摘要:
Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE-Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.
摘要:
Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE−Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.
摘要:
Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE-Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.
摘要:
Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE-Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.
摘要:
Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE−Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.
摘要:
At least some of the interconnection signaling on a programmable logic device (“PLD”) is by differential signaling using differential driver circuitry to apply differential signals to a pair of conductors that extend to differential receiver circuitry. Such differential interconnection signaling helps the PLD operate satisfactorily with lower power supply voltages. The conductors in each differential signaling pair may cross over one another at various intervals in order to help reduce the adverse effects of capacitive coupling between adjacent and parallel signaling paths.
摘要:
At least some of the interconnection signaling on a programmable logic device (“PLD”) is by differential signaling using differential driver circuitry to apply differential signals to a pair of conductors that extend to differential receiver circuitry. Such differential interconnection signaling helps the PLD operate satisfactorily with lower power supply voltages. The conductors in each differential signaling pair may cross over one another at various intervals in order to help reduce the adverse effects of capacitive coupling between adjacent and parallel signaling paths.
摘要:
A programmable logic array integrated circuit has a number of programmable logic modules which are grouped together in a plurality of logic array blocks ("LABs"). The LABs are arranged on the circuit in a two dimensional array. A conductor network is provided for interconnecting any logic module with any other logic module. In addition, adjacent or nearby logic modules are connectable to one another for such special purposes as providing a carry chain between logic modules and/or for connecting two or more modules together to provide more complex logic functions without having to make use of the general interconnection network. Another network of so-called fast or universal conductors is provided for distributing widely used logic signals such as clock and clear signals throughout the circuit. Multiplexers can be used in various ways to reduce the number of programmable interconnections required between signal conductors. A relatively large block of random access memory ("RAM") may be provided on the device for use as read-only memory ("ROM") or RAM during operation of the device to perform logic. The RAM block is connected in the circuitry of the device so that it can be programmed and verified compatibly with other memory on the device. Thereafter the circuitry of the RAM block allows it to be switched over to operation as RAM or ROM during logic operation of the device.
摘要:
A relatively large block of random access memory ("RAM") may be provided on a programmable logic array integrated circuit device for use as read-only memory ("ROM") or RAM during operation of the device to perform logic. The RAM block is connected in the circuitry of the device so that it can be programmed and verified compatibly with other memory on the device. Thereafter the circuitry of the RAM block allows it to be switched over to operation as RAM or ROM during logic operation of the device.
摘要:
Enhanced passgate structures for use in low-voltage systems are presented in which the influence of Vt on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the VGATE-Vt limit for signals propagated through NMOS passgates is raised by applying a higher VGATE; in another arrangement, the Vt is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.