公开(公告)号：US20230272547A1

公开(公告)日：2023-08-31

申请号：US18304200

申请日：2023-04-20

Applicant: Applied Materials, Inc.

Inventor： Jing Xu ,  John L. Klocke ,  Marvin L. Bernt ,  Eric J. Bergman ,  Kwan Wook Roh

IPC: C25D3/38 ,  C25D5/54 ,  C25D5/02 ,  H01L21/288 ,  C23C14/18 ,  H01L21/28 ,  H01L21/768 ,  C23C16/455

CPC classification number: C25D3/38 ,  C25D5/54 ,  C25D5/02 ,  H01L21/2885 ,  C23C14/18 ,  H01L21/28114 ,  H01L21/76873 ,  C23C16/45525

Abstract: Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.

公开(公告)号：US11634830B2

公开(公告)日：2023-04-25

申请号：US17411305

申请日：2021-08-25

Applicant: Applied Materials, Inc.

Inventor： Jing Xu ,  John L. Klocke ,  Marvin L. Bernt ,  Eric J. Bergman ,  Kwan Wook Roh

IPC: C25D3/38 ,  C25D5/02 ,  C25D5/54 ,  H01L21/288 ,  C23C14/18 ,  H01L21/28 ,  H01L21/768 ,  C23C16/455

Abstract: Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.

公开(公告)号：US20240254645A1

公开(公告)日：2024-08-01

申请号：US18160912

申请日：2023-01-27

Applicant: APPLIED Materials, Inc.

Inventor： Jing Xu ,  John Klocke

IPC: C25D3/38 ,  C25D5/02 ,  C25D5/10 ,  C25D5/34 ,  C25D7/12 ,  H01L21/02 ,  H01L21/768

CPC classification number: C25D3/38 ,  C25D5/02 ,  C25D5/10 ,  C25D5/34 ,  C25D7/12 ,  H01L21/02002 ,  H01L21/76879

Abstract: A semiconductor wafer, including a substrate, at least one via formed in the substrate, and copper electroplating inside the at least one via, where the copper electroplating comprises a first layer of nanotwin copper, and a second layer of bulk copper. Further, a method of making a semiconductor wafer, the method comprising providing a substrate; etching the substrate to form at least one via; and depositing copper electroplating inside the at least one via, wherein the copper electroplating comprises a first layer of nanotwin copper, and a second layer of bulk copper.

公开(公告)号：US20250051951A1

公开(公告)日：2025-02-13

申请号：US18929416

申请日：2024-10-28

Applicant: Applied Materials, Inc.

Inventor： Paul R. McHugh ,  Charles Sharbono ,  Jing Xu ,  John L. Klocke ,  Sam K. Lee ,  Keith Edward Ypma

IPC: C25D5/18 ,  C25D5/02 ,  C25D7/12 ,  C25D17/00 ,  C25D21/12 ,  G06F30/20 ,  H01L21/768

Abstract: A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate characteristics of the plating process and a pattern on the substrate to a range nonuniformity of material formed on the substrate during the plating process. Using information from the data points, values for the forward and reverse currents may be derived and provided to the plating chamber to execute the plating process.

公开(公告)号：US20240413011A1

公开(公告)日：2024-12-12

申请号：US18332964

申请日：2023-06-12

Applicant: Applied Materials, Inc.

Inventor： Jing Xu ,  John L. Klocke ,  Paul R. McHugh ,  Marvin L. Bernt

IPC: H01L21/768 ,  H01L21/288 ,  H01L21/66

Abstract: A method of plating substrates may include receiving characteristics of a plating chamber and characteristics of a substrate to be placed in the plating chamber to be provided as inputs to a trained model. An inference operation using the trained model may be performed to generate a recipe for the plating chamber. The recipe may include characteristics of a forward plating current and characteristics of a reverse de-plating current that may be applied in order to add and remove metal to maintain co-planarity and pillar quality. The plating operation may be performed on the substrate using the recipe that was output from the trained model to cause a current to be applied to the plating liquid in the plating chamber to deposit a metal on exposed portions of the substrate, wherein the current comprises alternating cycles of the forward plating current; and the reverse de-plating current.

公开(公告)号：US12146235B2

公开(公告)日：2024-11-19

申请号：US17686129

申请日：2022-03-03

Applicant: Applied Materials, Inc.

Inventor： Paul R. McHugh ,  Charles Sharbono ,  Jing Xu ,  John L. Klocke ,  Sam K. Lee ,  Keith Edward Ypma

IPC: C25D5/18 ,  C25D5/02 ,  C25D7/12 ,  C25D17/00 ,  C25D21/12 ,  G06F30/20 ,  H01L21/768

Abstract: A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate characteristics of the plating process and a pattern on the substrate to a range nonuniformity of material formed on the substrate during the plating process. Using information from the data points, values for the forward and reverse currents may be derived and provided to the plating chamber to execute the plating process.

公开(公告)号：US11973034B2

公开(公告)日：2024-04-30

申请号：US17411321

申请日：2021-08-25

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  John L. Klocke ,  Marvin L. Bernt ,  Jing Xu ,  Kwan Wook Roh

IPC: H01L23/532 ,  C25D3/38 ,  C25D5/48 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768

CPC classification number: H01L23/53238 ,  C25D3/38 ,  C25D5/48 ,  C25D7/12 ,  H01L21/2885 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/53252

Abstract: Exemplary methods of electroplating a metal with a nanotwin crystal structure are described. The methods may include plating a metal material into at least one opening on a patterned substrate, where at least a portion of the metal material is characterized by a nanotwin crystal structure. The methods may further include polishing an exposed surface of the metal material in the opening to reduce an average surface roughness of the exposed surface to less than or about 1 nm. The polished exposed surface may include at least a portion of the metal material characterized by the nanotwin crystal structure. In additional examples, the nanotwin-phased metal may be nanotwin-phased copper.

公开(公告)号：US20230279576A1

公开(公告)日：2023-09-07

申请号：US17686129

申请日：2022-03-03

Applicant: Applied Materials, Inc.

Inventor： Paul R. McHugh ,  Charles Sharbono ,  Jing Xu ,  John L. Klocke ,  Sam K. Lee ,  Keith Edward Ypma

IPC: C25D5/18 ,  H01L21/768 ,  C25D5/02 ,  C25D21/12 ,  G06F30/20

CPC classification number: C25D5/18 ,  H01L21/76898 ,  C25D5/022 ,  C25D21/12 ,  G06F30/20

Abstract: A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate characteristics of the plating process and a pattern on the substrate to a range nonuniformity of material formed on the substrate during the plating process. Using information from the data points, values for the forward and reverse currents may be derived and provided to the plating chamber to execute the plating process.

公开(公告)号：US20230068074A1

公开(公告)日：2023-03-02

申请号：US17411305

申请日：2021-08-25

Applicant: Applied Materials, Inc.

Inventor： Jing Xu ,  John L. Klocke ,  Marvin L. Bernt ,  Eric J. Bergman ,  Kwan Wook Roh

IPC: C25D3/38 ,  C25D5/54 ,  C25D5/02 ,  C23C16/455 ,  C23C14/18 ,  H01L21/28 ,  H01L21/768 ,  H01L21/288

Abstract: Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.

公开(公告)号：US20230065426A1

公开(公告)日：2023-03-02

申请号：US17411321

申请日：2021-08-25

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  John L. Klocke ,  Marvin L. Bernt ,  Jing Xu ,  Kwan Wook Roh

IPC: H01L23/532 ,  H01L21/288 ,  H01L21/768 ,  C25D7/12 ,  C25D5/48 ,  C25D3/38

Abstract: Exemplary methods of electroplating a metal with a nanotwin crystal structure are described. The methods may include plating a metal material into at least one opening on a patterned substrate, where at least a portion of the metal material is characterized by a nanotwin crystal structure. The methods may further include polishing an exposed surface of the metal material in the opening to reduce an average surface roughness of the exposed surface to less than or about 1 nm. The polished exposed surface may include at least a portion of the metal material characterized by the nanotwin crystal structure. In additional examples, the nanotwin-phased metal may be nanotwin-phased copper.