公开(公告)号：US08945991B2

公开(公告)日：2015-02-03

申请号：US14087445

申请日：2013-11-22

Applicant: Broadcom Corporation

Inventor： Kevin (Kunzhong) Hu ,  Chonghua Zhong ,  Edward Law

IPC: H01L21/50

CPC classification number: H01L24/13 ,  H01L21/561 ,  H01L21/76801 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05684 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2224/03 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/013 ,  H01L2224/05552 ,  H01L2924/00

Abstract: There are disclosed herein various implementations of improved wafer level semiconductor packages. One exemplary implementation comprises forming a post-fabrication redistribution layer (post-Fab RDL) between first and second dielectric layers affixed over a surface of a wafer, and forming a window for receiving an electrical contact body in the second dielectric layer, the window exposing the post-Fab RDL. At least one of the first and second dielectric layers is a pre-formed dielectric layer, which may be affixed over the surface of the wafer using a lamination process. In one implementation, the window is formed using a direct laser ablation process.

Abstract translation: 这里公开了改进的晶片级半导体封装的各种实现方式。 一个示例性实现包括在固定在晶片表面上的第一和第二电介质层之间形成后制造再分配层（后Fab RDL），并形成用于接收第二介电层中的电接触体的窗口，窗口暴露 后Fab RDL。 第一和第二电介质层中的至少一个是预先形成的电介质层，其可以使用层压工艺固定在晶片的表面上。 在一个实施方案中，窗口使用直接激光烧蚀工艺形成。

公开(公告)号：US09118367B2

公开(公告)日：2015-08-25

申请号：US13849112

申请日：2013-03-22

Applicant: Broadcom Corporation

Inventor： Ray (Ramon) Gomez ,  Leonard Dauphinee ,  Massimo Brandolini ,  Jianhong Xiao ,  Dongsoo Koh ,  Young Shin ,  Chonghua Zhong ,  Reza Rahman Khan

IPC: H04B1/04 ,  H03M1/66

CPC classification number: H04B1/0475 ,  H03M1/66

Abstract: Embodiments provide transmitter topologies that improve the power efficiency and bandwidth of RF transmitters for high transmission power applications. In an embodiment, the common-emitter/source PA of conventional topologies is replaced with a current-input common-base/gate PA, which is stacked on top on an open-collector/drain current-output transmitter. The common-base/gate PA protects the output of the transmitter from large output voltage swings. The low input impedance of the common-base/gate PA makes the PA less susceptible to frequency roll-off, even in the presence of large parasitic capacitance produced by the transmitter. At the same time, the low input impedance of the common-base/gate PA reduces the voltage swing at the transmitter output and prevents the transmitter output from being compressed or modulated. In an embodiment, the DC output current of the transmitter is reused to bias the PA, which results in power savings compared to conventional transmitter topologies.

Abstract translation: 实施例提供了发射机拓扑，其提高用于高传输功率应用的RF发射机的功率效率和带宽。 在一个实施例中，常规拓扑的共发射极/源极PA被替换为电流输入公共基极/栅极PA，其在集电极开路/漏极电流输出发射器上堆叠在顶部。 公共端/门PA保护发射机的输出免受大的输出电压摆幅。 公共基极/门极PA的低输入阻抗使得即使在发射机产生大的寄生电容的情况下，PA也不易于频率滚降。 同时，公共基极/门极PA的低输入阻抗降低了发射机输出端的电压摆幅，并防止发射机输出被压缩或调制。 在一个实施例中，与常规发射机拓扑相比，发射机的DC输出电流被重新用于偏置PA，这导致功率节省。

公开(公告)号：US08922014B2

公开(公告)日：2014-12-30

申请号：US14086851

申请日：2013-11-21

Applicant: Broadcom Corporation

Inventor： Kevin (Kunzhong) Hu ,  Chonghua Zhong ,  Edward Law

IPC: H01L23/48

CPC classification number: H01L24/13 ,  H01L21/561 ,  H01L21/76801 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05684 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2224/03 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/013 ,  H01L2224/05552 ,  H01L2924/00

Abstract: There are disclosed herein various implementations of improved wafer level semiconductor packages. One exemplary implementation comprises forming a post-fabrication redistribution layer (post-Fab RDL) between first and second dielectric layers affixed over a surface of a wafer, and forming a window for receiving an electrical contact body in the second dielectric layer, the window exposing the post-Fab RDL. At least one of the first and second dielectric layers is a pre-formed dielectric layer, which may be affixed over the surface of the wafer using a lamination process. In one implementation, the window is formed using a direct laser ablation process.

Abstract translation: 这里公开了改进的晶片级半导体封装的各种实现方式。 一个示例性实现包括在固定在晶片表面上的第一和第二电介质层之间形成后制造再分配层（后Fab RDL），并形成用于接收第二介电层中的电接触体的窗口，窗口暴露 后Fab RDL。 第一和第二电介质层中的至少一个是预先形成的电介质层，其可以使用层压工艺固定在晶片的表面上。 在一个实施方案中，窗口使用直接激光烧蚀工艺形成。

公开(公告)号：US20140084462A1

公开(公告)日：2014-03-27

申请号：US14086851

申请日：2013-11-21

Applicant: Broadcom Corporation

Inventor： Kevin (Kunzhong) Hu ,  Chonghua Zhong ,  Edward Law

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L21/561 ,  H01L21/76801 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05684 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2224/03 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/013 ,  H01L2224/05552 ,  H01L2924/00

Abstract: There are disclosed herein various implementations of improved wafer level semiconductor packages. One exemplary implementation comprises forming a post-fabrication redistribution layer (post-Fab RDL) between first and second dielectric layers affixed over a surface of a wafer, and forming a window for receiving an electrical contact body in the second dielectric layer, the window exposing the post-Fab RDL. At least one of the first and second dielectric layers is a pre-formed dielectric layer, which may be affixed over the surface of the wafer using a lamination process. In one implementation, the window is formed using a direct laser ablation process.

Abstract translation: 这里公开了改进的晶片级半导体封装的各种实现方式。 一个示例性实现包括在固定在晶片表面上的第一和第二电介质层之间形成后制造再分配层（后Fab RDL），并形成用于接收第二介电层中的电接触体的窗口，窗口暴露 后Fab RDL。 第一和第二电介质层中的至少一个是预先形成的电介质层，其可以使用层压工艺固定在晶片的表面上。 在一个实施方案中，窗口使用直接激光烧蚀工艺形成。

公开(公告)号：US20130235953A1

公开(公告)日：2013-09-12

申请号：US13849112

申请日：2013-03-22

Applicant: BROADCOM CORPORATION

Inventor： Ray (Ramon) GOMEZ ,  Leonard Dauphinee ,  Massimo Brandolini ,  Jianhong Xiao ,  Dongsoo Koh ,  Young Shin ,  Chonghua Zhong ,  Reza Rahman Khan

IPC: H04B1/04 ,  H03M1/66

CPC classification number: H04B1/0475 ,  H03M1/66

Abstract: Embodiments provide transmitter topologies that improve the power efficiency and bandwidth of RF transmitters for high transmission power applications. In an embodiment, the common-emitter/source PA of conventional topologies is replaced with a current-input common-base/gate PA, which is stacked on top on an open-collector/drain current-output transmitter. The common-base/gate PA protects the output of the transmitter from large output voltage swings. The low input impedance of the common-base/gate PA makes the PA less susceptible to frequency roll-off, even in the presence of large parasitic capacitance produced by the transmitter. At the same time, the low input impedance of the common-base/gate PA reduces the voltage swing at the transmitter output and prevents the transmitter output from being compressed or modulated, In an embodiment, the DC output current of the transmitter is reused to bias the PA, which results in power savings compared to conventional transmitter topologies.

Abstract translation: 实施例提供了发射机拓扑，其提高用于高传输功率应用的RF发射机的功率效率和带宽。 在一个实施例中，常规拓扑的共发射极/源极PA被替换为电流输入公共基极/栅极PA，其在集电极开路/漏极电流输出发射器上堆叠在顶部。 公共端/门PA保护发射机的输出免受大的输出电压摆幅。 公共基极/门极PA的低输入阻抗使得即使在发射机产生大的寄生电容的情况下，PA也不易于频率滚降。 同时，公共基极/门极PA的低输入阻抗降低了发射机输出端的电压摆幅，并防止发射机输出被压缩或调制。在一个实施例中，发射机的直流输出电流被重新使用 偏置PA，与常规发射机拓扑结构相比，导致功率节省。

公开(公告)号：US20140087553A1

公开(公告)日：2014-03-27

申请号：US14087445

申请日：2013-11-22

Applicant: BROADCOM CORPORATION

Inventor： Kevin (Kunzhong) Hu ,  Chonghua Zhong ,  Edward Law

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L21/561 ,  H01L21/76801 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05073 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05684 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2224/03 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/013 ,  H01L2224/05552 ,  H01L2924/00

Abstract: There are disclosed herein various implementations of improved wafer level semiconductor packages. One exemplary implementation comprises forming a post-fabrication redistribution layer (post-Fab RDL) between first and second dielectric layers affixed over a surface of a wafer, and forming a window for receiving an electrical contact body in the second dielectric layer, the window exposing the post-Fab RDL. At least one of the first and second dielectric layers is a pre-formed dielectric layer, which may be affixed over the surface of the wafer using a lamination process. In one implementation, the window is formed using a direct laser ablation process.

Abstract translation: 这里公开了改进的晶片级半导体封装的各种实现方式。 一个示例性实现包括在固定在晶片表面上的第一和第二电介质层之间形成后制造再分布层（后Fab RDL），并形成用于接收第二介电层中的电接触体的窗口，窗口暴露 后Fab RDL。 第一和第二电介质层中的至少一个是预先形成的电介质层，其可以使用层压工艺固定在晶片的表面上。 在一个实施方案中，窗口使用直接激光烧蚀工艺形成。