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68 条记录 (耗时 0.019 秒)

    Method to improve LDD corner control with an in-situ film for local interconnect processing
    1.
    发明授权
    Method to improve LDD corner control with an in-situ film for local interconnect processing 失效
    用于局部互连处理的用于改善LDD角部控制的方法

    公开(公告)号：US06483153B1

    公开(公告)日：2002-11-19

    申请号：US09418316

    申请日：1999-10-14

    申请人： Angela Hui ,  Paul Besser ,  Minh-Van Ngo

    发明人： Angela Hui ,  Paul Besser ,  Minh-Van Ngo

    IPC分类号： H01L2976

    CPC分类号： H01L21/76897 ,  H01L21/76895

    摘要： A method to improve LDD corner control during a local interconnect trench oxide etch on a semiconductor device by providing a first etch stop layer over the gate and active regions in the substrate and further providing thereon a second etch stop layer made of polysilicon and having of a different composition than that of the first etch stop layer. By forming a second etch stop layer of polysilicon the present invention improves the selectivity of the local interconnect trench oxide etch, thereby improving the ability of the first and second etch stop layers to stop the etch process at the critical interfaces.

    摘要翻译： 一种在半导体器件上的局部互连沟槽氧化物蚀刻期间，通过在衬底上的栅极和有源区上提供第一蚀刻停止层并且还在其上提供由多晶硅制成的第二蚀刻停止层来改善LDD拐角控制的方法， 不同于第一蚀刻停止层的组成。 通过形成多晶硅的第二蚀刻停止层，本发明改善了局部互连沟槽氧化物蚀刻的选择性，从而提高了第一和第二蚀刻停止层在关键界面处停止蚀刻工艺的能力。

    Ultraviolet radiation blocking interlayer dielectric
    5.
    发明授权
    Ultraviolet radiation blocking interlayer dielectric 有权
    紫外辐射阻挡层间电介质

    公开(公告)号：US08022468B1

    公开(公告)日：2011-09-20

    申请号：US11091519

    申请日：2005-03-29

    申请人： Minh Van Ngo ,  Wenmei Li ,  Jeffrey A. Shields ,  Ning Cheng ,  Angela Hui ,  Cinti Xiaohua Chen

    发明人： Minh Van Ngo ,  Wenmei Li ,  Jeffrey A. Shields ,  Ning Cheng ,  Angela Hui ,  Cinti Xiaohua Chen

    IPC分类号： H01L29/66

    CPC分类号： H01L27/11521 ,  H01L23/552 ,  H01L27/11568 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A memory device may include a substrate, a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may also include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer. The memory device may further include an interlayer dielectric formed over the control gate and the substrate, where the interlayer dielectric includes a material that is substantially opaque to ultraviolet radiation.

    摘要翻译： 存储器件可以包括衬底，形成在衬底上的第一电介质层和形成在第一介电层上的电荷存储元件。 存储器件还可以包括形成在电荷存储元件上的第二介电层和形成在第二介电层上的控制栅极。 存储器件还可以包括在控制栅极和衬底上形成的层间电介质，其中层间电介质包括对紫外线辐射基本不透明的材料。

    Laser thermal annealing of silicon nitride for increased density and etch selectivity
    8.
    发明授权
    Laser thermal annealing of silicon nitride for increased density and etch selectivity 有权
    氮化硅的激光热退火以提高密度和蚀刻选择性

    公开(公告)号：US06706576B1

    公开(公告)日：2004-03-16

    申请号：US10096741

    申请日：2002-03-14

    申请人： Minh Van Ngo ,  Angela Hui

    发明人： Minh Van Ngo ,  Angela Hui

    IPC分类号： H01L2100

    CPC分类号： H01L27/11521 ,  H01L21/3185 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L27/115

    摘要： The density of a deposited silicon nitride layer is increased by laser thermal annealing in N2, thereby increasing etch selectivity with respect to an overlying oxide and, hence, avoiding damage to underlying silicide layers and gates. Embodiments include laser thermal annealing a silicon nitride layer deposited as an etch stop layer, e.g., in fabricating EEPROMs, to increase its density by up to about 8%, thereby increasing its etch selectivity with respect to an overlying BPSG layer to about {fraction (1/12)} to about {fraction (1/14)}.

    摘要翻译： 沉积的氮化硅层的密度通过在N 2中的激光热退火而增加，从而相对于上覆氧化物增加了蚀刻选择性，因此避免了对下面的硅化物层和栅极的损害。 实施例包括激光热退火沉积为蚀刻停止层的氮化硅层，例如在制造EEPROM中，将其密度增加高达约8％，从而将其相对于上覆的BPSG层的蚀刻选择性增加到约{部分（ 1/12至约{部分（1/14。