公开(公告)号：US09742951B2

公开(公告)日：2017-08-22

申请号：US14527988

申请日：2014-10-30

申请人： Atsushi Sugai ,  Tsuyoshi Fujimoto

发明人： Atsushi Sugai ,  Tsuyoshi Fujimoto

IPC分类号： G02B9/04 ,  H04N1/028 ,  G02B7/02

CPC分类号： H04N1/028 ,  G02B7/021 ,  G02B7/025 ,  G02B7/028 ,  H04N2201/0081 ,  H04N2201/0094 ,  H04N2201/02431 ,  H04N2201/02458

摘要： A lens unit includes a tube lens; a single lens arranged at a downstream side with respect to the tube lens in an optical incidence direction; and a supporting member that supports the tube lens and the single lens. Reflection light from a document is condensed on an image sensor by the tube lens and the single lens to form an image. An end surface part, not facing the tube lens, of the single lens is in direct contact with the supporting member.

公开(公告)号：US20130135859A1

公开(公告)日：2013-05-30

申请号：US13678936

申请日：2012-11-16

申请人： Tokiko INOUE ,  Mitsuru Nakajima ,  Tsuyoshi Fujimoto ,  Akihiro Iwamatsu ,  Chihiro Tanaka

发明人： Tokiko INOUE ,  Mitsuru Nakajima ,  Tsuyoshi Fujimoto ,  Akihiro Iwamatsu ,  Chihiro Tanaka

IPC分类号： F21V8/00

CPC分类号： G02B6/0011 ,  G03G15/04054 ,  H04N1/02481 ,  H04N1/02855 ,  H04N1/02865 ,  H04N2201/02435

摘要： A light irradiator including multiple point light sources arranged in a straight line, a light-transmissive light guiding member provided in front of the point light sources in an emission direction of beams of light emitted from the point light sources, the light guiding member guiding the beams of light in a predetermined direction toward a surface to be irradiated; and two or more protrusions protruding toward the point light sources, provided on a light entering surface of the light guiding member and arranged in the same direction as the point light sources. The light guiding member and the point light sources are positioned such that a distance between the protrusions provided to the light guiding member and irradiation surfaces of the point light sources is equal at two positions.

摘要翻译： 一种包括以直线排列的多点光源的光照射器，沿点光源发射的光束的发射方向设置在点光源前面的透光导光部件，导光部件引导 沿预定方向的光束朝向待照射的表面; 以及设置在导光部件的光入射面上且与点光源相同的方向配置的朝向点光源突出的两个以上的突起。 导光构件和点光源被定位成使得提供给导光构件的突起和点光源的照射表面之间的距离在两个位置处相等。

公开(公告)号：US20110211608A1

公开(公告)日：2011-09-01

申请号：US12998518

申请日：2008-10-31

申请人： Tsuyoshi Fujimoto ,  Yumi Yamada ,  Yuji Yamagata ,  Tsuyoshi Saitoh ,  Manabu Katahira

发明人： Tsuyoshi Fujimoto ,  Yumi Yamada ,  Yuji Yamagata ,  Tsuyoshi Saitoh ,  Manabu Katahira

IPC分类号： H01S5/34

CPC分类号： H01S5/20 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3213 ,  H01S2301/18

摘要： A semiconductor laser element includes an active layer, an n-type carrier blocking layer arranged so as to be adjacent to the active layer and having a bandgap width that is equal to or greater than those of barrier layers, an n-type waveguide layer arranged on a side opposite to a side of the n-type carrier-blocking layer on which the active layer is arranged, so as to be adjacent to the n-type carrier blocking layer, an n-type clad layer arranged on a side opposite to a side of the n-type waveguide layer on which the active layer is arranged, so as to be adjacent to the n-type waveguide layer, and having a bandgap width that is greater than that of the n-type waveguide layer, and a p-type clad layer arranged on a side opposite to a side of the active layer on which the n-type carrier blocking layer is arranged, so as to be adjacent to the active layer, and having a bandgap width that is greater than those of the barrier layers and the n-type waveguide layer.

摘要翻译： 半导体激光器元件包括有源层，n型载流子阻挡层，被布置成与有源层相邻并且具有等于或大于阻挡层的带隙宽度的带隙宽度; n型波导层布置 在与其上配置有源层的n型载流子阻挡层的一侧相对的一侧，与n型载流子阻挡层相邻，配置在与n型载流子阻挡层相对的一侧上的n型覆盖层 n型波导层的配置有活性层的一侧，与n型波导层相邻，并且具有比n型波导层的带隙宽度大的带隙宽度， p型覆盖层布置在与有源层的配置有n型载流子阻挡层的一侧相对的一侧上，以与活性层相邻，并且具有大于 阻挡层和n型波导层。

公开(公告)号：US06995406B2

公开(公告)日：2006-02-07

申请号：US10486050

申请日：2003-06-06

申请人： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

发明人： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

IPC分类号： H01L33/00

CPC分类号： B82Y20/00 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/4031

摘要： In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

摘要翻译： 在包括层叠在蓝宝石或其他材料的基板的一个表面上的氮化物III-V化合物半导体层以形成激光结构的多光束半导体激光器中，并且包括形成在氮化物III上的多个阳极电极和多个阴极电极 -V化合物半导体层，其中一个阳极形成为通过绝缘膜桥接在一个阴极电极上，并且另一个阳极电极形成为通过绝缘膜桥接在另一个阴极电极上。

公开(公告)号：US06822990B2

公开(公告)日：2004-11-23

申请号：US10129550

申请日：2002-05-08

申请人： Takeshi Koiso ,  Tsuyoshi Fujimoto

发明人： Takeshi Koiso ,  Tsuyoshi Fujimoto

IPC分类号： H01S500

CPC分类号： H01S5/16 ,  B82Y20/00 ,  H01S5/164 ,  H01S5/168 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/34313 ,  H01S2304/04

摘要： A semiconductor laser device comprises first current blocking layers formed to define a stripe-shaped current injected region extending in the direction in a front facet from which a laser light is emitted and a rear facet opposing thereto are connected, and a second current blocking layer formed to transverse the stripe-shaped current injected region in the vicinity of the front facet. The first current blocking layers and the second current blocking layer are made of the same layer. Accordingly, a current blocking structure is provided in the vicinity of the facet with the structure which is easily formed, causes no damage on the semiconductor laser device, and minimizes the property degradation, thereby a high facet COD level and high reliability in long-term continuous operations can be achieved.

摘要翻译： 一种半导体激光器件包括：第一电流阻挡层，其形成为限定沿着前面的方向延伸的条状电流注入区域，激光从该方向发射，并且与之相对的后端面连接，形成第二电流阻挡层 横向前端附近的条纹电流注入区域。 第一电流阻挡层和第二电流阻挡层由相同的层制成。因此，在小面附近提供电流阻挡结构，其结构易于形成，不会对半导体激光器件造成损坏，并且 降低性能下降，从而可以实现高端的COD水平和长期连续操作的高可靠性。

公开(公告)号：US06285699B1

公开(公告)日：2001-09-04

申请号：US09163395

申请日：1998-09-30

申请人： Yumi Naito ,  Satoru Okada ,  Tsuyoshi Fujimoto

发明人： Yumi Naito ,  Satoru Okada ,  Tsuyoshi Fujimoto

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/12 ,  H01S5/2231 ,  H01S5/3432

摘要： On an n-GaAs substrate are sequentially formed an n-GaAs buffer layer, an n-AlGaAs cladding layer, a non-doped InGaAs active layer, a p-AlxGa1−xAs cladding layer, a p-GaAs contact layer, and further an n-AlGaAs current blocking layer having a stripe-like window is embedded in the cladding layer. At the active layer side interface of the current blocking layer, a diffraction grating of cyclic bumps and dips shape is formed, but the diffraction grating is not formed in a region of the stripe-like window where the current blocking layer is not present, i.e., a current injection region. In this way, a semiconductor laser device of low oscillation threshold, high oscillation efficiency, high reliability, long life time, and stabilized oscillation wavelength can be realized.

摘要翻译： 在n-GaAs衬底上依次形成n-GaAs缓冲层，n-AlGaAs覆层，非掺杂InGaAs有源层，p-Al x Ga 1-x As包层，p-GaAs接触层， 具有条状窗口的n-AlGaAs电流阻挡层嵌入包层中。 在电流阻挡层的有源层侧界面，形成了循环凸起和凹陷形状的衍射光栅，但是衍射光栅不形成在不存在电流阻挡层的条状窗口的区域中，即 ，电流注入区域。 以这种方式，可以实现低振荡阈值，高振荡效率，高可靠性，长寿命和稳定的振荡波长的半导体激光器件。

公开(公告)号：US5764668A

公开(公告)日：1998-06-09

申请号：US363834

申请日：1994-12-27

申请人： Shoji Ishizaka ,  Kiyofumi Muro ,  Tsuyoshi Fujimoto ,  Yoshikazu Yamada

发明人： Shoji Ishizaka ,  Kiyofumi Muro ,  Tsuyoshi Fujimoto ,  Yoshikazu Yamada

IPC分类号： H01S5/20 ,  H01S5/32 ,  H01S5/34 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S2301/18 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3409

摘要： To overcome the dilemma on device design in control of waveguide mode experienced in the conventional weak wave-guide-laser and SCH structure laser, realize higher output and lower dispersion of radiation beam, and improve the waveguide mode, on both sides of an active layer, carrier blocking layers for reducing the waveguide function of the active layer are provided, and waveguide layers are provided on both outer sides of the carrier blocking layers, and cladding layers are provided on both outer sides of the waveguide layers, the active layer is lamination of side barrier layers and a quantum well layer sandwiched therebetween, or side barrier layers, and a quantum well layer and a barrier layer sandwiched therebetween, the composition of the quantum well layer is Ga.sub.y In.sub.1-y As (0.6

摘要翻译： 为了克服传统弱波导激光和SCH结构激光器中经受的波导模式控制中的器件设计困境，实现了更高的输出和更低的辐射束色散，并改善了有源层两侧的波导模式 提供用于降低有源层的波导功能的载流子阻挡层，并且在载流子阻挡层的两个外侧设置波导层，并且在波导层的两个外侧设置包层，活性层为层叠 的侧面阻挡层和夹在其间的量子阱层或侧面阻挡层以及夹在其间的量子阱层和阻挡层，量子阱层的组成为GayIn1-yAs（0.6

公开(公告)号：US09363405B2

公开(公告)日：2016-06-07

申请号：US14193216

申请日：2014-02-28

申请人： Akihiro Iwamatsu ,  Tsuyoshi Fujimoto

发明人： Akihiro Iwamatsu ,  Tsuyoshi Fujimoto

IPC分类号： H04N1/028

CPC分类号： H04N1/02825 ,  H04N1/0284

摘要： A light irradiation system for irradiating light to an irradiation area extending in a main scanning direction of a document face when placed on an image scanning apparatus includes a light source; a light guiding member to guide light emitted from the light source; and a reflector to reflect a part of light exiting from the light guiding member to the document face. The irradiation area is irradiated by the reflection light reflected by the reflector and a direct light exiting from the light guiding member without reflection at the reflector. The light guiding member includes an incidence surface where the light from the light source enters; and an exit surface where the light entered from the incidence surface exits. The reflector is disposed at a position in a direction that light intensity of light emitting from the light source becomes the strongest.

摘要翻译： 当放置在图像扫描装置上时，用于将光照射到在文件面的主扫描方向上延伸的照射区域的光照射系统包括光源; 导光构件，用于引导从光源发射的光; 以及反射器，用于将从导光构件出射的一部分光反射到文件面。 照射区域由反射器反射的反射光和从反射器反射而从导光部件射出的直接光照射。 导光构件包括来自光源的光入射的入射表面; 以及从入射面入射的光离开的出射面。 反射器设置在从光源发出的光的光强度变得最强的方向的位置。

公开(公告)号：US08780416B2

公开(公告)日：2014-07-15

申请号：US13678936

申请日：2012-11-16

申请人： Tokiko Inoue ,  Mitsuru Nakajima ,  Tsuyoshi Fujimoto ,  Akihiro Iwamatsu ,  Chihiro Tanaka

发明人： Tokiko Inoue ,  Mitsuru Nakajima ,  Tsuyoshi Fujimoto ,  Akihiro Iwamatsu ,  Chihiro Tanaka

IPC分类号： H04N1/04

CPC分类号： G02B6/0011 ,  G03G15/04054 ,  H04N1/02481 ,  H04N1/02855 ,  H04N1/02865 ,  H04N2201/02435

摘要： A light irradiator including multiple point light sources arranged in a straight line, a light-transmissive light guiding member provided in front of the point light sources in an emission direction of beams of light emitted from the point light sources, the light guiding member guiding the beams of light in a predetermined direction toward a surface to be irradiated; and two or more protrusions protruding toward the point light sources, provided on a light entering surface of the light guiding member and arranged in the same direction as the point light sources. The light guiding member and the point light sources are positioned such that a distance between the protrusions provided to the light guiding member and irradiation surfaces of the point light sources is equal at two positions.

摘要翻译： 一种包括以直线排列的多点光源的光照射器，沿点光源发射的光束的发射方向设置在点光源前面的透光导光部件，导光部件引导 沿预定方向的光束朝向待照射的表面; 以及设置在导光部件的光入射面上且与点光源相同的方向配置的朝向点光源突出的两个以上的突起。 导光构件和点光源被定位成使得提供给导光构件的突起和点光源的照射表面之间的距离在两个位置处相等。

公开(公告)号：US07778298B2

公开(公告)日：2010-08-17

申请号：US11887412

申请日：2006-03-30

申请人： Tsuyoshi Fujimoto

发明人： Tsuyoshi Fujimoto

IPC分类号： H01S5/00

CPC分类号： H01S5/223 ,  H01S5/0021 ,  H01S5/2206 ,  H01S5/2237

摘要： An object of the invention is to achieve a high output gain waveguide semiconductor laser device exhibiting high reliability by suppressing growth of DLD. A semiconductor laser device includes a semiconductor laser structure of a gain waveguide formed on a semiconductor substrate in which two grooves extending in an oscillation direction thereof are formed, wherein a current injection stripe is arranged between the two grooves. Preferably, a quantum well constituting an active layer of the semiconductor laser device is composed of GaAs.

摘要翻译： 本发明的一个目的是通过抑制<100> DLD的生长来实现具有高可靠性的高输出增益波导半导体激光器件。 半导体激光器件包括形成在半导体衬底上的增益波导的半导体激光器结构，其中形成有沿其振荡方向延伸的两个沟槽，其中在两个沟槽之间布置有电流注入条纹。 优选地，构成半导体激光器件的有源层的量子阱由GaAs构成。