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    MODEL-BASED PARAMETER ADJUSTMENTS FOR DEPOSITION PROCESSES
    1.
    发明公开
    MODEL-BASED PARAMETER ADJUSTMENTS FOR DEPOSITION PROCESSES 审中-公开

    公开(公告)号：US20230411222A1

    公开(公告)日：2023-12-21

    申请号：US17751955

    申请日：2022-05-24

    Applicant: Applied Materials, Inc.

    Inventor： Sam K. Lee ,  Paul R. McHugh

    IPC: H01L21/66 ,  C25D7/12 ,  C25D21/12 ,  G05B19/4099

    CPC classification number: H01L22/10 ,  C25D7/12 ,  G05B2219/45031 ,  G05B19/4099 ,  C25D21/12

    Abstract: A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer and a chemical tank that provides liquid to the processing station during a deposition process. The chemical tank may provide measurements of characteristics of the liquid to a controller. The controller may be configured to receive the measurements from the chemical tank; provide an input based on the measurements to a trained model that is configured to generate an output that adjusts an operating parameter of the first station such that the thickness uniformity of the material is closer to a target thickness uniformity; and cause the first station to deposit the material on a second wafer using the operating parameter as adjusted by the output.

    METHODS FOR INCREASING THE RATE OF ELECTROCHEMICAL DEPOSITION
    2.
    发明申请
    METHODS FOR INCREASING THE RATE OF ELECTROCHEMICAL DEPOSITION 审中-公开
    提高电化学沉积速率的方法

    公开(公告)号：US20160333492A1

    公开(公告)日：2016-11-17

    申请号：US14711639

    申请日：2015-05-13

    Applicant: Applied Materials, Inc.

    Inventor： Eric J. Bergman ,  Charles Sharbono ,  Sam K. Lee

    IPC: C25D5/08 ,  C25D7/00 ,  C25D5/02

    CPC classification number: C25D5/08 ,  C25D5/028 ,  C25D7/00 ,  C25D17/002 ,  C25D21/10

    Abstract: A method for electrochemically processing a microfeature workpiece includes contacting the first surface of the microfeature workpiece with a plating electrolyte in a plating chamber, wherein the plating electrolyte includes at least one metal ion, flowing the plating electrolyte from a first plating electrolyte inlet at the first end of the workpiece to a second plating electrolyte outlet at the second end of the workpiece across the center point of the workpiece, and electrochemically depositing the at least one metal ion onto the first surface of the workpiece. Another method for electrochemically processing a microfeature workpiece includes contacting a first surface of the microfeature workpiece with a plating electrolyte having at least one metal ion, heating the second surface of the workpiece using a heating method, and electrochemically depositing the at least one metal ion onto the first surface of the workpiece.

    Abstract translation: 一种用于电化学处理微特征工件的方法包括使微特征工件的第一表面与电镀室中的电镀电解液相接触，其中电镀电解质包括至少一种金属离子，使电镀电解液从第一电镀电解液入口流出 工件的端部穿过工件的中心点在工件的第二端处的第二电镀电解质出口，以及将至少一种金属离子电化学沉积到工件的第一表面上。 用于电化学处理微特征工件的另一种方法包括使微特征工件的第一表面与具有至少一种金属离子的电镀电解液接触，使用加热方法加热工件的第二表面，并将至少一种金属离子电化学沉积到 工件的第一个表面。

    ELECTROPLATING METHODS FOR SEMICONDUCTOR SUBSTRATES
    4.
    发明申请
    ELECTROPLATING METHODS FOR SEMICONDUCTOR SUBSTRATES 有权
    用于半导体衬底的电镀方法

    公开(公告)号：US20150225866A1

    公开(公告)日：2015-08-13

    申请号：US14222407

    申请日：2014-03-21

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Sam K. Lee ,  Charles Sharbono

    IPC: C25D5/48

    CPC classification number: C25D5/48 ,  C23C18/1689 ,  C25D5/022 ,  C25D7/12 ,  C25F3/02 ,  C25F3/16 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/7684 ,  H01L21/76898

    Abstract: A non-uniform initial metal film is non-unniformly deplated to provide a more uniform metal film on a substrate. Electrochemical deplating may be performed by placing the substrate in a deplating bath formulated specifically for deplating, rather than for plating. The deplating bath may have a throwing power of 0.3 or less; or a bath conductivity of 1 mS/cm to 250 mS/cm. Reverse electrical current conducted through the deplating bath non-uniformly. electro-etches or deplates the metal film.

    Abstract translation: 不均匀的初始金属膜不均匀地脱落以在基底上提供更均匀的金属膜。 电化学脱色可以通过将基底放置在专门用于脱皮而不是用于电镀的脱镀浴中来进行。 脱镀浴的投掷功率可以为0.3以下; 或浴电导率为1mS / cm至250mS / cm。 反向电流不均匀地通过浸镀浴导入。 电蚀或去掉金属膜。

    ELECTROPLATING PROCESSOR WITH WAFER HEATING OR COOLING
    5.
    发明申请
    ELECTROPLATING PROCESSOR WITH WAFER HEATING OR COOLING 审中-公开
    具有加热或冷却的电镀处理器

    公开(公告)号：US20140262804A1

    公开(公告)日：2014-09-18

    申请号：US13828463

    申请日：2013-03-14

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Sam K. Lee

    IPC: C25D21/02 ,  C25D7/12

    CPC classification number: C25D21/02 ,  C25D17/001 ,  C25D17/008

    Abstract: In electroplating a wafer, the front and/or back side of the wafer is heated or cooled during processing. The wafer may be in contact with a backing plate of an electroplating processor. The backing plate may be heated via electrical heaters, by radiant heaters, or via a heated liquid or gas. The backing plate may alternatively be cooled using electric coolers or cooled liquid or gas. The heated or cooled backing plate then heats or cools the back side of the wafer largely via conduction.

    Abstract translation: 在电镀电晶片时，晶片的正面和/或背面在加工过程中被加热或冷却。 晶片可以与电镀处理器的背板接触。 背板可以通过电加热器，辐射加热器或经加热的液体或气体加热。 可以使用电冷却器或冷却的液体或气体来替代背板。 加热或冷却的背板然后通过导电加热或冷却晶片的背面。

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