公开(公告)号：US08336381B2

公开(公告)日：2012-12-25

申请号：US12516007

申请日：2007-11-29

申请人： Atsushi Kandori ,  Masao Majima ,  Kenichi Nagae ,  Yasuyoshi Takai

发明人： Atsushi Kandori ,  Masao Majima ,  Kenichi Nagae ,  Yasuyoshi Takai

IPC分类号： G01C19/00

CPC分类号： G01C19/5719 ,  G01P15/0802 ,  G01P15/124 ,  G01P15/125

摘要： A sensor includes a movably supported movable element and an opposing member, and sensor detects a relative positional relationship between the movable element and the opposing member which are provided with a spacing therebetween. The opposing member has an impurity-doped portion which is provided at either an opposing portion, which is opposed to the movable element, or an adjoining portion, which adjoins the opposing portion. At least a part of the impurity-doped portion is formed on an opposite surface (that is, opposite to a surface that faces the movable element), from which opposite surface an electrical wiring is led out.

摘要翻译： 传感器包括可移动支撑的可移动元件和相对构件，并且传感器检测可移动元件和相对构件之间的间隔的相对位置关系。 相对的构件具有杂质掺杂部分，其被设置在与可移动元件相对的相对部分或邻接相对部分的相邻部分。 杂质掺杂部分的至少一部分形成在与其相反的表面上（即，面向可移动元件的表面的相对表面），电线从该表面引出。

公开(公告)号：US20100043546A1

公开(公告)日：2010-02-25

申请号：US12516007

申请日：2007-11-29

申请人： Atsushi Kandori ,  Masao Majima ,  Kenichi Nagae ,  Yasuyoshi Takai

发明人： Atsushi Kandori ,  Masao Majima ,  Kenichi Nagae ,  Yasuyoshi Takai

IPC分类号： G01C19/56 ,  H01L21/30

CPC分类号： G01C19/5719 ,  G01P15/0802 ,  G01P15/124 ,  G01P15/125

摘要： Provided is a sensor including a movably supported movable element and an opposing member. The sensor detects a relative positional relationship between the movable element and the opposing member which are provided with a spacing therebetween The opposing member has an impurity-doped portion which is provided to one of an opposing portion which is opposed to the movable element and an adjoining portion which adjoins the opposing portion. At least a part of the impurity-doped portion is formed on an opposite surface opposite to a surface which is opposed to the movable element, from which opposite surface an electrical wiring is led out.

摘要翻译： 提供一种传感器，包括可移动支撑的可移动元件和相对构件。 传感器检测可移动元件和相对构件之间的间隔的相对位置关系。相对构件具有杂质掺杂部分，该杂质掺杂部分设置在与可移动元件相对的相对部分中的一个上， 邻接相对部分的部分。 杂质掺杂部分的至少一部分形成在与可移动元件相对的表面相对的相对表面上，从该导体的相对表面引出电线。

公开(公告)号：US20110098568A1

公开(公告)日：2011-04-28

申请号：US12937535

申请日：2009-04-03

申请人： Yasuhiro Someda ,  Kenichi Nagae ,  Katsuya Oikawa ,  Keishi Saito ,  Yasuyoshi Takai ,  Hirofumi Taki ,  Toru Sato

发明人： Yasuhiro Someda ,  Kenichi Nagae ,  Katsuya Oikawa ,  Keishi Saito ,  Yasuyoshi Takai ,  Hirofumi Taki ,  Toru Sato

IPC分类号： A61B8/14

CPC分类号： G01S7/52049 ,  G01S15/8952

摘要： An ultrasound image forming method comprises a first step of receiving a first signal reflected from the object, a second step of obtaining an aberration correction value based on the first signal thus received, a third step of receiving a second signal reflected from the object when a second ultrasound corrected based on the aberration correction value is transmitted to the object, and a fourth step of forming an image from the aberration correction value and the second signal. The center frequency of the second ultrasound is between 0.5 MHz and 20 MHz, the center frequency of the first ultrasound is between 3/16 and 9/20 of the center frequency of the second ultrasound. By this method, an accurate aberration correction value can be obtained and an ultrasound imaging with high resolution can be achieved even if aberrations are large and difficult to correct.

摘要翻译： 超声波图像形成方法包括：接收从对象反射的第一信号的第一步骤，基于如此接收的第一信号获得像差校正值的第二步骤;接收从物体反射的第二信号的第三步骤，当第 基于像差校正值校正的第二超声波被发送到物体，以及第四步骤，根据像差校正值和第二信号形成图像。 第二超声的中心频率在0.5MHz和20MHz之间，第一超声的中心频率在第二超声的中心频率的3/16和9/20之间。 通过该方法，可以获得精确的像差校正值，即使像差大，难以校正也能够实现高分辨率的超声波成像。

公开(公告)号：US09689974B2

公开(公告)日：2017-06-27

申请号：US12937535

申请日：2009-04-03

申请人： Yasuhiro Someda ,  Kenichi Nagae ,  Katsuya Oikawa ,  Keishi Saito ,  Yasuyoshi Takai ,  Hirofumi Taki ,  Toru Sato

发明人： Yasuhiro Someda ,  Kenichi Nagae ,  Katsuya Oikawa ,  Keishi Saito ,  Yasuyoshi Takai ,  Hirofumi Taki ,  Toru Sato

IPC分类号： A61B8/14 ,  G01S7/52 ,  G01S15/89

CPC分类号： G01S7/52049 ,  G01S15/8952

摘要： An ultrasound image forming method comprises a first step of receiving a first signal reflected from the object, a second step of obtaining an aberration correction value based on the first signal thus received, a third step of receiving a second signal reflected from the object when a second ultrasound corrected based on the aberration correction value is transmitted to the object, and a fourth step of forming an image from the aberration correction value and the second signal. The center frequency of the second ultrasound is between 0.5 MHz and 20 MHz, the center frequency of the first ultrasound is between 3/16 and 9/20 of the center frequency of the second ultrasound. By this method, an accurate aberration correction value can be obtained and an ultrasound imaging with high resolution can be achieved even if aberrations are large and difficult to correct.

公开(公告)号：US09166502B2

公开(公告)日：2015-10-20

申请号：US13587751

申请日：2012-08-16

申请人： Yoshihiro Hasegawa ,  Yasuyoshi Takai

发明人： Yoshihiro Hasegawa ,  Yasuyoshi Takai

IPC分类号： H04R31/00 ,  H02N1/00 ,  H01G5/16

CPC分类号： B06B1/0292 ,  H01G5/16 ,  H02N1/006 ,  Y10T29/43

摘要： The present invention provides a technology for decreasing a dispersion of the performance among electromechanical transducers each having through wiring. A method for manufacturing an electromechanical transducer includes: obtaining a structure in which an insulative portion having a through hole therein is bonded onto an electroconductive substrate; filling the through hole with an electroconductive material to form a through wiring which is electrically connected with the electroconductive substrate; and using the electroconductive substrate as a first electrode, forming a plurality of vibrating membrane portions including a second electrode, which opposes to the first electrode through a plurality of gaps, on an opposite side of the first electrode to the side having the insulative portion, to thereby forming a plurality of cells.

摘要翻译： 本发明提供了一种用于减小每个具有通过布线的机电换能器之间的性能分散的技术。 制造机电换能器的方法包括：获得其中具有通孔的绝缘部分结合到导电基底上的结构; 用导电材料填充通孔以形成与导电基板电连接的贯通布线; 并且使用所述导电性基板作为第一电极，在所述第一电极的与所述绝缘部的一侧相反的一侧形成多个振动膜部，所述多个振动膜部包括与所述第一电极相对的多个间隙的第二电极， 从而形成多个单元。

公开(公告)号：US20110092016A1

公开(公告)日：2011-04-21

申请号：US12865032

申请日：2009-03-02

申请人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

发明人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

IPC分类号： H01L21/26 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

摘要翻译： 在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。 半导体中间隙状态的面密度为1013cm-2eV-1或更小。 带隙可以是2eV或更大。 半导体可以包括选自In，Ga，Zn和Sn中的至少一种。 半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。 光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

公开(公告)号：US07501305B2

公开(公告)日：2009-03-10

申请号：US11874352

申请日：2007-10-18

申请人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

发明人： Yasuyoshi Takai ,  Hiroshi Shimoda ,  Shotaro Okabe ,  Koichi Matsuda ,  Hidetoshi Tsuzuki

IPC分类号： H01L21/20

CPC分类号： H01L21/67253 ,  C23C16/24 ,  C23C16/545 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD under conditions such that when a deposited film having a thickness of 300 nm or more is formed on a substrate while the substrate is in a stationary state, an area of the microcrystalline silicon region in which an intensity of Raman scattering attributed to a crystalline substance in the deposited film is equal to or higher than three times an intensity of Raman scattering attributed to an amorphous is 50% or more of the total area based on the area of the microcrystalline silicon region and the area of a region composed of the amorphous.

摘要翻译： 通过等离子体增强CVD在移动基板上形成含有微晶硅的沉积膜的方法包括通过等离子体增强CVD在移动的衬底上形成含有微晶硅的沉积膜，使得当厚度为300nm的沉积膜 以上，在基板处于静止状态的同时，在基板上形成有由析出膜中的结晶物质引起的拉曼散射强度的微晶硅区域的面积等于或高于 归因于非晶体的拉曼散射基于微晶硅区域的面积和由无定形构成的区域的面积为总面积的50％以上。

公开(公告)号：US07211708B2

公开(公告)日：2007-05-01

申请号：US09822191

申请日：2001-04-02

申请人： Takeshi Shishido ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Yasuyoshi Takai ,  Tadashi Hori ,  Koichiro Moriyama ,  Hidetoshi Tsuzuki ,  Hiroyuki Ozaki

发明人： Takeshi Shishido ,  Shotaro Okabe ,  Masahiro Kanai ,  Yuzo Koda ,  Yasuyoshi Takai ,  Tadashi Hori ,  Koichiro Moriyama ,  Hidetoshi Tsuzuki ,  Hiroyuki Ozaki

IPC分类号： A62D3/00 ,  B08B15/00 ,  B08B5/00 ,  H05H1/03 ,  H05H1/16 ,  H05H1/48

CPC分类号： H01J37/32844 ,  C23C14/564 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/605

摘要： A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

摘要翻译： 化学反应诱发装置设置在连接用于对衬底或膜进行等离子体处理的处理空间到排气装置的排气管线中，并且至少从处理空间排出的未反应气体或副产物发生化学反应 不允许处理空间中的等离子体到达化学反应诱导装置，从而提高化学反应诱导装置处理未反应气体或副产物的处理能力。

公开(公告)号：US06930025B2

公开(公告)日：2005-08-16

申请号：US10059168

申请日：2002-01-31

申请人： Akiya Nakayama ,  Hiroshi Echizen ,  Yasuyoshi Takai ,  Naoto Okada ,  Shigeo Kiso

发明人： Akiya Nakayama ,  Hiroshi Echizen ,  Yasuyoshi Takai ,  Naoto Okada ,  Shigeo Kiso

IPC分类号： C23C14/02 ,  H01L31/0224 ,  H01L31/052 ,  H01L31/18 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L31/1884 ,  C23C14/024 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/056 ,  Y02E10/52

摘要： In a process for forming on a substrate a transparent conductive film having crystallizability, the process comprises a first step of forming a film at a first film formation rate and a second step of forming a film at a second film formation rate, and the relationship between film formation rates in the respective steps satisfies: 2≦(second film formation rate)/(first film formation rate)≦100; which provides a process for producing a transparent conductive film by a deposition process advantageous for cost reduction, which can form in a short time a transparent conductive film having an uneven surface profile with a high light-confining effect, and can bring about an improvement in photovoltaic performance and enjoy a high mass productivity when applied to the formation of multi-layer structure of photovoltaic devices.

摘要翻译： 在基板上形成具有结晶性的透明导电膜的方法中，该方法包括以第一成膜速度形成薄膜的第一步骤和以第二薄膜形成速率形成薄膜的第二步骤 各步骤中的成膜速度满足：<？in-line-formula description =“In-line formula”end =“lead”？> 2 <=（第二成膜速率）/（第一成膜速率）<= 100 ; <？in-line-formula description =“In-line Formulas”end =“tail”？>，其提供了一种通过有利于成本降低的沉积工艺制造透明导电膜的方法，其可以在短时间内形成 透明导电膜具有不均匀的表面轮廓，具有高的光限制效应，并且当应用于形成光伏器件的多层结构时，可以实现光伏性能的提高并且获得高的批量生产率。

公开(公告)号：US06860974B2

公开(公告)日：2005-03-01

申请号：US10183339

申请日：2002-06-28

申请人： Hiroshi Echizen ,  Yasuyoshi Takai ,  Akiya Nakayama

发明人： Hiroshi Echizen ,  Yasuyoshi Takai ,  Akiya Nakayama

IPC分类号： C23C14/34 ,  C23C14/00 ,  C23C14/56 ,  H01L31/0224 ,  H01L31/04 ,  C23C14/32

CPC分类号： H01L31/022466 ,  C23C14/0042 ,  C23C14/0073 ,  C23C14/568 ,  H01L31/022483

摘要： There are provided techniques of forming a back reflecting layer with constant characteristics throughout long-term film formation and forming a metal oxide film so as to be able to maintain a current of a bottom cell and thereby keep a short-circuit current Jsc of a solar cell constant over a long period of time. A sputtering method is a method of forming a stack of a metal film and a metal oxide film, comprising the step 1 of forming a metal layer on a substrate, the step 2 of bringing a surface of the metal layer into contact with active oxygen, and the step 3 of forming a metal oxide film thereon after the step 2, wherein in the step 2 an amount of active oxygen at a first substrate position is different from that at a second substrate position.

摘要翻译： 提供了在长期成膜和形成金属氧化物膜时形成具有恒定特性的背反射层以便能够保持底电池的电流并由此保持太阳能的短路电流Jsc的技术 细胞常数长时间。 溅射法是形成金属膜和金属氧化物膜的堆叠的方法，其包括在基板上形成金属层的工序1，使金属层的表面与活性氧接触的工序2， 以及步骤2之后在其上形成金属氧化物膜的步骤3，其中在步骤2中，第一基板位置处的活性氧量与第二基板位置处的活性氧量不同。