公开(公告)号：US06155202A

公开(公告)日：2000-12-05

申请号：US199944

申请日：1998-11-25

申请人： Akira Nakano ,  Sung Chul Kim ,  Koichi Fukuda ,  Yasuhiro Takeda ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Shoichi Ono

发明人： Akira Nakano ,  Sung Chul Kim ,  Koichi Fukuda ,  Yasuhiro Takeda ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Shoichi Ono

IPC分类号： H01J37/32 ,  C23C16/00 ,  H01J7/24 ,  H01J21/00

CPC分类号： H01J37/32082 ,  H01J37/32183

摘要： In a plasma processing apparatus, in a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode, one of the two electrodes which form a tuning capacitor also serves as the plasma excitation electrode. Alternatively, in a plasma processing apparatus, the side wall of a housing made from an electrically conductive member and accommodating a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode and a feeder for supplying high-frequency electric power from the high-frequency power source to the plasma excitation electrode through the matching circuit is formed not in parallel to the feeder.

摘要翻译： 在等离子体处理装置中，在高频电源和等离子体激励电极之间插入用于实现高频电源和等离子体激励电极之间的阻抗匹配的匹配电路中，形成调谐电容器的两个电极之一 也用作等离子体激发电极。 或者，在等离子体处理装置中，由导电构件制成的壳体的侧壁，并且容纳插入在高频电源和等离子体激励电极之间的匹配电路，以实现高频电源与高频电源之间的阻抗匹配 等离子体激励电极和用于通过匹配电路从高频电源向等离子体激励电极提供高频电力的馈线形成为不与馈线并联。

公开(公告)号：US06270618B1

公开(公告)日：2001-08-07

申请号：US09205800

申请日：1998-12-04

申请人： Akira Nakano ,  Sung Chul Kim ,  Koichi Fukuda ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Shoichi Ono

发明人： Akira Nakano ,  Sung Chul Kim ,  Koichi Fukuda ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Shoichi Ono

IPC分类号： C23F102

CPC分类号： H01J37/32174 ,  C23C16/4405 ,  H01J37/32082

摘要： A plasma processing apparatus is provided which does not require replacement of a band eliminator according to a frequency used, which is capable of performing chamber cleaning without replacing a resonance circuit, and which is capable of performing plasma cleaning of the inside of the chamber without using a bellows. The plasma processing apparatus includes a resonance circuit (band eliminator) for causing series resonance with a microwave circuit formed of at least a susceptor electrode and a processing chamber in order to trap plasma between a plasma excitation electrode and the susceptor electrode when the surface of a workpiece placed on the susceptor electrode is processed by plasma generated between the plasma excitation electrode and the susceptor electrode, which are provided inside the processing chamber; and for causing parallel resonance with the microwave circuit in order to diffuse plasma inside the processing chamber when performing plasma cleaning.

摘要翻译： 提供一种等离子体处理装置，其不需要根据所使用的频率来更换带除器，其能够执行腔室清洁而不更换谐振电路，并且能够在不使用腔室内进行等离子体清洁室内 一个波纹管。 等离子体处理装置包括用于与由至少一个基座电极和一个处理室形成的微波电路进行串联谐振的谐振电路（去波器），以便在等离子体激发电极和基座电极之间捕获等离子体时 放置在基座电极上的工件通过设置在处理室内部的等离子体激发电极和基座电极之间产生的等离子体进行处理; 并且用于与微波电路并联谐振，以便在进行等离子体清洗时在等离子体清洗中扩散处理室内的等离子体。

公开(公告)号：US06349670B1

公开(公告)日：2002-02-26

申请号：US09442539

申请日：1999-11-18

申请人： Akira Nakano ,  Koichi Fukuda ,  Sung Chul Kim ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Shoichi Ono

发明人： Akira Nakano ,  Koichi Fukuda ,  Sung Chul Kim ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Shoichi Ono

IPC分类号： C23C1600

CPC分类号： H01J37/32082 ,  G01R1/06772 ,  G01R27/02 ,  H01J37/32935

摘要： The invention provides a plasma equipment which is advantageous in that the suscepter impedance is small, the dependence on the frequency is low, the power consumption efficiency is high, the film forming speed is faster as compared with conventional plasma equipment, and the film quality is high. Metal plates AC short between a chamber wall and a shield of an electrode of the same DC potential as the chamber.

摘要翻译： 本发明提供一种等离子体设备，其优点在于，与常规等离子体设备相比，阻抗较小，对频率的依赖性低，功耗效率高，成膜速度更快，膜质量 高。 金属板在室壁与与室相同的DC电位的电极的屏蔽之间交流短路。

公开(公告)号：US5550091A

公开(公告)日：1996-08-27

申请号：US437606

申请日：1995-05-09

申请人： Koichi Fukuda ,  Tomofumi Oba ,  Masanori Miyazaki ,  Hirofumi Fukui ,  Chisato Iwasaki ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Masaru Kubota ,  Hitoshi Kitagawa ,  Akira Nakano ,  Osamu Yoshida

发明人： Koichi Fukuda ,  Tomofumi Oba ,  Masanori Miyazaki ,  Hirofumi Fukui ,  Chisato Iwasaki ,  Yasuhiko Kasama ,  Tadahiro Ohmi ,  Masaru Kubota ,  Hitoshi Kitagawa ,  Akira Nakano ,  Osamu Yoshida

IPC分类号： C23C14/06 ,  H01L21/02 ,  H01L21/28 ,  H01L21/31 ,  H01L21/318 ,  H01L21/331 ,  H01L21/336

CPC分类号： C23C14/0652 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/28008 ,  H01L21/3185 ,  H01L28/40 ,  H01L29/66765

摘要： There is provided an electronic device like a TFT using a silicon nitride insulating film of a single layer structure having an excellent dielectric voltage, and a method of producing the electronic device with reliability. In the electronic device, a conductive wiring pattern is deposited on a surface of an electrically insulated substrate, and an insulating layer is formed to cover the wiring pattern and the substrate. The insulating layer is made of a silicon nitride insulating film. A contact angle .theta. between the wiring pattern and the substrate is equals 60.degree. or more, and a value Tn1/Tg of a thickness Tn1 of the silicon nitride insulating film and a thickness Tg of the wiring pattern equals 2 or more. A horizontal distance Tn2 between a rise start position, where the silicon nitride film rises because of a step of the wiring pattern and the top end of the wiring pattern, and Tn1 are in a relation where 0.6.ltoreq.Tn2/Tn1.

摘要翻译： 提供了一种使用具有优异的介电电压的单层结构的氮化硅绝缘膜的TFT的电子器件，以及可靠地制造该电子器件的方法。 在电子设备中，在电绝缘基板的表面上沉积导电布线图案，并且形成绝缘层以覆盖布线图案和基板。 绝缘层由氮化硅绝缘膜制成。 布线图案和基板之间的接触角θ等于60°以上，氮化硅绝缘膜的厚度Tn1的值Tn1 / Tg和布线图案的厚度Tg等于2以上。 由于布线图案的台阶和布线图案的上端而形成的氮化硅膜的上升起始位置和Tn1之间的水平距离Tn2为0.6

公开(公告)号：US06452408B1

公开(公告)日：2002-09-17

申请号：US09843062

申请日：2001-04-26

申请人： Akira Nakano ,  Koichi Fukuda ,  Tadahiro Ohmi ,  Shoichi Ono

发明人： Akira Nakano ,  Koichi Fukuda ,  Tadahiro Ohmi ,  Shoichi Ono

IPC分类号： G01R3122

CPC分类号： H01J37/32082

摘要： The invention provides a plasma equipment which is advantageous in that the suscepter impedance is small, the dependence on the frequency is low, the power consumption efficiency is high, the film forming speed is faster as compared with conventional plasma equipment, and the film quality is high. Metal plates AC short between a chamber wall and a shield of an electrode of the same DC potential as the chamber.

摘要翻译： 本发明提供一种等离子体设备，其优点在于，与常规等离子体设备相比，阻抗较小，对频率的依赖性低，功耗效率高，成膜速度更快，膜质量 高。 金属板在室壁与与室相同的DC电位的电极的屏蔽之间交流短路。

公开(公告)号：US06274040B1

公开(公告)日：2001-08-14

申请号：US08811800

申请日：1997-03-06

申请人： Kenichi Mitsumori ,  Yasuhiko Kasama ,  Akira Nakano ,  Akira Abe ,  Tadahiro Ohmi

发明人： Kenichi Mitsumori ,  Yasuhiko Kasama ,  Akira Nakano ,  Akira Abe ,  Tadahiro Ohmi

IPC分类号： C02F148

CPC分类号： C02F1/48 ,  C02F2103/04 ,  Y10S210/90

摘要： There are provided a method and an apparatus for removing electrostatic charges from high resistivity liquid. An insulating film is formed on the surface of a conductive element which is in contact with the high resistivity liquid wherein the insulating film has such a thickness that a tunneling current may flow through the insulating film, thereby preventing the highly purified high resistivity liquid from being contaminated, as well as from becoming acid. Thus, objects to be treated with the high resistivity liquid become free of electrostatic charges without any contamination.

摘要翻译： 提供了一种从高电阻率液体中去除静电电荷的方法和装置。 在与高电阻率液体接触的导电元件的表面上形成绝缘膜，其中绝缘膜具有使隧道电流可以流过绝缘膜的厚度，从而防止高度纯化的高电阻率液体 污染，以及变酸。 因此，用高电阻率液体处理的物体没有静电电荷而没有任何污染。

公开(公告)号：US5480563A

公开(公告)日：1996-01-02

申请号：US219154

申请日：1994-03-29

申请人： Kenichi Mitsumori ,  Yasuhiko Kasama ,  Akira Nakano ,  Akira Abe ,  Tadahiro Ohmi

发明人： Kenichi Mitsumori ,  Yasuhiko Kasama ,  Akira Nakano ,  Akira Abe ,  Tadahiro Ohmi

IPC分类号： H05F3/00 ,  C02F1/48 ,  H05F3/02

CPC分类号： C02F1/48 ,  C02F2103/04 ,  Y10S210/90

摘要： There are provided a method and an apparatus for removing electrostatic charges from high resistivity liquid. An insulating film is formed on the surface of a conductive element which is in contact with the high resistivity liquid wherein the insulating film has such a thickness that a tunneling current may flow through the insulating film, thereby preventing the highly purified high resistivity liquid from being contaminated, as well as from becoming acid. Thus, objects to be treated with the high resistivity liquid become free of electrostatic charges without any contamination.

摘要翻译： 提供了一种从高电阻率液体中去除静电电荷的方法和装置。 在与高电阻率液体接触的导电元件的表面上形成绝缘膜，其中绝缘膜具有使隧道电流可以流过绝缘膜的厚度，从而防止高度纯化的高电阻率液体 污染，以及变酸。 因此，用高电阻率液体处理的物体没有静电电荷而没有任何污染。

公开(公告)号：US6148762A

公开(公告)日：2000-11-21

申请号：US246245

申请日：1999-02-08

申请人： Koichi Fukuda ,  Sung Chul Kim ,  Akira Nakano

发明人： Koichi Fukuda ,  Sung Chul Kim ,  Akira Nakano

IPC分类号： H05H1/46 ,  C23C16/458 ,  C23C16/50 ,  C23C16/509 ,  C23F4/00 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/68742 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/5096 ,  H01L21/67069 ,  H01L21/68757 ,  Y10S414/135

摘要： A plasma processing apparatus for stably and uniformly performing various kinds of processing by preventing unnecessary plasma discharge in the processing comprises a susceptor pin for supporting a substance to be processed, the susceptor pin being disposed to pass through a hole formed to a susceptor, projecting from the upper surface of the susceptor when the susceptor falls and falling by its own weight when the susceptor rises so as to be buried in the hole, and a guide for guiding the rising and falling directions of the susceptor pin, wherein the susceptor pin and the guide are composed of ceramics.

摘要翻译： 一种用于通过在处理中防止不必要的等离子体放电来稳定均匀地执行各种处理的等离子体处理装置包括用于支撑被处理物质的基座销，所述基座销设置成穿过形成于基座的孔， 当基座上升时，基座落下并且被埋在孔中时基座的上表面，以及用于引导基座销的上升和下降方向的引导件，其中，基座销和 指南由陶瓷组成。

公开(公告)号：US07225754B2

公开(公告)日：2007-06-05

申请号：US10811034

申请日：2004-08-27

申请人： Akira Nakano ,  Tadahiro Ohmi

发明人： Akira Nakano ,  Tadahiro Ohmi

IPC分类号： C23C16/00

CPC分类号： H01L22/20 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/32082 ,  H01L2924/0002 ,  H01L2924/014 ,  H01L2924/00

摘要： A plasma processing apparatus comprising a plurality of plasma processing units is provided. Each of the plasma processing units has a matching circuit connected between a radiofrequency generator and a plasma excitation electrode. Among these plasma processing units, a variation between the maximum and minimum values of input-terminal-side AC resistances RA of the matching circuits defined by =(RAmax−RAmin)/(RAmax+RAmin) is adjusted to be less than 0.5. A variation between the maximum and minimum values of output-terminal-side AC resistances RB of the matching circuits defined by =(RBmax−RBmin)/(RBmax+RBmin) is also adjusted to be less than 0.5. The plasma processing units can be adjusted to achieve substantially uniform plasma results in a shorter period of time.

摘要翻译： 提供了包括多个等离子体处理单元的等离子体处理装置。 每个等离子体处理单元具有连接在射频发生器和等离子体激励电极之间的匹配电路。 在这些等离子体处理单元中，由＆lt; RA＆gt; -RA＆lt; SUB＆gt;定义的匹配电路的输入端侧AC电阻RA的最大值和最小值之间的变化值RA > min ）/（RA最大 + RA ）被调整为小于0.5。 匹配电路的输出端侧AC电阻RB的最大值和最小值之间的变化由 =（RB> max <-R> SUB> / RB + RB ）也被调整为小于0.5。 可以调节等离子体处理单元以在更短的时间内实现基本均匀的等离子体结果。

公开(公告)号：US06954033B2

公开(公告)日：2005-10-11

申请号：US10302666

申请日：2002-11-21

申请人： Akira Nakano ,  Tadashi Kumagai ,  Tadahiro Ohmi

发明人： Akira Nakano ,  Tadashi Kumagai ,  Tadahiro Ohmi

IPC分类号： H01L21/205 ,  H01J37/32 ,  H01J7/24 ,  C23C16/00

CPC分类号： H01J37/32082 ,  H01J37/32183

摘要： A plasma processing apparatus of the present invention includes a matching circuit for impedance matching between a radio-frequency generator and a plasma processing chamber, and one or a plurality of impedance converting circuits provided between the matching circuit and the radio-frequency generator. The impedance converting circuit converts an impedance to decrease a difference in impedance to be matched by the matching circuit, thereby decreasing a change in the output impedance with a moving amount of a capacitance control of one of variable passive elements of the matching circuit, such as a load capacitor and a tuning capacitor. Therefore, a change in the impedance of the plasma processing chamber can be finely controlled.

摘要翻译： 本发明的等离子体处理装置包括用于射频发生器和等离子体处理室之间的阻抗匹配的匹配电路，以及设置在匹配电路和射频发生器之间的一个或多个阻抗转换电路。 阻抗转换电路将阻抗转换为减小匹配电路匹配的阻抗差，从而通过匹配电路的可变无源元件之一的电容控制的移动量来减小输出阻抗的变化，例如 负载电容器和调谐电容器。 因此，可以精细地控制等离子体处理室的阻抗的变化。