公开(公告)号：US07229935B2

公开(公告)日：2007-06-12

申请号：US10932816

申请日：2004-09-02

申请人： Atsuki Fukazawa ,  Kenichi Kagami ,  Manabu Kato

发明人： Atsuki Fukazawa ,  Kenichi Kagami ,  Manabu Kato

IPC分类号： H01L21/471 ,  C23C16/22

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633

摘要： A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film on the substrate by plasma CVD under a given pressure with a given intensity of radio-frequency (RF) power from a first point in time to a second point in time; at the second point in time, stopping the supply of the silicon-containing source gas; and at the second point in time, beginning reducing but not stopping the RF power, and beginning reducing the pressure, wherein the reduction of the RF power and the reduction of the pressure are synchronized up to a third point in time.

摘要翻译： 形成薄膜的方法包括：将添加气体，稀释气体和含硅源气体供给到其中放置基板的反应室中; 通过等离子体CVD在给定的压力下以从第一时间点到第二时间点的给定强度的射频（RF）功率在衬底上形成薄膜; 在第二时间点停止含硅源气体的供给; 并且在第二时间点，开始减少但不停止RF功率，并开始降低压力，其中RF功率的降低和压力的降低被同步到第三时间点。

公开(公告)号：US20050048797A1

公开(公告)日：2005-03-03

申请号：US10932816

申请日：2004-09-02

申请人： Atsuki Fukazawa ,  Kenichi Kagami ,  Manabu Kato

发明人： Atsuki Fukazawa ,  Kenichi Kagami ,  Manabu Kato

IPC分类号： C23C16/42 ,  C23C16/40 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01L21/31 ,  H01L21/316 ,  H05H1/24 ,  H01L21/469

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633

摘要： A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film on the substrate by plasma CVD under a given pressure with a given intensity of radio-frequency (RF) power from a first point in time to a second point in time; at the second point in time, stopping the supply of the silicon-containing source gas; and at the second point in time, beginning reducing but not stopping the RF power, and beginning reducing the pressure, wherein the reduction of the RF power and the reduction of the pressure are synchronized up to a third point in time.

摘要翻译： 形成薄膜的方法包括：将添加气体，稀释气体和含硅源气体供给到其中放置基板的反应室中; 通过等离子体CVD在给定的压力下以从第一时间点到第二时间点的给定强度的射频（RF）功率在衬底上形成薄膜; 在第二时间点停止含硅源气体的供给; 并且在第二时间点，开始减少但不停止RF功率，并开始降低压力，其中RF功率的降低和压力的降低被同步到第三时间点。

公开(公告)号：US07582575B2

公开(公告)日：2009-09-01

申请号：US11294319

申请日：2005-12-05

申请人： Atsuki Fukazawa ,  Kenichi Kagami

发明人： Atsuki Fukazawa ,  Kenichi Kagami

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/4485 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3122 ,  H01L21/31633 ,  H01L2924/12044

摘要： A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, C, O, and H on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

摘要翻译： 通过等离子体反应在半导体衬底上形成绝缘膜的方法包括：蒸发具有Si-O键化合物的含硅烃以提供源气体; 将源气体和没有氧化气体的载气引入用于等离子体CVD处理的反应空间中; 以及通过在反应空间中使用低频RF功率和高频RF功率的组合的等离子体反应在衬底上形成由Si，C，O和H构成的绝缘膜。 激活等离子体反应，同时控制反应气体的流动以延长反应空间中的反应气体的停留时间Rt。

公开(公告)号：US20060110931A1

公开(公告)日：2006-05-25

申请号：US11294319

申请日：2005-12-05

申请人： Atsuki Fukazawa ,  Kenichi Kagami

发明人： Atsuki Fukazawa ,  Kenichi Kagami

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/4485 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3122 ,  H01L21/31633 ,  H01L2924/12044

摘要： A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, C, O, and H on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.

公开(公告)号：US07501292B2

公开(公告)日：2009-03-10

申请号：US11780021

申请日：2007-07-19

申请人： Kiyohiro Matsushita ,  Kenichi Kagami

发明人： Kiyohiro Matsushita ,  Kenichi Kagami

IPC分类号： H01L21/66

CPC分类号： H01L21/67253 ,  H01L21/67115

摘要： A method for managing UV irradiation for curing a semiconductor substrate, includes: passing UV light through a transmission glass window provided in a chamber for curing a semiconductor substrate placed in the chamber; monitoring an illuminance upstream of the transmission glass window and an illuminance downstream of the transmission glass window; determining a timing and/or duration of cleaning of the transmission glass window, a timing of replacing the transmission glass window, a timing of replacing a UV lamp, and/or an output of the UV light based on the monitored illuminances.

摘要翻译： 一种用于管理用于固化半导体衬底的UV照射的方法，包括：使UV光通过设置在室中的透射玻璃窗，用于固化放置在所述室中的半导体衬底; 监测透射玻璃窗上游的照度和透射玻璃窗下游的照度; 确定透射玻璃窗的清洁的时间和/或持续时间，更换透​​射玻璃窗的时间，更换UV灯的时间和/或基于所监视的照度的UV光的输出。

公开(公告)号：US06767836B2

公开(公告)日：2004-07-27

申请号：US10235217

申请日：2002-09-04

申请人： Nelson Loke Chou San ,  Kenichi Kagami ,  Kiyoshi Satoh

发明人： Nelson Loke Chou San ,  Kenichi Kagami ,  Kiyoshi Satoh

IPC分类号： H01L21302

CPC分类号： H01L21/02126 ,  C23C16/4405 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/314 ,  H01L21/31633 ,  Y10S438/905

摘要： Provided herein is a method for cleaning CVD reaction chambers with active oxygen species. The active oxygen species may also be mixed with active fluorine species. The active oxygen species are products of a plasma, which may be either generated within the CVD reaction chamber or generated remotely and introduced into the CVD reaction chamber.

摘要翻译： 本文提供了一种用于清洁具有活性氧的CVD反应室的方法。 活性氧也可与活性氟物质混合。 活性氧是等离子体的产物，其可以在CVD反应室内产生或远程产生并引入CVD反应室。

公开(公告)号：US20080066778A1

公开(公告)日：2008-03-20

申请号：US11857639

申请日：2007-09-19

申请人： Kiyohiro Matsushita ,  Hideaki Fukuda ,  Kenichi Kagami

发明人： Kiyohiro Matsushita ,  Hideaki Fukuda ,  Kenichi Kagami

IPC分类号： B08B7/00

CPC分类号： C23C16/482 ,  B08B7/0057 ,  C23C16/4405 ,  C23C16/452 ,  Y10S134/902

摘要： A method of cleaning a UV irradiation chamber includes steps of: (i) after completion of irradiating a substrate with UV light transmitted through an optical transmitted window provided in the UV irradiation chamber, generating radical species of a cleaning gas outside the UV irradiation chamber; and (ii) introducing the radical species from the outside of the UV irradiation chamber into the UV irradiation chamber, thereby cleaning the optical transmitted window.

摘要翻译： 一种紫外线照射室的清洗方法，其特征在于，包括以下步骤：（i）在通过设置在所述紫外线照射室中的透光窗透过的UV光照射基板后，在所述UV照射室外产生清洗气体的自由基， 和（ii）将自由基物质从UV照射室的外部引入UV照射室，从而清洁光学透射窗口。

公开(公告)号：US07789965B2

公开(公告)日：2010-09-07

申请号：US11857639

申请日：2007-09-19

申请人： Kiyohiro Matsushita ,  Hideaki Fukuda ,  Kenichi Kagami

发明人： Kiyohiro Matsushita ,  Hideaki Fukuda ,  Kenichi Kagami

IPC分类号： B08B7/04

CPC分类号： C23C16/482 ,  B08B7/0057 ,  C23C16/4405 ,  C23C16/452 ,  Y10S134/902

摘要： A method of cleaning a UV irradiation chamber includes steps of: (i) after completion of irradiating a substrate with UV light transmitted through an optical transmitted window provided in the UV irradiation chamber, generating radical species of a cleaning gas outside the UV irradiation chamber; and (ii) introducing the radical species from the outside of the UV irradiation chamber into the UV irradiation chamber, thereby cleaning the optical transmitted window.

摘要翻译： 一种紫外线照射室的清洗方法，其特征在于，包括以下步骤：（i）在通过设置在所述紫外线照射室中的透光窗透过的UV光照射基板后，在所述UV照射室外产生清洗气体的自由基， 和（ii）将自由基物质从UV照射室的外部引入UV照射室，从而清洁光学透射窗口。

公开(公告)号：US07763869B2

公开(公告)日：2010-07-27

申请号：US11690614

申请日：2007-03-23

申请人： Kiyohiro Matsushita ,  Kenichi Kagami

发明人： Kiyohiro Matsushita ,  Kenichi Kagami

IPC分类号： G21K5/02

CPC分类号： H01L21/67115 ,  H01L21/6715

摘要： A UV light irradiating apparatus for irradiating a semiconductor substrate with UV light includes: a reactor in which a substrate-supporting table is provided; a UV light irradiation unit connected to the reactor for irradiating a semiconductor substrate placed on the substrate-supporting table with UV light through a light transmission window; and a liquid layer forming channel disposed between the light transmission window and at least one UV lamp for forming a liquid layer through which the UV light is transmitted. The liquid layer is formed by a liquid flowing through the liquid layer forming channel.

摘要翻译： 用于用UV照射半导体衬底的UV光照射装置包括：设置有衬底支撑台的反应器; 紫外光照射单元，连接到所述反应器，用于通过光传输窗口用UV光照射放置在所述基板支撑台上的半导体基板; 以及液体层形成通道，其设置在所述透光窗和至少一个UV灯之间，用于形成透过所述UV光的液体层。 液体层由流过液体层形成通道的液体形成。

公开(公告)号：US20090093135A1

公开(公告)日：2009-04-09

申请号：US11867555

申请日：2007-10-04

申请人： Kiyohiro Matsushita ,  Kenichi Kagami

发明人： Kiyohiro Matsushita ,  Kenichi Kagami

IPC分类号： H01L21/263 ,  G21K5/00

CPC分类号： H01L21/67115 ,  H01L21/3105

摘要： Low dielectric constant materials are cured in a process chamber during semiconductor processing. The low dielectric constant materials are cured by irradiation with UV light. The atmosphere in the process chamber has an O2 concentration of about 25-10,000 ppm during the irradiation. The O2 limits the formation of —Si—H and —Si—OH groups in the low dielectric constant material, thereby reducing the occurrence of moisture absorption and oxidation in the low dielectric constant material.

摘要翻译： 低介电常数材料在半导体处理期间在处理室中固化。 低介电常数材料通过UV光照射固化。 处理室中的气氛在照射期间具有约25-10,000ppm的O 2浓度。 O2限制了低介电常数材料中-Si-H和-Si-OH基团的形成，从而减少了低介电常数材料中吸湿和氧化的发生。