公开(公告)号：US07648899B1

公开(公告)日：2010-01-19

申请号：US12074108

申请日：2008-02-28

申请人： Ananda Banerji ,  George Andrew Antonelli ,  Jennifer O'loughlin ,  Mandyam Sriram ,  Bart Van Schravendijk ,  Seshasayee Varadarajan

发明人： Ananda Banerji ,  George Andrew Antonelli ,  Jennifer O'loughlin ,  Mandyam Sriram ,  Bart Van Schravendijk ,  Seshasayee Varadarajan

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： H01L21/02074 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/36 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L21/76888 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Protective caps residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Protective caps are formed by depositing a source layer of dopant-generating material (e.g., material generating B, Al, Ti, etc.) over an exposed copper line, converting the upper portion of the source layer to a passivated layer (e.g., nitride or oxide) while allowing an unmodified portion of a dopant-generating source layer to remain in contact with copper, and, subsequently, allowing the dopant from the unmodified portion of source layer to controllably diffuse into and/or react with copper, thereby forming a thin protective cap within copper line. The cap may contain a solid solution or an alloy of copper with the dopant.

公开(公告)号：US07858510B1

公开(公告)日：2010-12-28

申请号：US12689803

申请日：2010-01-19

申请人： Ananda Banerji ,  George Andrew Antonelli ,  Jennifer O'loughlin ,  Mandyam Sriram ,  Bart van Schravendijk ,  Seshasayee Varadarajan

发明人： Ananda Banerji ,  George Andrew Antonelli ,  Jennifer O'loughlin ,  Mandyam Sriram ,  Bart van Schravendijk ,  Seshasayee Varadarajan

IPC分类号： H01L21/44 ,  B05D5/12

CPC分类号： C23C16/0227 ,  C23C16/0272 ,  C23C16/36 ,  H01L21/02074 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L21/76888 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Protective caps residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Protective caps are formed by depositing a first layer of aluminum-containing material over an exposed copper line by treating an oxide-free copper surface with an organoaluminum compound in an absence of plasma at a substrate temperature of at least about 350° C. The formed aluminum-containing layer is passivated either partially or completely in a chemical conversion which forms Al—N, Al—O or both Al—O and Al—N bonds in the layer. Passivation is performed in some embodiments by contacting the substrate having an exposed first layer with an oxygen-containing reactant and/or nitrogen-containing reactant in the absence of plasma. Protective caps can be formed on substrates comprising exposed ULK dielectric. The aluminum-containing layer residing on the dielectric portion will typically spontaneously form non-conductive layer comprising Al—O bonds.

摘要翻译： 使用驻留在金属线和电介质扩散阻挡层（或蚀刻停止）层之间的界面处的保护盖来改善互连的电迁移性能。 通过在不存在等离子体的条件下，在至少约350℃的衬底温度下，通过用有机铝化合物处理无氧化物的铜表面，在暴露的铜线上沉积第一层含铝材料形成保护帽。形成 含铝层在化学转化中被部分或完全钝化，该化学转化在层中形成Al-N，Al-O或Al-O和Al-N键。 在一些实施方案中，通过在不存在等离子体的情况下将具有暴露的第一层的衬底与含氧反应物和/或含氮反应物接触来进行钝化。 可以在包括暴露的ULK电介质的基板上形成保护盖。 驻留在电介质部分上的含铝层通常会自发形成包含Al-O键的非导电层。

公开(公告)号：US07799671B1

公开(公告)日：2010-09-21

申请号：US12630457

申请日：2009-12-03

申请人： Ananda Banerji ,  George Andrew Antonelli ,  Jennifer O'Ioughlin ,  Mandyam Sriram ,  Bart van Schravendijk ,  Seshasayee Varadarajan

发明人： Ananda Banerji ,  George Andrew Antonelli ,  Jennifer O'Ioughlin ,  Mandyam Sriram ,  Bart van Schravendijk ,  Seshasayee Varadarajan

IPC分类号： H01L21/44

CPC分类号： H01L21/02074 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/36 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L21/76888 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Protective caps residing at an interface between metal lines and dielectric diffusion barrier (or etch stop) layers are used to improve electromigration performance of interconnects. Protective caps are formed by depositing a source layer of dopant-generating material (e.g., material generating B, Al, Ti, etc.) over an exposed copper line, converting the upper portion of the source layer to a passivated layer (e.g., nitride or oxide) while allowing an unmodified portion of a dopant-generating source layer to remain in contact with copper, and, subsequently, allowing the dopant from the unmodified portion of source layer to controllably diffuse into and/or react with copper, thereby forming a thin protective cap within copper line. The cap may contain a solid solution or an alloy of copper with the dopant.

摘要翻译： 使用驻留在金属线和电介质扩散阻挡层（或蚀刻停止）层之间的界面处的保护盖来改善互连的电迁移性能。 通过在暴露的铜线上沉积产生掺杂剂的材料的源层（例如，产生B，Al，Ti等的材料）形成保护盖，将源极的上部转化为钝化层（例如，氮化物 或氧化物），同时允许掺杂剂发生源层的未修饰部分与铜保持接触，并且随后允许来自源层的未修饰部分的掺杂剂可控地扩散到铜中和/或与铜反应，从而形成 铜线内薄保护帽。 盖可以包含铜与掺杂剂的固溶体或合金。

公开(公告)号：US08536073B2

公开(公告)日：2013-09-17

申请号：US13546937

申请日：2012-07-11

申请人： Vishwanathan Rangarajan ,  George Andrew Antonelli ,  Ananda Banerji ,  Bart Van Schravendijk

发明人： Vishwanathan Rangarajan ,  George Andrew Antonelli ,  Ananda Banerji ,  Bart Van Schravendijk

IPC分类号： H01L21/311 ,  H01L21/461 ,  H01L21/469

CPC分类号： H01L21/02274 ,  C23C16/30 ,  C23C16/325 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/3148 ,  H01L21/318 ,  H01L21/32139 ,  H01L21/67017 ,  H01L21/76813 ,  Y10S438/932 ,  Y10S438/942

摘要： Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of SixByCz, SixByNz, SixByCzNw, BxCy, and BxNy. In some embodiments, a hardmask film includes a germanium-rich GeNx material comprising at least about 60 atomic % of germanium. These hardmasks can be used in a number of back-end and front-end processing schemes in integrated circuit fabrication.

摘要翻译： 提供具有高硬度和低应力的硬掩模薄膜。 在一些实施方案中，膜具有在约-600MPa和600MPa之间的应力以及至少约12GPa的硬度。 在一些实施例中，通过在PECVD处理室中使用多个致密等离子体后处理沉积多个掺杂或未掺杂碳化硅的子层来制备硬掩模膜。 在一些实施例中，硬掩模膜包括选自SixByCz，SixByNz，SixByCzNw，BxCy和BxNy的高硬度含硼膜。 在一些实施例中，硬掩模膜包括富含锗的GeN x材料，其包含至少约60原子％的锗。 这些硬掩模可用于集成电路制造中的许多后端和前端处理方案。

公开(公告)号：US20110135557A1

公开(公告)日：2011-06-09

申请号：US12631691

申请日：2009-12-04

申请人： Vishwanathan Rangarajan ,  George Andrew Antonelli ,  Ananda Banerji ,  Bart van Schravendijk

发明人： Vishwanathan Rangarajan ,  George Andrew Antonelli ,  Ananda Banerji ,  Bart van Schravendijk

IPC分类号： H01L21/31 ,  C01B31/36

CPC分类号： H01L21/02274 ,  C23C16/30 ,  C23C16/325 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/3148 ,  H01L21/318 ,  H01L21/32139 ,  H01L21/67017 ,  H01L21/76813 ,  Y10S438/932 ,  Y10S438/942

摘要： Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of SixByCz, SixByNz, SixByCzNw, BxCy, and BxNy. In some embodiments, a hardmask film includes a germanium-rich GeNx material comprising at least about 60 atomic % of germanium. These hardmasks can be used in a number of back-end and front-end processing schemes in integrated circuit fabrication.

公开(公告)号：US08247332B2

公开(公告)日：2012-08-21

申请号：US12631691

申请日：2009-12-04

申请人： Vishwanathan Rangarajan ,  George Andrew Antonelli ,  Ananda Banerji ,  Bart van Schravendijk

发明人： Vishwanathan Rangarajan ,  George Andrew Antonelli ,  Ananda Banerji ,  Bart van Schravendijk

IPC分类号： H01L21/311 ,  H01L21/461 ,  H01L21/469

CPC分类号： H01L21/02274 ,  C23C16/30 ,  C23C16/325 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/3148 ,  H01L21/318 ,  H01L21/32139 ,  H01L21/67017 ,  H01L21/76813 ,  Y10S438/932 ,  Y10S438/942

摘要： Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of SixByCz, SixByNz, SixByCzNw, BxCy, and BxNy. In some embodiments, a hardmask film includes a germanium-rich GeNx material comprising at least about 60 atomic % of germanium. These hardmasks can be used in a number of back-end and front-end processing schemes in integrated circuit fabrication.