 toward the inner conductor 32. The stub member 51 serves as a distance varying device for varying a distance in the radial direction between a part of the outer surface 36 of the inner conductor 32 and a facing member facing the part of the outer surface of the inner conductor 32 in the radial direction, i.e., the cooling plate protrusion 47. The stub member 51 includes a rod-shaped member 52 supported at the outer conductor 33 and configured to be extended in the radial direction; and a screw 53 as a moving distance adjusting member for adjusting a moving distance of the rod-shaped member 52 in the radial direction.

摘要翻译： 等离子体处理装置11的微波供给单元20包括构造成可从外导体33向内导体32延伸的短截线构件51.短截线构件51用作变距装置，用于改变径向方向上的距离 内导体32的外表面36的一部分和面向内径部分的内导体32的外表面的一部分的面对构件即冷却板突起47.短针构件51包括杆状 构件52支撑在外导体33处并且构造成沿径向方向延伸; 以及作为用于调节棒状构件52在径向上的移动距离的移动距离调节构件的螺钉53。

公开(公告)号：US07940009B2

公开(公告)日：2011-05-10

申请号：US12274650

申请日：2008-11-20

申请人： Kiyotaka Ishibashi ,  Toshihisa Nozawa

发明人： Kiyotaka Ishibashi ,  Toshihisa Nozawa

IPC分类号： H01B31/26 ,  C23C16/00

CPC分类号： H01J37/32192 ,  H01J37/32238

摘要： A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector means.

摘要翻译： 等离子体处理装置包括用于在内部进行等离子体处理的室，由用于密封该室的上侧的电介质材料制成的顶板和用作将高频波供应到室中的高频电源的天线部分 通过这个顶板。 顶板在其内设有反射构件。 反射部件的侧壁作为反射用于反射在顶板内部沿半径方向传播的高频波的波反射体。 或者，不能以顶板的凹部的侧壁用作波反射器装置的方式设置反射部件。