摘要:
A plasma processing apparatus is provided which does not require replacement of a band eliminator according to a frequency used, which is capable of performing chamber cleaning without replacing a resonance circuit, and which is capable of performing plasma cleaning of the inside of the chamber without using a bellows. The plasma processing apparatus includes a resonance circuit (band eliminator) for causing series resonance with a microwave circuit formed of at least a susceptor electrode and a processing chamber in order to trap plasma between a plasma excitation electrode and the susceptor electrode when the surface of a workpiece placed on the susceptor electrode is processed by plasma generated between the plasma excitation electrode and the susceptor electrode, which are provided inside the processing chamber; and for causing parallel resonance with the microwave circuit in order to diffuse plasma inside the processing chamber when performing plasma cleaning.
摘要:
In a plasma processing apparatus, in a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode, one of the two electrodes which form a tuning capacitor also serves as the plasma excitation electrode. Alternatively, in a plasma processing apparatus, the side wall of a housing made from an electrically conductive member and accommodating a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode and a feeder for supplying high-frequency electric power from the high-frequency power source to the plasma excitation electrode through the matching circuit is formed not in parallel to the feeder.
摘要:
A plasma processing apparatus for stably and uniformly performing various kinds of processing by preventing unnecessary plasma discharge in the processing comprises a susceptor pin for supporting a substance to be processed, the susceptor pin being disposed to pass through a hole formed to a susceptor, projecting from the upper surface of the susceptor when the susceptor falls and falling by its own weight when the susceptor rises so as to be buried in the hole, and a guide for guiding the rising and falling directions of the susceptor pin, wherein the susceptor pin and the guide are composed of ceramics.
摘要:
The invention provides a plasma equipment which is advantageous in that the suscepter impedance is small, the dependence on the frequency is low, the power consumption efficiency is high, the film forming speed is faster as compared with conventional plasma equipment, and the film quality is high. Metal plates AC short between a chamber wall and a shield of an electrode of the same DC potential as the chamber.
摘要:
There is provided an electronic device like a TFT using a silicon nitride insulating film of a single layer structure having an excellent dielectric voltage, and a method of producing the electronic device with reliability. In the electronic device, a conductive wiring pattern is deposited on a surface of an electrically insulated substrate, and an insulating layer is formed to cover the wiring pattern and the substrate. The insulating layer is made of a silicon nitride insulating film. A contact angle .theta. between the wiring pattern and the substrate is equals 60.degree. or more, and a value Tn1/Tg of a thickness Tn1 of the silicon nitride insulating film and a thickness Tg of the wiring pattern equals 2 or more. A horizontal distance Tn2 between a rise start position, where the silicon nitride film rises because of a step of the wiring pattern and the top end of the wiring pattern, and Tn1 are in a relation where 0.6.ltoreq.Tn2/Tn1.
摘要:
The invention provides a plasma equipment which is advantageous in that the suscepter impedance is small, the dependence on the frequency is low, the power consumption efficiency is high, the film forming speed is faster as compared with conventional plasma equipment, and the film quality is high. Metal plates AC short between a chamber wall and a shield of an electrode of the same DC potential as the chamber.
摘要:
An image processing apparatus includes processing circuitry. The processing circuitry is configured to detect a positional shift amount of each of a plurality of images; select a composite target image from the plurality of images based on the detected positional shift amount; and obtain a composite image based on the positional shift amount and the selected composite target image.
摘要:
An imaging device including an image sensor, includes an image obtaining control unit that obtains plural continuous images of an object taken by the image sensor; a size determining unit that determines an image size of reduced images based on photographing information of at least one of the images, and generates reduced images from the images obtained by the image obtaining control unit based on the determined image size; a motion vector detection unit that detects a motion vector of the reduced images; and an image synthesis unit that synthesizes the images obtained by the image obtaining control unit based on the motion vector detected by the motion vector detection unit to obtain a synthesized image.
摘要:
The present invention provides a building to be constructed without any troublesome work.The building is a building comprising a construction material 12, which has a plane heat insulation material 14 in which a madreporic core material is enclosed in a vacuum and a plate structural face material 12a, and whose heat insulation material 14 and structural face material 12a are combined in a way that a plane surface of the heat insulation material 14 faces to one side of a plane surface of the structural face material 12a, and further comprising a wooden base 9b assembled on the construction material 12 and an external wall finishing material 3 fixed on the wooden base 9b.
摘要:
An insulation box unit and a refrigerator of the present invention employs i) rigid urethane foam with a 8.0 MPa-or-greater bending modulus, and a 60 kg/m3-or-lower density, and ii) a vacuum insulation material. The proper bending modulus provides the insulation box unit with a substantial strength, even in the case that the coverage of the vacuum insulation material with respect to the surface of the outer box exceeds 40%. The proper density prevents the insulation box unit from poor insulation efficiency due to undesired solid thermal conductivity. Despite of an extended use of the vacuum insulation material, the insulation box unit offers an excellent insulation efficiency and therefore accelerates energy saving. According to the recycling method of the present invention, rigid urethane foam formed of tolylene di-isocyanate composition, which was separated from refrigerator wastes, is recycled as a material of rigid urethane foam.
摘要翻译:本发明的绝缘箱单元和冰箱采用i)具有8.0MPa或更大弯曲模量和60kg / m 3以上低密度的硬质聚氨酯泡沫,ii )真空绝缘材料。 即使在真空绝热材料相对于外箱表面的覆盖范围超过40%的情况下,适当的弯曲模量也提供了具有相当强度的绝缘箱单元。 适当的密度防止绝缘箱单元由于不期望的固体导热性而具有差的绝缘效率。 尽管绝缘材料的使用得到了广泛的应用,绝缘箱单元提供了绝佳的绝缘效率,从而加速了节能。 根据本发明的再循环方法,将与冰箱废物分离的甲苯二异氰酸酯组合物形成的硬质聚氨酯泡沫作为刚性聚氨酯泡沫材料进行再循环。