摘要:
A radiation sensitive oligomeric compound is described as the photoactive component with a base soluble phenolic matrix resin to provide improved photo-resist composition having high light-sensitivity, high resolution, excellent developer resistance and excellent resistance to thermal flow.
摘要:
The invention relates to a positive-acting photoresist composition containing a mixture of photoactive compounds. One component of the mixture is the esterification product of an o-quinonediazide sulfonyl compound with a phenolic resin. Another component of the mixture is the esterification product of an o-quinonediazide sulfonyl compound with a low molecular weight phenol having from one to three aryl groups and from one to three hydroxyl groups. A third photoactive component which may be present in the formulation is the esterification product of an o-quinonediazide sulfonyl compound with a relative high molecular weight, polyhydric, polynuclear phenol.
摘要:
A resin suitable for use as a photoresist that is the esterification product of an o-quinonediazide compound and an aromatic novolak resin. The aromatic novolak resin may be the condensation product of a reactive phenol with a bis(hydroxymethyl)phenol or an aromatic aldehyde. The aromatic resin may be chain extended by further reaction with an additional aldehyde. The resin has a maximum of 20 percent of its phenolic hydroxyl groups esterified with the o-quinonediazide sulfonate compound.
摘要:
A system and method is provided for recycling raw materials from a plurality waste streams generated by waste stream providers and includes a waste stream monitoring module for monitoring the plurality of waste streams and determining an amount of reusable raw materials contained in each of the plurality of waste streams. Also included is a reusable materials database for storing the amount of each of the raw materials contained in any of the plurality of waste streams. A user operating an access device communications with the reusable materials database for viewing the amount of each of said raw materials.
摘要:
A photoresist that is a mixture of the esterification product of an o-quinonediazide compound and a novolak resin and a high molecular weight phenol having from 2 to 5 phenolic groups and at least 4 diazo naphthoquinone groups. The extent of esterification of the novolak resin is up to 20 percent of the hydroxyl groups and the degree of esterification of the phenol is at least 50 percent of the phenolic hydroxyl groups. The preferred novolak resins are the aromatic novolak resin that are the condensation product of a reactive phenol with a bis(hydroxymethyl)phenol or an aromatic aldehyde, each alone or in the presence of a reactive phenol.
摘要:
This invention is directed to novel photoresist processes and compositions having high resolution novalac resins, high resolution photoactive components with several diazoquinone groups per molecule, and solvents having a high solvency power, better safety, improved photospeed, higher contrast and equivalent cast film thickness from lower percent solids formulations.
摘要:
Organic coating compositions, particularly antireflective coating compositions, are provided that comprise that comprise a component that comprises one or more uracil moieties. Preferred compositions of the invention are useful to reduce reflection of exposing radiation from a substrate back into an overcoated photoresist layer and/or function as a planarizing, conformal or via-fill layer.
摘要:
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have base-reactive groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.