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公开(公告)号：US20220416756A1
公开(公告)日：2022-12-29
申请号：US17527866
申请日：2021-11-16
Applicant: Akoustis,Inc.
Inventor： Craig Moe , Jeffrey M. Leathersich , Jeffrey B. Shealy
Abstract: A method of forming a resonator structure can be provided by forming one or more template layers on a substrate, (a) epitaxially forming an AlScN layer on the template layer to a first thickness, (b) epitaxially forming an AlGaN interlayer on the AlScN layer to a second thickness that is substantially less than the first thickness, and repeating operations (a) and (b) until a total thickness of all AlScN layers and AlGaN interlayers provides a target thickness for a single crystal AlScN/AlGaN superlattice resonator structure on the template layer.
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公开(公告)号：US20250055434A1
公开(公告)日：2025-02-13
申请号：US18294809
申请日：2022-09-12
Applicant: Akoustis, Inc.
Inventor： Craig Moe , Jeffrey M. Leathersich , Ramakrishna Vetury , Abhay Saranswarup Kochhar
Abstract: As disclosed herein, methods of forming piezoelectric layers having alternating polarizations and related bulk acoustic wave filter devices. Pursuant to these embodiments, a method of forming a piezoelectric resonator device can include forming a first material, including metal and nitrogen atoms, using a first process to provide a first piezoelectric layer having the metal and the nitrogen atoms arranged in a first polar orientation, to establish a first polarization for the first piezoelectric layer and forming a second material, including the metal and the nitrogen atoms on the first piezoelectric layer, using a second process to provide a second piezoelectric layer having the metal and the nitrogen atoms arranged in a second polar orientation, to establish a second polarization for the second piezoelectric layer that is opposite of the first polarization.
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公开(公告)号：US20230235459A1
公开(公告)日：2023-07-27
申请号：US17582613
申请日：2022-01-24
Applicant: Akoustis, Inc.
Inventor： Craig Moe , Jeffrey M. Leathersich
Abstract: An apparatus includes a chemical vapor deposition (CVD) reactor, an injector column that provides a metal organic precursor vapor into the CVD reactor, a heater in thermal communication with the injector column, and a control circuit configured to control the heater and thereby maintain the metal organic precursor vapor in the injector column above a saturation temperature. The control circuit may be configured to control the heater to maintain a temperature of the metal organic precursor vapor in the injector column in a temperature range from about 85 degrees Centigrade to about 200 degrees Centigrade. A temperature of the metal organic precursor vapor entering the injector column may be in a range from about 160 degrees Centigrade to about 200 degrees Centigrade and a pressure of the metal organic precursor vapor entering the injector column may be in a range from about 50 mbar to about 1000 mbar.
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公开(公告)号：US20240088860A1
公开(公告)日：2024-03-14
申请号：US18510119
申请日：2023-11-15
Applicant: Akoustis, Inc.
Inventor： Craig Moe , Jeffrey M. Leathersich
IPC: H03H3/02 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/13 , H03H9/17 , H03H9/54 , H10N30/00 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/086 , H10N30/85 , H10N30/87 , H10N30/88
CPC classification number: H03H3/02 , H03H9/02015 , H03H9/02118 , H03H9/0523 , H03H9/105 , H03H9/13 , H03H9/173 , H03H9/175 , H03H9/177 , H03H9/547 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/086 , H10N30/10513 , H10N30/85 , H10N30/875 , H10N30/877 , H10N30/88 , H03H2003/021 , H03H2003/025 , H10N30/072 , Y10T29/42
Abstract: A method of forming a piezoelectric thin film can include depositing a material on a first surface of a Si substrate to provide a stress neutral template layer. A piezoelectric thin film including a Group III element and nitrogen can be sputtered onto the stress neutral template layer and a second surface of the Si substrate that is opposite the first surface can be processed to remove that Si substrate and the stress neutral template layer to provide a remaining portion of the piezoelectric thin film. A piezoelectric resonator can be formed on the remaining portion of the piezoelectric thin film.
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公开(公告)号：US20230246618A1
公开(公告)日：2023-08-03
申请号：US18002339
申请日：2021-08-02
Applicant: Akoustis, Inc.
Inventor： Craig Moe , Jeffrey M. Leathersich
CPC classification number: H03H3/02 , C30B29/38 , C30B25/10 , C30B25/18 , C30B25/16 , H03H9/02015 , H03H2003/023
Abstract: MOCVD systems can be used to form single crystal piezoelectric ScxAl1−xN layers having a concentration of Sc in a range between about 4% and about 18% at temperatures in a range, for example, between about 800 degrees Centigrade and about 950 degrees Centigrade. The single crystal piezoelectric ScxAl1−xN layers can have a crystalline structure characterized by an XRD ω-rocking curve FWHM value in a range between about less than 1.0 degrees to about 0.001 degrees as measured about the omega angle as of the ScxAl1−xN (0002) film reflection.
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Patent Agency Ranking
公开(公告)号：US20220182034A1
公开(公告)日：2022-06-09
申请号：US17514590
申请日：2021-10-29
Applicant: Akoustis, Inc.
Inventor： Craig Moe , Jeffrey M. Leathersich , Dae Ho Kim , Zhiqiang Bi , Mary Winters
Abstract: A piezoelectric resonator can include a substrate and a piezoelectric aluminum nitride layer on the substrate, where the piezoelectric aluminum nitride layer is doped with a dopant selected from the group consisting of Si, Mg, Ge, C, Sc and/or Fe at a respective level sufficient to induce a stress in the piezoelectric aluminum nitride layer in a range between about 150 MPa compressive stress and about 300 MPa tensile stress.
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公开(公告)号：US20210246570A1
公开(公告)日：2021-08-12
申请号：US16784843
申请日：2020-02-07
Applicant: Akoustis, Inc.
Inventor： Craig Moe , Jeffrey M. Leathersich
IPC: C30B25/14 , C30B25/16 , C23C16/458 , C23C16/52 , C23C16/18 , H01L41/316
Abstract: An apparatus for forming semiconductor films can include a horizontal flow reactor including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position to form a reactor chamber. A central injector column can penetrate through the upper portion of the horizontal flow reactor into the reactor chamber, the central injector column configured to allow metalorganic precursors into the reactor chamber in the closed position. A heated metalorganic precursor line can be coupled to the central injector column and configured to heat a low vapor pressure metalorganic precursor vapor contained in the heated metalorganic precursor line upstream of the central injector column to a temperature range between about 70 degrees Centigrade and 200 degrees Centigrade and a processor circuit can be operatively coupled to the heated metalorganic precursor line and configured to maintain a temperature of the low vapor pressure metalorganic precursor vapor within the temperature range.
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公开(公告)号：US12102010B2
公开(公告)日：2024-09-24
申请号：US17193623
申请日：2021-03-05
Applicant: Akoustis, Inc.
Inventor： Craig Moe , Jeffrey M. Leathersich
IPC: H03H3/02 , H01L29/20 , H01L29/205 , H01L29/66 , H01L29/778 , H03H9/02 , H03H9/17 , H10N30/00 , H10N30/03 , H10N30/076 , H10N30/093 , H10N39/00
CPC classification number: H10N39/00 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L29/7786 , H03H3/02 , H03H9/02031 , H03H9/173 , H03H9/176 , H10N30/03 , H10N30/076 , H10N30/093 , H10N30/708 , H03H2003/021
Abstract: A method of forming a film can include heating a CVD reactor chamber containing a substrate to a temperature range between about 750 degrees Centigrade and about 950 degrees Centigrade, providing a first precursor comprising Al to the CVD reactor chamber in the temperature range, providing a second precursor comprising Sc to the CVD reactor chamber in the temperature range, providing a third precursor comprising nitrogen to the CVD reactor chamber in the temperature range, and forming the film comprising ScAlN on the substrate.
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公开(公告)号：US11618968B2
公开(公告)日：2023-04-04
申请号：US16784843
申请日：2020-02-07
Applicant: Akoustis, Inc.
Inventor： Craig Moe , Jeffrey M. Leathersich
IPC: C30B35/00 , C30B25/14 , C30B25/16 , H01L41/316 , C23C16/52 , C23C16/18 , C23C16/458
Abstract: An apparatus for forming semiconductor films can include a horizontal flow reactor including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position to form a reactor chamber. A central injector column can penetrate through the upper portion of the horizontal flow reactor into the reactor chamber, the central injector column configured to allow metalorganic precursors into the reactor chamber in the closed position. A heated metalorganic precursor line can be coupled to the central injector column and configured to heat a low vapor pressure metalorganic precursor vapor contained in the heated metalorganic precursor line upstream of the central injector column to a temperature range between about 70 degrees Centigrade and 200 degrees Centigrade and a processor circuit can be operatively coupled to the heated metalorganic precursor line and configured to maintain a temperature of the low vapor pressure metalorganic precursor vapor within the temperature range.
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公开(公告)号：US20210280634A1
公开(公告)日：2021-09-09
申请号：US17193623
申请日：2021-03-05
Applicant: Akoustis, Inc.
Inventor： Craig Moe , Jeffrey M. Leathersich
IPC: H01L27/20 , H01L29/20 , H01L29/205 , H01L29/778 , H01L29/66 , H01L41/316 , H03H3/02 , H03H9/02 , H03H9/17
Abstract: A method of forming a film can include heating a CVD reactor chamber containing a substrate to a temperature range between about 750 degrees Centigrade and about 950 degrees Centigrade, providing a first precursor comprising Al to the CVD reactor chamber in the temperature range, providing a second precursor comprising Sc to the CVD reactor chamber in the temperature range, providing a third precursor comprising nitrogen to the CVD reactor chamber in the temperature range, and forming the film comprising ScAlN on the substrate.
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