公开(公告)号：US10770300B2

公开(公告)日：2020-09-08

申请号：US16572553

申请日：2019-09-16

Applicant: Applied Materials, Inc.

Inventor： Takashi Kuratomi ,  Avgerinos V. Gelatos ,  I-Cheng Chen ,  Faruk Gungor

IPC: H01L21/285 ,  C23C16/06 ,  C23C16/455 ,  C23C16/50 ,  C23C16/04 ,  C23C16/14 ,  C23C16/452 ,  H01J37/00 ,  H01L21/3205 ,  H01J37/32 ,  H01L21/67

Abstract: Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.

公开(公告)号：US20200013627A1

公开(公告)日：2020-01-09

申请号：US16572553

申请日：2019-09-16

Applicant: Applied Materials, Inc.

Inventor： Takashi Kuratomi ,  Avgerinos V. Gelatos ,  I-Cheng Chen ,  Faruk Gungor

IPC: H01L21/285 ,  C23C16/06 ,  C23C16/455 ,  C23C16/50 ,  C23C16/04 ,  C23C16/14 ,  C23C16/452 ,  H01L21/3205 ,  H01J37/00

Abstract: Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.

公开(公告)号：US11430661B2

公开(公告)日：2022-08-30

申请号：US16705119

申请日：2019-12-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Takashi Kuratomi ,  I-Cheng Chen ,  Avgerinos V. Gelatos ,  Pingyan Lei ,  Mei Chang ,  Xianmin Tang

IPC: H01L21/44 ,  H01L21/285 ,  H01J37/32 ,  C23C16/42 ,  H01L21/67

Abstract: Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

公开(公告)号：US20180122647A1

公开(公告)日：2018-05-03

申请号：US15802040

申请日：2017-11-02

Applicant: Applied Materials, Inc.

Inventor： Takashi Kuratomi ,  Avgerinos V. Gelatos ,  I-Cheng Chen ,  Faruk Gungor

IPC: H01L21/285 ,  C23C16/06 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01L21/28568 ,  C23C16/04 ,  C23C16/06 ,  C23C16/14 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/67167

Abstract: Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.

公开(公告)号：US10418246B2

公开(公告)日：2019-09-17

申请号：US15802040

申请日：2017-11-02

Applicant: Applied Materials, Inc.

Inventor： Takashi Kuratomi ,  Avgerinos V. Gelatos ,  I-Cheng Chen ,  Faruk Gungor

IPC: H01L21/285 ,  C23C16/06 ,  C23C16/455 ,  C23C16/50 ,  C23C16/04 ,  C23C16/14 ,  C23C16/452 ,  H01J37/00 ,  H01L21/3205 ,  H01L21/67

Abstract: Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.

公开(公告)号：US20180158686A1

公开(公告)日：2018-06-07

申请号：US15815932

申请日：2017-11-17

Applicant: Applied Materials, Inc.

Inventor： Avgerinos V. Gelatos ,  Takashi Kuratomi ,  Hyuck Lim ,  I-Cheng Chen ,  Mei Chang

IPC: H01L21/285 ,  H01L21/768 ,  C23C16/50 ,  C23C16/08

CPC classification number: H01L21/28518 ,  C23C16/045 ,  C23C16/08 ,  C23C16/50 ,  C23C16/505 ,  H01L21/02068 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76879 ,  H01L21/76889

Abstract: Methods to selectively deposit titanium-containing films on silicon-containing surfaces in high aspect ratio features of substrates comprise plasma-enhanced chemical vapor deposition (PECVD) process at a plasma powers in the range of about 1 to less than about 700 mWatts/cm2 and frequencies in the range of about 10 kHz to about 50 MHz. The titanium films may be selectively deposited with a selectivity in the range of at least about 1.3:1 metallic silicon surfaces relative to silicon dioxide surfaces.