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    SOURCE AND BODY CONTACT STRUCTURE FOR TRENCH-DMOS DEVICES USING POLYSILICON
    1.
    发明申请
    SOURCE AND BODY CONTACT STRUCTURE FOR TRENCH-DMOS DEVICES USING POLYSILICON 有权
    使用POLYSILICON的TRENCH-DMOS器件的源和体接触结构

    公开(公告)号：US20140225188A1

    公开(公告)日：2014-08-14

    申请号：US14256843

    申请日：2014-04-18

    申请人： Alpha & Omega Semiconductor, LTD

    发明人： François Hébert ,  Anup Bhalla

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734

    摘要： A semiconductor device includes a gate electrode, a top source region disposed next to the gate electrode, a drain region disposed below the bottom of the gate electrode, a oxide disposed on top of the source region and the gate electrode, and a doped polysilicon spacer disposed along a sidewall of the source region and a sidewall of the oxide. Methods for manufacturing such device are also disclosed. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译： 半导体器件包括栅极电极，设置在栅电极旁边的顶部源极区域，设置在栅极电极底部的漏极区域，设置在源极区域和栅极电极顶部的氧化物以及掺杂多晶硅间隔物 沿着源区域的侧壁和氧化物的侧壁设置。 还公开了制造这种装置的方法。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    SOURCE AND BODY CONTACT STRUCTURE FOR TRENCH-DMOS DEVICES USING POLYSILICON
    2.
    发明申请
    SOURCE AND BODY CONTACT STRUCTURE FOR TRENCH-DMOS DEVICES USING POLYSILICON 有权
    使用POLYSILICON的TRENCH-DMOS器件的源和体接触结构

    公开(公告)号：US20160079414A1

    公开(公告)日：2016-03-17

    申请号：US14939106

    申请日：2015-11-12

    申请人： Alpha & Omega Semiconductor, LTD

    发明人： François Hébert ,  Anup Bhalla

    IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L29/08

    CPC分类号： H01L29/7813 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734

    摘要： A semiconductor device includes a gate electrode, a top source region disposed next to the gate electrode, a drain region disposed below the bottom of the gate electrode, a dielectric disposed on top of the gate electrode, and a doped polysilicon spacer disposed on the source region and along a sidewall of the dielectric. Methods for manufacturing such device are also disclosed. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译： 半导体器件包括栅电极，邻近栅电极设置的顶源区，设置在栅极底部下方的漏区，设置在栅电极顶部的电介质和设置在源极上的掺杂多晶硅间隔物 区域并且沿着电介质的侧壁。 还公开了制造这种装置的方法。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    Source and body contact structure for trench-DMOS devices using polysilicon
    3.
    发明授权
    Source and body contact structure for trench-DMOS devices using polysilicon 有权
    使用多晶硅的沟槽DMOS器件的源和体接触结构

    公开(公告)号：US09214544B2

    公开(公告)日：2015-12-15

    申请号：US14256843

    申请日：2014-04-18

    申请人： Alpha & Omega Semiconductor, LTD

    发明人： François Hébert ,  Anup Bhalla

    IPC分类号： H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L29/08 ,  H01L29/423 ,  H01L29/45

    CPC分类号： H01L29/7813 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734

    摘要： A semiconductor device includes a gate electrode, a top source region disposed next to the gate electrode, a drain region disposed below the bottom of the gate electrode, a oxide disposed on top of the source region and the gate electrode, and a doped polysilicon spacer disposed along a sidewall of the source region and a sidewall of the oxide. Methods for manufacturing such device are also disclosed. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译： 半导体器件包括栅极电极，设置在栅电极旁边的顶部源极区域，设置在栅极电极底部的漏极区域，设置在源极区域和栅极电极顶部的氧化物以及掺杂多晶硅间隔物 沿着源区域的侧壁和氧化物的侧壁设置。 还公开了制造这种装置的方法。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    Source and body contact structure for trench-DMOS devices using polysilicon
    4.
    发明授权
    Source and body contact structure for trench-DMOS devices using polysilicon 有权
    使用多晶硅的沟槽DMOS器件的源和体接触结构

    公开(公告)号：US09466710B2

    公开(公告)日：2016-10-11

    申请号：US14939106

    申请日：2015-11-12

    申请人： Alpha & Omega Semiconductor, LTD

    发明人： François Hébert ,  Anup Bhalla

    IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/45

    CPC分类号： H01L29/7813 ,  H01L29/086 ,  H01L29/0869 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734

    摘要： A semiconductor device includes a gate electrode, a top source region disposed next to the gate electrode, a drain region disposed below the bottom of the gate electrode, a dielectric disposed on top of the gate electrode, and a doped polysilicon spacer disposed on the source region and along a sidewall of the dielectric. Methods for manufacturing such device are also disclosed. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译： 半导体器件包括栅电极，邻近栅电极设置的顶源区，设置在栅极底部下方的漏区，设置在栅电极顶部的电介质和设置在源极上的掺杂多晶硅间隔物 区域并且沿着电介质的侧壁。 还公开了制造这种装置的方法。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。